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Prof. RNDr. Václav Holý, CSc.

Místnost
1025, přízemí, Ke Karlovu 5
Telefon
+420  2 2191 1389
Fax
+420  22491 1061
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Curriculum Vitae

prof. RNDr. Václav Holý, CSc., narozen 19. září 1953 v Brně, ženatý, 2 děti

Vzdělání a vědecko-pedagogické tituly

  • 2001: titul "profesor"
  • 1996: titul "docent" na základě obhajoby habilitační práce
  • 1982: titul CSc., obor fyzika pevných látek
  • 1976: titul RNDr., obor experimentální fyzika
  • 1976: absolvoval studium fyziky pevných látek na přírodovědecké fakultě UJEP v Brně

Zaměstnání

  • 2004-: profesor na KFKL MFF UK,
  • 2001-2004: profesor na Ústavu fyziky kondenzovaných látek
  • 1988-2001: docent na katedře fyziky pevné fáze
  • 1980-1988: odborný asistent na katedře fyziky pevné fáze
  • 1976-1980: asistent na katedře fyziky pevné fáze

Zahraniční pobyty

  • 1979: Univerzita v Jeně (Německo), 2 měsíce, studijní pobyt,
  • 1988: Univerzita v Manchesteru (Velká Británie), 2 měsíce, studijní pobyt,
  • 1992: Univerzita v Linzi (Rakousko), 2 měsíce, studijní pobyt,
  • 1994-1995: Univerzita v Linzi (Rakousko), 6 měsíců, hostující profesor,
  • 1996: Univerzita v Linzi (Rakousko), 2 měsíce, přednáškový pobyt,
  • 1997: Univerzita v Linzi (Rakousko), 2 měsíce, přednáškový pobyt,
  • 1998: Univerzita v Linzi (Rakousko), 2 měsíce, přednáškový pobyt,
  • 1998: Univerzita v Mnichově (Německo), 1 měsíc, přednáškový pobyt,
  • 2000, 2001: Univerzita v Houstonu (USA), 2 měsíce, přednáškový pobyt

Členství ve společnostech a funkce

  • 1990 - : Člen Rady Krystalografické společnosti ČR a SR,
  • 1990 - : člen regionálního komitétu IUCr,
  • 1996 - 2000: člen výboru FVS JČMF,
  • 1996 - 2000: člen podoborové komise GA ČR,
  • 1995- : člen regionálního výboru Fyzikální olympiády

 

Ocenění vědeckou komunitou

  • člen programového výboru Evropských konferencí X-TOP,
  • zvané přednášky na konferencích: 1994: konference X-TOP Berlin (Německo),
  • 1995: konference CAMST Athény (Řecko),
  • 1995: konference IPD Moskva (Rusko),
  • 1996: jarní škola NATO v Erice (Itálie),
  • 1996: konference X-TOP Palermo (Itálie),
  • 1997: kongres IUCr Seattle (USA),
  • 1998: konference PXRMS Denver (USA),
  • 1999: konference NGS'9 Berlín (německo),
  • 2000: konference X-TOP'2000 Jaszowiec (Polsko)
  • 2001: konference Gordon Conference Frontiers in Physics, New London (USA)
  • 2001: Konference Beyond the average structure, Traverse City (USA)
  • 2004: The 20th General conference of Condensed matter division, Prague (ČR)
  • 2004: Pořadatel - X-TOP 2004, Prague (ČR)

 


Bibliografie:

Juergen Blaesing, Vaclav Holy, Armin Dadgar, Peter Veit, Juergen Christen, Simon Ploch, Martin Frentrup, Tim Wernicke, Michael Kneissl and Alois Krost. Growth and characterization of stacking fault reduced GaN( 1 0 1($)over-bar 3) on sapphire. JOURNAL OF PHYSICS D-APPLIED PHYSICS 46(12), 2013. BibTeX

@article{ ISI:000315413600026,
	author = "Blaesing, Juergen and Holy, Vaclav and Dadgar, Armin and Veit, Peter and Christen, Juergen and Ploch, Simon and Frentrup, Martin and Wernicke, Tim and Kneissl, Michael and Krost, Alois",
	title = "{Growth and characterization of stacking fault reduced GaN( 1 0 1(\$)over-bar 3) on sapphire}",
	journal = "{JOURNAL OF PHYSICS D-APPLIED PHYSICS}",
	year = "{2013}",
	volume = "{46}",
	number = "{12}",
	month = "{MAR 27}",
	abstract = "{We present a transmission electron microscope (TEM) and x-ray diffraction (XRD) study of metalorganic vapor phase epitaxy grown GaN(1 0 (\$) over bar1 3) layers on m-sapphire with Al(Ga) N interlayers. The interlayers are demonstrated to be beneficial in reducing the stacking fault (SF) density by more than 2.5 orders of magnitude from >2 x 106 cm(-1) to < 5 x 103 cm(-1) as determined by TEM. XRD measurements along the GaN(1 0 <(\$)over bar>1 2) to the GaN(1 0 (\$) over bar1 5) reflection reveal a diffraction component originating in the basal plane SFs. Fitting the XRD signal enables a fast and simple determination of SF type and density which can even distinguish between the GaN buffer and the upper GaN layers and which is in reasonable agreement with TEM measurements.}",
	doi = "{10.1088/0022-3727/46/12/125308}",
	article-number = "{125308}",
	issn = "{0022-3727}",
	times-cited = "{0}",
	unique-id = "{ISI:000315413600026}"
}

Lenka Matejova, Vaclav Vales, Radek Fajgar, Zdenek Matej, Vaclav Holy and Olga Solcova. Reverse micelles directed synthesis of TiO2-CeO2 mixed oxides and investigation of their crystal structure and morphology. JOURNAL OF SOLID STATE CHEMISTRY 198:485-495, Únor 2013. BibTeX

@article{ ISI:000314320800069,
	author = "Matejova, Lenka and Vales, Vaclav and Fajgar, Radek and Matej, Zdenek and Holy, Vaclav and Solcova, Olga",
	title = "{Reverse micelles directed synthesis of TiO2-CeO2 mixed oxides and investigation of their crystal structure and morphology}",
	journal = "{JOURNAL OF SOLID STATE CHEMISTRY}",
	year = "{2013}",
	volume = "{198}",
	pages = "{485-495}",
	month = "{FEB}",
	abstract = "{The synthesis of TiO2-CeO2 mixed oxides based on the sol-gel process controlled within reverse micelles of non-ionic surfactant Triton X-114 in cyclohexane is reported. The crystallization, phase composition, trends in nanoparticles growth and porous structure properties are studied as a function of Ti:Ce molar composition and annealing temperature by in-situ X-ray diffraction, Raman spectroscopy and physisorption. The brannerite-type CeTi2O6 crystallizes as a single crystalline phase at Ti:Ce molar composition of 70:30 and in the mixture with cubic CeO2 and anatase TiO2 for composition 50:50. At Ti:Ce molar ratios 90:10 and 30:70 the mixtures of TiO2 anatase, rutile and cubic CeO2 appear. In these mixtures TiO2 rutile is formed at higher temperatures than conventionally. Additionally, the amount of a present amorphous phase in individual mixtures was estimated from diffraction data. The porous structure morphology depends both on molar composition and annealing temperature. This is correlated with the presence of carbon impurities of different character. (c) 2012 Elsevier Inc. All rights reserved.}",
	doi = "{10.1016/j.jssc.2012.11.013}",
	issn = "{0022-4596}",
	times-cited = "{0}",
	unique-id = "{ISI:000314320800069}"
}

S Lazarev, M Barchuk, S Bauer, K Forghani, V Holy, F Scholz and T Baumbach. Study of threading dislocation density reduction in AlGaN epilayers by Monte Carlo simulation of high-resolution reciprocal-space maps of a two-layer system. JOURNAL OF APPLIED CRYSTALLOGRAPHY 46(1):120-127, Únor 2013. BibTeX

@article{ ISI:000313658700015,
	author = "Lazarev, S. and Barchuk, M. and Bauer, S. and Forghani, K. and Holy, V. and Scholz, F. and Baumbach, T.",
	title = "{Study of threading dislocation density reduction in AlGaN epilayers by Monte Carlo simulation of high-resolution reciprocal-space maps of a two-layer system}",
	journal = "{JOURNAL OF APPLIED CRYSTALLOGRAPHY}",
	year = "{2013}",
	volume = "{46}",
	number = "{1}",
	pages = "{120-127}",
	month = "{FEB}",
	abstract = "{High-resolution X-ray diffraction in coplanar and noncoplanar geometries has been used to investigate the influence of an SiNx nano-mask in the reduction of the threading dislocation (TD) density of high-quality AlGaN epitaxial layers grown on sapphire substrates. Our developed model, based on a Monte Carlo method, was applied to the simulation of the reciprocal-space maps of a two-layer system. Good agreement was found between the simulation and the experimental data, leading to an accurate determination of the dislocation densities as a function of the overgrowth layer thickness. The efficiency of the SiNx nano-mask was defined as the ratio of the TD densities in the AlGaN layers below and above the mask. A significant improvement in the AlGaN layer quality was achieved by increasing the overgrowth layer thickness, and a TD density reduction scaling law was established.}",
	doi = "{10.1107/S0021889812043051}",
	issn = "{0021-8898}",
	times-cited = "{0}",
	unique-id = "{ISI:000313658700015}"
}

N Hrauda, J J Zhang, H Groiss, J C Gerharz, T Etzelstorfer, J Stangl, V Holy, C Deiter, O H Seeck and G Bauer. Closely spaced SiGe barns as stressor structures for strain-enhancement in silicon. APPLIED PHYSICS LETTERS 102(3), 2013. BibTeX

@article{ ISI:000314032600053,
	author = "Hrauda, N. and Zhang, J. J. and Groiss, H. and Gerharz, J. C. and Etzelstorfer, T. and Stangl, J. and Holy, V. and Deiter, C. and Seeck, O. H. and Bauer, G.",
	title = "{Closely spaced SiGe barns as stressor structures for strain-enhancement in silicon}",
	journal = "{APPLIED PHYSICS LETTERS}",
	year = "{2013}",
	volume = "{102}",
	number = "{3}",
	month = "{JAN 21}",
	abstract = "{We present tensile and compressive strains realized within the same Si capping layer on an array of SiGe islands grown on pit-patterned (001) Si substrates. The strain distributions are obtained from synchrotron X-ray diffraction studies in combination with three-dimensional finite element calculations and simulations of the diffracted intensities. For barn-shaped islands grown at 720 degrees C with average Ge contents of 30\%, the Si cap layer is misfit-and threading-dislocation free and exhibits compressive strains as high as 0.8\% in positions between the islands and tensile strains of up to 1\% on top of the islands. (C) 2013 American Institute of Physics. {[}http://dx.doi.org/10.1063/1.4789507]}",
	doi = "{10.1063/1.4789507}",
	article-number = "{032109}",
	issn = "{0003-6951}",
	researcherid-numbers = "{Zhang, Jianjun/K-3747-2012}",
	times-cited = "{0}",
	unique-id = "{ISI:000314032600053}"
}

S Haviar, M Dubau, I Khalakhan, M Vorokhta, I Matolinova, V Matolin, V Vales, J Endres, V Holy, M Buljan and S Bernstorff. X-ray small-angle scattering from sputtered CeO2/C bilayers. JOURNAL OF APPLIED PHYSICS 113(2), 2013. BibTeX

@article{ ISI:000313644500067,
	author = "Haviar, S. and Dubau, M. and Khalakhan, I. and Vorokhta, M. and Matolinova, I. and Matolin, V. and Vales, V. and Endres, J. and Holy, V. and Buljan, M. and Bernstorff, S.",
	title = "{X-ray small-angle scattering from sputtered CeO2/C bilayers}",
	journal = "{JOURNAL OF APPLIED PHYSICS}",
	year = "{2013}",
	volume = "{113}",
	number = "{2}",
	month = "{JAN 14}",
	abstract = "{Surface and interface morphology of cerium oxide/carbon bilayers used as thin-film catalysts is studied by grazing-incidence small-angle x-ray scattering, scanning electron microscopy, and atomic-force microscopy, and the dependence of the structural parameters on the thicknesses of the constituting layers is investigated. The applicability of x-ray scattering and its advantages over standard analytical methods are discussed. (C) 2013 American Institute of Physics. {[}http://dx.doi.org/10.1063/1.4773446]}",
	doi = "{10.1063/1.4773446}",
	article-number = "{024301}",
	issn = "{0021-8979}",
	times-cited = "{0}",
	unique-id = "{ISI:000313644500067}"
}

N Hrauda, J J Zhang, M J Sueess, E Wintersberger, V Holy, J Stangl, C Deiter, O H Seeck and G Bauer. Strain distribution in Si capping layers on SiGe islands: influence of cap thickness and footprint in reciprocal space. NANOTECHNOLOGY 23(46), 2012. BibTeX

@article{ ISI:000310460300020,
	author = "Hrauda, N. and Zhang, J. J. and Sueess, M. J. and Wintersberger, E. and Holy, V. and Stangl, J. and Deiter, C. and Seeck, O. H. and Bauer, G.",
	title = "{Strain distribution in Si capping layers on SiGe islands: influence of cap thickness and footprint in reciprocal space}",
	journal = "{NANOTECHNOLOGY}",
	year = "{2012}",
	volume = "{23}",
	number = "{46}",
	month = "{NOV 23}",
	abstract = "{We present investigations on the strain properties of silicon capping layers on top of regular SiGe island arrays, in dependence on the Si-layer thickness. Such island arrays are used as stressors for the active channel in field-effect transistors where the desired tensile strain in the Si channel is a crucial parameter for the performance of the device. The thickness of the Si cap was varied from 0 to 30 nm. The results of high resolution x-ray diffraction experiments served as input to perform detailed strain calculations via finite element method models. Thus, detailed information on the Ge distribution within the buried islands and the strain interaction between the SiGe island and Si cap was obtained. It was found that the tensile strain within the Si capping layer strongly depends on its thickness, even if the Ge concentration of the buried dot remains unchanged, with tensile strains degrading if thicker Si layers are used.}",
	doi = "{10.1088/0957-4484/23/46/465705}",
	article-number = "{465705}",
	issn = "{0957-4484}",
	researcherid-numbers = "{Zhang, Jianjun/K-3747-2012}",
	times-cited = "{1}",
	unique-id = "{ISI:000310460300020}"
}

Davide Altamura, Vaclav Holy, Dritan Siliqi, Indira Chaitanya Lekshmi, Concetta Nobile, Giuseppe Maruccio, Davide P Cozzoli, Lixin Fan, Fabia Gozzo and Cinzia Giannini. Exploiting GISAXS for the Study of a 3D Ordered Super lattice of Self-Assembled Colloidal Iron Oxide Nanocrystals. CRYSTAL GROWTH & DESIGN 12(11):5505-5512, Listopad 2012. BibTeX

@article{ ISI:000311240100043,
	author = "Altamura, Davide and Holy, Vaclav and Siliqi, Dritan and Lekshmi, Indira Chaitanya and Nobile, Concetta and Maruccio, Giuseppe and Cozzoli, P. Davide and Fan, Lixin and Gozzo, Fabia and Giannini, Cinzia",
	title = "{Exploiting GISAXS for the Study of a 3D Ordered Super lattice of Self-Assembled Colloidal Iron Oxide Nanocrystals}",
	journal = "{CRYSTAL GROWTH \& DESIGN}",
	year = "{2012}",
	volume = "{12}",
	number = "{11}",
	pages = "{5505-5512}",
	month = "{NOV}",
	abstract = "{A three-dimensional (3D) ordered superlattice of colloidal iron oxide nanocrystals obtained by magnetic-field-assisted self-assembly has been studied by grazing incidence small angle X-ray scattering (GISAXS). A new model to simulate and interpret GISAXS patterns is presented, which returns the structural and morphological details of 3D nanocrystal-built supercrystals. The model is applied to a sample with a suitable surface morphology, allowing the observation of ``volume diffraction{''} even at extremely low grazing incidence angle. In this particular case, the average fcc-like stacking of the nanocrystals (building blocks), their spherical shape, and statistical information on their size distribution and positions within the superlattice have been safely deduced The proposed model is expected to be amendable for the analysis of more complex structures and applicable to a large variety of nanocrystal-based assemblies.}",
	doi = "{10.1021/cg3010739}",
	issn = "{1528-7483}",
	times-cited = "{0}",
	unique-id = "{ISI:000311240100043}"
}

E Klimesova, K Kusova, J Vacik, V Holy and I Pelant. Tuning luminescence properties of silicon nanocrystals by lithium doping. JOURNAL OF APPLIED PHYSICS 112(6), 2012. BibTeX

@article{ ISI:000309423200140,
	author = "Klimesova, E. and Kusova, K. and Vacik, J. and Holy, V. and Pelant, I.",
	title = "{Tuning luminescence properties of silicon nanocrystals by lithium doping}",
	journal = "{JOURNAL OF APPLIED PHYSICS}",
	year = "{2012}",
	volume = "{112}",
	number = "{6}",
	month = "{SEP 15}",
	abstract = "{Doping silicon nanocrystals (SiNCs) provides a new way to modify their luminescence properties and tailor them for a particular application. We prepared Li-doped SiNCs and characterized them by neutron depth profiling and x-ray diffraction. Our SiNC samples are doped with around 10-100 Li atoms per one nanocrystal and their lattice slightly expands after lithium insertion. We show that the photoluminescence (PL) properties of Li-doped SiNCs are distinctly modified compared to the undoped case. The PL maximum shifts to shorter wavelengths and the PL decay time decreases, both these features being favorable for applications in photonics. The spectral blue-shift is attributed to the tensile strain in SiNCs induced by doping with lithium. (C) 2012 American Institute of Physics. {[}http://dx.doi.org/10.1063/1.4754518]}",
	doi = "{10.1063/1.4754518}",
	article-number = "{064322}",
	issn = "{0021-8979}",
	researcherid-numbers = "{Kusova, Katerina/D-8842-2011 Klimesova, Eva/F-3048-2011}",
	times-cited = "{0}",
	unique-id = "{ISI:000309423200140}"
}

E Piskorska-Hommel, V Holy, O Caha, A Wolska, A Gust, C Kruse, H Kroencke, J Falta and D Hommel. Complementary information on CdSe/ZnSe quantum dot local structure from extended X-ray absorption fine structure and diffraction anomalous fine structure measurements. JOURNAL OF ALLOYS AND COMPOUNDS 523:155-160, 2012. BibTeX

@article{ ISI:000301387400026,
	author = "Piskorska-Hommel, E. and Holy, V. and Caha, O. and Wolska, A. and Gust, A. and Kruse, C. and Kroencke, H. and Falta, J. and Hommel, D.",
	title = "{Complementary information on CdSe/ZnSe quantum dot local structure from extended X-ray absorption fine structure and diffraction anomalous fine structure measurements}",
	journal = "{JOURNAL OF ALLOYS AND COMPOUNDS}",
	year = "{2012}",
	volume = "{523}",
	pages = "{155-160}",
	month = "{MAY 15}",
	abstract = "{The extended X-ray absorption fine structure (EXAFS) and diffraction anomalous fine structure (DAFS) have been applied to investigate a local structure for the CdSe/ZnSe quantum dots grown by molecular beam epitaxy (MBE) and migration-enhanced epitaxy (MEE). The aim was to study the intermixing of Cd and Zn atoms, chemical compositions and strain induced by cap-layer. The EXAFS at the Cd K-edge and DAFS at the Se K-edge proved the intermixing of Cd and Zn atoms. The distances Cd-Se (2.61 angstrom) found from EXAFS and DAFS analysis for h(1) region is closer to that in bulk CdSe (2.62 angstrom). The DAFS analysis revealed the differences in the local structure in two investigated regions (i.e. different iso-strain volumes) on the quantum dots. It was found that the investigated areas differ in the Cd concentration. To explain the experimental results the theoretical calculation based on a full valence-force field (VFF) model was performed. The theoretical VFF model fully explains the experimental data. (C) 2012 Elsevier B. V. All rights reserved.}",
	doi = "{10.1016/j.jallcom.2012.01.133}",
	issn = "{0925-8388}",
	researcherid-numbers = "{Caha, Ondrej/E-4716-2012 Gust, Arne/G-1133-2012}",
	times-cited = "{2}",
	unique-id = "{ISI:000301387400026}"
}

Vaclav Vales, Vaclav Holy, Maja Buljan, Vesna Janicki and Sigrid Bernstorff. Structural and morphological properties of Fe2O3/TiO2 nanocrystals in silica matrix. THIN SOLID FILMS 520(14, SI):4800-4802, 2012. BibTeX

@article{ ISI:000304567900066,
	author = "Vales, Vaclav and Holy, Vaclav and Buljan, Maja and Janicki, Vesna and Bernstorff, Sigrid",
	title = "{Structural and morphological properties of Fe2O3/TiO2 nanocrystals in silica matrix}",
	journal = "{THIN SOLID FILMS}",
	year = "{2012}",
	volume = "{520}",
	number = "{14, SI}",
	pages = "{4800-4802}",
	month = "{MAY 1}",
	abstract = "{We report on structural, morphological and ordering properties of Fe2O3/TiO2 nanoparticles embedded in SiO2-based multilayers. We investigated the structure of these systems by X-ray diffraction and grazing incidence small angle X-ray scattering after post-growth annealing. We found that the presence of TiO2 promotes the growth and crystallization of the nanocrystals of Fe2O3. In multilayers containing both Fe2O3 and TiO2, crystalline nanoparticles create partially ordered three-dimensional arrays. (C) 2011 Elsevier B.V. All rights reserved.}",
	doi = "{10.1016/j.tsf.2011.10.117}",
	issn = "{0040-6090}",
	times-cited = "{0}",
	unique-id = "{ISI:000304567900066}"
}

A P Wijnheijmer, X Marti, V Holy, M Cukr, V Novak, T Jungwirth and P M Koenraad. Scanning tunneling microscopy reveals LiMnAs is a room temperature anti-ferromagnetic semiconductor. APPLIED PHYSICS LETTERS 100(11), 2012. BibTeX

@article{ ISI:000302204900038,
	author = "Wijnheijmer, A. P. and Marti, X. and Holy, V. and Cukr, M. and Novak, V. and Jungwirth, T. and Koenraad, P. M.",
	title = "{Scanning tunneling microscopy reveals LiMnAs is a room temperature anti-ferromagnetic semiconductor}",
	journal = "{APPLIED PHYSICS LETTERS}",
	year = "{2012}",
	volume = "{100}",
	number = "{11}",
	month = "{MAR 12}",
	abstract = "{We performed scanning tunneling microscopy and spectroscopy on a LiMnAs(001) thin film epitaxially grown on an InAs(001) substrate by molecular beam epitaxy. While the in situ cleavage exposed only the InAs(110) non-polar planes, the cleavage continued into the LiMnAs thin layer across several facets. We combined both topography and current mappings to confirm that the facets correspond to LiMnAs. By spectroscopy we show that LiMnAs has a band gap. The band gap evidenced in this study, combined with the known Neel temperature well above room temperature, confirms that LiMnAs is a promising candidate for exploring the concepts of high temperature semiconductor spintronics based on antiferromagnets. (C) 2012 American Institute of Physics. {[}http://dx.doi.org/10.1063/1.3693611]}",
	doi = "{10.1063/1.3693611}",
	article-number = "{112107}",
	issn = "{0003-6951}",
	times-cited = "{0}",
	unique-id = "{ISI:000302204900038}"
}

K Kolacek, J Straus, J Schmidt, O Frolov, V Prukner, A Shukurov, V Holy, J Sobota and T Fort. Nano-structuring of solid surface by extreme ultraviolet Ar8+ laser. LASER AND PARTICLE BEAMS 30(1):57-63, Březen 2012. BibTeX

@article{ ISI:000302371200008,
	author = "Kolacek, K. and Straus, J. and Schmidt, J. and Frolov, O. and Prukner, V. and Shukurov, A. and Holy, V. and Sobota, J. and Fort, T.",
	title = "{Nano-structuring of solid surface by extreme ultraviolet Ar8+ laser}",
	journal = "{LASER AND PARTICLE BEAMS}",
	year = "{2012}",
	volume = "{30}",
	number = "{1}",
	pages = "{57-63}",
	month = "{MAR}",
	abstract = "{This work demonstrates the patterning of polymethylmethacrylate (PMMA) by ablation with Ar8+ ion laser (lambda = 46.9 nm) pumped by pulse, high-current, capillary-discharge. For focusing a long-focal spherical mirror (R = 2100 mm) covered by 14 double-layer Sc-Si coating was used. The ablated focal spots demonstrate not only that the energy of our laser is sufficient for such experiments, but also that the design of focusing optics must be more sophisticated: severe aberrations were revealed - an irregular spot shape and strong astigmatism with astigmatic difference as large as 16 mm. In some cases, on the bottom of ablated spots a laser-induced periodic surface structure appeared. Finally, an illumination of the sample through quadratic hole 7.5 x 7.5 mu m, standing in contact with PMMA substrate ablated from the surface a strongly developed two-dimensional diffraction pattern (period in the center about 125 nm).}",
	doi = "{10.1017/S0263034611000681}",
	issn = "{0263-0346}",
	researcherid-numbers = "{Sobota, Jaroslav/D-5192-2012 Fort, Tomas/E-5204-2012}",
	times-cited = "{0}",
	unique-id = "{ISI:000302371200008}"
}

M Buljan, U V Desnica, I Bogdanovic-Radovic, N Radic, M Ivanda, G Drazic, S Bernstorff and V Holy. Preparation of regularly ordered Ge quantum dot lattices in amorphous matrices. VACUUM 86(6, SI):733-736, 2012. BibTeX

@article{ ISI:000301018400037,
	author = "Buljan, M. and Desnica, U. V. and Bogdanovic-Radovic, I. and Radic, N. and Ivanda, M. and Drazic, G. and Bernstorff, S. and Holy, V.",
	title = "{Preparation of regularly ordered Ge quantum dot lattices in amorphous matrices}",
	journal = "{VACUUM}",
	year = "{2012}",
	volume = "{86}",
	number = "{6, SI}",
	pages = "{733-736}",
	month = "{JAN 27}",
	abstract = "{We compare structural and optical properties of Ge quantum dot lattices in amorphous silica matrix obtained by two recently published techniques for the preparation of regularly ordered quantum dot lattices in amorphous matrices. The first technique is self-ordering growth of (Ge + SiO2)/SiO2 multilayer at an elevated substrate temperature where diffusion and surface morphology effects drive the self-ordering. The second one is irradiation of (Ge + SiO2)/SiO2 multilayer by oxygen ions. The multilayer used for the irradiation is grown at room temperature in this case, resulting with no Ge clusters after the deposition process. The irradiation causes clustering of Ge and ordering of Ge quantum dots in the irradiation direction. We show that the size of the dots and their arrangement can be easily manipulated by the preparation parameters. The structural properties of the films prepared by these methods affect the quantum confinement of the charge carriers which is visible in the absorption properties of the films. (C) 2011 Elsevier Ltd. All rights reserved.}",
	doi = "{10.1016/j.vacuum.2011.07.032}",
	issn = "{0042-207X}",
	researcherid-numbers = "{Ivanda, Mile/J-3772-2012}",
	times-cited = "{0}",
	unique-id = "{ISI:000301018400037}"
}

Maja Buljan, Nikola Radic, Sigrid Bernstorff, Goran Drazic, Iva Bogdanovic-Radovic and Vaclav Holy. Grazing-incidence small-angle X-ray scattering: application to the study of quantum dot lattices. ACTA CRYSTALLOGRAPHICA SECTION A 68(Part 1):124-138, Leden 2012. BibTeX

@article{ ISI:000298478100011,
	author = "Buljan, Maja and Radic, Nikola and Bernstorff, Sigrid and Drazic, Goran and Bogdanovic-Radovic, Iva and Holy, Vaclav",
	title = "{Grazing-incidence small-angle X-ray scattering: application to the study of quantum dot lattices}",
	journal = "{ACTA CRYSTALLOGRAPHICA SECTION A}",
	year = "{2012}",
	volume = "{68}",
	number = "{Part 1}",
	pages = "{124-138}",
	month = "{JAN}",
	abstract = "{The ordering of quantum dots in three-dimensional quantum dot lattices is investigated by grazing-incidence small-angle X-ray scattering (GISAXS). Theoretical models describing GISAXS intensity distributions for three general classes of lattices of quantum dots are proposed. The classes differ in the type of disorder of the positions of the quantum dots. The models enable full structure determination, including lattice type, lattice parameters, the type and degree of disorder in the quantum dot positions and the distributions of the quantum dot sizes. Applications of the developed models are demonstrated using experimentally measured data from several types of quantum dot lattices formed by a self-assembly process.}",
	doi = "{10.1107/S0108767311040104}",
	issn = "{0108-7673}",
	times-cited = "{6}",
	unique-id = "{ISI:000298478100011}"
}

D Pesquera, X Marti, V Holy, R Bachelet, G Herranz and J Fontcuberta. X-ray interference effects on the determination of structural data in ultrathin La2/3Sr1/3MnO3 epitaxial thin films. APPLIED PHYSICS LETTERS 99(22), 2011. BibTeX

@article{ ISI:000298244500016,
	author = "Pesquera, D. and Marti, X. and Holy, V. and Bachelet, R. and Herranz, G. and Fontcuberta, J.",
	title = "{X-ray interference effects on the determination of structural data in ultrathin La2/3Sr1/3MnO3 epitaxial thin films}",
	journal = "{APPLIED PHYSICS LETTERS}",
	year = "{2011}",
	volume = "{99}",
	number = "{22}",
	month = "{NOV 28}",
	abstract = "{We analyze x-ray diffraction data to extract cell parameters of ultrathin films on closely matching substrates. We focus on epitaxial La2/3Sr1/3MnO3 films grown on (001) SrTiO3 single crystalline substrates. It will be shown that, due to extremely high structural similarity of film and substrate, the data analysis must explicitly consider the distinct phase of the diffracted waves by substrate and films to extract reliable unit cell parameters. The implications of this finding for the understanding of strain effects in ultrathin films and interfaces will be underlined. (C) 2011 American Institute of Physics. {[}doi: 10.1063/1.3663574]}",
	doi = "{10.1063/1.3663574}",
	article-number = "{221901}",
	issn = "{0003-6951}",
	times-cited = "{2}",
	unique-id = "{ISI:000298244500016}"
}

M Buljan, I Bogdanovic-Radovic, M Karlusic, U V Desnica, N Radic, M Jaksic, K Salamon, G Drazic, S Bernstorff and V Holy. Design of quantum dot lattices in amorphous matrices by ion beam irradiation. PHYSICAL REVIEW B 84(15), 2011. BibTeX

@article{ ISI:000296288000015,
	author = "Buljan, M. and Bogdanovic-Radovic, I. and Karlusic, M. and Desnica, U. V. and Radic, N. and Jaksic, M. and Salamon, K. and Drazic, G. and Bernstorff, S. and Holy, V.",
	title = "{Design of quantum dot lattices in amorphous matrices by ion beam irradiation}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{2011}",
	volume = "{84}",
	number = "{15}",
	month = "{OCT 17}",
	abstract = "{We report on the highly controllable self-assembly of semiconductor quantum dots and metallic nanoparticles in a solid amorphous matrix, induced by ion beam irradiation of an amorphous multilayer. We demonstrate experimentally and theoretically a possibility to tune the basic structural properties of the quantum dots in a wide range. Furthermore, the sizes, distances, and arrangement type of the quantum dots follow simple equations dependent on the irradiation and the multilayer properties. We present a Monte Carlo model for the simulation and prediction of the structural properties of the materials formed by this method. The presented results enable engineering and simple production of functional materials or simple devices interesting for applications in nanotechnology.}",
	doi = "{10.1103/PhysRevB.84.155312}",
	article-number = "{155312}",
	issn = "{1098-0121}",
	times-cited = "{2}",
	unique-id = "{ISI:000296288000015}"
}

M Barchuk, V Holy, D Kriegner, J Stangl, S Schwaiger and F Scholz. Diffuse x-ray scattering from stacking faults in a-plane GaN epitaxial layers. PHYSICAL REVIEW B 84(9), 2011. BibTeX

@article{ ISI:000295161900001,
	author = "Barchuk, M. and Holy, V. and Kriegner, D. and Stangl, J. and Schwaiger, S. and Scholz, F.",
	title = "{Diffuse x-ray scattering from stacking faults in a-plane GaN epitaxial layers}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{2011}",
	volume = "{84}",
	number = "{9}",
	month = "{SEP 23}",
	abstract = "{Diffuse x-ray scattering from various types of stacking faults in basal (0001) planes in a-oriented wurtzite GaN epitaxial layers is described theoretically and the calculated intensity distributions are compared with experimental data. From the comparison, the densities of stacking faults in a series of a-GaN samples were determined. The method makes it possible to discriminate the diffuse scattering from stacking faults from the influence of nonplanar defects like dislocations.}",
	doi = "{10.1103/PhysRevB.84.094113}",
	article-number = "{094113}",
	issn = "{1098-0121}",
	researcherid-numbers = "{Kriegner, Dominik/C-6225-2013}",
	times-cited = "{1}",
	unique-id = "{ISI:000295161900001}"
}

A A Minkevich, E Fohtung, T Slobodskyy, M Riotte, D Grigoriev, M Schmidbauer, A C Irvine, V Novak, V Holy and T Baumbach. Selective coherent x-ray diffractive imaging of displacement fields in (Ga,Mn)As/GaAs periodic wires. PHYSICAL REVIEW B 84(5), 2011. BibTeX

@article{ ISI:000293829200006,
	author = "Minkevich, A. A. and Fohtung, E. and Slobodskyy, T. and Riotte, M. and Grigoriev, D. and Schmidbauer, M. and Irvine, A. C. and Novak, V. and Holy, V. and Baumbach, T.",
	title = "{Selective coherent x-ray diffractive imaging of displacement fields in (Ga,Mn)As/GaAs periodic wires}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{2011}",
	volume = "{84}",
	number = "{5}",
	month = "{AUG 12}",
	abstract = "{Coherent x-ray diffractive imaging is extended to high resolution strain analysis in crystalline nanostructured devices. The method now enables reconstruction of elastic strain distribution in layered nanowires or dots. The application potential is demonstrated by determining the strain distribution in (Ga,Mn)As/GaAs nanowires. By separating diffraction signals in reciprocal spaces, individual parts of the device could be reconstructed independently by our inversion procedure. We demonstrate the method to be effective for material specific reconstruction of strain distribution in highly integrated devices.}",
	doi = "{10.1103/PhysRevB.84.054113}",
	article-number = "{054113}",
	issn = "{1098-0121}",
	times-cited = "{4}",
	unique-id = "{ISI:000293829200006}"
}

M -I Richard, A Malachias, J -L Rouviere, T -S Yoon, E Holmstrom, Y -H Xie, V Favre-Nicolin, V Holy, K Nordlund, G Renaud and T -H Metzger. Tracking defect type and strain relaxation in patterned Ge/Si(001) islands by x-ray forbidden reflection analysis. PHYSICAL REVIEW B 84(7), 2011. BibTeX

@article{ ISI:000293702800011,
	author = "Richard, M. -I. and Malachias, A. and Rouviere, J. -L. and Yoon, T. -S. and Holmstrom, E. and Xie, Y. -H. and Favre-Nicolin, V. and Holy, V. and Nordlund, K. and Renaud, G. and Metzger, T. -H.",
	title = "{Tracking defect type and strain relaxation in patterned Ge/Si(001) islands by x-ray forbidden reflection analysis}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{2011}",
	volume = "{84}",
	number = "{7}",
	month = "{AUG 9}",
	abstract = "{Plastic relaxation and formation of defects are crucial issues in the epitaxial growth of nanoparticles and thin films. Indeed, defects generate local stress in the crystalline lattice, which affects their surroundings and may lead to undesired effects such as reduced charge-carrier lifetime or nonradiative recombinations. Here, we use a nondestructive method based on x-ray diffuse scattering close to forbidden reflections to identify the defect types with a high sensitivity and quantify their average size and strain field. Combined with transmission electron microscopy, it offers opportunities to track both ensemble average and single defects inside three-dimensional structures. These techniques have been applied to partially embedded and high-Ge-content (x(Ge) = 0.87 +/- 0.06) dots selectively grown in 20-nm-sized pits on Si(001) surfaces through openings in a SiO(2) template. The stress in the 20-nm-wide Ge islands is relaxed not only by interfacial dislocations but also by microtwins and/or stacking faults located at the interface, proving the importance of \{111\} planes and twinning in the relaxation process of nanometer-size Ge dots.}",
	doi = "{10.1103/PhysRevB.84.075314}",
	article-number = "{075314}",
	issn = "{1098-0121}",
	researcherid-numbers = "{Holmstrom, Eero/B-3127-2012 Richard, Marie-Ingrid/F-6693-2012}",
	times-cited = "{4}",
	unique-id = "{ISI:000293702800011}"
}

Na Lei, Sanghwan Park, Philippe Lecoeur, Dafine Ravelosona, Claude Chappert, Olha Stelmakhovych and Vaclav Holy. Magnetization reversal assisted by the inverse piezoelectric effect in Co-Fe-B/ferroelectric multilayers. PHYSICAL REVIEW B 84(1), 2011. BibTeX

@article{ ISI:000292599100002,
	author = "Lei, Na and Park, Sanghwan and Lecoeur, Philippe and Ravelosona, Dafine and Chappert, Claude and Stelmakhovych, Olha and Holy, Vaclav",
	title = "{Magnetization reversal assisted by the inverse piezoelectric effect in Co-Fe-B/ferroelectric multilayers}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{2011}",
	volume = "{84}",
	number = "{1}",
	month = "{JUL 11}",
	abstract = "{We investigate magnetization reversal assisted by electric fields in a Co(40)Fe(40)B(20)/Co/Pd multilayer with soft perpendicular anisotropy deposited onto an epitaxial piezoelectric layer. Both the nucleation and depinning magnetic fields show a strong reduction of up to 30\% under the application of an electric field. These results show good prospects for assisting the switching processes in ultra-low-power spintronic devices.}",
	doi = "{10.1103/PhysRevB.84.012404}",
	article-number = "{012404}",
	issn = "{1098-0121}",
	times-cited = "{6}",
	unique-id = "{ISI:000292599100002}"
}

Nina Hrauda, Jianjun Zhang, Eugen Wintersberger, Tanja Etzelstorfer, Bernhard Mandl, Julian Stangl, Dina Carbone, Vaclav Holy, Vladimir Jovanovic, Cleber Biasotto, Lis K Nanver, Juergen Moers, Detlev Gruetzmacher and Guenther Bauer. X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor. NANO LETTERS 11(7):2875-2880, Červenec 2011. BibTeX

@article{ ISI:000292849400054,
	author = "Hrauda, Nina and Zhang, Jianjun and Wintersberger, Eugen and Etzelstorfer, Tanja and Mandl, Bernhard and Stangl, Julian and Carbone, Dina and Holy, Vaclav and Jovanovic, Vladimir and Biasotto, Cleber and Nanver, Lis K. and Moers, Juergen and Gruetzmacher, Detlev and Bauer, Guenther",
	title = "{X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor}",
	journal = "{NANO LETTERS}",
	year = "{2011}",
	volume = "{11}",
	number = "{7}",
	pages = "{2875-2880}",
	month = "{JUL}",
	abstract = "{For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-ray beam with a diameter of 400 nm. We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si-metal-oxide semiconductor field-effect transistor.}",
	doi = "{10.1021/nl2013289}",
	issn = "{1530-6984}",
	researcherid-numbers = "{Mandl, Bernhard/B-4628-2010 Zhang, Jianjun/K-3747-2012}",
	times-cited = "{8}",
	unique-id = "{ISI:000292849400054}"
}

L Horak, J Matejova, X Marti, V Holy, V Novak, Z Soban, S Mangold and F Jimenez-Villacorta. Diffusion of Mn interstitials in (Ga,Mn)As epitaxial layers. PHYSICAL REVIEW B 83(24), 2011. BibTeX

@article{ ISI:000292183300005,
	author = "Horak, L. and Matejova, J. and Marti, X. and Holy, V. and Novak, V. and Soban, Z. and Mangold, S. and Jimenez-Villacorta, F.",
	title = "{Diffusion of Mn interstitials in (Ga,Mn)As epitaxial layers}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{2011}",
	volume = "{83}",
	number = "{24}",
	month = "{JUN 28}",
	abstract = "{The magnetic properties of thin (Ga,Mn) As layers improve during annealing by out-diffusion of interstitialMn ions to a free surface. Out-diffused Mn atoms participate in the growth of aMn-rich surface layer and a saturation of this layer causes an inhibition of the out-diffusion. We combine high-resolution x-ray diffraction with x-ray absorption spectroscopy and a numerical solution of the diffusion problem for the study of the out-diffusion of Mn interstitials during a sequence of annealing steps. Our data demonstrate that the out-diffusion of the interstitials is substantially affected by the internal electric field caused by an inhomogeneous distribution of charges in the (Ga,Mn) As layer.}",
	doi = "{10.1103/PhysRevB.83.245209}",
	article-number = "{245209}",
	issn = "{1098-0121}",
	researcherid-numbers = "{Jimenez-Villacorta, Felix/C-3924-2009}",
	times-cited = "{1}",
	unique-id = "{ISI:000292183300005}"
}

Xavi Marti, Pilar Ferrer, Julia Herrero-Albillos, Jackeline Narvaez, Vaclav Holy, Nick Barrett, Marin Alexe and Gustau Catalan. Skin Layer of BiFeO3 Single Crystals. PHYSICAL REVIEW LETTERS 106(23), 2011. BibTeX

@article{ ISI:000291313300010,
	author = "Marti, Xavi and Ferrer, Pilar and Herrero-Albillos, Julia and Narvaez, Jackeline and Holy, Vaclav and Barrett, Nick and Alexe, Marin and Catalan, Gustau",
	title = "{Skin Layer of BiFeO3 Single Crystals}",
	journal = "{PHYSICAL REVIEW LETTERS}",
	year = "{2011}",
	volume = "{106}",
	number = "{23}",
	month = "{JUN 6}",
	abstract = "{A surface layer ({''}skin{''}) different from the bulk was found in single crystals of BiFeO3. Impedance analysis and grazing incidence x-ray diffraction reveal a phase transition at T{*} similar to 275 +/- 5 degrees C that is confined within the surface of BiFeO3. X-ray photoelectron spectroscopy and refraction-corrected x-ray diffraction as a function of incidence angle and photon wavelength indicate a reduced electron density and an elongated out-of-plane lattice parameter within a few nanometers of the surface. The skin will affect samples with large surface to volume ratios, as well as devices that rely on interfacial coupling such as exchange bias.}",
	doi = "{10.1103/PhysRevLett.106.236101}",
	article-number = "{236101}",
	issn = "{0031-9007}",
	researcherid-numbers = "{Herrero-Albillos, Julia/B-9837-2009 Herrero-Albillos, Julia/I-5462-2012}",
	times-cited = "{13}",
	unique-id = "{ISI:000291313300010}"
}

A A Minkevich, E Fohtung, T Slobodskyy, M Riotte, D Grigoriev, T Metzger, A C Irvine, V Novak, V Holy and T Baumbach. Strain field in (Ga,Mn)As/GaAs periodic wires revealed by coherent X-ray diffraction. EPL 94(6), Červen 2011. BibTeX

@article{ ISI:000291554400019,
	author = "Minkevich, A. A. and Fohtung, E. and Slobodskyy, T. and Riotte, M. and Grigoriev, D. and Metzger, T. and Irvine, A. C. and Novak, V. and Holy, V. and Baumbach, T.",
	title = "{Strain field in (Ga,Mn)As/GaAs periodic wires revealed by coherent X-ray diffraction}",
	journal = "{EPL}",
	year = "{2011}",
	volume = "{94}",
	number = "{6}",
	month = "{JUN}",
	abstract = "{An experimental and simulation study of the full strain tensor and of strain-induced magnetocrystalline anisotropies in arrays of lithographically patterned (Ga,Mn)As on GaAs(001) is performed using a coherent diffraction lensless microscopy technique. We demonstrate the ability of our technique to get an insight into the strain field propagating in the crystal part belonging to the substrate. The experimentally reconstructed strain fields are in good agreement with those obtained from simulations based on elasticity theory. Copyright (C) EPLA, 2011}",
	doi = "{10.1209/0295-5075/94/66001}",
	article-number = "{66001}",
	issn = "{0295-5075}",
	times-cited = "{5}",
	unique-id = "{ISI:000291554400019}"
}

Vaclav Holy, Maja Buljan and Rainer T Lechner. X-ray characterization of semiconductor nanostructures. SEMICONDUCTOR SCIENCE AND TECHNOLOGY 26(6, SI), Červen 2011. BibTeX

@article{ ISI:000289279300003,
	author = "Holy, Vaclav and Buljan, Maja and Lechner, Rainer T.",
	title = "{X-ray characterization of semiconductor nanostructures}",
	journal = "{SEMICONDUCTOR SCIENCE AND TECHNOLOGY}",
	year = "{2011}",
	volume = "{26}",
	number = "{6, SI}",
	month = "{JUN}",
	abstract = "{Theoretical description of x-ray scattering from nanostructures is briefly summarized. The application of x-ray scattering for the investigation of the structure of nanocrystals is demonstrated by two characteristic examples comprising standard small-angle x-ray scattering from nanocrystals in an amorphous matrix and x-ray diffraction from crystalline inclusions in an epitaxial layer. New synchrotron-based x-ray scattering methods are briefly discussed.}",
	doi = "{10.1088/0268-1242/26/6/064002}",
	article-number = "{064002}",
	issn = "{0268-1242}",
	times-cited = "{0}",
	unique-id = "{ISI:000289279300003}"
}

V Novak, M Cukr, Z Soban, T Jungwirth, X Marti, V Holy, P Horodyska and P Nemec. Molecular beam epitaxy of LiMnAs. JOURNAL OF CRYSTAL GROWTH 323(1, SI):348-350, 2011. 16th International Conference on Molecular Beam Epitaxy (ICMBE), Berlin, GERMANY, AUG 22-27, 2010. BibTeX

@article{ ISI:000292175000088,
	author = "Novak, V. and Cukr, M. and Soban, Z. and Jungwirth, T. and Marti, X. and Holy, V. and Horodyska, P. and Nemec, P.",
	title = "{Molecular beam epitaxy of LiMnAs}",
	journal = "{JOURNAL OF CRYSTAL GROWTH}",
	year = "{2011}",
	volume = "{323}",
	number = "{1, SI}",
	pages = "{348-350}",
	month = "{MAY 15}",
	note = "{16th International Conference on Molecular Beam Epitaxy (ICMBE), Berlin, GERMANY, AUG 22-27, 2010}",
	abstract = "{We report on the molecular beam epitaxy (MBE) growth of LiMnAs. Our epilayers are of high crystalline quality. The introduction of fluxes of a group-I alkali metal element Li comparable to fluxes of Mn and As has not caused any apparent damage to the MBE system after as many as 15 growth cycles performed on the system to date. (C) 2010 Elsevier B.V. All rights reserved.}",
	doi = "{10.1016/j.jcrysgro.2010.11.077}",
	issn = "{0022-0248}",
	times-cited = "{0}",
	unique-id = "{ISI:000292175000088}"
}

D Ristic, V Holy, M Ivanda, M Marcius, M Buljan, O Gamulin, K Furic, M Ristic, S Music, M Mazzola, A Chiasera, M Ferrari and G C Righini. Surface characterization of thin silicon-rich oxide films. JOURNAL OF MOLECULAR STRUCTURE 993(1-3, SI):214-218, 2011. 30th European Congress on Molecular Spectroscopy, Biomed & Technol Pole Univ Florence, Florence, ITALY, AUG 29-SEP 03, 2010. BibTeX

@article{ ISI:000291066000034,
	author = "Ristic, D. and Holy, V. and Ivanda, M. and Marcius, M. and Buljan, M. and Gamulin, O. and Furic, K. and Ristic, M. and Music, S. and Mazzola, M. and Chiasera, A. and Ferrari, M. and Righini, G. C.",
	title = "{Surface characterization of thin silicon-rich oxide films}",
	journal = "{JOURNAL OF MOLECULAR STRUCTURE}",
	year = "{2011}",
	volume = "{993}",
	number = "{1-3, SI}",
	pages = "{214-218}",
	month = "{MAY 3}",
	note = "{30th European Congress on Molecular Spectroscopy, Biomed \& Technol Pole Univ Florence, Florence, ITALY, AUG 29-SEP 03, 2010}",
	organization = "{Univ Florence \& European Lab Nonlinear Spect (LENS)}",
	abstract = "{The silicon-rich oxide (SiO(x)) films were deposited using the LPCVD (Low Pressure Chemical Vapour Deposition) method at the temperature of 570 degrees C and with silane and oxygen as the reactant gasses. The films were deposited on silicon (1 1 1) substrates. The flows of oxygen and silan in the horizontal tube reactor were varied in order to deposit films with different values of oxygen content x. The roughness of the film surfaces and of the substrate-film interfaces were determined by X-ray specular reflection. A homogeneous surface with the root-mean square (r.m.s.) surface roughness less than 3 nm has been found. Scanning electron microscopy shows surface lateral structures smaller than 50 nm. Infrared absorption shows the broad peak of the TO(3) phonon mode at 1000 cm(-1) which blue shifts with the increase of oxygen content x. The observed absence of the LO(3) phonon mode at 1260 cm(-1) is an another indication of the low surface roughness. The Raman spectra show broad bands of the TA, LA, LO, and TO-like phonon bands typical of amorphous materials. (C) 2010 Elsevier B.V. All rights reserved.}",
	doi = "{10.1016/j.molstruc.2010.11.066}",
	issn = "{0022-2860}",
	researcherid-numbers = "{Marcius, Marijan/B-9479-2012 Ferrari, Maurizio/H-3362-2011 Ivanda, Mile/J-3772-2012 Chiasera, Alessandro/A-9164-2013}",
	times-cited = "{2}",
	unique-id = "{ISI:000291066000034}"
}

B G Park, J Wunderlich, X Marti, V Holy, Y Kurosaki, M Yamada, H Yamamoto, A Nishide, J Hayakawa, H Takahashi, A B Shick and T Jungwirth. A spin-valve-like magnetoresistance of an antiferromagnet-based tunnel junction. NATURE MATERIALS 10(5):347-351, Květen 2011. BibTeX

@article{ ISI:000289720000012,
	author = "Park, B. G. and Wunderlich, J. and Marti, X. and Holy, V. and Kurosaki, Y. and Yamada, M. and Yamamoto, H. and Nishide, A. and Hayakawa, J. and Takahashi, H. and Shick, A. B. and Jungwirth, T.",
	title = "{A spin-valve-like magnetoresistance of an antiferromagnet-based tunnel junction}",
	journal = "{NATURE MATERIALS}",
	year = "{2011}",
	volume = "{10}",
	number = "{5}",
	pages = "{347-351}",
	month = "{MAY}",
	abstract = "{A spin valve is a microelectronic device in which high-and low-resistance states are realized by using both the charge and spin of carriers. Spin-valve structures used in modern hard-drive read heads and magnetic random access memories comprise two ferromagnetic electrodes whose relative magnetization orientations can be switched between parallel and antiparallel configurations, yielding the desired giant or tunnelling magnetoresistance effect(1). Here we demonstrate more than 100\% spin-valve-like signal in a NiFe/IrMn/MgO/Pt stack with an antiferromagnet on one side and a nonmagnetic metal on the other side of the tunnel barrier. Ferromagnetic moments in NiFe are reversed by external fields of approximately 50 mT or less, and the exchange-spring effect(2) of NiFe on IrMn induces rotation of antiferromagnetic moments in IrMn, which is detected by the measured tunnelling anisotropic magnetoresistance(3). Our work demonstrates a spintronic element whose transport characteristics are governed by an antiferromagnet. It demonstrates that sensitivity to low magnetic fields can be combined with large, spin-orbit-coupling-induced magnetotransport anisotropy using a single magnetic electrode. The antiferromagnetic tunnelling anisotropic magnetoresistance provides a means to study magnetic characteristics of antiferromagnetic films by an electronic-transport measurement.}",
	doi = "{10.1038/NMAT2983}",
	issn = "{1476-1122}",
	researcherid-numbers = "{Park, Byong Guk/B-3385-2012 Shick, Alexander/C-1420-2013}",
	times-cited = "{30}",
	unique-id = "{ISI:000289720000012}"
}

S Piano, X Marti, A W Rushforth, K W Edmonds, R P Campion, M Wang, O Caha, T U Schuelli, V Holy and B L Gallagher. Surface morphology and magnetic anisotropy in (Ga,Mn)As. APPLIED PHYSICS LETTERS 98(15), 2011. BibTeX

@article{ ISI:000289580800039,
	author = "Piano, S. and Marti, X. and Rushforth, A. W. and Edmonds, K. W. and Campion, R. P. and Wang, M. and Caha, O. and Schuelli, T. U. and Holy, V. and Gallagher, B. L.",
	title = "{Surface morphology and magnetic anisotropy in (Ga,Mn)As}",
	journal = "{APPLIED PHYSICS LETTERS}",
	year = "{2011}",
	volume = "{98}",
	number = "{15}",
	month = "{APR 11}",
	abstract = "{Atomic force microscopy and grazing incidence x-ray diffraction measurements have revealed the presence of ripples, aligned along the {[}1 (1) over bar0] direction on the surface of (Ga,Mn)As layers grown on GaAs(001) substrates and buffer layers, with periodicity of about 50 nm in all samples that have been studied. These samples show the strong symmetry breaking uniaxial magnetic anisotropy normally observed in such materials. We observe a clear correlation between the amplitude of the surface ripples and the strength of the uniaxial magnetic anisotropy component suggesting that these ripples might be the source of such anisotropy. (C) 2011 American Institute of Physics. {[}doi:10.1063/1.3579534]}",
	doi = "{10.1063/1.3579534}",
	article-number = "{152503}",
	issn = "{0003-6951}",
	researcherid-numbers = "{Piano, Samanta/B-4617-2010 Caha, Ondrej/E-4716-2012}",
	times-cited = "{4}",
	unique-id = "{ISI:000289580800039}"
}

C S King, J Zemen, K Olejnik, L Horak, J A Haigh, V Novak, A Irvine, J Kucera, V Holy, R P Campion, B L Gallagher and T Jungwirth. Strain control of magnetic anisotropy in (Ga,Mn)As microbars. PHYSICAL REVIEW B 83(11), 2011. BibTeX

@article{ ISI:000288242800006,
	author = "King, C. S. and Zemen, J. and Olejnik, K. and Horak, L. and Haigh, J. A. and Novak, V. and Irvine, A. and Kucera, J. and Holy, V. and Campion, R. P. and Gallagher, B. L. and Jungwirth, T.",
	title = "{Strain control of magnetic anisotropy in (Ga,Mn)As microbars}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{2011}",
	volume = "{83}",
	number = "{11}",
	month = "{MAR 11}",
	abstract = "{We present an experimental and theoretical study of magnetocrystalline anisotropies in arrays of bars patterned lithographically into (Ga,Mn) As epilayers grown under compressive lattice strain. Structural properties of the (Ga,Mn) As microbars are investigated by high-resolution x-ray diffraction measurements. The experimental data, showing strong strain relaxation effects, are in good agreement with finite element simulations. Magnetization measurements are performed using a superconducting quantum interference device to study the control of magnetic anisotropy in (Ga,Mn) As by the lithographically induced strain relaxation of the microbars. Microscopic theoretical modeling of the anisotropy is performed based on the mean-field kinetic-exchange model of the ferromagnetic spin-orbit coupled band structure of (Ga,Mn) As. Based on the overall agreement between experimental data and theoretical modeling, we conclude that the micropatterning induced anisotropies are of magnetocrystalline, spin-orbit coupling origin.}",
	doi = "{10.1103/PhysRevB.83.115312}",
	article-number = "{115312}",
	issn = "{1098-0121}",
	researcherid-numbers = "{Olejnik, Kamil/I-7085-2012}",
	times-cited = "{2}",
	unique-id = "{ISI:000288242800006}"
}

T Jungwirth, V Novak, X Marti, M Cukr, F Maca, A B Shick, J Masek, P Horodyska, P Nemec, V Holy, J Zemek, P Kuzel, I Nemec, B L Gallagher, R P Campion, C T Foxon and J Wunderlich. Demonstration of molecular beam epitaxy and a semiconducting band structure for I-Mn-V compounds. PHYSICAL REVIEW B 83(3), 2011. BibTeX

@article{ ISI:000286770500009,
	author = "Jungwirth, T. and Novak, V. and Marti, X. and Cukr, M. and Maca, F. and Shick, A. B. and Masek, J. and Horodyska, P. and Nemec, P. and Holy, V. and Zemek, J. and Kuzel, P. and Nemec, I. and Gallagher, B. L. and Campion, R. P. and Foxon, C. T. and Wunderlich, J.",
	title = "{Demonstration of molecular beam epitaxy and a semiconducting band structure for I-Mn-V compounds}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{2011}",
	volume = "{83}",
	number = "{3}",
	month = "{JAN 24}",
	abstract = "{Our ab initio theory calculations predict a semiconducting band structure of I-Mn-V compounds. We demonstrate on LiMnAs that high-quality materials with group-I alkali metals in the crystal structure can be grown by molecular beam epitaxy. Optical measurements on the LiMnAs epilayers are consistent with the theoretical electronic structure. Our calculations also reproduce earlier reports of high antiferromagnetic ordering temperature and predict large, spin-orbit-coupling-induced magnetic anisotropy effects. We propose a strategy for employing antiferromagnetic semiconductors in high-temperature semiconductor spintronics.}",
	doi = "{10.1103/PhysRevB.83.035321}",
	article-number = "{035321}",
	issn = "{1098-0121}",
	researcherid-numbers = "{Shick, Alexander/C-1420-2013}",
	times-cited = "{11}",
	unique-id = "{ISI:000286770500009}"
}

M Barchuk, V Holy, B Miljevic, B Krause and T Baumbach. Grazing-incidence x-ray diffraction from GaN epitaxial layers with threading dislocations. APPLIED PHYSICS LETTERS 98(2), 2011. BibTeX

@article{ ISI:000286470800031,
	author = "Barchuk, M. and Holy, V. and Miljevic, B. and Krause, B. and Baumbach, T.",
	title = "{Grazing-incidence x-ray diffraction from GaN epitaxial layers with threading dislocations}",
	journal = "{APPLIED PHYSICS LETTERS}",
	year = "{2011}",
	volume = "{98}",
	number = "{2}",
	month = "{JAN 10}",
	abstract = "{We used high-resolution x-ray reciprocal space mapping in noncoplanar grazing-incidence geometry for the determination of the density of edge threading dislocations in c-oriented GaN epitaxial layers and we compared the measured intensity distributions with results of numerical Monte Carlo simulations of diffuse scattering. We demonstrated that a combination of diffraction data taken in coplanar symmetric and noncoplanar grazing-incidence geometries makes it possible to obtain the densities of screw and edge threading dislocations. (C) 2011 American Institute of Physics. {[}doi:10.1063/1.3543842]}",
	doi = "{10.1063/1.3543842}",
	article-number = "{021912}",
	issn = "{0003-6951}",
	times-cited = "{1}",
	unique-id = "{ISI:000286470800031}"
}

D Ristic, M Ivanda, M Marcius, V Holy, Z Siketic, I Bogdanovic-Rakovic, O Gamulin, K Furic, M Ristic, S Music, M Buljan, M Ferrari, A Chiasera, A Chiappini and G C Righini. Characterisation of thin LPCVD silicon-rich oxide films. In A Serpenguzel, GC Righini and A Leipertz (eds.). INTEGRATED PHOTONICS: MATERIALS, DEVICES, AND APPLICATIONS 8069. 2011. Conference on Integrated Photonics - Materials, Devices, and Applications, Prague, CZECH REPUBLIC, APR 18-20, 2011. BibTeX

@inproceedings{ ISI:000297622200017,
	author = "Ristic, D. and Ivanda, M. and Marcius, M. and Holy, V. and Siketic, Z. and Bogdanovic-Rakovic, I. and Gamulin, O. and Furic, K. and Ristic, M. and Music, S. and Buljan, M. and Ferrari, M. and Chiasera, A. and Chiappini, A. and Righini, G. C.",
	editor = "{Serpenguzel, A and Righini, GC and Leipertz, A}",
	title = "{Characterisation of thin LPCVD silicon-rich oxide films}",
	booktitle = "{INTEGRATED PHOTONICS: MATERIALS, DEVICES, AND APPLICATIONS}",
	series = "{Proceedings of SPIE}",
	year = "{2011}",
	volume = "{8069}",
	note = "{Conference on Integrated Photonics - Materials, Devices, and Applications, Prague, CZECH REPUBLIC, APR 18-20, 2011}",
	organization = "{SPIE}",
	abstract = "{Thin silicon rich oxide (SiOx) films were deposited using the LPCVD (Low Pressure Chemical Vapour Deposition) method. Silane diluted in argon and oxygen were used as the reactant gasses, and the deposition temperature was kept constant at 570 degrees C. The films were deposited on silicon (111) and on fused silica substrates. Films with the different values of the oxygen content were deposited by varying the ratio of the flows of oxygen and silane in the horizontal tube reactor. The films were characterized in terms on the surface quality (by X-ray specular reflectivity and scanning electron microscopy) and in terms of the oxygen content x (by time of flight elastic recoil detection analysis). The films were found to have a very smooth, homogeneous surface and the oxygen content was found to vary from x=0 to x=2 in dependence on the deposition parameters. The refractive indices of the films were measured both in the visible (405 nm) and in the infrared (1319 nm and 1542 nm), compared to the values which the Bruggeman's effective medium theory predicts for such thin films, and were found to be in good agreement. The position of the Si-O stretching peak in the infrared absorption spectra was used to draw some conclusion about the distribution of the silicon and oxygen atoms inside the amorphous SiOx matrix. The atoms were found to be inhomogeneously distributed inside the amorphous matrix, with the average number of oxygen atoms in the vicinity of a given silicon atoms being lower than x.}",
	doi = "{10.1117/12.886783}",
	article-number = "{80690P}",
	issn = "{0277-786X}",
	isbn = "{978-0-81948-658-5}",
	researcherid-numbers = "{Ferrari, Maurizio/H-3362-2011 Chiasera, Alessandro/A-9164-2013}",
	times-cited = "{0}",
	unique-id = "{ISI:000297622200017}"
}

M Buljan, S R C Pinto, A G Rolo, J Martin-Sanchez, M J M Gomes, J Grenzer, A Muecklich, S Bernstorff and V Holy. Self-assembling of Ge quantum dots in an alumina matrix. PHYSICAL REVIEW B 82(23), 2010. BibTeX

@article{ ISI:000286766300004,
	author = "Buljan, M. and Pinto, S. R. C. and Rolo, A. G. and Martin-Sanchez, J. and Gomes, M. J. M. and Grenzer, J. and Muecklich, A. and Bernstorff, S. and Holy, V.",
	title = "{Self-assembling of Ge quantum dots in an alumina matrix}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{2010}",
	volume = "{82}",
	number = "{23}",
	month = "{DEC 3}",
	abstract = "{In this work we report on a self-assembled growth of a Ge quantum dot lattice in a single 600-nm-thick Ge+Al(2)O(3) layer during magnetron sputtering deposition of a Ge+Al(2)O(3) mixture at an elevated substrate temperature. The self-assembly results in the formation of a well-ordered three-dimensional body-centered tetragonal quantum dot lattice within the whole deposited volume. The quantum dots formed are very small in size (less than 4.0 nm), have a narrow size distribution and a large packing density. The parameters of the quantum dot lattice can be tuned by changing the deposition parameters. The self-ordering of the quantum dots is explained by diffusion-mediated nucleation and surface-morphology effects and simulated by a kinetic Monte Carlo model.}",
	doi = "{10.1103/PhysRevB.82.235407}",
	article-number = "{235407}",
	issn = "{1098-0121}",
	researcherid-numbers = "{Rolo, Anabela/G-6990-2011}",
	times-cited = "{3}",
	unique-id = "{ISI:000286766300004}"
}

V Holy, X Marti, L Horak, O Caha, V Novak, M Cukr and T U Schuelli. Density of Mn interstitials in (Ga,Mn)As epitaxial layers determined by anomalous x-ray diffraction. APPLIED PHYSICS LETTERS 97(18), 2010. BibTeX

@article{ ISI:000283934100025,
	author = "Holy, V. and Marti, X. and Horak, L. and Caha, O. and Novak, V. and Cukr, M. and Schuelli, T. U.",
	title = "{Density of Mn interstitials in (Ga,Mn)As epitaxial layers determined by anomalous x-ray diffraction}",
	journal = "{APPLIED PHYSICS LETTERS}",
	year = "{2010}",
	volume = "{97}",
	number = "{18}",
	month = "{NOV 1}",
	abstract = "{Densities of Mn ions in epitaxial layers of (Ga,Mn)As were determined by anomalous x-ray diffraction, i.e., by a measurement of the dependence of the intensity of weak diffraction 002 on the photon energy around the Mn K absorption edge. From the measured data it was possible to determine the density of Mn ions in substitutional positions and the difference in the Mn densities in two possible interstitial positions in the GaAs lattice. The data demonstrate that the rate of the out-diffusion of the Mn interstitials from the Ga tetrahedrons significantly exceeds that from the As tetrahedrons. (C) 2010 American Institute of Physics. {[}doi:10.1063/1.3514240]}",
	doi = "{10.1063/1.3514240}",
	article-number = "{181913}",
	issn = "{0003-6951}",
	researcherid-numbers = "{Caha, Ondrej/E-4716-2012}",
	times-cited = "{1}",
	unique-id = "{ISI:000283934100025}"
}

M Buljan, J Grenzer, V Holy, N Radic, T Misic-Radic, S Levichev, S Bernstorff, B Pivac and I Capan. Structural and charge trapping properties of two bilayer (Ge+SiO2)/SiO2 films deposited on rippled substrate. APPLIED PHYSICS LETTERS 97(16), 2010. BibTeX

@article{ ISI:000283502100073,
	author = "Buljan, M. and Grenzer, J. and Holy, V. and Radic, N. and Misic-Radic, T. and Levichev, S. and Bernstorff, S. and Pivac, B. and Capan, I.",
	title = "{Structural and charge trapping properties of two bilayer (Ge+SiO2)/SiO2 films deposited on rippled substrate}",
	journal = "{APPLIED PHYSICS LETTERS}",
	year = "{2010}",
	volume = "{97}",
	number = "{16}",
	month = "{OCT 18}",
	abstract = "{We report on structural properties and charge trapping in {[}(Ge+SiO2)/SiO2]x2 films deposited by magnetron sputtering on a periodically corrugated-rippled substrate and annealed in vacuum and forming gas. The rippled substrate caused a self-ordered growth of Ge quantum dots, while annealing in different environments enabled us to separate charge trapping in quantum dots from the trapping at the dot-matrix and matrix-substrate interfaces. We show that the charge trapping occurs mainly in Ge quantum dots in the films annealed in the forming gas, while Si-SiO2 interface trapping is dominant for the vacuum annealed films. (C) 2010 American Institute of Physics. {[}doi: 10.1063/1.3504249]}",
	doi = "{10.1063/1.3504249}",
	article-number = "{163117}",
	issn = "{0003-6951}",
	times-cited = "{6}",
	unique-id = "{ISI:000283502100073}"
}

M Buljan, J Grenzer, A Keller, N Radic, V Vales, S Bernstorff, T Cornelius, H T Metzger and V Holy. Growth of spatially ordered Ge nanoclusters in an amorphous matrix on rippled substrates. PHYSICAL REVIEW B 82(12), 2010. BibTeX

@article{ ISI:000281845900007,
	author = "Buljan, M. and Grenzer, J. and Keller, A. and Radic, N. and Vales, V. and Bernstorff, S. and Cornelius, T. and Metzger, H. T. and Holy, V.",
	title = "{Growth of spatially ordered Ge nanoclusters in an amorphous matrix on rippled substrates}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{2010}",
	volume = "{82}",
	number = "{12}",
	month = "{SEP 14}",
	abstract = "{So far, the growth of spatially ordered nanoclusters by multilayer deposition has been reported and explained satisfactorily only in crystalline materials. Here we demonstrate a method for the growth of spatially ordered nanoclusters in amorphous matrices, where the ordering is achieved in the single large domain. The regular ordering is induced by the deposition of a multilayer on a periodically rippled substrate at an elevated substrate temperature. During the deposition, the nanoclusters self-arrange, following the morphology of the substrate.}",
	doi = "{10.1103/PhysRevB.82.125316}",
	article-number = "{125316}",
	issn = "{1098-0121}",
	researcherid-numbers = "{Cornelius, Thomas/D-4850-2012}",
	times-cited = "{4}",
	unique-id = "{ISI:000281845900007}"
}

M Barchuk, V Holy, B Miljevic, B Krause, T Baumbach, J Hertkorn and F Scholz. X-ray diffuse scattering from threading dislocations in epitaxial GaN layers. JOURNAL OF APPLIED PHYSICS 108(4), 2010. BibTeX

@article{ ISI:000281857100052,
	author = "Barchuk, M. and Holy, V. and Miljevic, B. and Krause, B. and Baumbach, T. and Hertkorn, J. and Scholz, F.",
	title = "{X-ray diffuse scattering from threading dislocations in epitaxial GaN layers}",
	journal = "{JOURNAL OF APPLIED PHYSICS}",
	year = "{2010}",
	volume = "{108}",
	number = "{4}",
	month = "{AUG 15}",
	abstract = "{In this article, we combine diffuse x-ray scattering with a Monte Carlo simulation method for the determination of the dislocation density in thin heteroepitaxial layers. As a model, we consider GaN epitaxial layers containing threading dislocations perpendicular to the surface. The densities of particular types of threading dislocations following from the comparison of measured and simulated distributions of diffusely scattered x-ray intensity are compared with the dislocation densities determined by etching. A good agreement was found. (C) 2010 American Institute of Physics. {[}doi:10.1063/1.3460803]}",
	doi = "{10.1063/1.3460803}",
	article-number = "{043521}",
	issn = "{0021-8979}",
	times-cited = "{4}",
	unique-id = "{ISI:000281857100052}"
}

L Horak, Z Soban and V Holy. Study of Mn interstitials in (Ga, Mn) As using high-resolution x-ray diffraction. JOURNAL OF PHYSICS-CONDENSED MATTER 22(29), 2010. BibTeX

@article{ ISI:000279616000034,
	author = "Horak, L. and Soban, Z. and Holy, V.",
	title = "{Study of Mn interstitials in (Ga, Mn) As using high-resolution x-ray diffraction}",
	journal = "{JOURNAL OF PHYSICS-CONDENSED MATTER}",
	year = "{2010}",
	volume = "{22}",
	number = "{29}",
	month = "{JUL 28}",
	abstract = "{We present a method for the determination of the concentration of Mn ions in nonequivalent interstitial positions in the lattice of (Ga, Mn) As. The Mn ions occupy substitutional and/or interstitial positions in the GaAs lattice and the dependence of the structure factor on their concentration differs for various diffractions and for different positions in the lattice. We measured several diffractions including weak diffractions, which are very sensitive to the Mn content. All measured diffraction curves were simultaneously fitted to a theoretical model and the densities of Mn ions, in particular interstitial positions, were obtained. The method reported here allows us to determine the amount of interstitial Mn which, according to current understanding, affects the ferromagnetic properties including the Curie temperature in (Ga, Mn) As.}",
	doi = "{10.1088/0953-8984/22/29/296009}",
	article-number = "{296009}",
	issn = "{0953-8984}",
	times-cited = "{2}",
	unique-id = "{ISI:000279616000034}"
}

M Buljan, I Bogdanovic-Radovic, M Karlusic, U V Desnica, N Radic, N Skukan, G Drazic, M Ivanda, O Gamulin, Z Matej, V Vales, J Grenzer, T W Cornelius, H T Metzger and V Holy. Generation of an ordered Ge quantum dot array in an amorphous silica matrix by ion beam irradiation: Modeling and structural characterization. PHYSICAL REVIEW B 81(8), Únor 2010. BibTeX

@article{ ISI:000275053300088,
	author = "Buljan, M. and Bogdanovic-Radovic, I. and Karlusic, M. and Desnica, U. V. and Radic, N. and Skukan, N. and Drazic, G. and Ivanda, M. and Gamulin, O. and Matej, Z. and Vales, V. and Grenzer, J. and Cornelius, T. W. and Metzger, H. T. and Holy, V.",
	title = "{Generation of an ordered Ge quantum dot array in an amorphous silica matrix by ion beam irradiation: Modeling and structural characterization}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{2010}",
	volume = "{81}",
	number = "{8}",
	month = "{FEB}",
	abstract = "{We studied the generation of an ordered Ge quantum dot array in an amorphous silica matrix by ion beam irradiation. In particular we investigated the influence of the irradiation process on the nucleation of Ge clusters, on the correlations in their positions and on the crystalline quality of Ge quantum dots formed after subsequent annealing. We have developed a method for the description of the intensity of grazing-incidence x-ray small-angle scattering from irradiated multilayers, which enables a precise determination of the arrangement of quantum dots as well as their position correlation and size distribution. The analysis shows that the irradiation causes an ordering of Ge clusters along the irradiation direction, which substantially improves the correlations of the Ge dot locations in their three-dimensional array. The observed phenomena are explained and simulated by a Monte Carlo model based on the modification of local Ge density induced by ion tracks in the irradiated multilayers.}",
	doi = "{10.1103/PhysRevB.81.085321}",
	article-number = "{085321}",
	issn = "{1098-0121}",
	researcherid-numbers = "{Cornelius, Thomas/D-4850-2012 Ivanda, Mile/J-3772-2012}",
	times-cited = "{10}",
	unique-id = "{ISI:000275053300088}"
}

Vaclav Vales, Jana Poltierova-Vejpravova, Vaclav Holy, Vaclav Tyrpekl, Petr Brazda and Stephen Doyle. Study of the phase composition of Fe(2)O(3) and Fe(2)O(3)/TiO(2) nanoparticles using X-ray diffraction and Debye formula. In M Stutzmann and S Hildebrandt (eds.). PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 5 7(5). 2010, 1399-1404. E-MRS Fall Meeting Symposium A InN Material and Alloys, Warsaw, POLAND, SEP 14-18, 2009. BibTeX

@inproceedings{ ISI:000289858300026,
	author = "Vales, Vaclav and Poltierova-Vejpravova, Jana and Holy, Vaclav and Tyrpekl, Vaclav and Brazda, Petr and Doyle, Stephen",
	editor = "{Stutzmann, M and Hildebrandt, S}",
	title = "{Study of the phase composition of Fe(2)O(3) and Fe(2)O(3)/TiO(2) nanoparticles using X-ray diffraction and Debye formula}",
	booktitle = "{PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 5}",
	series = "{Physica Status Solidi C-Current Topics in Solid State Physics}",
	year = "{2010}",
	volume = "{7}",
	number = "{5}",
	pages = "{1399-1404}",
	note = "{E-MRS Fall Meeting Symposium A InN Material and Alloys, Warsaw, POLAND, SEP 14-18, 2009}",
	abstract = "{Phase changes in Fe(2)O(3) and Fe(2)O(3)/TiO(2) nanoparticles were studied by X-ray diffraction. Because of a very small size of the particles, standard methods of data analysis based on the physical broadening of lines and instrumental function fail and calculations based on the Debye formula were used instead. The measured data from both types of particles were analyzed assuming a core-shell model of the phase composition of the particles and the dependence of the particle size and phase composition on the annealing temperature was determined. In both types of nanoparticles a phase transition was observed and the amount of a new phase increases with the annealing temperature. (c) 2010 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim}",
	doi = "{10.1002/pssc.200983385}",
	issn = "{1862-6351}",
	times-cited = "{1}",
	unique-id = "{ISI:000289858300026}"
}

M Mixa, V Holy, G Springholz and G Bauer. Kinetic Monte Carlo simulation of quantum-dot nucleation and growth in PbSe/PbEuTe multilayers. In RA Taylor (ed.). QUANTUM DOTS 2010 245. 2010. Conference on Quantum Dots 2010 (QD2010), Nottingham, ENGLAND, APR 26-30, 2010. BibTeX

@inproceedings{ ISI:000294907400091,
	author = "Mixa, M. and Holy, V. and Springholz, G. and Bauer, G.",
	editor = "{Taylor, RA}",
	title = "{Kinetic Monte Carlo simulation of quantum-dot nucleation and growth in PbSe/PbEuTe multilayers}",
	booktitle = "{QUANTUM DOTS 2010}",
	series = "{Journal of Physics Conference Series}",
	year = "{2010}",
	volume = "{245}",
	note = "{Conference on Quantum Dots 2010 (QD2010), Nottingham, ENGLAND, APR 26-30, 2010}",
	abstract = "{We study the influence of different growth conditions on the structural properties of self-organized quantum-dot multilayers PbSe/PbEuTe(111). The kinetic Monte Carlo method is employed and the simulations show that mainly the quality of the dot ordering is affected when the growth conditions are slightly changed.}",
	doi = "{10.1088/1742-6596/245/1/012091}",
	article-number = "{012091}",
	issn = "{1742-6588}",
	times-cited = "{0}",
	unique-id = "{ISI:000294907400091}"
}

Maja Buljan, Sara R C Pinto, Reza J Kashtiban, Anabela G Rolo, Adil Chahboun, Ursel Bangert, Sergey Levichev, Vaclav Holy and Maria J M Gomes. Size and spatial homogeneity of SiGe quantum dots in amorphous silica matrix. JOURNAL OF APPLIED PHYSICS 106(8), 2009. BibTeX

@article{ ISI:000271358100094,
	author = "Buljan, Maja and Pinto, Sara R. C. and Kashtiban, Reza J. and Rolo, Anabela G. and Chahboun, Adil and Bangert, Ursel and Levichev, Sergey and Holy, Vaclav and Gomes, Maria J. M.",
	title = "{Size and spatial homogeneity of SiGe quantum dots in amorphous silica matrix}",
	journal = "{JOURNAL OF APPLIED PHYSICS}",
	year = "{2009}",
	volume = "{106}",
	number = "{8}",
	month = "{OCT 15}",
	abstract = "{In this paper, we present a study of structural properties of SiGe quantum dots formed in amorphous silica matrix by magnetron sputtering technique. We investigate deposition conditions leading to the formation of dense and uniformly sized quantum dots, distributed homogeneously in the matrix. X-ray and Raman spectroscopy were used to estimate the Si content. A detailed analysis based on grazing incidence small angle x-ray scattering revealed the influence of the deposition conditions on quantum dot sizes, size distributions, spatial arrangement, and concentration of quantum dots in the matrix, as well as the Si: Ge content. (C) 2009 American Institute of Physics. {[}doi: 10.1063/1.3248373]}",
	doi = "{10.1063/1.3248373}",
	article-number = "{084319}",
	issn = "{0021-8979}",
	researcherid-numbers = "{Jalili Kashtiban, Reza/F-7221-2010 Kashtiban, Reza/E-7998-2010 Rolo, Anabela/G-6990-2011 Chahboun, Adil/B-5867-2009}",
	times-cited = "{4}",
	unique-id = "{ISI:000271358100094}"
}

M Buljan, I Bogdanovic-Radovic, M Karlusic, U V Desnica, G Drazic, N Radic, P Dubcek, K Salamon, S Bernstorff and V Holy. Formation of long-range ordered quantum dots arrays in amorphous matrix by ion beam irradiation. APPLIED PHYSICS LETTERS 95(6), 2009. BibTeX

@article{ ISI:000269060600055,
	author = "Buljan, M. and Bogdanovic-Radovic, I. and Karlusic, M. and Desnica, U. V. and Drazic, G. and Radic, N. and Dubcek, P. and Salamon, K. and Bernstorff, S. and Holy, V.",
	title = "{Formation of long-range ordered quantum dots arrays in amorphous matrix by ion beam irradiation}",
	journal = "{APPLIED PHYSICS LETTERS}",
	year = "{2009}",
	volume = "{95}",
	number = "{6}",
	month = "{AUG 10}",
	abstract = "{We demonstrate the production of a well ordered three-dimensional array of Ge quantum dots in amorphous silica matrix. The ordering is achieved by ion beam irradiation and annealing of a multilayer film. Structural analysis shows that quantum dots nucleate along the direction of the ion beam used for irradiation, while the mutual distance of the quantum dots is determined by the diffusion properties of the multilayer material rather than the distances between traces of ions that are used for irradiation.}",
	doi = "{10.1063/1.3204007}",
	article-number = "{063104}",
	issn = "{0003-6951}",
	times-cited = "{14}",
	unique-id = "{ISI:000269060600055}"
}

Maja Buljan, Uros V Desnica, Nikola Radic, Goran Drazic, Zdenek Matej, Vaclav Vales and Vaclav Holy. Crystal structure of defect-containing semiconductor nanocrystals - an X-ray diffraction study. JOURNAL OF APPLIED CRYSTALLOGRAPHY 42:660-672, Srpen 2009. BibTeX

@article{ ISI:000268068000014,
	author = "Buljan, Maja and Desnica, Uros V. and Radic, Nikola and Drazic, Goran and Matej, Zdenek and Vales, Vaclav and Holy, Vaclav",
	title = "{Crystal structure of defect-containing semiconductor nanocrystals - an X-ray diffraction study}",
	journal = "{JOURNAL OF APPLIED CRYSTALLOGRAPHY}",
	year = "{2009}",
	volume = "{42}",
	pages = "{660-672}",
	month = "{AUG}",
	abstract = "{Defects of crystal structure in semiconductor nanocrystals embedded in an amorphous matrix are studied by X-ray diffraction and a full-profile analysis of the diffraction curves based on the Debye formula. A new theoretical model is proposed, describing the diffraction from randomly distributed intrinsic and extrinsic stacking faults and twin blocks in the nanocrystals. The application of the model to full-profile analysis of experimental diffraction curves enables the determination of the concentrations of individual defect types in the nanocrystals. The method has been applied for the investigation of self-organized Ge nanocrystals in an SiO(2) matrix, and the dependence of the structure quality of the nanocrystals on their deposition and annealing parameters was obtained.}",
	doi = "{10.1107/S0021889809017476}",
	issn = "{0021-8898}",
	times-cited = "{2}",
	unique-id = "{ISI:000268068000014}"
}

R T Lechner, V Holy, S Ahlers, D Bougeard, J Stangl, A Trampert, A Navarro-Quezada and G Bauer. Self-assembled Mn5Ge3 nanomagnets close to the surface and deep inside a Ge1-xMnx epilayer. APPLIED PHYSICS LETTERS 95(2), 2009. BibTeX

@article{ ISI:000268089200078,
	author = "Lechner, R. T. and Holy, V. and Ahlers, S. and Bougeard, D. and Stangl, J. and Trampert, A. and Navarro-Quezada, A. and Bauer, G.",
	title = "{Self-assembled Mn5Ge3 nanomagnets close to the surface and deep inside a Ge1-xMnx epilayer}",
	journal = "{APPLIED PHYSICS LETTERS}",
	year = "{2009}",
	volume = "{95}",
	number = "{2}",
	month = "{JUL 13}",
	abstract = "{Under defined growth conditions ferromagnetic hexagonal Mn5Ge3 precipitates are formed in cubic Ge1-xMnx epilayers. To study the topotaxial relationship of these nanomagnets we perform x-ray diffraction experiments in coplanar as well as in grazing incidence geometries at synchrotron sources. Additionally, to the well defined topotaxial relation derived for buried nanomagnets deep within the Ge layer, we found an additional class of Mn5Ge3 precipitates very close to the surface, with larger inclusion diameter and several different crystallographic orientations with respect to the buried ones.}",
	doi = "{10.1063/1.3159827}",
	article-number = "{023102}",
	issn = "{0003-6951}",
	times-cited = "{8}",
	unique-id = "{ISI:000268089200078}"
}

M Mixa, V Holy, G Springholz and G Bauer. Kinetic Monte Carlo simulation of self-organized growth of PbSe/PbEuTe quantum dot multilayers. PHYSICAL REVIEW B 80(4), Červenec 2009. BibTeX

@article{ ISI:000268618100084,
	author = "Mixa, M. and Holy, V. and Springholz, G. and Bauer, G.",
	title = "{Kinetic Monte Carlo simulation of self-organized growth of PbSe/PbEuTe quantum dot multilayers}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{2009}",
	volume = "{80}",
	number = "{4}",
	month = "{JUL}",
	abstract = "{The heteroepitaxial growth in self-assembled quantum dot multilayers is investigated using kinetic Monte Carlo simulations and a quantitative comparison with experiment is included. We study the self-organization effect in the PbSe/PbEuTe(111) semiconductor system. For this purpose we developed an efficient kinetic Monte Carlo model enabling us to simulate multilayers consisting of tens of periods with hundreds of three-dimensional islands. We corroborate that the lateral and vertical-dot correlations are caused mainly by the strain field induced by buried dots. A progressive self-ordering from period to period in a growing multilayer is clearly illustrated. We also reproduced all three experimentally observed dot arrangements in the PbSe/PbEuTe(111) superlattices inclusive of two abrupt transitions between them. Moreover, we achieved a good quantitative agreement with the experimentally measured dependence of lateral-dot distance on spacer-layer thickness. The advantages and shortcomings of our model are analyzed in detail.}",
	doi = "{10.1103/PhysRevB.80.045325}",
	article-number = "{045325}",
	issn = "{1098-0121}",
	times-cited = "{2}",
	unique-id = "{ISI:000268618100084}"
}

M -I Richard, T U Schuelli, G Renaud, E Wintersberger, G Chen, G Bauer and V Holy. In situ x-ray scattering study on the evolution of Ge island morphology and relaxation for low growth rate: Advanced transition to superdomes. PHYSICAL REVIEW B 80(4), Červenec 2009. BibTeX

@article{ ISI:000268618100072,
	author = "Richard, M. -I. and Schuelli, T. U. and Renaud, G. and Wintersberger, E. and Chen, G. and Bauer, G. and Holy, V.",
	title = "{In situ x-ray scattering study on the evolution of Ge island morphology and relaxation for low growth rate: Advanced transition to superdomes}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{2009}",
	volume = "{80}",
	number = "{4}",
	month = "{JUL}",
	abstract = "{The kinetics of the growth of Ge superdomes and their facets on Si(001) surfaces are analyzed as a function of deposited Ge thickness for different growth temperatures and at a low growth rate by in situ grazing-incidence small-angle x-ray scattering in combination with in situ grazing-incidence x-ray diffraction. At a low growth rate, intermixing is found to be enhanced and superdomes are formed already at lower coverages than previously reported. In addition, we observe that at the dome-to-superdome transition, a large amount of material is transferred into dislocated islands, either by dome coalescence or by anomalous coarsening. Once dislocated islands are formed, island coalescence is a rare event and introduction of dislocations is preferred. The superdome growth is thus stabilized by the insertion of dislocations during growth.}",
	doi = "{10.1103/PhysRevB.80.045313}",
	article-number = "{045313}",
	issn = "{1098-0121}",
	researcherid-numbers = "{Richard, Marie-Ingrid/F-6693-2012}",
	times-cited = "{13}",
	unique-id = "{ISI:000268618100072}"
}

T Fromherz, J Stangl, R T Lechner, E Wintersberger, G Bauer, V Holy, C Dais, E Mueller, H Sigg, H H Solak and D Gruetzmacher. 3D SiGe QUANTUM DOT CRYSTALS: STRUCTURAL CHARACTERIZATION AND ELECTRONIC COUPLING. INTERNATIONAL JOURNAL OF MODERN PHYSICS B 23(12-13):2836-2841, 2009. 18th International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology, Sao Pedro, BRAZIL, AUG 03-08, 2008. BibTeX

@article{ ISI:000266913000046,
	author = "Fromherz, T. and Stangl, J. and Lechner, R. T. and Wintersberger, E. and Bauer, G. and Holy, V. and Dais, C. and Mueller, E. and Sigg, H. and Solak, H. H. and Gruetzmacher, D.",
	title = "{3D SiGe QUANTUM DOT CRYSTALS: STRUCTURAL CHARACTERIZATION AND ELECTRONIC COUPLING}",
	journal = "{INTERNATIONAL JOURNAL OF MODERN PHYSICS B}",
	year = "{2009}",
	volume = "{23}",
	number = "{12-13}",
	pages = "{2836-2841}",
	month = "{MAY 20}",
	note = "{18th International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology, Sao Pedro, BRAZIL, AUG 03-08, 2008}",
	abstract = "{We report on the growth of SiGe quantum dot crystals which are realized by depositing Ge on a two-dimensionally pit-patterned Si substrate and subsequent growth of Si spacer and Ge island layers. Lateral periods of 100 nm are obtained by employing deep UV lithography using synchrotron radiation. The vertical period of the typically 10 period dot superlattices was of the order of 10 nm. Ordering of the islands was investigated by atomic force microscopy as well as by high resolution x-ray diffraction studies. From the quantitative evaluation of the x-ray diffraction data a mean Ge content of about 60\% in the quantum dots was obtained and an rms. deviation from ideal lattice sites of about 3 nm was found. A simulation of the eigenenergies based on the nextnano(3) simulation package was used to interpret the measured photoluminescence data.}",
	issn = "{0217-9792}",
	researcherid-numbers = "{Sigg, Hans/B-4323-2013}",
	times-cited = "{2}",
	unique-id = "{ISI:000266913000046}"
}

Mario Keplinger, Thomas Martensson, Julian Stangl, Eugen Wintersberger, Bernhard Mandl, Dominik Kriegner, Vaclav Holy, Guenther Bauer, Knut Deppert and Lars Samuelson. Structural Investigations of Core-shell Nanowires Using Grazing Incidence X-ray Diffraction. NANO LETTERS 9(5):1877-1882, Květen 2009. BibTeX

@article{ ISI:000266157100027,
	author = "Keplinger, Mario and Martensson, Thomas and Stangl, Julian and Wintersberger, Eugen and Mandl, Bernhard and Kriegner, Dominik and Holy, Vaclav and Bauer, Guenther and Deppert, Knut and Samuelson, Lars",
	title = "{Structural Investigations of Core-shell Nanowires Using Grazing Incidence X-ray Diffraction}",
	journal = "{NANO LETTERS}",
	year = "{2009}",
	volume = "{9}",
	number = "{5}",
	pages = "{1877-1882}",
	month = "{MAY}",
	abstract = "{The fabrication of core-shell structures is crucial for many nanowire device concepts. For the proper tailoring of their electronic properties, control of structural parameters such as shape, size, diameter of core and shell, their chemical composition, and information on their strain fields is mandatory. Using synchrotron X-ray diffraction studies and finite element simulations, we determined the chemical composition, dimensions, and strain distribution for series of InAs/InAsP core-shell wires grown on Si(111) with systematically varied growth parameters. In particular we detect initiation of plastic relaxation of these structures with increasing shell thickness and/or increasing phosphorus content. We establish a phase diagram, defining the region of parameters leading to pseudomorphic nanowire growth. This is important to avoid extended defects which are detrimental for their electronic properties.}",
	doi = "{10.1021/nl803881b}",
	issn = "{1530-6984}",
	researcherid-numbers = "{Martensson, Thomas/A-8233-2008 Samuelson, Lars/A-2171-2010 Mandl, Bernhard/B-4628-2010 Deppert, Knut/A-6719-2008 Kriegner, Dominik/C-6225-2013}",
	times-cited = "{16}",
	unique-id = "{ISI:000266157100027}"
}

J Krcmar, V Holy and I Vavra. Standing-wave-grazing-incidence x-ray diffraction from polycrystalline multilayers. APPLIED PHYSICS LETTERS 94(10), 2009. BibTeX

@article{ ISI:000264280000027,
	author = "Krcmar, J. and Holy, V. and Vavra, I.",
	title = "{Standing-wave-grazing-incidence x-ray diffraction from polycrystalline multilayers}",
	journal = "{APPLIED PHYSICS LETTERS}",
	year = "{2009}",
	volume = "{94}",
	number = "{10}",
	month = "{MAR 9}",
	abstract = "{The intensity of x-ray diffraction from a polycrystalline multilayer in a grazing-incidence scattering geometry is modulated by a standing wave created by the interference of the radiation transmitted through the multilayer stack with the wave field specularly reflected from the superlattice interfaces. This effect is used for the structure investigation of Nb/Si periodic multilayers. The experimental data have been modeled using the distorted-wave Born approximation and a good correspondence with the experiments was achieved, and it was possible to determine the thicknesses of crystalline and amorphous parts of the Nb layers as well as the mean size of the crystallites.}",
	doi = "{10.1063/1.3095496}",
	article-number = "{101909}",
	issn = "{0003-6951}",
	times-cited = "{0}",
	unique-id = "{ISI:000264280000027}"
}

M Buljan, U V Desnica, G Drazic, M Ivanda, N Radic, P Dubcek, K Salamon, S Bernstorff and V Holy. The influence of deposition temperature on the correlation of Ge quantum dot positions in amorphous silica matrix. NANOTECHNOLOGY 20(8), 2009. BibTeX

@article{ ISI:000263071100024,
	author = "Buljan, M. and Desnica, U. V. and Drazic, G. and Ivanda, M. and Radic, N. and Dubcek, P. and Salamon, K. and Bernstorff, S. and Holy, V.",
	title = "{The influence of deposition temperature on the correlation of Ge quantum dot positions in amorphous silica matrix}",
	journal = "{NANOTECHNOLOGY}",
	year = "{2009}",
	volume = "{20}",
	number = "{8}",
	month = "{FEB 25}",
	abstract = "{We studied the structural properties of (Ge + SiO(2))/SiO(2) multilayer films, especially the influence of the deposition temperature and the parameters of subsequent annealing on the formation and spatial correlation of Ge quantum dots in an amorphous silica matrix. We showed that in-layer and inter-layer spatial correlations of the formed Ge quantum dots strongly depend on the deposition temperature. For suitable chosen deposition parameters, highly correlated dot positions in all three dimensions can be obtained. It is demonstrated that the degree of the spatial correlation of quantum dots influences the size distribution width, which further affects the macroscopic properties of the quantum dot arrays.}",
	doi = "{10.1088/0957-4484/20/8/085612}",
	article-number = "{085612}",
	issn = "{0957-4484}",
	researcherid-numbers = "{Ivanda, Mile/J-3772-2012}",
	times-cited = "{19}",
	unique-id = "{ISI:000263071100024}"
}

N Hrauda, J J Zhang, M Stoffel, J Stangl, G Bauer, A Rehman-Khan, V Holy, O G Schmidt, V Jovanovic and L K Nanver. X-ray diffraction study of the composition and strain fields in buried SiGe islands. EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS 167:41-46, Únor 2009. BibTeX

@article{ ISI:000264243400007,
	author = "Hrauda, N. and Zhang, J. J. and Stoffel, M. and Stangl, J. and Bauer, G. and Rehman-Khan, A. and Holy, V. and Schmidt, O. G. and Jovanovic, V. and Nanver, L. K.",
	title = "{X-ray diffraction study of the composition and strain fields in buried SiGe islands}",
	journal = "{EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS}",
	year = "{2009}",
	volume = "{167}",
	pages = "{41-46}",
	month = "{FEB}",
	abstract = "{We report on studies of strain and composition of two-dimensionally ordered SiGe islands grown by molecular beam epitaxy using high resolution x-ray diffraction. To ensure a small size distribution of the islands, pit-patterned 4 `' (001) Si wafers were used as substrates. The Si wafers were patterned by optical lithography and reactive ion etching. The pits for island growth are ordered in regular 2D arrays with periods ranging from 500 to 1000 nm along two orthogonal < 110 > directions. After the growth of a Si buffer layer, 5 to 9 monolayers of Ge are deposited, leading to the formation of islands with either dome- or barn shape, depending on the number of monolayers deposited. The Si capping of the islands is performed at low temperatures (300 degrees C) to avoid intermixing and thus strain relaxation. Information on the surface morphology obtained by atomic force microscopy (AFM) was used to set up models for three-dimensional Finite Element Method (FEM) simulations of the islands including the patterned Si substrate. In the model, special attention was given to the non uniform distribution of the Ge content within the islands. The FEM results served as an input for calculating the diffracted x-ray intensities using kinematical scattering theory. Reciprocal space maps around the vicinity of symmetric (004) and asymmetric (113) and (224) Bragg peaks were recorded in coplanar geometry. Simulating different germanium gradients leads to altered scattered intensity distribution and consequently information on this quantity is obtained for both dome- and barn-shaped islands as well as on the strain fields.}",
	doi = "{10.1140/epjst/e2009-00934-7}",
	issn = "{1951-6355}",
	researcherid-numbers = "{Jovanovic, Vladimir/F-4035-2010 Zhang, Jianjun/K-3747-2012}",
	times-cited = "{1}",
	unique-id = "{ISI:000264243400007}"
}

M Buljan, U V Desnica, M Ivanda, N Radic, P Dubcek, G Drazic, K Salamon, S Bernstorff and V Holy. Formation of three-dimensional quantum-dot superlattices in amorphous systems: Experiments and Monte Carlo simulations. PHYSICAL REVIEW B 79(3), Leden 2009. BibTeX

@article{ ISI:000262978200078,
	author = "Buljan, M. and Desnica, U. V. and Ivanda, M. and Radic, N. and Dubcek, P. and Drazic, G. and Salamon, K. and Bernstorff, S. and Holy, V.",
	title = "{Formation of three-dimensional quantum-dot superlattices in amorphous systems: Experiments and Monte Carlo simulations}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{2009}",
	volume = "{79}",
	number = "{3}",
	month = "{JAN}",
	abstract = "{Quantum dots ordered in regular lattices, called quantum-dot superlattices, offer numerous possibilities for the creation of novel materials. The formation of such structures during multilayer deposition has been studied and explained satisfactorily only in crystalline materials. Here we are reporting the spontaneous formation of quantum-dot superlattices in amorphous systems. The observed superlattices comprise Ge quantum dots embedded in amorphous SiO(2) matrix. The internal structure and shape of Ge quantum dots can be controlled by postdeposition thermal annealing. The superlattices show collective behavior properties that appear to be the consequence of a regular ordering of quantum dots. The observed self-organized growth is explained and successfully simulated by a theoretical model based on the interplay of diffusion-mediated nucleation and surface morphology effects. The presented results can be applied more generally and show the ability of formation of regularly ordered, densely packed, and uniformly sized quantum-dot arrays in amorphous matrices.}",
	doi = "{10.1103/PhysRevB.79.035310}",
	article-number = "{035310}",
	issn = "{1098-0121}",
	researcherid-numbers = "{Ivanda, Mile/J-3772-2012}",
	times-cited = "{21}",
	unique-id = "{ISI:000262978200078}"
}

Vaclav Holy, Julian Stangl, Thomas Fromherz, Rainer T Lechner, Eugene Wintersberger, Guenther Bauer, Christian Dais, Elisabeth Mueller and Detlev Gruetzmacher. X-ray diffraction investigation of a three-dimensional Si/SiGe quantum dot crystal. PHYSICAL REVIEW B 79(3), Leden 2009. BibTeX

@article{ ISI:000262978200092,
	author = "Holy, Vaclav and Stangl, Julian and Fromherz, Thomas and Lechner, Rainer T. and Wintersberger, Eugene and Bauer, Guenther and Dais, Christian and Mueller, Elisabeth and Gruetzmacher, Detlev",
	title = "{X-ray diffraction investigation of a three-dimensional Si/SiGe quantum dot crystal}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{2009}",
	volume = "{79}",
	number = "{3}",
	month = "{JAN}",
	abstract = "{High-resolution x-ray diffraction was employed to study the structural properties of a three-dimensional periodic arrangement of SiGe quantum dots in a Si matrix. Using extreme ultraviolet lithography at a synchrotron source a two-dimensional array of pits (period 90x100 nm(2)) was defined and transferred into a (001) Si wafer by reactive ion etching. By molecular-beam epitaxy SiGe islands of about 30 nm diameter and 3 nm height were grown into the pits. Subsequent deposition of Si spacer layers of 10 nm thickness and SiGe island layers results in a three-dimensionally periodic arrangement of quantum dots, mediated by the strain fields of the buried dots. Their so far unmatched structural perfection is assessed by coplanar x-ray diffractometry using synchrotron radiation. Reciprocal-space maps around the (004) and (224) reciprocal-lattice maps were recorded and analyzed to get quantitative information on the disorder of the dot positions and to obtain the mean Ge content of the dots. In addition, information on the strain fields was deduced from the analysis of the diffraction data. Together with atomic force microscopy data on the island shape and size distribution, a complete structural characterization is achieved.}",
	doi = "{10.1103/PhysRevB.79.035324}",
	article-number = "{035324}",
	issn = "{1098-0121}",
	times-cited = "{14}",
	unique-id = "{ISI:000262978200092}"
}

L Horak, V Holy, C R Staddon, N R S Farley, S V Novikov, R P Campion and C T Foxon. X-ray in-plane scattering investigation of GaN nanorods. JOURNAL OF APPLIED PHYSICS 104(10), 2008. BibTeX

@article{ ISI:000262605800031,
	author = "Horak, L. and Holy, V. and Staddon, C. R. and Farley, N. R. S. and Novikov, S. V. and Campion, R. P. and Foxon, C. T.",
	title = "{X-ray in-plane scattering investigation of GaN nanorods}",
	journal = "{JOURNAL OF APPLIED PHYSICS}",
	year = "{2008}",
	volume = "{104}",
	number = "{10}",
	month = "{NOV 15}",
	abstract = "{An x-ray method is described for the structure characterization of semiordered GaN nanorods. In contrast to other works based on synchrotron radiation, the method uses a standard x-ray laboratory equipment so that it is suitable for a rapid characterization of the nanorods in a technological laboratory. The method uses a grazing-incidence diffraction setup and it makes it possible to determine the mean size of the rods and their angular twist with respect to the crystalline substrate. The applicability of the method is demonstrated on a series of GaN nanorod samples and the parameters of the nanorods are compared with the results of scanning electron microscopy.}",
	doi = "{10.1063/1.3021090}",
	article-number = "{103504}",
	issn = "{0021-8979}",
	times-cited = "{3}",
	unique-id = "{ISI:000262605800031}"
}

V Holy, J Stangl, R T Lechner and G Springholz. X-ray scattering from periodic arrays of quantum dots. JOURNAL OF PHYSICS-CONDENSED MATTER 20(45), 2008. 15th International Winterschool on New Developments in Solid State Physics, Bad Hofgastein, GERMANY, FEB 18-22, 2008. BibTeX

@article{ ISI:000260311900021,
	author = "Holy, V. and Stangl, J. and Lechner, R. T. and Springholz, G.",
	title = "{X-ray scattering from periodic arrays of quantum dots}",
	journal = "{JOURNAL OF PHYSICS-CONDENSED MATTER}",
	year = "{2008}",
	volume = "{20}",
	number = "{45}",
	month = "{NOV 12}",
	note = "{15th International Winterschool on New Developments in Solid State Physics, Bad Hofgastein, GERMANY, FEB 18-22, 2008}",
	abstract = "{Three-dimensional periodic arrays of self-organized quantum dots in semiconductor multilayers are investigated by high-resolution x-ray scattering. We demonstrate that the statistical parameters of the dot array can be determined directly from the scattering data without performing a numerical simulation of the scattered intensity.}",
	doi = "{10.1088/0953-8984/20/45/454215}",
	article-number = "{454215}",
	issn = "{0953-8984}",
	times-cited = "{0}",
	unique-id = "{ISI:000260311900021}"
}

V Holy, R T Lechner, S Ahlers, L Horyk, T H Metzger, A Navarro-Quezada, A Trampert, D Bougeard and G Bauer. Diffuse x-ray scattering from inclusions in ferromagnetic Ge1-xMnx layers. PHYSICAL REVIEW B 78(14), Říjen 2008. BibTeX

@article{ ISI:000260574300042,
	author = "Holy, V. and Lechner, R. T. and Ahlers, S. and Horyk, L. and Metzger, T. H. and Navarro-Quezada, A. and Trampert, A. and Bougeard, D. and Bauer, G.",
	title = "{Diffuse x-ray scattering from inclusions in ferromagnetic Ge1-xMnx layers}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{2008}",
	volume = "{78}",
	number = "{14}",
	month = "{OCT}",
	abstract = "{Magnetic properties of Ge1-xMnx epitaxial layers with a Mn content of a few percents are substantially influenced by inhomogeneities in the distribution of Mn atoms in the Ge lattice. Depending on the substrate temperature during molecular-beam epitaxial fabrication, apparently cubic, coherent Mn-rich clusters or incoherent precipitates consisting of the hexagonal, intermetallic Mn5Ge3 phase can occur in a defect free, diamond lattice Ge matrix. In this work, we apply synchrotron x-ray diffraction in grazing-incidence geometry to probe the diffuse scattered intensity of the distorted Ge host lattice. Based on a theoretical description of the scattered intensity we derive quantitative information on the lattice mismatch between the Mn inclusions and the Ge lattice, as well as on the average size of the inclusions and the average Mn content within the inclusions.}",
	doi = "{10.1103/PhysRevB.78.144401}",
	article-number = "{144401}",
	issn = "{1098-0121}",
	times-cited = "{12}",
	unique-id = "{ISI:000260574300042}"
}

V Holy, K Mundboth, C Mokuta, T H Metzger, J Stangl, G Bauer, T Boeck and M Schmidbauer. Structural characterization of self-assembled semiconductor islands by three-dimensional X-ray diffraction mapping in reciprocal space. THIN SOLID FILMS 516(22):8022-8028, 2008. BibTeX

@article{ ISI:000260360700012,
	author = "Holy, V. and Mundboth, K. and Mokuta, C. and Metzger, T. H. and Stangl, J. and Bauer, G. and Boeck, T. and Schmidbauer, M.",
	title = "{Structural characterization of self-assembled semiconductor islands by three-dimensional X-ray diffraction mapping in reciprocal space}",
	journal = "{THIN SOLID FILMS}",
	year = "{2008}",
	volume = "{516}",
	number = "{22}",
	pages = "{8022-8028}",
	month = "{SEP 30}",
	abstract = "{For the first time self-organized epitaxially grown semiconductor islands were investigated by a full three-dimensional mapping of the scattered X-ray intensity in reciprocal space. Intensity distributions were measured in a coplanar diffraction geometry around symmetric and asymmetric Bragg reflections. The 3D intensity maps were compared with theoretical simulations based on continuum-elasticity simulations of internal strains in the islands and on kinematical scattering theory whereby local chemical composition and strain profiles of the islands were retrieved. (C) 2008 Published by Elsevier B.V.}",
	doi = "{10.1016/j.tsf.2008.04.009}",
	issn = "{0040-6090}",
	times-cited = "{1}",
	unique-id = "{ISI:000260360700012}"
}

A Bonanni, A Navarro-Quezada, Tian Li, M Wegscheider, Z Matej, V Holy, R T Lechner, G Bauer, M Rovezzi, F D'Acapito, M Kiecana, M Sawicki and T Dietl. Controlled aggregation of magnetic ions in a semiconductor: An experimental demonstration. PHYSICAL REVIEW LETTERS 101(13), 2008. BibTeX

@article{ ISI:000259680600039,
	author = "Bonanni, A. and Navarro-Quezada, A. and Li, Tian and Wegscheider, M. and Matej, Z. and Holy, V. and Lechner, R. T. and Bauer, G. and Rovezzi, M. and D'Acapito, F. and Kiecana, M. and Sawicki, M. and Dietl, T.",
	title = "{Controlled aggregation of magnetic ions in a semiconductor: An experimental demonstration}",
	journal = "{PHYSICAL REVIEW LETTERS}",
	year = "{2008}",
	volume = "{101}",
	number = "{13}",
	month = "{SEP 26}",
	abstract = "{The control on the distribution of magnetic ions into a semiconducting host is crucial for the functionality of magnetically doped semiconductors. Through a structural analysis at the nanoscale, we give experimental evidence that the aggregation of Fe ions in (Ga,Fe)N and consequently the magnetic response of the material are affected by the growth rate and doping with shallow impurities.}",
	doi = "{10.1103/PhysRevLett.101.135502}",
	article-number = "{135502}",
	issn = "{0031-9007}",
	researcherid-numbers = "{Rovezzi, Mauro/G-1104-2010 Bonanni, Alberta/C-1411-2008}",
	times-cited = "{50}",
	unique-id = "{ISI:000259680600039}"
}

S Danis, V Holy, J Stangl and G Bauer. Use X-ray scattering from graded SiGe/Si layers. EPL 82(6), Červen 2008. BibTeX

@article{ ISI:000258785400018,
	author = "Danis, S. and Holy, V. and Stangl, J. and Bauer, G.",
	title = "{Use X-ray scattering from graded SiGe/Si layers}",
	journal = "{EPL}",
	year = "{2008}",
	volume = "{82}",
	number = "{6}",
	month = "{JUN}",
	abstract = "{We present a method for the determination of the density profile of misfit dislocations in graded SiGe layers based on high-resolution X-ray diffraction and simulation of diffuse X-ray scattering from misfit dislocations. From the density pro. le of misfit dislocations both the pro. le of local plastic relaxation and the pro. le of the Ge content were determined; the latter compares very well with the results of depth-resolved secondary-ion mass analysis. Copyright (C) EPLA, 2008.}",
	doi = "{10.1209/0295-5075/82/66004}",
	article-number = "{66004}",
	issn = "{0295-5075}",
	times-cited = "{4}",
	unique-id = "{ISI:000258785400018}"
}

D Luebbert, T Baumbach, V Holy, P Mikulik, L Helfen, P Pernot, M Elyyan, S Keller, T M Katona, S P DenBaars and J S Speck. Microdiffraction imaging of dislocation densities in microstructured samples. EPL 82(5), Červen 2008. BibTeX

@article{ ISI:000256301100016,
	author = "Luebbert, D. and Baumbach, T. and Holy, V. and Mikulik, P. and Helfen, L. and Pernot, P. and Elyyan, M. and Keller, S. and Katona, T. M. and DenBaars, S. P. and Speck, J. S.",
	title = "{Microdiffraction imaging of dislocation densities in microstructured samples}",
	journal = "{EPL}",
	year = "{2008}",
	volume = "{82}",
	number = "{5}",
	month = "{JUN}",
	abstract = "{A full field X-ray microdiffraction technique is developed providing simultaneously both micrometer-resolved information of crystalline perfection as well as statistical information about the macroscopically illuminated sample. The method allows a detailed characterization of patterned substrates grown by epitaxial lateral overgrowth. Local wing tilts and their fluctuation over the sample area as well as the local and average number of grains in the wings are determined, and the reduction of threading dislocation densities in the grains of the ELO wings can be quantitatively estimated. Copyright (c) EPLA, 2008.}",
	doi = "{10.1209/0295-5075/82/56002}",
	article-number = "{56002}",
	issn = "{0295-5075}",
	researcherid-numbers = "{Speck, James/H-5646-2011 Mikulik, Petr/E-1791-2012}",
	times-cited = "{1}",
	unique-id = "{ISI:000256301100016}"
}

V Holy, T Baumbach, D Luebbert, L Helfen, M Ellyan, P Mikulik, S Keller, S P DenBaars and J Speck. Diffuse x-ray scattering from statistically inhomogeneous distributions of threading dislocations beyond the ergodic hypothesis. PHYSICAL REVIEW B 77(9), Březen 2008. BibTeX

@article{ ISI:000254542500034,
	author = "Holy, V. and Baumbach, T. and Luebbert, D. and Helfen, L. and Ellyan, M. and Mikulik, P. and Keller, S. and DenBaars, S. P. and Speck, J.",
	title = "{Diffuse x-ray scattering from statistically inhomogeneous distributions of threading dislocations beyond the ergodic hypothesis}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{2008}",
	volume = "{77}",
	number = "{9}",
	month = "{MAR}",
	abstract = "{Diffuse x- ray scattering from threading dislocations in epitaxial structures is simulated numerically by a Monte Carlo method. The method allows one to simulate diffraction curves for dislocation types, where macroscopic approaches fail. That includes dislocation types for which analytical ensemble averaging is not feasible as well as microdiffraction curves from small sample volumes. In the latter case, the degree of statistic fluctuation of characteristic features is determined. The Monte Carlo method makes it possible to correlate quantitatively the widths of the microdiffraction curves to the densities of various dislocation types. The potential of the method has been demonstrated by a quantitative estimation of the density distribution of edge and screw threading dislocations in laterally overgrown epitaxial GaN structures, which is investigated by a full- field microdiffraction imaging technique. Measuring the asymptotic behavior of the microdiffraction curves allows one to conclude on the prevailing type of threading dislocations.}",
	doi = "{10.1103/PhysRevB.77.094102}",
	article-number = "{094102}",
	issn = "{1098-0121}",
	researcherid-numbers = "{Speck, James/H-5646-2011 Mikulik, Petr/E-1791-2012}",
	times-cited = "{8}",
	unique-id = "{ISI:000254542500034}"
}

Vaclav Holy and Paul F Fewster. Crystal truncation rod X-ray scattering: exact dynamical calculation. JOURNAL OF APPLIED CRYSTALLOGRAPHY 41(Part 1):18-26, Únor 2008. BibTeX

@article{ ISI:000253719400003,
	author = "Holy, Vaclav and Fewster, Paul F.",
	title = "{Crystal truncation rod X-ray scattering: exact dynamical calculation}",
	journal = "{JOURNAL OF APPLIED CRYSTALLOGRAPHY}",
	year = "{2008}",
	volume = "{41}",
	number = "{Part 1}",
	pages = "{18-26}",
	month = "{FEB}",
	abstract = "{A new method is presented for a calculation of the reciprocal-space distribution of X-ray diffracted intensity along a crystal truncation rod. In contrast to usual kinematical or dynamical approaches, the method is correct both in the reciprocal-lattice points and between them. In the method, the crystal is divided into a sequence of very thin slabs parallel to the surface; in contrast to the well known Darwin dynamical theory, the electron density in the slabs is constant along the surface normal. The diffracted intensity is calculated by a matrix formalism based on the Fresnel reflection and transmission coefficients. The method is applicable for any polarization of the primary beam and also in a non-coplanar scattering geometry.}",
	doi = "{10.1107/S0021889807049886}",
	issn = "{0021-8898}",
	times-cited = "{2}",
	unique-id = "{ISI:000253719400003}"
}

J Krcmar, V Holy, L Horak, T H Metzger and J Sobota. Standing-wave effects in grazing-incidence x-ray diffraction from polycrystalline multilayers. JOURNAL OF APPLIED PHYSICS 103(3), 2008. BibTeX

@article{ ISI:000253238100017,
	author = "Krcmar, J. and Holy, V. and Horak, L. and Metzger, T. H. and Sobota, J.",
	title = "{Standing-wave effects in grazing-incidence x-ray diffraction from polycrystalline multilayers}",
	journal = "{JOURNAL OF APPLIED PHYSICS}",
	year = "{2008}",
	volume = "{103}",
	number = "{3}",
	month = "{FEB 1}",
	abstract = "{The intensity of x-ray diffraction from a polycrystalline multilayer in a grazing-incidence scattering geometry is modulated by a standing wave created by the interference of the radiation transmitted through the multilayer stack with the wave field specularly reflected from the superlattice interfaces. Similarly, the radiation being diffracted from the polycrystalline structure is reflected specularly from the interfaces and a standing-wave interference pattern results as well. This effect is demonstrated by a series of diffraction measurements on C/Ni periodic multilayers; the experimental data have been modeled using the distorted-wave Born approximation and a very good correspondence with the experiments was achieved. The method was used for the study of the profiles of the crystallite sizes and strains in multilayers. (c) 2008 American Institute of Physics.}",
	doi = "{10.1063/1.2836974}",
	article-number = "{033504}",
	issn = "{0021-8979}",
	researcherid-numbers = "{Sobota, Jaroslav/D-5192-2012}",
	times-cited = "{1}",
	unique-id = "{ISI:000253238100017}"
}

M -I Richard, T H Metzger, V Holy and K Nordlund. Defect cores investigated by x-ray scattering close to forbidden reflections in silicon. PHYSICAL REVIEW LETTERS 99(22), 2007. BibTeX

@article{ ISI:000251327500034,
	author = "Richard, M. -I. and Metzger, T. H. and Holy, V. and Nordlund, K.",
	title = "{Defect cores investigated by x-ray scattering close to forbidden reflections in silicon}",
	journal = "{PHYSICAL REVIEW LETTERS}",
	year = "{2007}",
	volume = "{99}",
	number = "{22}",
	month = "{NOV 30}",
	abstract = "{A new x-ray scattering method is presented making possible the detection of defects and the investigation of the structure of their cores. The method uses diffuse x-ray scattering measured close to a forbidden diffraction peak, in which the intensity scattered from the distorted crystal lattice around the defects is minimized. As a first example of this nondestructive method we demonstrate how the local compression of the extra \{111\} double planes in extrinsic stacking faults in Si can be probed and quantified using a continuum approach for the simulation of the displacements. The results of the theory developed are found to be in very good agreement with atomistic simulations and experiments.}",
	doi = "{10.1103/PhysRevLett.99.225504}",
	article-number = "{225504}",
	issn = "{0031-9007}",
	researcherid-numbers = "{Richard, Marie-Ingrid/F-6693-2012}",
	times-cited = "{12}",
	unique-id = "{ISI:000251327500034}"
}

Detlev Gruetzmacher, Thomas Fromherz, Christian Dais, Julian Stangl, Elisabeth Mueller, Yasin Ekinci, Harun H Solak, Hans Sigg, Rainer T Lechner, Eugen Wintersberger, Stefan Birner, Vaclav Holy and Guenther Bauer. Three-dimensional Si/Ge quantum dot crystals. NANO LETTERS 7(10):3150-3156, Říjen 2007. BibTeX

@article{ ISI:000250143400038,
	author = "Gruetzmacher, Detlev and Fromherz, Thomas and Dais, Christian and Stangl, Julian and Mueller, Elisabeth and Ekinci, Yasin and Solak, Harun H. and Sigg, Hans and Lechner, Rainer T. and Wintersberger, Eugen and Birner, Stefan and Holy, Vaclav and Bauer, Guenther",
	title = "{Three-dimensional Si/Ge quantum dot crystals}",
	journal = "{NANO LETTERS}",
	year = "{2007}",
	volume = "{7}",
	number = "{10}",
	pages = "{3150-3156}",
	month = "{OCT}",
	abstract = "{Modern nanotechnology offers routes to create new artificial materials, widening the functionality of devices in physics, chemistry, and biology. Templated self-organization has been recognized as a possible route to achieve exact positioning of quantum dots to create quantum dot arrays, molecules, and crystals. Here we employ extreme ultraviolet interference lithography (EUV-IL) at a wavelength of lambda = 13.5 nm for fast, large-area exposure of templates with perfect periodicity. Si(001) substrates have been patterned with two-dimensional hole arrays using EUV-IL and reactive ion etching. On these substrates, three-dimensionally ordered SiGe quantum dot crystals with the so far smallest quantum dot sizes and periods both in lateral and vertical directions have been grown by molecular beam epitaxy. X-ray diffractometry from a sample volume corresponding to about 3.6 x 10(7) dots and atomic force microscopy (AFM) reveal an up to now unmatched structural perfection of the quantum dot crystal and a narrow quantum dot size distribution. Intense interband photoluminescence has been observed up to room temperature, indicating a low defect density in the three-dimensional (31)) SiGe quantum dot crystals. Using the Ge concentration and dot shapes determined by X-ray and AFM measurements as input parameters for 3D band structure calculations, an excellent quantitative agreement between measured and calculated PL energies is obtained. The calculations show that the band structure of the 3D ordered quantum dot crystal is significantly modified by the artificial periodicity. A calculation of the variation of the eigenenergies based on the statistical variation in the dot dimensions as determined experimentally (+/-10\% in linear dimensions) shows that the calculated electronic coupling between neighboring dots is not destroyed due to the quantum dot size variations. Thus, not only from a structural point of view but also with respect to the band structure, the 3D ordered quantum dots can be regarded as artificial crystal.}",
	doi = "{10.1021/nl0717199}",
	issn = "{1530-6984}",
	researcherid-numbers = "{Ekinci, Yasin/B-6232-2008 Sigg, Hans/B-4323-2013}",
	times-cited = "{72}",
	unique-id = "{ISI:000250143400038}"
}

J Wunderlich, A C Irvine, J Zemen, V Holy, A W Rushforth, E De Ranieri, U Rana, K Vyborny, Jairo Sinova, C T Foxon, R P Campion, D A Williams, B L Gallagher and T Jungwirth. Local control of magnetocrystalline anisotropy in (Ga,Mn)As microdevices: Demonstration in current-induced switching. PHYSICAL REVIEW B 76(5), Srpen 2007. BibTeX

@article{ ISI:000249155100095,
	author = "Wunderlich, J. and Irvine, A. C. and Zemen, J. and Holy, V. and Rushforth, A. W. and De Ranieri, E. and Rana, U. and Vyborny, K. and Sinova, Jairo and Foxon, C. T. and Campion, R. P. and Williams, D. A. and Gallagher, B. L. and Jungwirth, T.",
	title = "{Local control of magnetocrystalline anisotropy in (Ga,Mn)As microdevices: Demonstration in current-induced switching}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{2007}",
	volume = "{76}",
	number = "{5}",
	month = "{AUG}",
	abstract = "{The large saturation magnetization in conventional dense moment ferromagnets offers a flexible means of manipulating the ordered state through demagnetizing shape anisotropy fields, but these dipolar fields, in turn, limit the integrability of magnetic elements in information storage devices. We show that in a (Ga,Mn)As dilute-moment ferromagnet, with comparatively weaker magnetic dipole interactions, locally tunable magnetocrystalline anisotropy can take the role of the internal field which determines the magnetic configuration. Experiments and theoretical modeling are presented for lithographically patterned microchannels, and the phenomenon is attributed to lattice relaxations across the channels. The utility of locally controlled magnetic anisotropies is demonstrated in current-induced switching experiments. We report structure sensitive, current-induced in-plane magnetization switchings well below the Curie temperature at critical current densities similar to 10(5) A cm(-2). The observed phenomenology shows signatures of a contribution from domain-wall spin-transfer-torque effects.}",
	doi = "{10.1103/PhysRevE.054424}",
	article-number = "{054424}",
	issn = "{1098-0121}",
	researcherid-numbers = "{Irvine, Andrew/B-2197-2009}",
	times-cited = "{40}",
	unique-id = "{ISI:000249155100095}"
}

A Malachias, T H Metzger, M Stoffel, O G Schmidt and V Holy. Composition and atomic ordering of Ge/Si(001) wetting layers. THIN SOLID FILMS 515(14):5587-5592, 2007. 9th International Conference on Surface X-Ray and Neutton Scattering, Taipei, TAIWAN, JUL 16-20, 2006. BibTeX

@article{ ISI:000246548300012,
	author = "Malachias, A. and Metzger, T. H. and Stoffel, M. and Schmidt, O. G. and Holy, V.",
	title = "{Composition and atomic ordering of Ge/Si(001) wetting layers}",
	journal = "{THIN SOLID FILMS}",
	year = "{2007}",
	volume = "{515}",
	number = "{14}",
	pages = "{5587-5592}",
	month = "{MAY 23}",
	note = "{9th International Conference on Surface X-Ray and Neutton Scattering, Taipei, TAIWAN, JUL 16-20, 2006}",
	abstract = "{A combination of X-ray diffraction with anomalous X-ray scattering at the Ge K edge and specular reflectivity measurements is used to reveal both composition and atomic ordering in Ge:Si wetting layers. By comparing the intensity distribution close to the (400) and (200) surface reflections we show that the Ge wetting layer is composed of a SiGe alloy which exhibits atomic ordering. Due to the Si interdiffusion the wetting layer thickness is larger than the nominal 3 ML Ge deposition. The chemical depth distribution is obtained from X-ray reflectivity measurements and confirms the enhanced Ge interdiffusion. These phenomena evidence the crucial interplay between surface kinetics and intermixing in SiGe thin films and nanostructures on Si(001) substrates. (c) 2006 Elsevier B.V. All rights reserved.}",
	doi = "{10.1016/j.tsf.2006.12.021}",
	issn = "{0040-6090}",
	researcherid-numbers = "{Malachias, Angelo/A-1667-2008}",
	times-cited = "{5}",
	unique-id = "{ISI:000246548300012}"
}

M Meduna, J Novak, G Bauer, V Holy, C V Falub, S Tsujino and D Gruetzmacher. In situ investigations of Si and Ge interdiffusion in Ge-rich Si/SiGe multilayers using x-ray scattering. SEMICONDUCTOR SCIENCE AND TECHNOLOGY 22(4):447-453, Duben 2007. BibTeX

@article{ ISI:000246104100026,
	author = "Meduna, M. and Novak, J. and Bauer, G. and Holy, V. and Falub, C. V. and Tsujino, S. and Gruetzmacher, D.",
	title = "{In situ investigations of Si and Ge interdiffusion in Ge-rich Si/SiGe multilayers using x-ray scattering}",
	journal = "{SEMICONDUCTOR SCIENCE AND TECHNOLOGY}",
	year = "{2007}",
	volume = "{22}",
	number = "{4}",
	pages = "{447-453}",
	month = "{APR}",
	abstract = "{We have explored the thermal stability of strain compensated Si/SiGe(80\%) multilayers grown pseudomorphically by molecular beam epitaxy on relaxed SiGe(50\%) pseudosubstrates. The structures were annealed in situ and investigated using x-ray reflectivity and diffraction techniques at temperatures of about 800 degrees C. From fitting of the reflectivity and diffraction profiles at various annealing time, we extracted interdiffusion coefficients of the structure for several annealing temperatures. The activation energy and the pre-exponential factor of the interdiffusion coefficient in SiGe( 50\%) was obtained from the Arrhenius-like temperature dependence of interdiffusion coefficients. Our results confirm that the interdiffusion pre-exponential factor decreases exponentially with increasing Ge content and the activation energy decreases linearly for Ge contents from 0 up to 50\%.}",
	doi = "{10.1088/0268-1242/22/4/026}",
	issn = "{0268-1242}",
	researcherid-numbers = "{Meduna, Mojmir/E-2474-2012}",
	times-cited = "{13}",
	unique-id = "{ISI:000246104100026}"
}

G Springholz, L Abtin and V Holy. Shape and composition of buried PbSe quantum dots determined by scanning tunneling microscopy. APPLIED PHYSICS LETTERS 90(11), 2007. BibTeX

@article{ ISI:000244959200091,
	author = "Springholz, G. and Abtin, L. and Holy, V.",
	title = "{Shape and composition of buried PbSe quantum dots determined by scanning tunneling microscopy}",
	journal = "{APPLIED PHYSICS LETTERS}",
	year = "{2007}",
	volume = "{90}",
	number = "{11}",
	month = "{MAR 12}",
	abstract = "{Capping of self-assembled semiconductor quantum dots usually alters their shape and composition due to alloying with the matrix material. To determine the structure of capped dots, a method is developed based on the analysis of surface displacements induced by buried dots measured by scanning tunneling microscopy. For self-assembled PbSe dots overgrown with PbTe layers, the buried dots are found to be highly truncated and extended in the lateral direction, and due to intermixing their composition is changed to PbSexTe1-x, with x(Se) of only 55\%. (c) 2007 American Institute of Physics.}",
	doi = "{10.1063/1.2713361}",
	article-number = "{113119}",
	issn = "{0003-6951}",
	times-cited = "{5}",
	unique-id = "{ISI:000244959200091}"
}

E Piskorska, V Holy, M Siebert, H Renevier, T Schmidt, J Falta, T Yamaguchi and D Hommel. InGaN selfassembled quantum dots investigated by x-ray diffraction-anomalous-fine structure technique. In W Jantsch and F Schaffler (eds.). Physics of Semiconductors, Pts A and B 893. 2007, 79-80. 28th International Conference on the Physics of Semiconductors (ICPS-28), Vienna, AUSTRIA, JUL 24-28, 2006. BibTeX

@inproceedings{ ISI:000246281800039,
	author = "Piskorska, E. and Holy, V. and Siebert, M. and Renevier, H. and Schmidt, T. and Falta, J. and Yamaguchi, T. and Hommel, D.",
	editor = "{Jantsch, W and Schaffler, F}",
	title = "{InGaN selfassembled quantum dots investigated by x-ray diffraction-anomalous-fine structure technique}",
	booktitle = "{Physics of Semiconductors, Pts A and B}",
	series = "{AIP CONFERENCE PROCEEDINGS}",
	year = "{2007}",
	volume = "{893}",
	pages = "{79-80}",
	note = "{28th International Conference on the Physics of Semiconductors (ICPS-28), Vienna, AUSTRIA, JUL 24-28, 2006}",
	organization = "{Austrian Res Ctr; Infineon; Austrian Fed Minist Educ, Sci \& Culture; FFG; Austrian Nano Initiat; Vienna Convent Bur; ICPS 27; Marabun Res; Raith; Int Union Pure \& Appl Phys; NMA Networking; Austrian Soc Micro \& Nanoelect; Austrian Airlines; Inst Phys; Austriamicrosystems; Agilent Technologies; NIST; LOT ORIEL; Panasonic; ONR Off Naval Res; Volkswagen; USAF Off Sci Res, European Off Aerosp Res \& Dev, USAF Res Lab; Darpa}",
	abstract = "{Local chemical composition of InGaN quantum dots grown by molecular-beam epitaxy on GaN virtual substrates was investigated by x-ray diffraction anomalous fine-structure method. Using this approach, we found that the In content increases from 20\% at the dot base to 40-50\% at the top. From the detailed numerical analysis of the data we were able to reconstruct the local neighborhood of Ga atoms in different positions in the dots, as well as the local elastic relaxation state.}",
	issn = "{0094-243X}",
	isbn = "{978-0-7354-0397-0}",
	times-cited = "{1}",
	unique-id = "{ISI:000246281800039}"
}

Kamil Olejnik, Vit Novak, Miroslav Cukr, Oliva Pacherova, Zdenek Matej, Vaclav Holy and Miroslav Marysko. GaMnAs annealing under various conditions: air vs. As cap. In W Jantsch and F Schaffler (eds.). Physics of Semiconductors, Pts A and B 893. 2007, 1219-1220. 28th International Conference on the Physics of Semiconductors (ICPS-28), Vienna, AUSTRIA, JUL 24-28, 2006. BibTeX

@inproceedings{ ISI:000246281800598,
	author = "Olejnik, Kamil and Novak, Vit and Cukr, Miroslav and Pacherova, Oliva and Matej, Zdenek and Holy, Vaclav and Marysko, Miroslav",
	editor = "{Jantsch, W and Schaffler, F}",
	title = "{GaMnAs annealing under various conditions: air vs. As cap}",
	booktitle = "{Physics of Semiconductors, Pts A and B}",
	series = "{AIP CONFERENCE PROCEEDINGS}",
	year = "{2007}",
	volume = "{893}",
	pages = "{1219-1220}",
	note = "{28th International Conference on the Physics of Semiconductors (ICPS-28), Vienna, AUSTRIA, JUL 24-28, 2006}",
	organization = "{Austrian Res Ctr; Infineon; Austrian Fed Minist Educ, Sci \& Culture; FFG; Austrian Nano Initiat; Vienna Convent Bur; ICPS 27; Marabun Res; Raith; Int Union Pure \& Appl Phys; NMA Networking; Austrian Soc Micro \& Nanoelect; Austrian Airlines; Inst Phys; Austriamicrosystems; Agilent Technologies; NIST; LOT ORIEL; Panasonic; ONR Off Naval Res; Volkswagen; USAF Off Sci Res, European Off Aerosp Res \& Dev, USAF Res Lab; Darpa}",
	abstract = "{The presence of As-capping layer on GaMnAs sample during its post-growth annealing is shown to affect the annealing kinetics: it accelerates the increase of the Curie temperature and conductivity. The effect is explained in terms of an enhanced surface recombination of the Mn interstitial atoms, and simulated by a one-dimensional numerical model.}",
	issn = "{0094-243X}",
	isbn = "{978-0-7354-0397-0}",
	researcherid-numbers = "{Olejnik, Kamil/I-7085-2012}",
	times-cited = "{2}",
	unique-id = "{ISI:000246281800598}"
}

L Abtin, G Springholz and V Holy. Surface exchange and shape transitions of PbSe quantum dots during overgrowth. PHYSICAL REVIEW LETTERS 97(26), 2006. BibTeX

@article{ ISI:000243167300026,
	author = "Abtin, L. and Springholz, G. and Holy, V.",
	title = "{Surface exchange and shape transitions of PbSe quantum dots during overgrowth}",
	journal = "{PHYSICAL REVIEW LETTERS}",
	year = "{2006}",
	volume = "{97}",
	number = "{26}",
	month = "{DEC 31}",
	abstract = "{Epitaxial overgrowth of PbSe quantum dots is shown to drastically affect their shape and composition due to anion exchange reactions. As shown by scanning tunneling microscopy, for PbTe capping layers this results in a complete truncation of the dots. Introduction of EuTe into the cap layer leads to an effective suppression of the anion exchange process. This preserves the original dot pyramids and induces a large stress concentration on the surface which further alters the overgrowth process.}",
	doi = "{10.1103/PhysRevLett.97.266103}",
	article-number = "{266103}",
	issn = "{0031-9007}",
	times-cited = "{10}",
	unique-id = "{ISI:000243167300026}"
}

V Holy, Z Matej, O Pacherova, V Novak, M Cukr, K Olejnik and T Jungwirth. Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave fluorescence. PHYSICAL REVIEW B 74(24), Prosinec 2006. BibTeX

@article{ ISI:000243195800048,
	author = "Holy, V. and Matej, Z. and Pacherova, O. and Novak, V. and Cukr, M. and Olejnik, K. and Jungwirth, T.",
	title = "{Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave fluorescence}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{2006}",
	volume = "{74}",
	number = "{24}",
	month = "{DEC}",
	abstract = "{A combination of high-resolution x-ray diffraction and a technique of x-ray standing-wave fluorescence at grazing incidence is employed to study the structure of a (Ga,Mn)As-diluted magnetic semiconductor and its changes during post-growth annealing steps. We find that the film is formed by a uniform, single-crystallographic phase epilayer covered by a thin surface layer with enhanced Mn concentration to Mn atoms at random noncrystallographic positions. In the epilayer, Mn incorporated at the interstitial position has a dominant effect on lattice expansion as compared to substitutional Mn. The expansion coefficient of interstitial Mn estimated from our data is consistent with theory predictions. The concentration of interstitial Mn and the corresponding lattice expansion of the epilayer are reduced by annealing, accompanied by an increase of the density of randomly distributed Mn atoms in the disordered surface layer. Substitutional Mn atoms remain stable during the low-temperature annealing.}",
	doi = "{10.1103/PhysRevB.74.245205}",
	article-number = "{245205}",
	issn = "{1098-0121}",
	researcherid-numbers = "{Olejnik, Kamil/I-7085-2012}",
	times-cited = "{11}",
	unique-id = "{ISI:000243195800048}"
}

V Holy, T U Schulli, R T Lechner, G Springholz and G Bauer. Changes in the shapes of self-organized PbSe quantum dots during PbEuTe overgrowth investigated by anomalous X-ray diffraction. APPLIED SURFACE SCIENCE 253(1):177-181, 2006. Symposium P of the Spring Meeting of the European-Materials-Research-Society entitled Curent Trends in Optical and X-ray Meterology of Advanced Materials for Nanoscale Devices, Strasbourg, FRANCE, MAY 31-JUN 03, 2005. BibTeX

@article{ ISI:000242317500031,
	author = "Holy, V. and Schulli, T. U. and Lechner, R. T. and Springholz, G. and Bauer, G.",
	title = "{Changes in the shapes of self-organized PbSe quantum dots during PbEuTe overgrowth investigated by anomalous X-ray diffraction}",
	journal = "{APPLIED SURFACE SCIENCE}",
	year = "{2006}",
	volume = "{253}",
	number = "{1}",
	pages = "{177-181}",
	month = "{OCT 31}",
	note = "{Symposium P of the Spring Meeting of the European-Materials-Research-Society entitled Curent Trends in Optical and X-ray Meterology of Advanced Materials for Nanoscale Devices, Strasbourg, FRANCE, MAY 31-JUN 03, 2005}",
	abstract = "{Anomalous X-ray diffraction was used for the investigation of shape and chemical composition of self-organized PbSe quantum dots covered by PbEuTe capping layers. From reciprocal-space maps of diffracted intensities measured at two energies of the primary radiation, we discriminated the contributions of the dot volumes and the surrounding crystal lattice to the diffracted intensity. We have found that the presence of Eu atoms suppresses the flattening of the dots during their overgrowth. (c) 2006 Published by Elsevier B.V.}",
	doi = "{10.1016/j.apsusc.2006.05.103}",
	issn = "{0169-4332}",
	times-cited = "{0}",
	unique-id = "{ISI:000242317500031}"
}

L Capello, T H Metzger, V Holy, M Servidori and A Malachias. Structural properties of ultra-low-energy ion-implanted silicon studied by combined X-ray scattering methods. JOURNAL OF APPLIED CRYSTALLOGRAPHY 39(Part 4):571-581, Srpen 2006. BibTeX

@article{ ISI:000239147800013,
	author = "Capello, L. and Metzger, T. H. and Holy, V. and Servidori, M. and Malachias, A.",
	title = "{Structural properties of ultra-low-energy ion-implanted silicon studied by combined X-ray scattering methods}",
	journal = "{JOURNAL OF APPLIED CRYSTALLOGRAPHY}",
	year = "{2006}",
	volume = "{39}",
	number = "{Part 4}",
	pages = "{571-581}",
	month = "{AUG}",
	abstract = "{The use of a combination of X-ray scattering techniques for the complete characterization of ultra-low-energy ( E < 5 keV) implanted Si is discussed. Grazing incidence diffuse X-ray scattering (GI-DXS) reveals the properties of the defects confined within thin crystalline layers with depth resolution. Due to the weak diffuse intensity arising from such defects, the high brilliance of synchrotron radiation is required. GI-DXS proved to be particularly well suited for the investigation of the so-called `end-of-range' defects. In a complementary way, X-ray diffraction (XRD) in the vicinity of the 004 Bragg reflection is sensitive to the distribution of the strain in the Si lattice in the direction perpendicular to the sample surface. The structural characterization is complemented by the electron density profile of the near-surface amorphous region provided by specular reflectivity (SR). It will be shown that only by merging the results obtained with GI-DXS, XRD and SR, is it possible to obtain the detailed structural characterization of the implanted Si samples.}",
	doi = "{10.1107/S0021889806018917}",
	issn = "{0021-8898}",
	researcherid-numbers = "{Malachias, Angelo/A-1667-2008}",
	times-cited = "{4}",
	unique-id = "{ISI:000239147800013}"
}

Y Chushkin, L Chitu, Y Halahovets, S Luby, E Majkova, A Satka, G Leo, M Giersig, M Hilgendorff, V Holy and O Konovalov. GISAXS studies of self-assembling of colloidal Co nanoparticles. MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS 26(5-7, SI):1136-1140, Červenec 2006. Meeting of the European-Materials-Research-Society, Strasbourg, FRANCE, MAY 30-JUN 03, 2005. BibTeX

@article{ ISI:000238474700082,
	author = "Chushkin, Y. and Chitu, L. and Halahovets, Y. and Luby, S. and Majkova, E. and Satka, A. and Leo, G. and Giersig, M. and Hilgendorff, M. and Holy, V. and Konovalov, O.",
	title = "{GISAXS studies of self-assembling of colloidal Co nanoparticles}",
	journal = "{MATERIALS SCIENCE \& ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS}",
	year = "{2006}",
	volume = "{26}",
	number = "{5-7, SI}",
	pages = "{1136-1140}",
	month = "{JUL}",
	note = "{Meeting of the European-Materials-Research-Society, Strasbourg, FRANCE, MAY 30-JUN 03, 2005}",
	organization = "{European Mat Res Soc}",
	abstract = "{In this work we report on the formation of ordered monolayers (2-D) and arrays of rods (3-D) of magnetic Co nanoparticles in magnetic field perpendicular to the substrate surface. Samples were prepared by drying a droplet of colloidal solution of Co nanoparticles (10 nm diameter) on Si/Si3N4 substrates in magnetic field between 0.2 and 0.9 T. The samples were characterized by high resolution scanning electron microscopy (SEM), atomic and magnetic force microscopy (AFM/MFM) and grazing incidence small angle X-ray scattering (GISAXS). SEM studies of monolayers show well-ordered 2-D arrays with hexagonal symmetry of 200 nm x 500 nm in size forming a mosaic structure. Rods, about 500 mn in diameter, aligned with the field direction and forming a hexagonal pattern were obtained when higher concentration of colloid and low evaporation rate of the solvent were used. The ordering of nanoparticles in the monolayer analyzed by GISAXS is described by the local order with hexagonal symmetry. The model of close packing of hard spheres is used for ordering of particles inside the rods. Magnetic features corresponding to the 3-D arrays have been observed by MFM pointing out that all magnetic moments in the rod are oriented along the field direction. (c) 2005 Elsevier B.V All rights reserved.}",
	doi = "{10.1016/j.msec.2005.09.053}",
	issn = "{0928-4931}",
	researcherid-numbers = "{Satka, Alexander/I-1564-2012 Chitu, Livia/A-7289-2013}",
	times-cited = "{10}",
	unique-id = "{ISI:000238474700082}"
}

O Caha, V Holy and KE Bassler. Nonlinear evolution of surface morphology in InAs/AlAs superlattices via surface diffusion. PHYSICAL REVIEW LETTERS 96(13), 2006. BibTeX

@article{ ISI:000236612400038,
	author = "Caha, O and Holy, V and Bassler, KE",
	title = "{Nonlinear evolution of surface morphology in InAs/AlAs superlattices via surface diffusion}",
	journal = "{PHYSICAL REVIEW LETTERS}",
	year = "{2006}",
	volume = "{96}",
	number = "{13}",
	month = "{APR 7}",
	abstract = "{Continuum simulations of self-organized lateral compositional modulation growth in InAs/AlAs short-period superlattices on InP substrate are presented. The results of the simulations correspond quantitatively to the results of synchrotron x-ray diffraction experiments. The time evolution of the compositional modulation during epitaxial growth can be explained only including a nonlinear dependence of the elastic energy of the growing epitaxial layer on its thickness. From the fit of the experimental data to the growth simulations we have determined the parameters of this nonlinear dependence. It was found that the modulation amplitude does not depend on the values of the surface diffusion constants of particular elements.}",
	doi = "{10.1103/PhysRevLett.96.136102}",
	article-number = "{136102}",
	issn = "{0031-9007}",
	researcherid-numbers = "{Caha, Ondrej/E-4716-2012}",
	times-cited = "{6}",
	unique-id = "{ISI:000236612400038}"
}

P Klang and V Holy. X-ray diffuse scattering from stacking faults in Czochralski silicon. SEMICONDUCTOR SCIENCE AND TECHNOLOGY 21(3):352-357, Březen 2006. BibTeX

@article{ ISI:000236590100027,
	author = "Klang, P and Holy, V",
	title = "{X-ray diffuse scattering from stacking faults in Czochralski silicon}",
	journal = "{SEMICONDUCTOR SCIENCE AND TECHNOLOGY}",
	year = "{2006}",
	volume = "{21}",
	number = "{3}",
	pages = "{352-357}",
	month = "{MAR}",
	abstract = "{The results of a study of stacking faults and dislocation loops in samples from Czochralski grown silicon crystal are reported. High resolution x-ray diffraction has been used to measure the reciprocal space maps of intensity distribution from the scattering on defects in silicon wafers after annealing processes. The displacement field around stacking faults and dislocation loops has been calculated using the Burgers theory of elasticity. From these calculations a reciprocal space map of x-ray diffuse scattered intensity has been simulated. The type and size of the defects can be determined from a comparison of measured with simulated maps. The type of defects has been determined from the symmetry of measured reciprocal space maps, where higher intensity streaks corresponding to planar defects in \{111\} planes have been observed. Using the width of these higher intensity streaks and comparing measured and simulated maps, the radius of stacking faults with the Burgers vector a/3{[}111] in \{111\} planes was found to be 0.3-0.5 mu m.}",
	doi = "{10.1088/0268-1242/21/3/025}",
	issn = "{0268-1242}",
	times-cited = "{5}",
	unique-id = "{ISI:000236590100027}"
}

E Majkova, Y Chushkin, M Jergel, S Luby, V Holy, I Matko, B Chenevier, L Toth, T Hatano and M Yamamoto. Nanometer-scale period Sc/Cr multilayer mirrors and their thermal stability. THIN SOLID FILMS 497(1-2):115-120, 2006. BibTeX

@article{ ISI:000234957300019,
	author = "Majkova, E and Chushkin, Y and Jergel, M and Luby, S and Holy, V and Matko, I and Chenevier, B and Toth, L and Hatano, T and Yamamoto, M",
	title = "{Nanometer-scale period Sc/Cr multilayer mirrors and their thermal stability}",
	journal = "{THIN SOLID FILMS}",
	year = "{2006}",
	volume = "{497}",
	number = "{1-2}",
	pages = "{115-120}",
	month = "{FEB 21}",
	abstract = "{Results of comprehensive characterization of Sc/Cr multilayers for soft X-ray mirrors working in the water window range (2.4-4.4 nm) are presented. Multilayer samples were prepared by ion beam sputtering with up to 250 periods in a range of 1.3- 1.75 nm. They were analyzed by transmission electron microscopy (TEM), high resolution TEM, X-ray diffractometry, specular X-ray scattering and diffuse X-ray scattering. The TEM inspection showed good periodicity of the multilayer structure. From simulation studies of the specular reflectivity and a reciprocal space map of the diffuse scattering, it follows that the effective roughness of interfaces is 0.25-0.28 nm, being equal to the geometrical roughness data. Lateral and vertical correlation lengths of the roughness are 7 and 35 nm, respectively. Heat treatment study of the Sc/Cr multilayers revealed a reasonable thermal stability. An increase of the multilayer period of 2.4\% was observed after 33 h annealing at 280 degrees C and a considerable decrease of refectivity followed above 300 degrees C annealing for 3 h, which corresponds to the low mutual miscibility between Sc and Cr. (c) 2005 Elsevier B.V. All rights reserved.}",
	doi = "{10.1016/j.tsf.2005.10.051}",
	issn = "{0040-6090}",
	times-cited = "{7}",
	unique-id = "{ISI:000234957300019}"
}

M Sztucki, TH Metzger, V Chamard, A Hesse and V Holy. Investigation of shape, strain, and interdiffusion in InGaAs quantum rings using grazing incidence x-ray diffraction. JOURNAL OF APPLIED PHYSICS 99(3), 2006. BibTeX

@article{ ISI:000235341000028,
	author = "Sztucki, M and Metzger, TH and Chamard, V and Hesse, A and Holy, V",
	title = "{Investigation of shape, strain, and interdiffusion in InGaAs quantum rings using grazing incidence x-ray diffraction}",
	journal = "{JOURNAL OF APPLIED PHYSICS}",
	year = "{2006}",
	volume = "{99}",
	number = "{3}",
	month = "{FEB 1}",
	abstract = "{The formation of nanoscopic InGaAs ring structures on a GaAs ( 001 ) substrate takes place when InAs quantum dots, grown by Stranski- Krastanov self- organization, are covered by a thin layer of GaAs. The shape transformation into rings is governed by strain, diffusion, and surface tension, physical parameters which are of importance to monitor the magneto- optical and electronic properties of the rings. In this work we report on the characterization of morphology and structure of the rings in three dimensions ( such as strain and chemical composition ). To this end we apply grazing incidence small angle x- ray scattering ( GISAXS ) and grazing incidence diffraction ( GID ). From GISAXS the shape is found to be of circular symmetry with an average outer radius of 26 nm, a height of about 1.5 nm, and a hole in the middle, in good agreement with atomic force microscopy measurements. Information about strain and interdiffusion is derived from intensity mappings in reciprocal space close to the ( 220 ) and ( 220 ) reflections done in the surface sensitive GID geometry. From a comparison of the intensity maps with finite- element model calculations the InGaAs interdiffusion profile in the ring is determined. It strongly depends on the crystallographic orientation. In the ring we find a maximum InAs concentration of more than 80\% along {[} 110 ], while along {[} 110 ] it is below 20\%. This results from the preferred diffusion of InAs along {[} 110] .(c) 2006 American Institute of Physics.}",
	doi = "{10.1063/1.2170401}",
	article-number = "{033519}",
	issn = "{0021-8979}",
	researcherid-numbers = "{Schaff, William/B-5839-2009}",
	times-cited = "{16}",
	unique-id = "{ISI:000235341000028}"
}

E Piskorska, V Holy, M Siebert, B Krause, T H Metzger, Th. Schmidt, J Falta, T Yamaguchi and D Hommel. Diffraction anomalous fine structure investigation of InGaN quantum dots. In S Hildebrandt and M Stutzmann (eds.). Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6 3(6). 2006, 1662-1666. 6th International Conference on Nitride Semiconductors (ICNS-6), Bremen, GERMANY, AUG 28-SEP 02, 2005. BibTeX

@inproceedings{ ISI:000239543600067,
	author = "Piskorska, E. and Holy, V. and Siebert, M. and Krause, B. and Metzger, T. H. and Schmidt, Th. and Falta, J. and Yamaguchi, T. and Hommel, D.",
	editor = "{Hildebrandt, S and Stutzmann, M}",
	title = "{Diffraction anomalous fine structure investigation of InGaN quantum dots}",
	booktitle = "{Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6}",
	series = "{PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS}",
	year = "{2006}",
	volume = "{3}",
	number = "{6}",
	pages = "{1662-1666}",
	note = "{6th International Conference on Nitride Semiconductors (ICNS-6), Bremen, GERMANY, AUG 28-SEP 02, 2005}",
	abstract = "{Diffraction anomalous-fine structure technique was used for the investigation of the chemical composition of self-assembled non-capped InGaN quantum dots grown on GaN. In a grazing-incidence geometry, a dependence of the energy of the GaK absorption edge on the radial scattering vector was found. This dependence is explained by a chemical shift of the GaK absorption edge due to the In content and due to the local elastic strains in quantum dots. (c) 2006 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim.}",
	doi = "{10.1002/pssc.200565443}",
	issn = "{1610-1634}",
	times-cited = "{0}",
	unique-id = "{ISI:000239543600067}"
}

S Danis and V Holy. Diffuse x-ray scattering from misfit and threading dislocations in PbTe/BaF2/Si(111) thin layers. PHYSICAL REVIEW B 73(1), Leden 2006. BibTeX

@article{ ISI:000235009000038,
	author = "Danis, S and Holy, V",
	title = "{Diffuse x-ray scattering from misfit and threading dislocations in PbTe/BaF2/Si(111) thin layers}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{2006}",
	volume = "{73}",
	number = "{1}",
	month = "{JAN}",
	abstract = "{Diffuse x-ray scattering from epitaxial PbTe layers on Si(111) is analyzed both theoretically and experimentally. Reciprocal-space maps and x-ray diffraction profiles are measured and simulated for symmetrical and asymmetrical diffractions as well. The intensity distribution of diffusively scattered radiation is simulated within the statistical theory of x-ray scattering. Both types of expected defects-misfit and threading dislocations-are discussed. Comparing simulated maps to measured ones we can distinguish between contributions arising from misfit and threading dislocations. In the case of PbTe thin layers, the majority diffuse scattering comes from misfit dislocations.}",
	doi = "{10.1103/PhysRevB.73.014102}",
	article-number = "{014102}",
	issn = "{1098-0121}",
	times-cited = "{0}",
	unique-id = "{ISI:000235009000038}"
}

S Danis and V Holy. Diffuse X-ray scattering from GaN/SiC (0001) thin films. ZEITSCHRIFT FUR KRISTALLOGRAPHIE (Part 1, 23):141-146, 2006. 9th European Powder Diffraction Conference, Prague, CZECH REPUBLIC, SEP 02-05, 2004. BibTeX

@article{ ISI:000238607800025,
	author = "Danis, S and Holy, V",
	title = "{Diffuse X-ray scattering from GaN/SiC (0001) thin films}",
	journal = "{ZEITSCHRIFT FUR KRISTALLOGRAPHIE}",
	year = "{2006}",
	number = "{Part 1, 23}",
	pages = "{141-146}",
	note = "{9th European Powder Diffraction Conference, Prague, CZECH REPUBLIC, SEP 02-05, 2004}",
	abstract = "{A statistical theory of x-ray scattering from dislocations oriented perpendicular to the surface in semiconductor thin films is presented. We apply this theory to the description of diffuse x-ray scattering from both screw and edge threading dislocations in GaN thin films grown on SiC substrate. Our theory predicts a non-Gaussian shape of scattered intensity maxima in x-ray diffraction. The screw and edge dislocation densities are obtained from simulations of the experimental data.}",
	issn = "{0044-2968}",
	times-cited = "{2}",
	unique-id = "{ISI:000238607800025}"
}

S Danis, V Holy, D Zimin and H Zogg. Patterson-like analysis of diffuse x-ray scattering from epitaxial mosaic PbTe layers on Si(111). JOURNAL OF APPLIED PHYSICS 98(10), 2005. BibTeX

@article{ ISI:000233602600032,
	author = "Danis, S and Holy, V and Zimin, D and Zogg, H",
	title = "{Patterson-like analysis of diffuse x-ray scattering from epitaxial mosaic PbTe layers on Si(111)}",
	journal = "{JOURNAL OF APPLIED PHYSICS}",
	year = "{2005}",
	volume = "{98}",
	number = "{10}",
	month = "{NOV 15}",
	abstract = "{A simple approach for the analysis of mosaic epitaxial layers is proposed, based on a Patterson-like analysis of the reciprocal-space distribution of the scattered intensity. Within this approach, the mosaic-block-shape function P and the deformation correlation function are determined. The method is used for the analysis of relaxed PbTe epitaxial layers on Si(111). The sizes of the mosaic blocks determined by this method are compared with the results of conventional Williamson-Hall-type analyses of the width of the diffraction maxima. The block sizes compare well with the mean distances of threading dislocations penetrating the PbTe layers. (c) 2005 American Institute of Physics.}",
	doi = "{10.1063/1.2136234}",
	article-number = "{103522}",
	issn = "{0021-8979}",
	times-cited = "{0}",
	unique-id = "{ISI:000233602600032}"
}

PF Fewster, NL Andrew, V Holy and K Barmak. X-ray diffraction from polycrystalline multilayers in grazing-incidence geometry: Measurement of crystallite size depth distribution. PHYSICAL REVIEW B 72(17), Listopad 2005. BibTeX

@article{ ISI:000233603500038,
	author = "Fewster, PF and Andrew, NL and Holy, V and Barmak, K",
	title = "{X-ray diffraction from polycrystalline multilayers in grazing-incidence geometry: Measurement of crystallite size depth distribution}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{2005}",
	volume = "{72}",
	number = "{17}",
	month = "{NOV}",
	abstract = "{A method to measure the crystallite size and its distribution as a function of depth in multilayer thin films is described. The principle relies on the idea that when x-rays are scattered at an interface the incident and scattered waves create a standing wave whose periodicity can be varied and thereby enhance the scattering at certain depths. Practical examples of this method are given for Nb/Al periodic multilayers, one of which indicates considerable macrostrain for the surface layer and a variation in microstrain as a function of depth. The theoretical modeling of the scattering process is presented, which includes the influence of the general density modulation and interfacial roughness. Both these contributions are shown to be necessary to account for the experimental scattering profiles.}",
	doi = "{10.1103/PhysRevB.72.174105}",
	article-number = "{174105}",
	issn = "{1098-0121}",
	researcherid-numbers = "{Barmak, Katayun/A-9804-2008}",
	times-cited = "{5}",
	unique-id = "{ISI:000233603500038}"
}

J Novak, V Holy, J Stangl, T Fromherz, Z Zhong, G Chen, G Bauer and B Struth. Ge/Si islands in a three-dimensional island crystal studied by x-ray diffraction. JOURNAL OF APPLIED PHYSICS 98(7), 2005. BibTeX

@article{ ISI:000232558200023,
	author = "Novak, J and Holy, V and Stangl, J and Fromherz, T and Zhong, Z and Chen, G and Bauer, G and Struth, B",
	title = "{Ge/Si islands in a three-dimensional island crystal studied by x-ray diffraction}",
	journal = "{JOURNAL OF APPLIED PHYSICS}",
	year = "{2005}",
	volume = "{98}",
	number = "{7}",
	month = "{OCT 1}",
	abstract = "{Coplanar high-resolution x-ray diffraction has been used for the characterization of size, chemical composition, and strain of Ge/Si (001) islands in a three-dimensional island crystal grown using self-assembly on a prepatterned (001) Si substrate. The measured diffusely scattered intensity is simulated using the kinematical approximation and the parameters of model islands are fitted. These simulations require calculations of the strain fields within the islands and the spacer layers. For this purpose, an analytical approach to solve the continuum elasticity equations has been extended to a full three-dimensional calculation. The Ge content in the islands is found to be on the average 40\%, and the island shape does not change dramatically during capping. (c) 2005 American Institute of Physics.}",
	doi = "{10.1063/1.2073974}",
	article-number = "{073517}",
	issn = "{0021-8979}",
	times-cited = "{8}",
	unique-id = "{ISI:000232558200023}"
}

V Holy, TU Schulli, RT Lechner, G Springholz and G Bauer. Anomalous X-ray diffraction from self-assembled PbSe/PbEuTe quantum dots. JOURNAL OF ALLOYS AND COMPOUNDS 401(1-2):4-10, 2005. 7th International School and Symposium on Synchrotron Radiation in Natural Science, Zakopane, POLAND, JUN 08-13, 2004. BibTeX

@article{ ISI:000232267700003,
	author = "Holy, V and Schulli, TU and Lechner, RT and Springholz, G and Bauer, G",
	title = "{Anomalous X-ray diffraction from self-assembled PbSe/PbEuTe quantum dots}",
	journal = "{JOURNAL OF ALLOYS AND COMPOUNDS}",
	year = "{2005}",
	volume = "{401}",
	number = "{1-2}",
	pages = "{4-10}",
	month = "{SEP 29}",
	note = "{7th International School and Symposium on Synchrotron Radiation in Natural Science, Zakopane, POLAND, JUN 08-13, 2004}",
	organization = "{European Phys Soc; PREVAC Co; Hilgenberg GmbH}",
	abstract = "{Anomalous X-ray scattering from self-assembled PbSe quantum dots embedded in Pb1-xEuxTe was used for the study of their structure. The measured reciprocal-space distributions of diffracted intensity were compared with simulations based on kinematical scattering theory and continuum elasticity. From the comparison, the mean chemical composition of the dots and their aspect ratio (height/width) were estimated. (c) 2005 Elsevier B.V. All rights reserved.}",
	doi = "{10.1016/j.jallcom.2004.11.075}",
	issn = "{0925-8388}",
	times-cited = "{2}",
	unique-id = "{ISI:000232267700003}"
}

S Danis and V Holy. Diffuse X-ray scattering from misfit and threading dislocations in relaxed epitaxial layers. JOURNAL OF ALLOYS AND COMPOUNDS 401(1-2):217-220, 2005. International Conference on Experimental and Computing Methods in High Resolution Diffraction Applied for Structure Characterization of Modern Materials (HREDAMM), Zakopane, POLAND, JUN 13-17, 2004. BibTeX

@article{ ISI:000232267700040,
	author = "Danis, S and Holy, V",
	title = "{Diffuse X-ray scattering from misfit and threading dislocations in relaxed epitaxial layers}",
	journal = "{JOURNAL OF ALLOYS AND COMPOUNDS}",
	year = "{2005}",
	volume = "{401}",
	number = "{1-2}",
	pages = "{217-220}",
	month = "{SEP 29}",
	note = "{International Conference on Experimental and Computing Methods in High Resolution Diffraction Applied for Structure Characterization of Modern Materials (HREDAMM), Zakopane, POLAND, JUN 13-17, 2004}",
	organization = "{Polish Acad Sci, Inst Phys; Polish Acad Sci, Comm Crystallog; European Commiss Res Directorate Gen; natl Comm Sci Res; PANalytical BV}",
	abstract = "{A statistical theory of X-ray scattering from dislocations oriented parallel or perpendicular to the surface in semiconductor thin film is presented. We apply this theory to two particular cases. At first, we derive formulae for diffusively scattered X-ray intensity from screw threading dislocations in GaN thin film in high-density approximation. Correlation in dislocation positions is involved in calculations. Diffuse X-ray scattering is calculated in case of PbTe thin films with various thicknesses in the second case. From the fit, the dislocation density was determined. (c) 2005 Published by Elsevier B.V.}",
	doi = "{10.1016/j.jallcom.2005.01.056}",
	issn = "{0925-8388}",
	times-cited = "{2}",
	unique-id = "{ISI:000232267700040}"
}

O Caha, P Mikulik, J Novak, V Holy, SC Moss, A Norman, A Mascarenhas, JL Reno and B Krause. Spontaneous lateral modulation in short-period superlattices investigated by grazing-incidence X-ray diffraction. PHYSICAL REVIEW B 72(3), Červenec 2005. BibTeX

@article{ ISI:000230890200112,
	author = "Caha, O and Mikulik, P and Novak, J and Holy, V and Moss, SC and Norman, A and Mascarenhas, A and Reno, JL and Krause, B",
	title = "{Spontaneous lateral modulation in short-period superlattices investigated by grazing-incidence X-ray diffraction}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{2005}",
	volume = "{72}",
	number = "{3}",
	month = "{JUL}",
	abstract = "{The process of spontaneous lateral composition modulation in short-period InAs/AlAs superlattices has been investigated by grazing-incidence x-ray diffraction. We have developed a theoretical description of x-ray scattering from laterally modulated structures that makes it possible to determine the lateral composition modulation directly without assuming any structure model. From experimental intensity distributions in reciprocal space we have determined the amplitudes of the modulation and its degree of periodicity and their dependence on the number of superlattice periods. From the data it follows that the modulation process cannot be explained by bunching of monolayer steps and most likely, it is caused by stress-driven morphological instabilities of the growing surface.}",
	doi = "{10.1103/PhysRevB.72.035313}",
	article-number = "{035313}",
	issn = "{1098-0121}",
	researcherid-numbers = "{Norman, Andrew/F-1859-2010 Mikulik, Petr/E-1791-2012 Caha, Ondrej/E-4716-2012}",
	times-cited = "{0}",
	unique-id = "{ISI:000230890200112}"
}

V Holy. XTOP 2004-7th biennial conference on high resolution x-ray diffraction and imaging - Preface. JOURNAL OF PHYSICS D-APPLIED PHYSICS 38(10A, SI), 2005. BibTeX

@article{ ISI:000230243500001,
	author = "Holy, V",
	title = "{XTOP 2004-7th biennial conference on high resolution x-ray diffraction and imaging - Preface}",
	journal = "{JOURNAL OF PHYSICS D-APPLIED PHYSICS}",
	year = "{2005}",
	volume = "{38}",
	number = "{10A, SI}",
	month = "{MAY 21}",
	doi = "{10.1088/0022-3727/38/10A/E01}",
	issn = "{0022-3727}",
	times-cited = "{0}",
	unique-id = "{ISI:000230243500001}"
}

P Klang, V Holy, J Kubena, R Stoudek and J Sik. X-ray diffuse scattering from defects in nitrogen-doped Czochralski grown silicon wafers. JOURNAL OF PHYSICS D-APPLIED PHYSICS 38(10A, SI):A105-A110, 2005. 7th Biennial Conference on High Resolution X-Ray Diffraction and Imaging, Prague, CZECH REPUBLIC, SEP 07-10, 2004. BibTeX

@article{ ISI:000230243500021,
	author = "Klang, P and Holy, V and Kubena, J and Stoudek, R and Sik, J",
	title = "{X-ray diffuse scattering from defects in nitrogen-doped Czochralski grown silicon wafers}",
	journal = "{JOURNAL OF PHYSICS D-APPLIED PHYSICS}",
	year = "{2005}",
	volume = "{38}",
	number = "{10A, SI}",
	pages = "{A105-A110}",
	month = "{MAY 21}",
	note = "{7th Biennial Conference on High Resolution X-Ray Diffraction and Imaging, Prague, CZECH REPUBLIC, SEP 07-10, 2004}",
	organization = "{Czech Crystallog Assoc; Slovak Crystallog Assoc; Acad Sci, Inst Phys; Masaryk Univ; Charles Univ}",
	abstract = "{Nitrogen doping during crystal growth is used to create nitrogen-vacancy(-oxygen) complexes. These complexes enhance the nucleation of silicon oxide precipitates. The precipitates and other volume defects in silicon wafers serve as gettering centres for metal impurities during the device processing. We have studied nitrogen-doped silicon wafers (00 1) from the origin, middle and end of the ingot, annealed at low (750 degrees C) and high (1050 degrees C) temperatures, using triple-axis high-resolution x-ray diffraction. The reciprocal space intensity distributions from clusters, stacking faults and dislocation loops were modelled using the Krivoglaz theory and a continuum model of the defect deformation field. Good agreement of the theory with the experimental data was achieved for the model of dislocation loops. The symmetry of measured reciprocal space maps determines the type of dislocation loops and from extracted linear scans in the (I 11) direction we can obtain the radius and concentration of the loops. These parameters were combined with the results from selective etching and infrared absorption spectroscopy. Concentration of interstitial oxygen, shape, stoichiometry and volume fraction of precipitates were obtained from absorption spectra taken at room and liquid nitrogen temperature.}",
	doi = "{10.1088/0022-3727/38/10A/020}",
	issn = "{0022-3727}",
	times-cited = "{9}",
	unique-id = "{ISI:000230243500021}"
}

J Novak, V Holy, J Stangl, G Bauer, E Wintersberger, S Kiravittaya and OG Schmidt. A method for the characterization of strain fields in buried quantum dots using x-ray standing waves. JOURNAL OF PHYSICS D-APPLIED PHYSICS 38(10A, SI):A137-A142, 2005. 7th Biennial Conference on High Resolution X-Ray Diffraction and Imaging, Prague, CZECH REPUBLIC, SEP 07-10, 2004. BibTeX

@article{ ISI:000230243500027,
	author = "Novak, J and Holy, V and Stangl, J and Bauer, G and Wintersberger, E and Kiravittaya, S and Schmidt, OG",
	title = "{A method for the characterization of strain fields in buried quantum dots using x-ray standing waves}",
	journal = "{JOURNAL OF PHYSICS D-APPLIED PHYSICS}",
	year = "{2005}",
	volume = "{38}",
	number = "{10A, SI}",
	pages = "{A137-A142}",
	month = "{MAY 21}",
	note = "{7th Biennial Conference on High Resolution X-Ray Diffraction and Imaging, Prague, CZECH REPUBLIC, SEP 07-10, 2004}",
	organization = "{Czech Crystallog Assoc; Slovak Crystallog Assoc; Acad Sci, Inst Phys; Masaryk Univ; Charles Univ}",
	abstract = "{We have studied a possible generalization of the so-called iso-strain method that would allow for the characterization of strain fields in buried quantum dots (QDs) from x-ray grazing incidence diffraction data. In particular, the method allows us to determine the vertical position of a sub-volume of QDs of a certain lattice constant. The principle of the method is illustrated with a simulation and its precision is estimated. The method is applied for the analysis of buried InAs/GaAs QDs.}",
	doi = "{10.1088/0022-3727/38/10A/026}",
	issn = "{0022-3727}",
	times-cited = "{1}",
	unique-id = "{ISI:000230243500027}"
}

J Stangl, T Schulli, A Hesse, G Bauer and V Holy. X-ray scattering methods for the study of epitaxial self-assembled quantum dots. In BA Joyce, PC Kelires, AG Naumovets and DD Vvedensky (eds.). Quantum Dots: Fundamentals, Applications, and Frontiers 190. 2005, 183-207. NATO Advanced Research Workshop on Quantum Dots - Fundamentals, Applications, and Frontieres, Crete, GREECE, JUL 20-24, 2003. BibTeX

@inproceedings{ ISI:000231849400013,
	author = "Stangl, J and Schulli, T and Hesse, A and Bauer, G and Holy, V",
	editor = "{Joyce, BA and Kelires, PC and Naumovets, AG and Vvedensky, DD}",
	title = "{X-ray scattering methods for the study of epitaxial self-assembled quantum dots}",
	booktitle = "{Quantum Dots: Fundamentals, Applications, and Frontiers}",
	series = "{NATO SCIENCE SERIES, SERIES II: MATHEMATICS, PHYSICS AND CHEMISTRY}",
	year = "{2005}",
	volume = "{190}",
	pages = "{183-207}",
	note = "{NATO Advanced Research Workshop on Quantum Dots - Fundamentals, Applications, and Frontieres, Crete, GREECE, JUL 20-24, 2003}",
	organization = "{NATO, Sci Affairs Div; British Assoc Crystal Growth}",
	abstract = "{Several x-ray diffraction methods are presented to determine the local chemical composition of self-assembled islands and to discriminate them from strain gradients. Two different routes are followed: in the first approach, the scattered intensities are simulated using numerical fitting to a suitable structure model for the islands (indirect methods). In the second one, the structural data are directly derived from the experimental ones. This direct approach is based on the so-called iso-strain scattering method and/or on the anomalous diffraction technique, which uses the strong enhancement and suppression of the scattered intensity close to the absorption edge of one of the chemical elements in the island. We show that for Ge dome-shaped islands the different techniques give similar results.}",
	isbn = "{1-4020-3313-3}",
	times-cited = "{1}",
	unique-id = "{ISI:000231849400013}"
}

O Caha, V Krapek, V Holy, SC Moss, JH Li, AG Norman, A Mascarenhas, JL Reno, J Stangl and M Meduna. X-ray diffraction on laterally modulated (InAs)(n)/(AlAs)(m) short-period superlattices. JOURNAL OF APPLIED PHYSICS 96(9):4833-4838, 2004. BibTeX

@article{ ISI:000224799300018,
	author = "Caha, O and Krapek, V and Holy, V and Moss, SC and Li, JH and Norman, AG and Mascarenhas, A and Reno, JL and Stangl, J and Meduna, M",
	title = "{X-ray diffraction on laterally modulated (InAs)(n)/(AlAs)(m) short-period superlattices}",
	journal = "{JOURNAL OF APPLIED PHYSICS}",
	year = "{2004}",
	volume = "{96}",
	number = "{9}",
	pages = "{4833-4838}",
	month = "{NOV 1}",
	abstract = "{Lateral composition modulation in InAs/AlAs short-period superlattices was investigated by x-ray grazing-incidence diffraction and coplanar x-ray diffraction at a ``normal{''} wavelength and at an anomalous wavelength, for which diffraction from the (200) planes does not exhibit a chemical contrast. The experimental data were compared with theoretical simulations assuming that the interfaces consist of a periodic sequence of monoatomic steps. The displacement field in the superlattice was calculated by continuum elasticity and using a valence-force field method. From the fit of the experimental data to the theory, the lengths of individual atomic terraces were determined. (C) 2004 American Institute of Physics.}",
	doi = "{10.1063/1.1781768}",
	issn = "{0021-8979}",
	researcherid-numbers = "{Norman, Andrew/F-1859-2010 Meduna, Mojmir/E-2474-2012 Caha, Ondrej/E-4716-2012 Krapek, Vlastimil/A-6917-2013}",
	times-cited = "{5}",
	unique-id = "{ISI:000224799300018}"
}

S Danis, V Holy, Z Zhong, G Bauer and O Ambacher. High-resolution diffuse x-ray scattering from threading dislocations in heteroepitaxial layers. APPLIED PHYSICS LETTERS 85(15):3065-3067, 2004. BibTeX

@article{ ISI:000224679300023,
	author = "Danis, S and Holy, V and Zhong, Z and Bauer, G and Ambacher, O",
	title = "{High-resolution diffuse x-ray scattering from threading dislocations in heteroepitaxial layers}",
	journal = "{APPLIED PHYSICS LETTERS}",
	year = "{2004}",
	volume = "{85}",
	number = "{15}",
	pages = "{3065-3067}",
	month = "{OCT 11}",
	abstract = "{Diffuse x-ray scattering from epitaxial layers with screw dislocations perpendicular to the surface is calculated assuming correlated dislocation positions. The resulting intensity distribution was compared with a reciprocal-space map measured in a symmetric diffraction from a hexagonal GaN(0001) layer, and a, good correspondence was achieved. From the fit, both the dislocation density and their correlation length were determined. (C) 2004 American Institute of Physics.}",
	doi = "{10.1063/1.1806279}",
	issn = "{0003-6951}",
	times-cited = "{9}",
	unique-id = "{ISI:000224679300023}"
}

J Stangl, V Holy and G Bauer. Structural properties of self-organized semiconductor nanostructures. REVIEWS OF MODERN PHYSICS 76(3, Part 1):725-783, Červenec 2004. BibTeX

@article{ ISI:000226137200004,
	author = "Stangl, J and Holy, V and Bauer, G",
	title = "{Structural properties of self-organized semiconductor nanostructures}",
	journal = "{REVIEWS OF MODERN PHYSICS}",
	year = "{2004}",
	volume = "{76}",
	number = "{3, Part 1}",
	pages = "{725-783}",
	month = "{JUL}",
	abstract = "{Instabilities in semiconductor heterostructure growth can be exploited for the self-organized formation of nanostructures, allowing for carrier confinement in all three spatial dimensions. Beside the description of various growth modes, the experimental characterization of structural properties, such as size and shape, chemical composition, and strain distribution is presented. The authors discuss the calculation of strain fields, which play an important role in the formation of such nanostructures and also influence their structural and optoelectronic properties. Several specific materials systems are surveyed together with important applications.}",
	doi = "{10.1103/RevModPhys.76.725}",
	issn = "{0034-6861}",
	times-cited = "{453}",
	unique-id = "{ISI:000226137200004}"
}

O Kirfel, E Muller, D Grutzmacher, K Kern, A Hesse, J Stangl, V Holy and G Bauer. Shape and composition change of Ge dots due to Si capping. APPLIED SURFACE SCIENCE 224(1-4):139-142, 2004. 1st International SiGe Technology and Device Meeting (ISTDM), Nagoya Univ Symposion, Nagoya, JAPAN, JAN 15-17, 2003. BibTeX

@article{ ISI:000189273900029,
	author = "Kirfel, O and Muller, E and Grutzmacher, D and Kern, K and Hesse, A and Stangl, J and Holy, V and Bauer, G",
	title = "{Shape and composition change of Ge dots due to Si capping}",
	journal = "{APPLIED SURFACE SCIENCE}",
	year = "{2004}",
	volume = "{224}",
	number = "{1-4}",
	pages = "{139-142}",
	month = "{MAR 15}",
	note = "{1st International SiGe Technology and Device Meeting (ISTDM), Nagoya Univ Symposion, Nagoya, JAPAN, JAN 15-17, 2003}",
	organization = "{Ctr Cooperat Res Adv Sci \& Technol; Lab Elect Intelligent Syst; Tohoku Univ, Res Inst Elect Communicat; Assoc Super-Adv Elect Technol; 154th Comm Semicond Interfaces \& Their Applicat; Japan Soc Promot Sci; Tech Comm Elect Mat; Inst Elect Engineers Japan; Nagoya Univ Fdn}",
	abstract = "{In order to enhance the opto-electronic properties of Ge dots embedded in Si a precise control of their structural properties is required. In this study, we have investigated the initial stages during the process of overgrowth by in situ scanning tunnelling microscopy and X-ray diffractometry. It is found that Ge dome clusters transform back into hut clusters after the deposition of 5 monolayers (ML) of Si at high temperature, while they preserve their shape at low overgrowth temperature. In addition, after the deposition of 3 ML of Si at low temperature, new clusters can be found with rectangular bases rotated by 45degrees compared to hut clusters. The changes in shape are accompanied by local changes in the strain and composition of the dots. The presented data give detailed insights into the shape and composition of Ge quantum dots before and after they have been overgrown with Si. (C) 2003 Elsevier B.V. All rights reserved.}",
	doi = "{10.1016/j.apsusc.2003.08.042}",
	issn = "{0169-4332}",
	times-cited = "{9}",
	unique-id = "{ISI:000189273900029}"
}

RT Lechner, TU Schulli, V Holy, J Stangl, A Raab, G Springholz and G Bauer. 3D hexagonal versus trigonal ordering in self-organized PbSe quantum dot superlattices. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 21(2-4):611-614, Březen 2004. 11th International Conference on Modulated Semiconductor Structures (MSS11), Nara, JAPAN, JUL 14-18, 2003. BibTeX

@article{ ISI:000220873300096,
	author = "Lechner, RT and Schulli, TU and Holy, V and Stangl, J and Raab, A and Springholz, G and Bauer, G",
	title = "{3D hexagonal versus trigonal ordering in self-organized PbSe quantum dot superlattices}",
	journal = "{PHYSICA E-LOW-DIMENSIONAL SYSTEMS \& NANOSTRUCTURES}",
	year = "{2004}",
	volume = "{21}",
	number = "{2-4}",
	pages = "{611-614}",
	month = "{MAR}",
	note = "{11th International Conference on Modulated Semiconductor Structures (MSS11), Nara, JAPAN, JUL 14-18, 2003}",
	abstract = "{Self-organized vertical and lateral ordering in PbSe/PbEuTe quantum dot superlattices grown by molecular beam epitaxy is investigated by synchrotron X-ray diffraction and atomic force microscopy. For small PbEuTe spacer thicknesses, the dots are ordered hexagonally in the lateral direction and vertically aligned along the growth direction. This yields an overall 3D hexagonal lattice of dots. For larger spacer thicknesses an FCC-like dot stacking is formed, resulting in the formation of a 3D trigonal dot lattice. From the analysis of the X-ray diffraction spectra the ordering is significantly better for the trigonally ordered dot samples. (C) 2003 Elsevier B.V. All rights reserved.}",
	doi = "{10.1016/j.physe.2003.11.090}",
	issn = "{1386-9477}",
	times-cited = "{0}",
	unique-id = "{ISI:000220873300096}"
}

RT Lechner, TU Schulli, V Holy, G Springholz, J Stangl, A Raab, G Bauer and TH Metzger. Ordering parameters of self-organized three-dimensional quantum-dot lattices determined from anomalous x-ray diffraction. APPLIED PHYSICS LETTERS 84(6):885-887, 2004. BibTeX

@article{ ISI:000188763800017,
	author = "Lechner, RT and Schulli, TU and Holy, V and Springholz, G and Stangl, J and Raab, A and Bauer, G and Metzger, TH",
	title = "{Ordering parameters of self-organized three-dimensional quantum-dot lattices determined from anomalous x-ray diffraction}",
	journal = "{APPLIED PHYSICS LETTERS}",
	year = "{2004}",
	volume = "{84}",
	number = "{6}",
	pages = "{885-887}",
	month = "{FEB 9}",
	abstract = "{Anomalous x-ray diffraction is used to investigate self-organized ordering of PbSe/PbEuTe quantum dot superlattices in which different ordered structures form for different PbSe dot layer spacings. Using a theoretical dot ordering model, the different ordering parameters are determined from the x-ray spectra. (C) 2004 American Institute of Physics.}",
	doi = "{10.1063/1.1644627}",
	issn = "{0003-6951}",
	times-cited = "{8}",
	unique-id = "{ISI:000188763800017}"
}

J Stangl, T Schulli, A Hesse, V Holy, G Bauer, M Stoffel and OG Schmidt. Structural properties of semiconductor nanostructures from X-ray scattering. In B Kramer (ed.). ADVANCES IN SOLID STATE PHYSICS 44 44. 2004, 227-237. Spring Meeting of the Condensed Matter Physics Section of the German-Physical Society, Regensburg, GERMANY, MAR 08-12, 2004. BibTeX

@inproceedings{ ISI:000224571400018,
	author = "Stangl, J and Schulli, T and Hesse, A and Holy, V and Bauer, G and Stoffel, M and Schmidt, OG",
	editor = "{Kramer, B}",
	title = "{Structural properties of semiconductor nanostructures from X-ray scattering}",
	booktitle = "{ADVANCES IN SOLID STATE PHYSICS 44}",
	series = "{ADVANCES IN SOLID STATE PHYSICS}",
	year = "{2004}",
	volume = "{44}",
	pages = "{227-237}",
	note = "{Spring Meeting of the Condensed Matter Physics Section of the German-Physical Society, Regensburg, GERMANY, MAR 08-12, 2004}",
	organization = "{German Phys Soc, Condensed Matter Phys Sect}",
	abstract = "{The optical and electrical properties of self-assembled semiconductor nanostructures are strongly affected by their chemical composition and strain state. These depend sensitively on the growth conditions. X-ray diffraction techniques are used in order to investigate series of SiGe/Si(001) island samples grown by molecular beam epitaxy at various temperatures. The chemical composition distribution and the in-plane strain of uncapped islands are obtained from x-ray diffraction reciprocal space maps and from iso-strain scattering combined with anomalous scattering at the Ge K-edge. From reciprocal space maps around asymmetric Bragg reflections, also the properties of capped islands are obtained, giving insight into the structural changes during capping of SiGe islands with Si.}",
	issn = "{1438-4329}",
	isbn = "{3-540-21148-9}",
	times-cited = "{2}",
	unique-id = "{ISI:000224571400018}"
}

M Meduna, J Novak, G Bauer, V Holy, CV Falub, S Tsujino, E Muller, D Grutzmacher, Y Campidelli, O Kermarrec and D Bensahel. Annealing studies of high Ge composition Si/SiGe multilayers. ZEITSCHRIFT FUR KRISTALLOGRAPHIE 219(4):195-200, 2004. Workshop of the Interest Group on High-Resolution X-Ray Diffraction and Synchrotron Radiation of the German-Society-of-Crystallography, GERMANY, 2003. BibTeX

@article{ ISI:000221641100004,
	author = "Meduna, M and Novak, J and Bauer, G and Holy, V and Falub, CV and Tsujino, S and Muller, E and Grutzmacher, D and Campidelli, Y and Kermarrec, O and Bensahel, D",
	title = "{Annealing studies of high Ge composition Si/SiGe multilayers}",
	journal = "{ZEITSCHRIFT FUR KRISTALLOGRAPHIE}",
	year = "{2004}",
	volume = "{219}",
	number = "{4}",
	pages = "{195-200}",
	note = "{Workshop of the Interest Group on High-Resolution X-Ray Diffraction and Synchrotron Radiation of the German-Society-of-Crystallography, GERMANY, 2003}",
	organization = "{German Soc Crystallog}",
	abstract = "{For the design flexibility of SiGe based quantum cascade lasers high Ge composition Si/SiGe (x=80\%) superlattices are important. We present an X-ray small angle scattering and high-resolution X-ray diffraction study on strain compensated Si/Si1-xGex multiple quantum well structures with Ge compositions (x up to 80\%), grown on Si0.5Ge0.5 pseudo-substrates. To test the temperature stability of such layers occurring in processing steps, in-situ annealing X-ray reflectivity measurements were performed for temperatures up to 810 degreesC. From the analysis of the reflectivity data, we obtain the layer thicknesses and the interface roughness of the superlattices during annealing. Using a one dimensional diffusion equation, the Ge diffusion coefficient for these conditions was obtained. Furthermore, the strain status and Ge composition in the superlattice structure and in the SiGe buffer before and after annealing were determined from the symmetrical and asymmetrical reciprocal space maps.}",
	doi = "{10.1524/zkri.219.4.195.30440}",
	issn = "{0044-2968}",
	researcherid-numbers = "{Meduna, Mojmir/E-2474-2012}",
	times-cited = "{3}",
	unique-id = "{ISI:000221641100004}"
}

Y Chushkin, M Ulmeanu, S Luby, E Majkova, I Kostic, P Klang, V Holy, Z Bochnicek, M Giersig, M Hilgendorff and TH Metzger. Structural study of self-assembled Co nanoparticles. JOURNAL OF APPLIED PHYSICS 94(12):7743-7748, 2003. BibTeX

@article{ ISI:000186969900057,
	author = "Chushkin, Y and Ulmeanu, M and Luby, S and Majkova, E and Kostic, I and Klang, P and Holy, V and Bochnicek, Z and Giersig, M and Hilgendorff, M and Metzger, TH",
	title = "{Structural study of self-assembled Co nanoparticles}",
	journal = "{JOURNAL OF APPLIED PHYSICS}",
	year = "{2003}",
	volume = "{94}",
	number = "{12}",
	pages = "{7743-7748}",
	month = "{DEC 15}",
	abstract = "{We studied the ordering of colloidal Co nanoparticles on various types of substrates by grazing-incidence small-angle x-ray scattering, transmission electron microscopy, and scanning electron microscopy. Particles of 5-6 nm radius were deposited by spin coating in order to obtain uniform distribution of the particles over a large surface area. Only by the grazing-incidence small angle x-ray scattering technique could the distribution of particles on a large surface area be analyzed in detail. For quantitative analysis of the spectra the distorted-wave Born approximation approach was applied. From simulations of the spectra the particle radius, the spherical shape, the mean spacing between the particles, and the type of ordering were determined. The distribution of the particles on the surface can be described by a hexagonal close-packed structure with local order. This corresponds to the transmission electron microscopy data obtained for the same type of substrate. The parameters that affect the ordering of Co nanoparticles are discussed. (C) 2003 American Institute of Physics.}",
	doi = "{10.1063/1.1627953}",
	issn = "{0021-8979}",
	researcherid-numbers = "{Kostic, Ivan/A-3032-2013}",
	times-cited = "{12}",
	unique-id = "{ISI:000186969900057}"
}

A Hesse, J Stangl, V Holy, G Bauer, O Kirfel, E Muller and D Grutzmacher. Influence of capping on strain, composition and shape of SiGe islands. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 101(1-3):71-76, 2003. Spring Meeting of the European-Materials-Research-Society (E-MRS), STRASBOURG, FRANCE, JUN 18-21, 2002. BibTeX

@article{ ISI:000184394900015,
	author = "Hesse, A and Stangl, J and Holy, V and Bauer, G and Kirfel, O and Muller, E and Grutzmacher, D",
	title = "{Influence of capping on strain, composition and shape of SiGe islands}",
	journal = "{MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY}",
	year = "{2003}",
	volume = "{101}",
	number = "{1-3}",
	pages = "{71-76}",
	month = "{AUG 15}",
	note = "{Spring Meeting of the European-Materials-Research-Society (E-MRS), STRASBOURG, FRANCE, JUN 18-21, 2002}",
	organization = "{European Mat Res Soc}",
	abstract = "{The rearrangement of SiGe islands during the deposition of Si was studied by a combination of scanning tunneling microscopy, transmission electron microscopy and high-resolution X-ray diffraction. With increasing silicon capping of the islands, an increasing flattening accompanied by a rising intermixing could be determined. Using a finite element calculation, which served as an input for X-ray simulations, the strain distribution within the islands was obtained. (C) 2003 Elsevier Science B.V. All rights reserved.}",
	doi = "{10.1016/S0921-5107(02)00655-4}",
	issn = "{0921-5107}",
	times-cited = "{6}",
	unique-id = "{ISI:000184394900015}"
}

V Chamard, TH Metzger, M Sztucki, V Holy, M Tolan, E Bellet-Amalric, C Adelmann, B Daudin and H Mariette. On the driving forces for the vertical alignment in nitride quantum dot multilayers. EUROPHYSICS LETTERS 63(2):268-274, Červenec 2003. BibTeX

@article{ ISI:000184099100017,
	author = "Chamard, V and Metzger, TH and Sztucki, M and Holy, V and Tolan, M and Bellet-Amalric, E and Adelmann, C and Daudin, B and Mariette, H",
	title = "{On the driving forces for the vertical alignment in nitride quantum dot multilayers}",
	journal = "{EUROPHYSICS LETTERS}",
	year = "{2003}",
	volume = "{63}",
	number = "{2}",
	pages = "{268-274}",
	month = "{JUL}",
	abstract = "{The layer-to-layer vertical alignment of GaN quantum dots in AlN multilayers is quantified as a function of the spacer layer thickness and the number of bilayers, using grazing-incidence X-ray scattering. Although the density of dots is comparable to the density of (0001) threading dislocations, we observe that the strong vertical ordering is strain induced by the buried dots. Elasticity theory calculations confirm this experimental result and explain the observation of the exceptionally strong vertical alignment in nitride compared to other classical systems.}",
	doi = "{10.1209/epl/i2003-00513-x}",
	issn = "{0295-5075}",
	times-cited = "{16}",
	unique-id = "{ISI:000184099100017}"
}

J Sobota, Z Bochnicek and V Holy. Friction and wear properties of C-N/MeNx nanolayer composites. THIN SOLID FILMS 433(1-2):155-159, 2003. 12th International Conference on Thin Films, BRATISLAVA, SLOVAKIA, SEP 15-20, 2002. BibTeX

@article{ ISI:000183716900029,
	author = "Sobota, J and Bochnicek, Z and Holy, V",
	title = "{Friction and wear properties of C-N/MeNx nanolayer composites}",
	journal = "{THIN SOLID FILMS}",
	year = "{2003}",
	volume = "{433}",
	number = "{1-2}",
	pages = "{155-159}",
	month = "{JUN 2}",
	note = "{12th International Conference on Thin Films, BRATISLAVA, SLOVAKIA, SEP 15-20, 2002}",
	abstract = "{Nanolayer composite coatings enable creation of stable structures with unique properties, and in particular, combination of properties conventionally considered excluding one another, such as high hardness and high toughness. Coatings, typically 1-4 mum thick, were deposited at a total pressure ranging from 0.9 to 3 Pa, at relatively low substrate temperatures not exceeding 200 degreesC. We deposited nanostructured multilayer coatings of the C-N/MeNx type, where Me could be Ti, Nb or Zr. Various substrates such as, highly polished tungsten carbide, steel and silicon were used. This study concentrated on the tribological properties of C-N/MeNx nanostructured multilayers. The friction coefficient, wear and the film transfer in a ball-on-disk tribometer were presented. The samples were measured after the deposition and then thermally treated at a constant temperature in the air. Afterwards, the samples were again measured and then exposed to a higher temperature, until the layer broke down. We also investigated the structure of the coating by means of low-angle X-ray reflection and high-angle X-ray diffraction. The potential application of C-N/MeNx nanolayer composites as hard solid lubricant is discussed. (C) 2003 Elsevier Science B.V. All rights reserved.}",
	doi = "{10.1016/S0040-6090(03)00308-0}",
	issn = "{0040-6090}",
	researcherid-numbers = "{Sobota, Jaroslav/D-5192-2012}",
	times-cited = "{2}",
	unique-id = "{ISI:000183716900029}"
}

PF Fewster, V Holy and D Zhi. Composition determination in quantum dots with in-plane scattering compared with STEM and EDX analysis. JOURNAL OF PHYSICS D-APPLIED PHYSICS 36(10A, SI):A217-A221, 2003. X-TOP 2002 Conference, GRENOBLE, FRANCE, 2002. BibTeX

@article{ ISI:000183446300046,
	author = "Fewster, PF and Holy, V and Zhi, D",
	title = "{Composition determination in quantum dots with in-plane scattering compared with STEM and EDX analysis}",
	journal = "{JOURNAL OF PHYSICS D-APPLIED PHYSICS}",
	year = "{2003}",
	volume = "{36}",
	number = "{10A, SI}",
	pages = "{A217-A221}",
	month = "{MAY 21}",
	note = "{X-TOP 2002 Conference, GRENOBLE, FRANCE, 2002}",
	abstract = "{The diffuse x-ray scattering from a single buried layer of quantum dots has been observed and interpreted to estimate the composition and shape of the dots. The diffuse scattering is measured on a modified laboratory diffractometer in very high-resolution mode, using the in-plane scattering geometry. The resultant reciprocal space maps were interpreted based on the distorted Born wave approximation. In-plane scattering removes all the influences except those associated with lateral inhomogeneities, i.e. the strain fields of the dots. This sample was also analysed by transmission electron microscopy, to extract the shape and by energy dispersive x-ray analysis to determine the composition. Despite the very different averaging volumes of the two approaches the results are in general agreement and suggest that this x-ray scattering method for this extreme case (very weak scattering from a single layer of dots) gives a useful estimate of the composition and shape of these structures.}",
	doi = "{10.1088/0022-3727/36/10A/345}",
	issn = "{0022-3727}",
	times-cited = "{7}",
	unique-id = "{ISI:000183446300046}"
}

V Holy and PF Fewster. Dynamical diffraction in layered systems - a quest for the final formula. JOURNAL OF PHYSICS D-APPLIED PHYSICS 36(10A, SI):A5-A8, 2003. X-TOP 2002 Conference, GRENOBLE, FRANCE, 2002. BibTeX

@article{ ISI:000183446300003,
	author = "Holy, V and Fewster, PF",
	title = "{Dynamical diffraction in layered systems - a quest for the final formula}",
	journal = "{JOURNAL OF PHYSICS D-APPLIED PHYSICS}",
	year = "{2003}",
	volume = "{36}",
	number = "{10A, SI}",
	pages = "{A5-A8}",
	month = "{MAY 21}",
	note = "{X-TOP 2002 Conference, GRENOBLE, FRANCE, 2002}",
	abstract = "{We present two-beam and three-beam dynamical diffraction theories for strained multilayers, where no other approximations are used. We compare the resulting diffraction curves with the calculations using the conventional two-beam dynamical theory and by a kinematical approach. We show that between the diffraction maxima all the dynamical approaches used do not yield correct results and a two-dimensional formulation of the dynamical theory must be used.}",
	issn = "{0022-3727}",
	times-cited = "{6}",
	unique-id = "{ISI:000183446300003}"
}

J Stangl, A Hesse, V Holy, Z Zhong, G Bauer, U Denker and OG Schmidt. Effect of overgrowth temperature on shape, strain, and composition of buried Ge islands deduced from x-ray diffraction. APPLIED PHYSICS LETTERS 82(14):2251-2253, 2003. BibTeX

@article{ ISI:000182018800019,
	author = "Stangl, J and Hesse, A and Holy, V and Zhong, Z and Bauer, G and Denker, U and Schmidt, OG",
	title = "{Effect of overgrowth temperature on shape, strain, and composition of buried Ge islands deduced from x-ray diffraction}",
	journal = "{APPLIED PHYSICS LETTERS}",
	year = "{2003}",
	volume = "{82}",
	number = "{14}",
	pages = "{2251-2253}",
	month = "{APR 7}",
	abstract = "{We have investigated a series of samples containing SiGe islands capped at different growth temperatures. A layer of islands formed by deposition of 5 ML of pure Ge was capped with Si, deposited at temperatures of 460, 540, and 630 degreesC, respectively. The Ge composition profile and the shape of the buried islands are deduced from x-ray diffraction data. While for capping at high substrate temperatures a significant dilution of the Ge content and a flattening of the islands occur, capping at low temperatures maintains a high aspect ratio and a high Ge content of the islands. The maximum in-plane strain in the island remains as high as 0.005 for capping at low temperatures. (C) 2003 American Institute of Physics.}",
	doi = "{10.1063/1.1565695}",
	issn = "{0003-6951}",
	times-cited = "{30}",
	unique-id = "{ISI:000182018800019}"
}

G Springholz, A Raab, RT Lechner and V Holy. Dot size dependence of vertical and lateral ordering in self-organized PbSe/Pb1-xEuxTe quantum-dot superlattices. APPLIED PHYSICS LETTERS 82(5):799-801, 2003. BibTeX

@article{ ISI:000180687600046,
	author = "Springholz, G and Raab, A and Lechner, RT and Holy, V",
	title = "{Dot size dependence of vertical and lateral ordering in self-organized PbSe/Pb1-xEuxTe quantum-dot superlattices}",
	journal = "{APPLIED PHYSICS LETTERS}",
	year = "{2003}",
	volume = "{82}",
	number = "{5}",
	pages = "{799-801}",
	month = "{FEB 3}",
	abstract = "{Self-organized vertical and lateral ordering in PbSe/Pb1-xEuxTe quantum-dot superlattices is investigated as a function of PbSe dot layer thickness. An efficient lateral ordering and face centered cubic-like dot stacking occurs only for PbSe thicknesses between 4-6 monolayers. For smaller thicknesses, no correlations are formed, whereas for larger thicknesses the dots are vertically aligned along the growth direction. These transitions are explained by changes in interlayer dot interactions as a function of the dot size. (C) 2003 American Institute of Physics.}",
	doi = "{10.1063/1.1539279}",
	issn = "{0003-6951}",
	times-cited = "{7}",
	unique-id = "{ISI:000180687600046}"
}

JH Li, SC Moss, V Holy, AG Norman, A Mascarenhas and JL Reno. X-ray characterization of nanostructured semiconductor short-period superlattices. In MJ Aziz, NC Bartelt, I Berbezier, JB Hannon and SJ Hearne (eds.). MORPHOLOGICAL AND COMPOSITIONAL EVOLUTION OF THIN FILMS 749. 2003, 389-394. Symposium on Morphological and Compositional Evolution of Thin Films, BOSTON, MA, DEC 02-05, 2002. BibTeX

@inproceedings{ ISI:000185075500059,
	author = "Li, JH and Moss, SC and Holy, V and Norman, AG and Mascarenhas, A and Reno, JL",
	editor = "{Aziz, MJ and Bartelt, NC and Berbezier, I and Hannon, JB and Hearne, SJ}",
	title = "{X-ray characterization of nanostructured semiconductor short-period superlattices}",
	booktitle = "{MORPHOLOGICAL AND COMPOSITIONAL EVOLUTION OF THIN FILMS}",
	series = "{MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS}",
	year = "{2003}",
	volume = "{749}",
	pages = "{389-394}",
	note = "{Symposium on Morphological and Compositional Evolution of Thin Films, BOSTON, MA, DEC 02-05, 2002}",
	organization = "{Mat Res Soc}",
	abstract = "{Spontaneous lateral composition modulation during semiconductor thin film growth offers a particularly versatile and cost-effective approach to manufacture nanoscale devices. Recent experimental and theoretical studies have revealed that regular lateral composition modulation can be achieved via MBE growth of the so-called short-period superlattices and can be optimized via appropriate control of the global strain, substrate surface, and processing conditions. To characterize this phenomenon, we used synchrotron x-ray scattering to identify the interfacial morphology and laterally modulated composition profile of nearly strain-balanced InAs/AlAs short-period superlattices. Our results were compared with a theoretical model. It is shown that the lateral composition modulation is predominately caused by a vertically correlated morphlogical undulation of the superlattice layers.}",
	issn = "{0272-9172}",
	isbn = "{1-55899-686-9}",
	researcherid-numbers = "{Bartelt, Norman/G-2927-2012}",
	times-cited = "{0}",
	unique-id = "{ISI:000185075500059}"
}

J Stangl, A Hesse, V Holy, G Bauer, U Denker, OG Schmidt, O Kirfel and D Grutzmacher. Structural properties of SiGe islands: Effect of capping. In MJ Aziz, NC Bartelt, I Berbezier, JB Hannon and SJ Hearne (eds.). MORPHOLOGICAL AND COMPOSITIONAL EVOLUTION OF THIN FILMS 749. 2003, 403-413. Symposium on Morphological and Compositional Evolution of Thin Films, BOSTON, MA, DEC 02-05, 2002. BibTeX

@inproceedings{ ISI:000185075500061,
	author = "Stangl, J and Hesse, A and Holy, V and Bauer, G and Denker, U and Schmidt, OG and Kirfel, O and Grutzmacher, D",
	editor = "{Aziz, MJ and Bartelt, NC and Berbezier, I and Hannon, JB and Hearne, SJ}",
	title = "{Structural properties of SiGe islands: Effect of capping}",
	booktitle = "{MORPHOLOGICAL AND COMPOSITIONAL EVOLUTION OF THIN FILMS}",
	series = "{MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS}",
	year = "{2003}",
	volume = "{749}",
	pages = "{403-413}",
	note = "{Symposium on Morphological and Compositional Evolution of Thin Films, BOSTON, MA, DEC 02-05, 2002}",
	organization = "{Mat Res Soc}",
	abstract = "{Self-organized nanostructures are increasingly important for novel optoelectronic devices, as high densities of quantum dots can be deposited directly during heteroepitaxial growth. Due to the elastic relaxation in 3D nanostructures, properties differing from 2D systems can be achieved, e.g., higher Ge contents in SiGe islands than in planar layers with the same total amount of Ge call be realized, enhancing the design freedom for, e.g., detectors or high frequency transistors. However, when such nanostructures are overgrown, which is inevitable for any application, they often undergo significant changes, partly eliminating their distinct advantages. We present ail investigation of SiGe islands formed by deposition of pure Ge on Si (001). X-ray scattering and diffraction is employed to obtain the shape, strain and Cc distribution in uncapped as well as Si-capped islands. For the analysis, model calculations of the strain fields are required. The finite element method is used for uncapped islands, for buried nanostructures a novel analytical approach has been developed. For T-growth similar or equal to 650degreesC, optimized for island formation, the Ge content in the top part of uncapped islands reaches 100\%, at ail elastic relaxation of about 50\%. During capping, the maximum Ge content considerably decreases to about 50\%. At the same time, the islands become very flat, with a decrease in height from 13 to 6nm accompanied by an increase in base diameter from about 100nm to 180nm. The elastic relaxation decreases to about 2.5\%, so that the buried islands have properties not very much different from 2D layers. Lowering the growth temperature for the Si cap, this effect can be avoided, for Tgrowth as low as 460degreesC, the structure of the uncapped islands can indeed be preserved.}",
	issn = "{0272-9172}",
	isbn = "{1-55899-686-9}",
	times-cited = "{0}",
	unique-id = "{ISI:000185075500061}"
}

J Stangl, A Hesse, T Roch, V Holy, G Bauer, T Schuelli and TH Metzger. Structural investigation of semiconductor nanostructures by X-ray techniques. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 200:11-23, Leden 2003. Spring Meeting of the European-Materials-Research-Society (E-MRS), STRASBOURG, FRANCE, JUN 18-21, 2002. BibTeX

@article{ ISI:000180998600004,
	author = "Stangl, J and Hesse, A and Roch, T and Holy, V and Bauer, G and Schuelli, T and Metzger, TH",
	title = "{Structural investigation of semiconductor nanostructures by X-ray techniques}",
	journal = "{NUCLEAR INSTRUMENTS \& METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS}",
	year = "{2003}",
	volume = "{200}",
	pages = "{11-23}",
	month = "{JAN}",
	note = "{Spring Meeting of the European-Materials-Research-Society (E-MRS), STRASBOURG, FRANCE, JUN 18-21, 2002}",
	organization = "{European Mat Res Soc}",
	abstract = "{We present an overview on the current state of X-ray scattering and diffraction techniques applied to get information on the shape, size, strain and chemical composition of semiconductor nanostructures. Examples for the analysis of self-organized grown Si/SiGe wires and islands are given. (C) 2002 Elsevier Science B.V. All rights reserved.}",
	doi = "{10.1016/S0168-583X(02)01669-5}",
	issn = "{0168-583X}",
	times-cited = "{8}",
	unique-id = "{ISI:000180998600004}"
}

A Hesse, Y Zhuang, V Holy, J Stangl, S Zerlauth, F Schaffler, G Bauer, N Darowski and U Pietsch. X-ray grazing incidence study of inhomogeneous strain relaxation in Si/SiGe wires. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 200:267-272, Leden 2003. Spring Meeting of the European-Materials-Research-Society (E-MRS), STRASBOURG, FRANCE, JUN 18-21, 2002. BibTeX

@article{ ISI:000180998600045,
	author = "Hesse, A and Zhuang, Y and Holy, V and Stangl, J and Zerlauth, S and Schaffler, F and Bauer, G and Darowski, N and Pietsch, U",
	title = "{X-ray grazing incidence study of inhomogeneous strain relaxation in Si/SiGe wires}",
	journal = "{NUCLEAR INSTRUMENTS \& METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS}",
	year = "{2003}",
	volume = "{200}",
	pages = "{267-272}",
	month = "{JAN}",
	note = "{Spring Meeting of the European-Materials-Research-Society (E-MRS), STRASBOURG, FRANCE, JUN 18-21, 2002}",
	organization = "{European Mat Res Soc}",
	abstract = "{The elastic strain relaxation in a series of dry-etched periodic multilayer Si/SiGe wire samples with different etching depths was investigated systematically by means of grazing incidence diffraction (GID). The samples were patterned by holographic lithography and reactive ion etching from a Si/SiGe superlattice grown by molecular beam epitaxy. Scanning electron microscopy and atomic force microscopy were employed to obtain information on the shape of the wires. The inhomogeneous strain distribution in the etched wires and in the non-etched part of the multilayers was derived by means of finite element calculations which were used as an input for simulations of the scattered X-ray intensities in depth dependent GID. The theoretical calculations for the scattered intensities are based on distorted-wave Born approximation. The unperturbed scattering potential was chosen with a reduced optical density corresponding to the ratio of wire width and wire period, in order to reflect the main interaction between the incident X-rays and the patterned samples. The calculations are in good agreement with the experimental data demonstrating the variation of strain relaxation with depth. (C) 2002 Elsevier Science B.V. All rights reserved.}",
	doi = "{10.1016/S0168-583X(02)01688-9}",
	issn = "{0168-583X}",
	times-cited = "{1}",
	unique-id = "{ISI:000180998600045}"
}

JH Li, V Holy, M Meduna, SC Moss, AG Norman, A Mascarenhas and JL Reno. Lateral composition modulation in (InAs)(n)/(AlAs)(m) short-period superlattices investigated by high-resolution x-ray scattering. PHYSICAL REVIEW B 66(11), 2002. BibTeX

@article{ ISI:000178461000058,
	author = "Li, JH and Holy, V and Meduna, M and Moss, SC and Norman, AG and Mascarenhas, A and Reno, JL",
	title = "{Lateral composition modulation in (InAs)(n)/(AlAs)(m) short-period superlattices investigated by high-resolution x-ray scattering}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{2002}",
	volume = "{66}",
	number = "{11}",
	month = "{SEP 15}",
	abstract = "{The lateral composition modulation in (InAs)(n)/(AlAs)(m) short-period vertical superlattices was investigated by means of synchrotron grazing-incidence small-angle x-ray scattering (GISAXS) and grazing-incidence (GID) and coplanar x-ray diffraction. Our GISAXS measurements determined experimentally the interface profile of a vertical superlattice, which then served as the basis for our diffraction analysis of the lateral composition profile. We show that the interfaces in the vertical superlattice have an asymmetric profile with an average undulation wavelength of about 280 Angstrom and an average amplitude of about 1 Angstrom. For the analysis of the lateral composition profile, a structural model based on the measured interface profile was proposed. The model also assumes that the composition is uniform in the growth direction but modulated laterally, because we consider only the zero-order vertical x-ray superlattice peak. This model, combined with strain analysis, was employed to extract the composition information from the x-ray GID and coplanar diffraction data. For the particular sample studied, both the GID and the coplanar diffraction measurements yielded a lateral compositional wavelength of about 280 Angstrom, which is the same as the morphological undulation wavelength of the interfaces, and a composition amplitude of about 15\%-16\%. From the experimentally determined interface profile, we determined that the upper limit of the amplitude of composition modulation is about 18\% for this particular sample. Our results indicate that the composition modulation is predominantly caused by morphological undulation driven by the misfit strain.}",
	doi = "{10.1103/PhysRevB.66.115312}",
	article-number = "{115312}",
	issn = "{1098-0121}",
	researcherid-numbers = "{Norman, Andrew/F-1859-2010 Meduna, Mojmir/E-2474-2012}",
	times-cited = "{13}",
	unique-id = "{ISI:000178461000058}"
}

A Hesse, J Stangl, V Holy, T Roch, G Bauer, OG Schmidt, U Denker and B Struth. Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001). PHYSICAL REVIEW B 66(8), 2002. BibTeX

@article{ ISI:000177972500079,
	author = "Hesse, A and Stangl, J and Holy, V and Roch, T and Bauer, G and Schmidt, OG and Denker, U and Struth, B",
	title = "{Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001)}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{2002}",
	volume = "{66}",
	number = "{8}",
	month = "{AUG 15}",
	abstract = "{We present a method and results based on x-ray scattering capable of resolving the shape and strain distribution in buried islands, as well as their vertical composition gradient. As an example, results are presented obtained for a single layer of SiGe dome-shaped islands capped by a 160-nm Si layer. For a growth temperature of 700 degreesC, a significant decrease of the average Ge content from about x=0.78 before overgrowth to about x=0.37 is found. The diameter of the islands increases from 110 to about 180 nm, their height shrinks from about 13 nm to 6 nm. This significant change of the island shape and content is accompanied by a pronounced change of their average in-plane lattice constant. The strain status of the overgrown flat islands is close to that of an embedded SiGe quantum well, i.e., with respect to the relaxation status of the uncapped islands a considerable strain redistribution takes place.}",
	doi = "{10.1103/PhysRevB.66.085321}",
	article-number = "{085321}",
	issn = "{1098-0121}",
	times-cited = "{62}",
	unique-id = "{ISI:000177972500079}"
}

V Holy, M Meduna, J Stangl, T Roch and G Bauer. Investigation of morphology and chemical composition of self-organized semiconductor quantum dots and wires by X-ray scattering. ACTA PHYSICA POLONICA A 102(1):7-19, Červenec 2002. 4th International School and Symposium on Physics in Materials Science (ISSPMS 01), JASZOWIEC, POLAND, SEP 23-29, 2001. BibTeX

@article{ ISI:000177246700002,
	author = "Holy, V and Meduna, M and Stangl, J and Roch, T and Bauer, G",
	title = "{Investigation of morphology and chemical composition of self-organized semiconductor quantum dots and wires by X-ray scattering}",
	journal = "{ACTA PHYSICA POLONICA A}",
	year = "{2002}",
	volume = "{102}",
	number = "{1}",
	pages = "{7-19}",
	month = "{JUL}",
	note = "{4th International School and Symposium on Physics in Materials Science (ISSPMS 01), JASZOWIEC, POLAND, SEP 23-29, 2001}",
	organization = "{Inst Atom Energy; Warsaw Univ Technol, Dept Mat Sci \& Engn}",
	abstract = "{X-ray scattering methods suitable for the investigation of the morphology and chemical composition of self-organized quantum dots and quantum wires are reviewed. Their application is demonstrated in experimental examples showing that a combination of small angle X-ray scattering with high-resolution X-ray diffraction can reveal both the shape and the chemical composition of the self-organized objects.}",
	issn = "{0587-4246}",
	researcherid-numbers = "{Meduna, Mojmir/E-2474-2012}",
	times-cited = "{0}",
	unique-id = "{ISI:000177246700002}"
}

T Roch, V Holy, A Hesse, J Stangl, T Fromherz, G Bauer, TH Metzger and S Ferrer. Strain in buried self-assembled SiGe wires studied by grazing-incidence x-ray diffraction. PHYSICAL REVIEW B 65(24), 2002. BibTeX

@article{ ISI:000177043100083,
	author = "Roch, T and Holy, V and Hesse, A and Stangl, J and Fromherz, T and Bauer, G and Metzger, TH and Ferrer, S",
	title = "{Strain in buried self-assembled SiGe wires studied by grazing-incidence x-ray diffraction}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{2002}",
	volume = "{65}",
	number = "{24}",
	month = "{JUN 15}",
	abstract = "{For the calculation of strain fields of buried self-assembled SiGe wires in a SiGe/Si multilayer, an analytical model has been developed. It is applied for a simulation of the diffraction pattern from buried wires, which were investigated by grazing-incidence x-ray diffraction. The simulations are based on the distorted-wave Born approximation, and using the analytical approach for calculating the inhomogeneous elastic strain fields within the wires and in the surrounding Si matrix, computation times can be considerably decreased. In the measured reciprocal space maps, satellite intensity maxima indicate a good lateral and vertical correlation of the wire positions. Both from the grazing-incidence diffraction and from photoluminescence, an average Ge content in the wires of 20\% is found, considerably lower than the deposited value of 45\%. The resulting lateral maximum elastic relaxation of the wire lattice is about 85\% on the top ridge.}",
	doi = "{10.1103/PhysRevB.65.245324}",
	article-number = "{245324}",
	issn = "{1098-0121}",
	times-cited = "{15}",
	unique-id = "{ISI:000177043100083}"
}

ZY Zhong, O Ambacher, A Link, V Holy, J Stangl, RT Lechner, T Roch and G Bauer. Influence of GaN domain size on the electron mobility of two-dimensional electron gases in AlGaN/GaN heterostructures determined by x-ray reflectivity and diffraction. APPLIED PHYSICS LETTERS 80(19):3521-3523, 2002. BibTeX

@article{ ISI:000175464100019,
	author = "Zhong, ZY and Ambacher, O and Link, A and Holy, V and Stangl, J and Lechner, RT and Roch, T and Bauer, G",
	title = "{Influence of GaN domain size on the electron mobility of two-dimensional electron gases in AlGaN/GaN heterostructures determined by x-ray reflectivity and diffraction}",
	journal = "{APPLIED PHYSICS LETTERS}",
	year = "{2002}",
	volume = "{80}",
	number = "{19}",
	pages = "{3521-3523}",
	month = "{MAY 13}",
	abstract = "{X-ray reflectivity and diffraction measurements were performed on Ga-face AlGaN/GaN heterostructures to determine the influence of interface roughness scattering and GaN domain boundaries scattering on the electron mobility of polarization induced two-dimensional electron gases. From simulations of the specular reflectivity, the root-mean-square roughness of the AlGaN/GaN interfaces was obtained. In reciprocal space maps, laterally elongated streaks passing through the Bragg peaks have been observed, which are attributed to column-like domains in the GaN buffer layers. The relationship between electron mobility measured by Hall effect and the interface roughness on one hand, and the column domain size on the other hand, demonstrates that the interface roughness scattering is not limiting the electron mobility, whereas the transport properties of the two-dimensional electron gas degrade with decreasing size of columnar domains in the GaN layer. (C) 2002 American Institute of Physics.}",
	doi = "{10.1063/1.1479206}",
	issn = "{0003-6951}",
	times-cited = "{14}",
	unique-id = "{ISI:000175464100019}"
}

M Meduna, V Holy, T Roch, G Bauer, OG Schmidt and K Eberl. Diffuse x-ray reflectivity from self-assembled ripples with superimposed roughness in Si/Ge superlattices. SEMICONDUCTOR SCIENCE AND TECHNOLOGY 17(5):480-486, Květen 2002. BibTeX

@article{ ISI:000175969200016,
	author = "Meduna, M and Holy, V and Roch, T and Bauer, G and Schmidt, OG and Eberl, K",
	title = "{Diffuse x-ray reflectivity from self-assembled ripples with superimposed roughness in Si/Ge superlattices}",
	journal = "{SEMICONDUCTOR SCIENCE AND TECHNOLOGY}",
	year = "{2002}",
	volume = "{17}",
	number = "{5}",
	pages = "{480-486}",
	month = "{MAY}",
	abstract = "{Non-specular x-ray reflectivity under grazing incidence is sensitive to the morphology of buried interfaces in multilayers. Using this method we have studied one-dimensional self-assembled patterns (ripples) occurring in Ge/Si superlattices. On the basis of a model of a self-affine sequence of ripples with superimposed fractal roughness, we have determined the structural parameters of the ripples from specular and non-specular x-ray reflection. The azimuthal miscut direction was close to {[}010], the ripples were not perpendicularly oriented to the miscut but almost parallel to it. The parameters and orientation of the ripple,, are explained by a zigzag structure of the atomic steps formed on the surface due to its 2 x 1 reconstruction.}",
	doi = "{10.1088/0268-1242/17/5/313}",
	issn = "{0268-1242}",
	researcherid-numbers = "{Meduna, Mojmir/E-2474-2012}",
	times-cited = "{0}",
	unique-id = "{ISI:000175969200016}"
}

M Meduna, V Holy, J Stangl, A Hesse, T Roch, G Bauer, OG Schmidt and K Eberl. Non-specular X-ray reflection from self-organized ripple structures in Si/Ge multilayers. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 13(2-4):1003-1007, Březen 2002. 10th International Conference on Modulated Semiconductor Structures, LINZ, AUSTRIA, JUL 23-27, 2001. BibTeX

@article{ ISI:000176869100212,
	author = "Meduna, M and Holy, V and Stangl, J and Hesse, A and Roch, T and Bauer, G and Schmidt, OG and Eberl, K",
	title = "{Non-specular X-ray reflection from self-organized ripple structures in Si/Ge multilayers}",
	journal = "{PHYSICA E-LOW-DIMENSIONAL SYSTEMS \& NANOSTRUCTURES}",
	year = "{2002}",
	volume = "{13}",
	number = "{2-4}",
	pages = "{1003-1007}",
	month = "{MAR}",
	note = "{10th International Conference on Modulated Semiconductor Structures, LINZ, AUSTRIA, JUL 23-27, 2001}",
	abstract = "{The ripples at the interfaces of five-period Si/Ge multilayer samples, grown on 0.3degrees miscut (0 0 1) Si are studied systematically. Five samples with Si spacer layer thicknesses ranging from 12.6 to 102.7 nm and 6 monolayer Ge were investigated. From the X-ray reflectivity investigations a characteristic step bunching morphology is found, with a ripple period which increases by more than 30\% if the Si spacer thickness is doubled from about 13 to 25 nm, but does not change further with increasing spacer. These results shed light on the ongoing discussion about the relative importance of kinetic versus strain-related origin of the ripple pattern. (C) 2002 Elsevier Science B.V. All rights reserved.}",
	doi = "{10.1016/S1386-9477(02)00289-8}",
	issn = "{1386-9477}",
	researcherid-numbers = "{Meduna, Mojmir/E-2474-2012}",
	times-cited = "{0}",
	unique-id = "{ISI:000176869100212}"
}

G Springholz, V Holy, P Mayer, M Pinczolits, A Raab, RT Lechner, G Bauer, H Kang and L Salamanca-Riba. Self-organized ordering in self-assembled quantum dot superlattices. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 88(2-3):143-152, 2002. Spring Meeting of the European-Materials-Research-Society, STRASBOURG, FRANCE, JUN 05-08, 2001. BibTeX

@article{ ISI:000173616300008,
	author = "Springholz, G and Holy, V and Mayer, P and Pinczolits, M and Raab, A and Lechner, RT and Bauer, G and Kang, H and Salamanca-Riba, L",
	title = "{Self-organized ordering in self-assembled quantum dot superlattices}",
	journal = "{MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY}",
	year = "{2002}",
	volume = "{88}",
	number = "{2-3}",
	pages = "{143-152}",
	month = "{JAN 16}",
	note = "{Spring Meeting of the European-Materials-Research-Society, STRASBOURG, FRANCE, JUN 05-08, 2001}",
	organization = "{European Mat Res Soc}",
	abstract = "{Self-organized vertical and lateral ordering in self-assembled quantum dot superlattices is based on long-range elastic interactions between the growing dots on the surface and those buried in the previous superiattice layers. These interactions may lead to a correlated dot nucleation and to the formation of ordered superstructures. For various materials systems different types of structures may be formed, ranging from vertically aligned dot superlattices for Si-Ge or III-V semiconductors to an fcc-like ABCABC...stacking in IV-VI materials. These differences are caused by the given elastic anisotropy of the superlattice materials. From systematic theoretical calculations, for all materials with high elastic anisotropy and growth orientations parallel to an elastically soft direction, layer-to-layer dot correlations inclined to the growth direction may be formed. Further changes in the dot correlations are caused by the modification of the elastic strain fields by the finite extent and shape of the buried islands. This is illustrated for IV-VI PbSe/PbEuTe dot superlattices, where either vertically aligned or fcc-stacked dot arrangements are formed as a function of spacer thickness. (C) 2002 Elsevier Science B.V. All rights reserved.}",
	doi = "{10.1016/S0921-5107(01)00872-8}",
	issn = "{0921-5107}",
	researcherid-numbers = "{Salamanca-Riba, Lourdes/B-3785-2009}",
	times-cited = "{14}",
	unique-id = "{ISI:000173616300008}"
}

J Stangl, V Holy, G Springholz, G Bauer, I Kegel and TH Metzger. Self-organized semiconductor nanostructures: shape, strain and composition. MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS 19(1-2, SI):349-358, 2002. EMRS Spring Meeting, STRASBOURG, FRANCE, JUN 05-08, 2001. BibTeX

@article{ ISI:000173080700071,
	author = "Stangl, J and Holy, V and Springholz, G and Bauer, G and Kegel, I and Metzger, TH",
	title = "{Self-organized semiconductor nanostructures: shape, strain and composition}",
	journal = "{MATERIALS SCIENCE \& ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS}",
	year = "{2002}",
	volume = "{19}",
	number = "{1-2, SI}",
	pages = "{349-358}",
	month = "{JAN 2}",
	note = "{EMRS Spring Meeting, STRASBOURG, FRANCE, JUN 05-08, 2001}",
	organization = "{EMRS}",
	abstract = "{An overview on various X-ray scattering and diffraction techniques is presented, from which information on the shape and size of quantum dots and wires, their composition and strain state can be obtained. These methods are described and applied to studies of InAs, PbSe and Ge-based nanostructures. (C) 2002 Published by Elsevier Science B.V.}",
	doi = "{10.1016/S0928-4931(01)00415-5}",
	issn = "{0928-4931}",
	times-cited = "{6}",
	unique-id = "{ISI:000173080700071}"
}

V Holy, G Bauer, J Stangl and G Springholz. Processes of self-organization during epitaxial growth of semiconductor superlattices - An x-ray scattering study. In SJL Billinge and MF Thorpe (eds.). FROM SEMICONDUCTORS TO PROTEINS: BEYOND THE AVERAGE STRUCTURE. 2002, 67-83. From Semiconductors to Proteins Workshop, TRAVERSE CITY, MI, JUL 28-AUG 01, 2001. BibTeX

@inproceedings{ ISI:000176592200005,
	author = "Holy, V and Bauer, G and Stangl, J and Springholz, G",
	editor = "{Billinge, SJL and Thorpe, MF}",
	title = "{Processes of self-organization during epitaxial growth of semiconductor superlattices - An x-ray scattering study}",
	booktitle = "{FROM SEMICONDUCTORS TO PROTEINS: BEYOND THE AVERAGE STRUCTURE}",
	series = "{FUNDAMENTAL MATERIALS RESEARCH}",
	year = "{2002}",
	pages = "{67-83}",
	note = "{From Semiconductors to Proteins Workshop, TRAVERSE CITY, MI, JUL 28-AUG 01, 2001}",
	isbn = "{0-306-47239-2}",
	times-cited = "{0}",
	unique-id = "{ISI:000176592200005}"
}

PF Fewster, V Holy and NL Andrew. Detailed structural analysis of semiconductors with X-ray scattering. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 4(6):475-481, Prosinec 2001. International Conference on Material for Advanced Technologies, SINGAPORE, SINGAPORE, JUL 01-06, 2001. BibTeX

@article{ ISI:000175066200005,
	author = "Fewster, PF and Holy, V and Andrew, NL",
	title = "{Detailed structural analysis of semiconductors with X-ray scattering}",
	journal = "{MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING}",
	year = "{2001}",
	volume = "{4}",
	number = "{6}",
	pages = "{475-481}",
	month = "{DEC}",
	note = "{International Conference on Material for Advanced Technologies, SINGAPORE, SINGAPORE, JUL 01-06, 2001}",
	abstract = "{Some of the most important material systems, GaInN alloys and quantum dot structures create interesting and complex challenges for structural analysis. This paper concentrates on the interpretation of the microstructure of both these materials, the former to assess the defect separation and the latter to obtain the shape and composition of the quantum dots. The methods used are based on mapping the X-ray intensity in reciprocal space and simulating proposed models to achieve good agreement with the experimental results. An indication of the reliability of these methods is presented. The simulation of the 0002 reciprocal space map of a <0001> orientated InGaN/GaN sample yielded a range of dimensions of the perfect regions between defects of 60 and 220 mum. This comes from careful fitting of the tails of the scattering parallel to the surface plane. The average composition within an InGaAs quantum dot has been determined to a reliability of +/-3\% and the dimensions of these buried dots evaluated from simulating the reciprocal space maps using the in-plane scattering geometry. (C) 2002 Elsevier Science Ltd. All rights reserved.}",
	doi = "{10.1016/S1369-8001(02)00005-7}",
	issn = "{1369-8001}",
	times-cited = "{4}",
	unique-id = "{ISI:000175066200005}"
}

A Anopchenko, M Jergel, E Majkova, S Luby, V Holy, A Aschentrup, I Kolina, YC Lim, G Haindl, U Kleineberg and U Heinzmann. Effect of substrate heating and ion beam polishing on the interface quality in Mo/Si multilayers - X-ray comparative study. PHYSICA B 305(1):14-20, Říjen 2001. BibTeX

@article{ ISI:000171072500003,
	author = "Anopchenko, A and Jergel, M and Majkova, E and Luby, S and Holy, V and Aschentrup, A and Kolina, I and Lim, YC and Haindl, G and Kleineberg, U and Heinzmann, U",
	title = "{Effect of substrate heating and ion beam polishing on the interface quality in Mo/Si multilayers - X-ray comparative study}",
	journal = "{PHYSICA B}",
	year = "{2001}",
	volume = "{305}",
	number = "{1}",
	pages = "{14-20}",
	month = "{OCT}",
	abstract = "{Three periodic Mo/Si multilayers were prepared by electron-beam evaporation at different conditions. An in situ polishing of amorphous Si layers with Ar+ ions of 800 eV energy and substrate heating to 170 degreesC were used for the two of them which were designed as multilayer mirrors optimized for 13 nm wavelength at normal incidence (30 periods of nominally 6.9 nm). A third multilayer was deposited at room temperature with reduced Mo layer thicknesses and number of periods to suppress interface roughness buildup. The goal was a comparison of ion beam polishing and substrate heating in terms of the interface quality and evaluation of the merit of more sophisticated depositions. The interfaces were studied by specular X-ray reflectivity and interface diffuse scattering measured at Cu K-alpha1 wavelength. The interface morphology parameters are very close on ion beam polishing and substrate heating indicating a similar relaxation mechanism of the growing surface. The main difference is a larger thickness of the Mo5Si3 interlayers with substrate heating, which has practical implications for peak reflectivities. On the other hand, a slightly worse interface replication here is appealing for the applications where a good imaging contrast is of primary importance. At room temperature deposition, the interface roughness is nearly doubled at 3 times smaller number of multilayer periods. (C) 2001 Elsevier Science B.V. All rights reserved.}",
	doi = "{10.1016/S0921-4526(01)00589-0}",
	issn = "{0921-4526}",
	researcherid-numbers = "{Anopchenko, Oleksiy/D-9478-2011 Heinzmann, Ulrich/A-6248-2012}",
	times-cited = "{9}",
	unique-id = "{ISI:000171072500003}"
}

J Stangl, A Daniel, V Holy, T Roch, G Bauer, I Kegel, TH Metzger, T Wiebach, OG Schmidt and K Eberl. Strain and composition distribution in uncapped SiGe islands from x-ray diffraction. APPLIED PHYSICS LETTERS 79(10):1474-1476, 2001. BibTeX

@article{ ISI:000170647200022,
	author = "Stangl, J and Daniel, A and Holy, V and Roch, T and Bauer, G and Kegel, I and Metzger, TH and Wiebach, T and Schmidt, OG and Eberl, K",
	title = "{Strain and composition distribution in uncapped SiGe islands from x-ray diffraction}",
	journal = "{APPLIED PHYSICS LETTERS}",
	year = "{2001}",
	volume = "{79}",
	number = "{10}",
	pages = "{1474-1476}",
	month = "{SEP 3}",
	abstract = "{We have investigated the strain and composition distribution in uncapped SiGe islands grown on Si (001) by x-ray diffraction. In order to be sensitive to the dot layer on the sample surface, and at the same time being able to measure in-plane strain and strain in growth direction, we utilized a scattering geometry at grazing incidence angles, but with high exit angles. The measured intensity distribution is compared to simulations based on the strain distribution calculated by a finite element method. Although pure Ge has been deposited during island growth by molecular beam epitaxy, the Ge composition varies from 0.5 at the island base to 1.0 at the top of the islands. Even at this top, the elastic relaxation reaches only about 50\%. (C) 2001 American Institute of Physics.}",
	doi = "{10.1063/1.1392975}",
	issn = "{0003-6951}",
	times-cited = "{55}",
	unique-id = "{ISI:000170647200022}"
}

ZY Zhong, V Holy, JH Li, J Kulik, J Bai, TD Golding and SC Moss. X-ray study of antiphase boundaries in the quadruple-period ordered GaAs0.87Sb0.13 alloy. JOURNAL OF APPLIED PHYSICS 90(2):644-649, 2001. BibTeX

@article{ ISI:000169660000014,
	author = "Zhong, ZY and Holy, V and Li, JH and Kulik, J and Bai, J and Golding, TD and Moss, SC",
	title = "{X-ray study of antiphase boundaries in the quadruple-period ordered GaAs0.87Sb0.13 alloy}",
	journal = "{JOURNAL OF APPLIED PHYSICS}",
	year = "{2001}",
	volume = "{90}",
	number = "{2}",
	pages = "{644-649}",
	month = "{JUL 15}",
	abstract = "{The x-ray diffraction intensity from antiphase boundaries (APBs) in a quadruple-period ordered GaAsSb alloy is derived introducing statistical probabilities for these APBs and their associated phase shifts. Through experimental fits, we obtain an average distance between the neighboring APBs of approximately 130, 400, and 5 nm along {[}110], {[}-110], and {[}001] directions, respectively. The short distance along the {[}001] growth direction leads to a narrow streak along {[}001] in an intensity contour map. In addition, we find that the APBs broaden the ordering peaks, while their effect on the intensity ratio between the ordering peaks is negligible. Static atomic displacements, associated with bond length disparities are also included in the calculations. (C) 2001 American Institute of Physics.}",
	doi = "{10.1063/1.1379056}",
	issn = "{0021-8979}",
	times-cited = "{3}",
	unique-id = "{ISI:000169660000014}"
}

J Sobota, G Sorensen, H Jensen, Z Bochnicek and V Holy. C-N/MeN nanocomposite coatings, deposition and testing of performance. SURFACE & COATINGS TECHNOLOGY 142:590-595, Červenec 2001. 7th International Conference on Plasma Surface Engineering (PSE 2000), PARTENKIRCHEN, GERMANY, SEP 17-21, 2000. BibTeX

@article{ ISI:000171104600097,
	author = "Sobota, J and Sorensen, G and Jensen, H and Bochnicek, Z and Holy, V",
	title = "{C-N/MeN nanocomposite coatings, deposition and testing of performance}",
	journal = "{SURFACE \& COATINGS TECHNOLOGY}",
	year = "{2001}",
	volume = "{142}",
	pages = "{590-595}",
	month = "{JUL}",
	note = "{7th International Conference on Plasma Surface Engineering (PSE 2000), PARTENKIRCHEN, GERMANY, SEP 17-21, 2000}",
	abstract = "{The present communication will report on nanostructured multilayer films containing metal nitride (NbN or ZrN) and carbon nitride. Alcatel 650 and Leybold Z550 sputtering systems equipped with two magnetrons and two r.f. generators were used for the deposition of nanocomposite coatings by r.f. reactive sputtering. The composite coatings, typically 2-3 mum thick, were deposited at a total pressure ranging from 0.2 to 1 Pa and at a relatively low substrate temperature not exceeding 200 degreesC. Various substrates, such as silicon, highly polished steel and tungsten carbide were used. The friction coefficient and wear rate were measured at room temperature in a ball-on-disc tribometer. We also investigated the structure of the multilayer by means of low-angle X-ray reflection and high angle X-ray diffraction. We determined the multilayer period and its changes with temperature from X-ray reflection. It follows from the X-ray diffraction that the polycrystalline structure of the multilayer is developed after annealing. Multilayer nanocomposites can be deposited at low substrate temperatures in conventional PVD coaters and they will combine good adhesion, low wear and low friction coefficient in one system. (C) 2001 Elsevier Science B.V. All rights reserved.}",
	doi = "{10.1016/S0257-8972(01)01173-2}",
	issn = "{0257-8972}",
	researcherid-numbers = "{Sobota, Jaroslav/D-5192-2012}",
	times-cited = "{8}",
	unique-id = "{ISI:000171104600097}"
}

A Daniel, V Holy, Y Zhuang, T Roch, J Grenzer, Z Bochnicek and G Bauer. GID study of strains in Si due to patterned SiO2. JOURNAL OF PHYSICS D-APPLIED PHYSICS 34(10A, SI):A197-A202, 2001. 5th Biennial Conference on High Resolution X-Ray Diffraction and Topography (XTOP2000), USTRON JASZOWIEC, POLAND, SEP 13-15, 2000. BibTeX

@article{ ISI:000169093700042,
	author = "Daniel, A and Holy, V and Zhuang, Y and Roch, T and Grenzer, J and Bochnicek, Z and Bauer, G",
	title = "{GID study of strains in Si due to patterned SiO2}",
	journal = "{JOURNAL OF PHYSICS D-APPLIED PHYSICS}",
	year = "{2001}",
	volume = "{34}",
	number = "{10A, SI}",
	pages = "{A197-A202}",
	month = "{MAY 21}",
	note = "{5th Biennial Conference on High Resolution X-Ray Diffraction and Topography (XTOP2000), USTRON JASZOWIEC, POLAND, SEP 13-15, 2000}",
	organization = "{Univ Warsaw, Inst Exptl Phys; Polish Acad Sci, Inst Phys Polish; Polish Acad Sci, High Pressure Res Ctr; Polish Acad Sci, Inst Phys Chem; Inst Atom Energy; Inst Electr Mat Technol; Mining \& Metallurgy Acad; Polish Acad Sci, Inst Struct \& Low Temp Res}",
	abstract = "{Lateral strain modulations in a Si substrate arising from laterally patterned periodic SiO2 stripes were investigated by x-ray grazing incidence diffraction. In this diffraction geometry a depth dependent in-plane strain analysis was performed. Using finite element calculations the displacement field in the non-patterned Si substrate was calculated, which served as an input for the simulation of the diffracted intensities based on the distorted-wave Born approximation. By varying the lattice mismatch between the SiO2 stripes and the Si substrate, a good agreement between simulations and experimental diffraction data could be achieved.}",
	doi = "{10.1088/0022-3727/34/10A/341}",
	issn = "{0022-3727}",
	times-cited = "{2}",
	unique-id = "{ISI:000169093700042}"
}

V Holy, J Stangl, G Springholz, M Pinczolits and G Bauer. High-resolution x-ray diffraction from self-organized PbSe/PbEuTe quantum dot superlattices. JOURNAL OF PHYSICS D-APPLIED PHYSICS 34(10A, SI):A1-A5, 2001. 5th Biennial Conference on High Resolution X-Ray Diffraction and Topography (XTOP2000), USTRON JASZOWIEC, POLAND, SEP 13-15, 2000. BibTeX

@article{ ISI:000169093700002,
	author = "Holy, V and Stangl, J and Springholz, G and Pinczolits, M and Bauer, G",
	title = "{High-resolution x-ray diffraction from self-organized PbSe/PbEuTe quantum dot superlattices}",
	journal = "{JOURNAL OF PHYSICS D-APPLIED PHYSICS}",
	year = "{2001}",
	volume = "{34}",
	number = "{10A, SI}",
	pages = "{A1-A5}",
	month = "{MAY 21}",
	note = "{5th Biennial Conference on High Resolution X-Ray Diffraction and Topography (XTOP2000), USTRON JASZOWIEC, POLAND, SEP 13-15, 2000}",
	organization = "{Univ Warsaw, Inst Exptl Phys; Polish Acad Sci, Inst Phys Polish; Polish Acad Sci, High Pressure Res Ctr; Polish Acad Sci, Inst Phys Chem; Inst Atom Energy; Inst Electr Mat Technol; Mining \& Metallurgy Acad; Polish Acad Sci, Inst Struct \& Low Temp Res}",
	abstract = "{High-resolution x-ray diffraction and grazing-incidence small-angle x-ray scattering are used for the investigation of the morphology of free-standing and buried self-assembled PbSe quantum dots in PbSe/PbEuTe superlattices. The measured data are simulated by means of kinematical and semikinematical scattering theories, and linear elasticity theory. The differences in the parameters of free-standing and buried dots yield a direct evidence of structure changes of self-assembled dots during their overgrowth.}",
	doi = "{10.1088/0022-3727/34/10A/301}",
	issn = "{0022-3727}",
	times-cited = "{12}",
	unique-id = "{ISI:000169093700002}"
}

M Meduna, V Holy, T Roch, G Bauer, OG Schmidt and K Eberl. X-ray reflectivity from self-assembled structures in Ge/Si superlattices. JOURNAL OF PHYSICS D-APPLIED PHYSICS 34(10A, SI):A193-A196, 2001. 5th Biennial Conference on High Resolution X-Ray Diffraction and Topography (XTOP2000), USTRON JASZOWIEC, POLAND, SEP 13-15, 2000. BibTeX

@article{ ISI:000169093700041,
	author = "Meduna, M and Holy, V and Roch, T and Bauer, G and Schmidt, OG and Eberl, K",
	title = "{X-ray reflectivity from self-assembled structures in Ge/Si superlattices}",
	journal = "{JOURNAL OF PHYSICS D-APPLIED PHYSICS}",
	year = "{2001}",
	volume = "{34}",
	number = "{10A, SI}",
	pages = "{A193-A196}",
	month = "{MAY 21}",
	note = "{5th Biennial Conference on High Resolution X-Ray Diffraction and Topography (XTOP2000), USTRON JASZOWIEC, POLAND, SEP 13-15, 2000}",
	organization = "{Univ Warsaw, Inst Exptl Phys; Polish Acad Sci, Inst Phys Polish; Polish Acad Sci, High Pressure Res Ctr; Polish Acad Sci, Inst Phys Chem; Inst Atom Energy; Inst Electr Mat Technol; Mining \& Metallurgy Acad; Polish Acad Sci, Inst Struct \& Low Temp Res}",
	abstract = "{We have investigated the structural properties of one-dimensional self-organized patterns in strained Ge/Si superlattices epitactically grown on vicinal Si(001) substrates. The orientation of the patterns with respect to the miscut was studied by non-specular x-ray reflectivity under grazing incidence and by atomic force microscopy. The unusual orientation of the structure was explained by the zigzag alignment of the monoatomic steps on 2 x 1 reconstruction surfaces.}",
	doi = "{10.1088/0022-3727/34/10A/340}",
	issn = "{0022-3727}",
	researcherid-numbers = "{Meduna, Mojmir/E-2474-2012}",
	times-cited = "{4}",
	unique-id = "{ISI:000169093700041}"
}

T Roch, V Holy, A Daniel, E Hofflinger, M Meduna, TH Metzger, G Bauer, J Zhu, K Brunner and G Abstreiter. X-ray studies on self-organized wires in SiGe/Si multilayers. JOURNAL OF PHYSICS D-APPLIED PHYSICS 34(10A, SI):A6-A10, 2001. 5th Biennial Conference on High Resolution X-Ray Diffraction and Topography (XTOP2000), USTRON JASZOWIEC, POLAND, SEP 13-15, 2000. BibTeX

@article{ ISI:000169093700003,
	author = "Roch, T and Holy, V and Daniel, A and Hofflinger, E and Meduna, M and Metzger, TH and Bauer, G and Zhu, J and Brunner, K and Abstreiter, G",
	title = "{X-ray studies on self-organized wires in SiGe/Si multilayers}",
	journal = "{JOURNAL OF PHYSICS D-APPLIED PHYSICS}",
	year = "{2001}",
	volume = "{34}",
	number = "{10A, SI}",
	pages = "{A6-A10}",
	month = "{MAY 21}",
	note = "{5th Biennial Conference on High Resolution X-Ray Diffraction and Topography (XTOP2000), USTRON JASZOWIEC, POLAND, SEP 13-15, 2000}",
	organization = "{Univ Warsaw, Inst Exptl Phys; Polish Acad Sci, Inst Phys Polish; Polish Acad Sci, High Pressure Res Ctr; Polish Acad Sci, Inst Phys Chem; Inst Atom Energy; Inst Electr Mat Technol; Mining \& Metallurgy Acad; Polish Acad Sci, Inst Struct \& Low Temp Res}",
	abstract = "{step-bunching process during the growth on vicinal Si substrates provides a template both for improved lateral ordering and size control of the resulting Ge-rich self-assembled quantum dots or wires. We have investigated a 20 period SiGe/Si wire multilayer grown by molecular beam epitaxy on a misorientated Si(001) substrate with a large miscut of 3.5 degrees towards the {[}100] direction. Parallel to the steps, i.e. along the {[}010] direction, Ge-rich wires are formed spontaneously. Their surface morphology was studied with atomic force microscopy. In order to get information on the shape and the lateral correlation not only of the wires on the top surface but also of the buried ones, we employed grazing incidence small-angle x-ray scattering (GISAXS). The GISAXS data were taken for different information depths in two orthogonal azimuths. Side maxims in coplanar high-angle diffraction and GISAXS data indicate the presence of Ge-rich self-organized wires at the buried heterointerfaces.}",
	doi = "{10.1088/0022-3727/34/10A/302}",
	issn = "{0022-3727}",
	researcherid-numbers = "{Meduna, Mojmir/E-2474-2012}",
	times-cited = "{4}",
	unique-id = "{ISI:000169093700003}"
}

V Holy, T Roch, J Stangl, A Daniel, G Bauer, TH Metzger, YH Zhu, K Brunner and G Abstreiter. Grazing incidence small-angle x-ray scattering study of self-organized SiGe wires. PHYSICAL REVIEW B 63(20), 2001. BibTeX

@article{ ISI:000168937200065,
	author = "Holy, V and Roch, T and Stangl, J and Daniel, A and Bauer, G and Metzger, TH and Zhu, YH and Brunner, K and Abstreiter, G",
	title = "{Grazing incidence small-angle x-ray scattering study of self-organized SiGe wires}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{2001}",
	volume = "{63}",
	number = "{20}",
	month = "{MAY 15}",
	abstract = "{The structure of self-organized quantum wires buried at the interfaces of a SiGe/Si multilayer is investigated by grazing incidence small-angle x-ray scattering. A nearly periodic distribution of wires, well described by a short-range ordering model, gives rise to intensity satellite maxima in reciprocal space. The shape of the wire cross section is determined from the heights of these intensity maxima, and the analysis reveals that the conventional step-bunching model is not sufficient to explain the wire shape.}",
	doi = "{10.1103/PhysRevB.63.205318}",
	article-number = "{205318}",
	issn = "{0163-1829}",
	times-cited = "{19}",
	unique-id = "{ISI:000168937200065}"
}

M Meduna, V Holy, T Roch, J Stangl, G Bauer, J Zhu, K Brunner and G Abstreiter. X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy. JOURNAL OF APPLIED PHYSICS 89(9):4836-4842, 2001. BibTeX

@article{ ISI:000168130100025,
	author = "Meduna, M and Holy, V and Roch, T and Stangl, J and Bauer, G and Zhu, J and Brunner, K and Abstreiter, G",
	title = "{X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy}",
	journal = "{JOURNAL OF APPLIED PHYSICS}",
	year = "{2001}",
	volume = "{89}",
	number = "{9}",
	pages = "{4836-4842}",
	month = "{MAY 1}",
	abstract = "{We have studied the interface morphology of SiGe/Si multilayers by means of specular and nonspecular x-ray reflectivity under grazing incidence. The samples were grown by molecular beam epitaxy on silicon substrates with (001) surface orientation and with different directions of the surface misorientation. X-ray reflectivity measurements in different azimuths are compared to data from atomic force microscopy, which are used to simulate the x-ray experiments. With this combination of experimental techniques we have determined the structural properties, in particular the ordering of different features present at the sample surface and inside the multilayer at the SiGe/Si layer interfaces. (C) 2001 American Institute of Physics.}",
	issn = "{0021-8979}",
	researcherid-numbers = "{Meduna, Mojmir/E-2474-2012}",
	times-cited = "{5}",
	unique-id = "{ISI:000168130100025}"
}

JH Li, J Kulik, V Holy, Z Zhong, SC Moss, Y Zhang, SP Ahrenkiel, A Mascarenhas and JM Bai. X-ray diffraction from CuPt-ordered III-V ternary semiconductor alloy films. PHYSICAL REVIEW B 63(15), 2001. BibTeX

@article{ ISI:000168215400062,
	author = "Li, JH and Kulik, J and Holy, V and Zhong, Z and Moss, SC and Zhang, Y and Ahrenkiel, SP and Mascarenhas, A and Bai, JM",
	title = "{X-ray diffraction from CuPt-ordered III-V ternary semiconductor alloy films}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{2001}",
	volume = "{63}",
	number = "{15}",
	month = "{APR 15}",
	abstract = "{A model has been developed to describe x-ray scattering from CuPt-type ordered III-V ternary semiconductor alloys. The model takes into account the size distribution of the two different laminae-shaped variants, the random distribution of antiphase domain boundaries in each variant, and the atomic displacements due to the bond-length difference between the two constitutive binary materials. A synchrotron x-ray source was employed to measure the weak-ordering reflections from CuPt-ordered Ga0.5In0.5P and Al0.5In0.5As samples. By comparing the experimental results and the model calculations, structure information, including the average number of atomic layers in the laminae of each variant, the average antiphase domain size, and the average order parameter in each variant, were obtained. Results from single-variant films and poorly ordered films are also discussed.}",
	article-number = "{155310}",
	issn = "{0163-1829}",
	times-cited = "{5}",
	unique-id = "{ISI:000168215400062}"
}

HH Kang, L Salamanca-Riba, M Pinczolits, G Springholz, V Holy and G Bauer. TEM investigation of self-organized PbSe quantum dots as a function of spacer layer thickness and growth temperature. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 80(1-3, SI):104-107, 2001. 5th Bi-Annual Meeting of the International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC 2000), HERALKION, GREECE, MAY 21-24, 2000. BibTeX

@article{ ISI:000168260800024,
	author = "Kang, HH and Salamanca-Riba, L and Pinczolits, M and Springholz, G and Holy, V and Bauer, G",
	title = "{TEM investigation of self-organized PbSe quantum dots as a function of spacer layer thickness and growth temperature}",
	journal = "{MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY}",
	year = "{2001}",
	volume = "{80}",
	number = "{1-3, SI}",
	pages = "{104-107}",
	month = "{MAR 22}",
	note = "{5th Bi-Annual Meeting of the International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC 2000), HERALKION, GREECE, MAY 21-24, 2000}",
	organization = "{Fdn Res \& Technol, Hellas FORTH; Minist Dev, Gen Secretariat Res \& Technol; Rutgers Univ; Univ Crete}",
	abstract = "{PbSe quantum dot/PbEuTe superlattices were grown on PbTe/BaF2(111) using molecular beam epitaxy. The spacer thickness was varied From 32.4 to 312 nm and the growth temperature was 335 or 380 degreesC. Three different dot stacking sequences form with either vertical, face-centered cubic like or disordered stacking sequence along the {[}111] growth direction. The different stacking sequence can be controlled by the thickness of the spacer layer and the growth temperature, The dots are fully strained and the shape of the dots is either triangular pyramids or dome like depending on the spacer layer thickness. An analysis of the lateral and vertical correlation of the dots as well as the size and shape of the buried dots with respect to spacer thickness and growth temperature is presented. (C) 2001 Elsevier Science B.V. All rights reserved.}",
	doi = "{10.1016/S0921-5107(00)00623-1}",
	issn = "{0921-5107}",
	researcherid-numbers = "{Salamanca-Riba, Lourdes/B-3785-2009}",
	times-cited = "{1}",
	unique-id = "{ISI:000168260800024}"
}

T Roch, V Holy, J Stangl, E Hoflinger, A Daniel, G Bauer, I Kegel, H Metzger, J Zhu, K Brunner and G Abstreiter. Structural investigations on self-organized Si/SiGe islands by grazing incidence small angle X-ray scattering. PHYSICA STATUS SOLIDI B-BASIC RESEARCH 224(1):241-245, Březen 2001. International Conference on Semiconductor Quantum Dots (QD2000), TECHN UNIV MUNICH, MUNICH, GERMANY, JUL 31-AUG 03, 2000. BibTeX

@article{ ISI:000167827200049,
	author = "Roch, T and Holy, V and Stangl, J and Hoflinger, E and Daniel, A and Bauer, G and Kegel, I and Metzger, H and Zhu, J and Brunner, K and Abstreiter, G",
	title = "{Structural investigations on self-organized Si/SiGe islands by grazing incidence small angle X-ray scattering}",
	journal = "{PHYSICA STATUS SOLIDI B-BASIC RESEARCH}",
	year = "{2001}",
	volume = "{224}",
	number = "{1}",
	pages = "{241-245}",
	month = "{MAR}",
	note = "{International Conference on Semiconductor Quantum Dots (QD2000), TECHN UNIV MUNICH, MUNICH, GERMANY, JUL 31-AUG 03, 2000}",
	abstract = "{We present a novel technique, based on grazing incidence small angle X-ray scattering (GISAXS)with which information on the shape and the lateral correlation of buried islands can be obtained. The GISAXS measurements were performed on Ge-rich islands grown by molecular beam epitaxy on (001) vicinal substrates with a miscut 2 degrees along the {[}100] direction. By varying the angle of incidence, GISAXS data sets were obtained for different information depths. These data were analysed quantitatively using a model based on the distorted wave Born approximation. In order to demonstrate the capabilities offered by this technique a 20 period Si/SiGe island multilayer sample was investigated before and after an annealing step at about 750 degreesC for 80 min. The GISAXS data show that the islands change their shape after annealing. For the top island layer a comparison of the GISAXS data with atomic force microscopy topographs was made.}",
	doi = "{10.1002/1521-3951(200103)224:1<241::AID-PSSB241>3.0.CO;2-B}",
	issn = "{0370-1972}",
	times-cited = "{6}",
	unique-id = "{ISI:000167827200049}"
}

JH Li, V Holy, Z Zhong, J Kulik, SC Moss, AG Norman, A Mascarenhas, JL Reno and DM Follstaedt. X-ray analysis of spontaneous lateral modulation in (InAs)(n)/(AlAs)(m) short-period superlattices. APPLIED PHYSICS LETTERS 78(2):219-221, 2001. BibTeX

@article{ ISI:000166212700028,
	author = "Li, JH and Holy, V and Zhong, Z and Kulik, J and Moss, SC and Norman, AG and Mascarenhas, A and Reno, JL and Follstaedt, DM",
	title = "{X-ray analysis of spontaneous lateral modulation in (InAs)(n)/(AlAs)(m) short-period superlattices}",
	journal = "{APPLIED PHYSICS LETTERS}",
	year = "{2001}",
	volume = "{78}",
	number = "{2}",
	pages = "{219-221}",
	month = "{JAN 8}",
	abstract = "{The lateral composition modulation in (InAs)(n)/(AlAs)(m) short-period superlattices was studied by means of synchrotron x-ray diffraction. By choosing specific diffraction vectors having a large component closely parallel to the modulation direction, we are able to observe a number of lateral satellite peaks around the zero-order short-period superlattice peak. A model, incorporating both composition and strain, is used to simulate the intensities of these satellites. Our results provide a quantitative fit and permit the evaluation of the composition amplitude. (C) 2001 American Institute of Physics.}",
	doi = "{10.1063/1.1338499}",
	issn = "{0003-6951}",
	researcherid-numbers = "{Norman, Andrew/F-1859-2010}",
	times-cited = "{10}",
	unique-id = "{ISI:000166212700028}"
}

M Jergel, A Anopchenko, S Luby, E Majkova, R Senderak and V Holy. Co/Si/W/Si multilayers with enhanced thermal stability for soft X-ray and UV optics. In R Delhez and EJ Mittemeijer (eds.). EPDIC 7: EUROPEAN POWDER DIFFRACTION, PTS 1 AND 2 378-3(Part 1&2). 2001, 364-369. 7th European Powder Diffraction Conference (EPDIC 7), BARCELONA, SPAIN, MAY 20-23, 2000. BibTeX

@inproceedings{ ISI:000172514200058,
	author = "Jergel, M and Anopchenko, A and Luby, S and Majkova, E and Senderak, R and Holy, V",
	editor = "{Delhez, R and Mittemeijer, EJ}",
	title = "{Co/Si/W/Si multilayers with enhanced thermal stability for soft X-ray and UV optics}",
	booktitle = "{EPDIC 7: EUROPEAN POWDER DIFFRACTION, PTS 1 AND 2}",
	series = "{MATERIALS SCIENCE FORUM}",
	year = "{2001}",
	volume = "{378-3}",
	number = "{Part 1\&2}",
	pages = "{364-369}",
	note = "{7th European Powder Diffraction Conference (EPDIC 7), BARCELONA, SPAIN, MAY 20-23, 2000}",
	organization = "{PHILIPS Analyt BV; BRUKER Analyt X Ray Syst GmbH; European Commiss, DGXII, Human Potential Programme; Int Ctr Diffract Data; Int Union Crystallog; Appl Res Labs; Minist Educ \& Culture; Consefo Superior Investigac Cient; Univ Barcelona}",
	abstract = "{Two Co/Si/W/Si multilayers with 15 nm (ML1) and 19 nm (ML2) nominal periods were prepared by UHV electron beam evaporation onto Si(100) wafers. Except for Co layers in ML2, the layers were amorphous after deposition. The evolution of multilayer stack and interface behaviour on rapid thermal annealing (RTA) were studied by specular X-ray reflectivity and grazing incidence diffuse scattering which were evaluated within Fresnel formalism and distorted-wave Born approximation, respectively. The thermal stability of both multilayers is governed by intermixing and interdiffusion starting at Co/Si interfaces and by silicide crystallization above 773 K. The lateral correlation length of the interfaces increases and their strong vertical correlation gets weaker and dependent on the interface roughness frequency with proceeding RTA. The layered structure collapses on the 1273K/30s RTA in ML1 which is by 250 K higher than for a W/Si multilayer. The interface behaviour is similar in ML2, however, the layered structure is heavily disturbed already on the 1023K/30s RTA due to a larger volume reduction at silicide crystallization and faster diffusion.}",
	issn = "{0255-5476}",
	isbn = "{0-87849-886-9}",
	researcherid-numbers = "{Anopchenko, Oleksiy/D-9478-2011}",
	times-cited = "{0}",
	unique-id = "{ISI:000172514200058}"
}

G Springholz, M Pinczolits, V Holy, S Zerlauth, I Vavra and G Bauer. Vertical and lateral ordering in self-organized quantum dot superlattices. PHYSICA E 9(1):149-163, Leden 2001. 11th International Winterschool on New Developments in Solid State Physics, MAUTERNDORF, AUSTRIA, FEB 21-25, 2000. BibTeX

@article{ ISI:000167345400021,
	author = "Springholz, G and Pinczolits, M and Holy, V and Zerlauth, S and Vavra, I and Bauer, G",
	title = "{Vertical and lateral ordering in self-organized quantum dot superlattices}",
	journal = "{PHYSICA E}",
	year = "{2001}",
	volume = "{9}",
	number = "{1}",
	pages = "{149-163}",
	month = "{JAN}",
	note = "{11th International Winterschool on New Developments in Solid State Physics, MAUTERNDORF, AUSTRIA, FEB 21-25, 2000}",
	organization = "{Bruker Analytik GmbH; Omicron Vakuumphys GmbH; Oxford Instruments GmbH; Pfeiffer Vacuum Austri GmbH}",
	abstract = "{The formation of vertically and laterally ordered dot superstructures in self-organized quantum dot superlattices is described. The ordering is based on the long-range elastic interactions between the strained self-assembled quantum dots, providing a driving force for a spatially correlated dot nucleation. For various materials systems, different types of ordered structures have been observed, ranging from vertically aligned dot superlattices for Si/Ge or III-V semiconductors to a fee-like ABCABC... stacking in IV-VI materials. It is shown that the elastic anisotropy of the spacer material plays a crucial role in this self-organization process. In particular, for materials with very high elastic anisotropy and growth orientations parallel to an elastically soft direction, layer-to-layer dot correlations inclined to the growth direction can be formed. This is shown to he particularly effective for inducing a lateral ordering of the dots within the growth plane, which can lead to a significant narrowing of the dot size dispersion. These conclusions are also supported by Monte Carlo growth simulations. (C) 2001 Elsevier Science B.V. All rights reserved.}",
	doi = "{10.1016/S1386-9477(00)00189-2}",
	issn = "{1386-9477}",
	times-cited = "{41}",
	unique-id = "{ISI:000167345400021}"
}

G Springholz, M Pinczolits, P Mayer, A Raab, R Lechner, V Holy, G Bauer, T Schwarzl, W Heiss, M Aigle, H Pascher, H Kang and L Salamanca-Riba. Self-assembled PbSe quantum dot superlattices: Ordering and device applications. In PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS 2. 2001, 161-164. 10th International Conference on Narrow Gap Semiconductors and Related Small Energy Phenomena, Physics and Applications (NGS10), KANAZAWA, JAPAN, MAY 27-31, 2001. BibTeX

@inproceedings{ ISI:000178110700048,
	author = "Springholz, G and Pinczolits, M and Mayer, P and Raab, A and Lechner, R and Holy, V and Bauer, G and Schwarzl, T and Heiss, W and Aigle, M and Pascher, H and Kang, H and Salamanca-Riba, L",
	book-group-author = "{IPAP IPAP}",
	title = "{Self-assembled PbSe quantum dot superlattices: Ordering and device applications}",
	booktitle = "{PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS}",
	series = "{IPAP CONFERENCE SERIES}",
	year = "{2001}",
	volume = "{2}",
	pages = "{161-164}",
	note = "{10th International Conference on Narrow Gap Semiconductors and Related Small Energy Phenomena, Physics and Applications (NGS10), KANAZAWA, JAPAN, MAY 27-31, 2001}",
	organization = "{Kanazawa City; Minist Educ, Culture, Sports, Sci \& Technol; Japan Soc Promot Sci; Izumi Sci \& Technol Fdn; Inoue Fdn Sci; Ishikawa Prefecture; Japan Adv Inst Sci \& Technol}",
	abstract = "{Self-organized lateral and vertical ordering in PbSe/Pb1-xEuxTe quantum dot superlattices results in the formation of three differently ordered dot phases. For thin PbEuTe spacers, the dots are vertical aligned with a weak hexagonal lateral ordering, for intermediate spacer thicknesses, a fcc-stacking with nearly perfect hexagonal lateral ordering is observed, and for thick spacers, uncorrelated and disordered superlattices are formed. The experimental data can be represented in a phase diagram, showing that in the different regimes a qualitatively different scaling behavior of the lateral dot distances versus spacer thickness occurs. For applications, we have inserted the PbSe quantum dot superlattice into the active region of a EuTe/PbEuTe vertical microcavity structure. From this structure, narrow laser emission at 4.2-3.9 mum induced by optical pumping is achieved at temperatures up to 90 K.}",
	isbn = "{4-900526-14-2}",
	researcherid-numbers = "{Heiss, Wolfgang/F-1200-2011}",
	times-cited = "{0}",
	unique-id = "{ISI:000178110700048}"
}

G Springholz, M Pinczolits, V Holy, P Mayer, G Bauer, HH Kang and L Salamanca-Riba. Controlling of lateral and vertical order in self-organized PbSe quantum dot superlattices. In N Miura and T Ando (eds.). PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II 87. 2001, 355-358. 25th International Conference on the Physics of Semiconductors (ICPS25), OSAKA, JAPAN, SEP 17-22, 2000. BibTeX

@inproceedings{ ISI:000171592800163,
	author = "Springholz, G and Pinczolits, M and Holy, V and Mayer, P and Bauer, G and Kang, HH and Salamanca-Riba, L",
	editor = "{Miura, N and Ando, T}",
	title = "{Controlling of lateral and vertical order in self-organized PbSe quantum dot superlattices}",
	booktitle = "{PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II}",
	series = "{SPRINGER PROCEEDINGS IN PHYSICS}",
	year = "{2001}",
	volume = "{87}",
	pages = "{355-358}",
	note = "{25th International Conference on the Physics of Semiconductors (ICPS25), OSAKA, JAPAN, SEP 17-22, 2000}",
	organization = "{Int Union Pure \& Appl Phys; Sci Council Japan; Phys Soc Japan; Japan Soc Appl Phys; Osaka Prefecture; Osaka City}",
	abstract = "{Self-organized lateral and vertical ordering in PbSe/Pb1-xEuxTe quantum dot superlattices is investigated as a function of spacer thickness. From transmission electron and atomic force microscopy we find the occurrence of three different ordered dot structure: (a) for small spacer thicknesses, the dots are vertically aligned with weak hexagonal ordering tendency, (b) for intermediate spacer thicknesses, a well defined trigonal dot lattice with fcc-stacking and nearly perfect lateral ordering is formed, and for thick spacers (c), uncorrelated and laterally disordered superlattices are obtained. By finite element calculations, the formation of these different dot correlations is explained by the strong changes of the surface strain fields as a function of spacer thickness. Apart from the marked differences in the ordering tendency, also a qualitatively different scaling behavior of the lateral dot distances versus spacer thickness is observed in the different regimes.}",
	issn = "{0930-8989}",
	isbn = "{3-540-41778-8}",
	times-cited = "{0}",
	unique-id = "{ISI:000171592800163}"
}

J Stangl, V Holy, A Daniel, T Roch, G Bauer, TH Metzger, J Zhu, K Brunner and G Abstreiter. Shape and size of buried SiGe islands. In N Miura and T Ando (eds.). PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II 87. 2001, 363-364. 25th International Conference on the Physics of Semiconductors (ICPS25), OSAKA, JAPAN, SEP 17-22, 2000. BibTeX

@inproceedings{ ISI:000171592800166,
	author = "Stangl, J and Holy, V and Daniel, A and Roch, T and Bauer, G and Metzger, TH and Zhu, J and Brunner, K and Abstreiter, G",
	editor = "{Miura, N and Ando, T}",
	title = "{Shape and size of buried SiGe islands}",
	booktitle = "{PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II}",
	series = "{SPRINGER PROCEEDINGS IN PHYSICS}",
	year = "{2001}",
	volume = "{87}",
	pages = "{363-364}",
	note = "{25th International Conference on the Physics of Semiconductors (ICPS25), OSAKA, JAPAN, SEP 17-22, 2000}",
	organization = "{Int Union Pure \& Appl Phys; Sci Council Japan; Phys Soc Japan; Japan Soc Appl Phys; Osaka Prefecture; Osaka City}",
	abstract = "{We present a method to obtain the shape and the lateral correlation properties of buried islands from grazing incidence small angle x-ray scattering experiments. From reciprocal space maps recorded for various penetration depths, the island parameters axe obtained by comparison with simulations based on distorted wave Born approximation. The method is demonstrated on self-organized SiGe islands in a Si/SiGe multilayer. It is possible to detect different shapes of the islands at the sample surface and those embedded in the multilayer.}",
	issn = "{0930-8989}",
	isbn = "{3-540-41778-8}",
	times-cited = "{0}",
	unique-id = "{ISI:000171592800166}"
}

J Stangl, V Holy, T Roch, A Daniel, G Bauer, J Zhu, K Brunner and G Abstreiter. Grazing incidence small-angle x-ray scattering study of buried and free-standing SiGe islands in a SiGe/Si superlattice. PHYSICAL REVIEW B 62(11):7229-7236, 2000. BibTeX

@article{ ISI:000089413500070,
	author = "Stangl, J and Holy, V and Roch, T and Daniel, A and Bauer, G and Zhu, J and Brunner, K and Abstreiter, G",
	title = "{Grazing incidence small-angle x-ray scattering study of buried and free-standing SiGe islands in a SiGe/Si superlattice}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{2000}",
	volume = "{62}",
	number = "{11}",
	pages = "{7229-7236}",
	month = "{SEP 15}",
	abstract = "{We present a method to interpret reciprocal-space maps recorded in grazing-incidence small-angle x-ray scattering geometry to obtain the shape and the lateral correlation properties of buried islands. From the maps, which have been recorded for various penetration depths, the autocorrelation function is calculated, from which the island parameters are obtained by comparison with simulations based on the distorted-wave Born approximation. As a demonstration of the sensitivity of the method, measurements on self-organized SiGe islands in a Si/SiGe multilayer have been performed. It was possible to detect different shapes of the islands at the sample surface and those embedded in the multilayer. For a comparison with atomic force microscopy, we employ the same method to analyze images of the islands at the top surface.}",
	doi = "{10.1103/PhysRevB.62.7229}",
	issn = "{1098-0121}",
	times-cited = "{37}",
	unique-id = "{ISI:000089413500070}"
}

M Jergel, A Anopchenko, E Majkova, M Spasova, S Luby, V Holy, M Brunel, A Luches and M Martino. Structure of Ag/Co multilayers on excimer laser irradiation. THIN SOLID FILMS 373(1-2):216-221, 2000. 11th International Conference on Thin Films (ICTF-11), CANCUN, MEXICO, AUG 30-SEP 03, 1999. BibTeX

@article{ ISI:000090045900048,
	author = "Jergel, M and Anopchenko, A and Majkova, E and Spasova, M and Luby, S and Holy, V and Brunel, M and Luches, A and Martino, M",
	title = "{Structure of Ag/Co multilayers on excimer laser irradiation}",
	journal = "{THIN SOLID FILMS}",
	year = "{2000}",
	volume = "{373}",
	number = "{1-2}",
	pages = "{216-221}",
	month = "{SEP 3}",
	note = "{11th International Conference on Thin Films (ICTF-11), CANCUN, MEXICO, AUG 30-SEP 03, 1999}",
	abstract = "{The structure of Ag/Co multilayers (MLs) on laser irradiation is studied. Three MLs with different Ag layer thicknesses, denoted according to the nominal values (nm) as Ag2Co1, Ag4Co1, and Ag6Co1, were exposed to XeCl excimer laser pulses of the fluences (0.1-0.25) J cm(-2) for (1-200) times. The structure was examined by X-ray diffraction, hard X-ray reflectivity, and diffuse scattering measurements at grazing incidence. The polycrystalline face-centered cubic structure of Ag layers with random orientation of the grains was found in as-deposited Ag2Co1 and Ag6Co1. The formation of a discontinuous ML by grain boundary diffusion of Ag into Co layers induced by laser treatment was evidenced in Ag6Co1 while the temperature window for diffusion is too narrow for completing such a process in Ag2Co1. The granular structure formed due to the melting of Ag layers has no direct relation to the original ML. A strong texture of Ag layers found in Ag4Co1 stabilizes the as-deposited structure even when the melting of Ag layers starts. Different structural evolution of three samples under study is responsible for their different behaviour of giant magneto resistance on laser irradiation observed previously. (C) 2000 Elsevier Science S.A. All rights reserved.}",
	doi = "{10.1016/S0040-6090(00)01138-X}",
	issn = "{0040-6090}",
	researcherid-numbers = "{Anopchenko, Oleksiy/D-9478-2011}",
	times-cited = "{2}",
	unique-id = "{ISI:000090045900048}"
}

J Stangl, T Roch, V Holy, M Pinczolits, G Springholz, G Bauer, I Kegel, TH Metzger, J Zhu, K Brunner, G Abstreiter and D Smilgies. Strain-induced self-organized growth of nanostructures: From step bunching to ordering in quantum dot superlattices. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 18(4):2187-2192, 2000. 27th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-27), SALT LAKE CITY, UT, JAN 16-20, 2000. BibTeX

@article{ ISI:000088834400068,
	author = "Stangl, J and Roch, T and Holy, V and Pinczolits, M and Springholz, G and Bauer, G and Kegel, I and Metzger, TH and Zhu, J and Brunner, K and Abstreiter, G and Smilgies, D",
	title = "{Strain-induced self-organized growth of nanostructures: From step bunching to ordering in quantum dot superlattices}",
	journal = "{JOURNAL OF VACUUM SCIENCE \& TECHNOLOGY B}",
	year = "{2000}",
	volume = "{18}",
	number = "{4}",
	pages = "{2187-2192}",
	month = "{JUL-AUG}",
	note = "{27th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-27), SALT LAKE CITY, UT, JAN 16-20, 2000}",
	organization = "{Amer Vacuum Soc; USA, Off Res; USN, Off Res}",
	abstract = "{We have investigated the lateral ordering of dot positions in a SiGe/Si multilayer and, for comparison, in a PbSe/PbEuTe dot superlattice using grazing incidence small-angle scattering. The two samples represent two different approaches to achieve an enhanced ordering of dot positions in semiconductor heterostructures: in the SiGe/Si sample, step bunching in the multilayer grown on a vicinal Si substrate was exploited to reduce the fluctuations in lateral dot distances. In the PbSe/PbEuTe sample the strong elastic anisotropy leads to the formation of a three-dimensional dot ``lattice,{''} exhibiting a very narrow distribution of dot distances. (C) 2000 American Vacuum Society. {[}S0734-211X(00)00404-2].}",
	doi = "{10.1116/1.1303736}",
	issn = "{1071-1023}",
	times-cited = "{20}",
	unique-id = "{ISI:000088834400068}"
}

S Rubini, B Bonanni, E Pelucchi, A Franciosi, A Garulli, A Parisini, Y Zhuang, G Bauer and V Holy. ZnSe/CdTe/ZnSe heterostructures. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 18(4):2263-2270, 2000. 27th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-27), SALT LAKE CITY, UTAH, JAN 16-20, 2000. BibTeX

@article{ ISI:000088834400079,
	author = "Rubini, S and Bonanni, B and Pelucchi, E and Franciosi, A and Garulli, A and Parisini, A and Zhuang, Y and Bauer, G and Holy, V",
	title = "{ZnSe/CdTe/ZnSe heterostructures}",
	journal = "{JOURNAL OF VACUUM SCIENCE \& TECHNOLOGY B}",
	year = "{2000}",
	volume = "{18}",
	number = "{4}",
	pages = "{2263-2270}",
	month = "{JUL-AUG}",
	note = "{27th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-27), SALT LAKE CITY, UTAH, JAN 16-20, 2000}",
	organization = "{Amer Vacuum Soc; USA, Off Res; USN, Off Res}",
	abstract = "{Epitaxial ZnSe/CdTe/ZnSe heterostructures were successfully fabricated by molecular beam epitaxy on GaAs(001) wafers despite the large in-plane lattice mismatch (14.3\%) between the two II-VI materials. X-ray reciprocal space maps and selected area diffraction results indicate single-phase, (111)-oriented growth of CdTe onto the lower ZnSe(001) cladding layer, and single-phase, (111)-oriented growth of the topmost ZnSe layer, with a small inhomogeneous residual strain within the CdTe layer. Cross-sectional transmission electron micrographs reveal a distribution of rotational microtwins within the (111)-oriented layers near each interface. The low-temperature near-band-edge photoluminescence from the CdTe layer is free-exciton related, and exhibits a linewidth of only 5-6 meV. (C) 2000 American Vacuum Society. {[}S0734-211X(00)05904-7].}",
	doi = "{10.1116/1.1305921}",
	issn = "{1071-1023}",
	researcherid-numbers = "{Schaff, William/B-5839-2009 Rubini, Silvia/C-8369-2012 bonanni, beatrice/G-7827-2012 Pelucchi, Emanuele/B-2744-2009 Parisini, Andrea/C-4028-2013}",
	times-cited = "{0}",
	unique-id = "{ISI:000088834400079}"
}

M Jergel, A Anopchenko, V Holy, E Majkova, S Luby and R Senderak. Interface study of a Co/Si/W/Si multilayer with enhanced thermal stability. JOURNAL OF APPLIED CRYSTALLOGRAPHY 33(1, Part 3):753-757, 2000. XIth International Conference on Small-Angle Scattering, BROOKHAVEN NATL LAB, LONG ISL CITY, NEW YORK, MAY 17-20, 1999. BibTeX

@article{ ISI:000087248600079,
	author = "Jergel, M and Anopchenko, A and Holy, V and Majkova, E and Luby, S and Senderak, R",
	title = "{Interface study of a Co/Si/W/Si multilayer with enhanced thermal stability}",
	journal = "{JOURNAL OF APPLIED CRYSTALLOGRAPHY}",
	year = "{2000}",
	volume = "{33}",
	number = "{1, Part 3}",
	pages = "{753-757}",
	month = "{JUN 1}",
	note = "{XIth International Conference on Small-Angle Scattering, BROOKHAVEN NATL LAB, LONG ISL CITY, NEW YORK, MAY 17-20, 1999}",
	organization = "{NatDOE, Off Basic Energy Sci; Int Union Crystallog; Intense Pulsed Neutron Sourch; Neutron Scattering Soc Amer; Stanford Synchrotron Radiat Lab; Oak Ridge Natl Lab; Synchrotron Radiat Res Ctr; Exxon Res \& Engn Co; Natl Ctr Neutron Res; USAF Res Lab; Dow Chem Co; Photon Factory; Cornell High energy Synchrotron Source; DSM Res; Brookhaven Sci Associates; BNL Biol Dept; BNL Phys Dept}",
	abstract = "{The interface evolution in an amorphous Co/Si/W/Si multilayer (ML) of 150 Angstrom nominal period processed by rapid thermal annealing (RTA) in the temperature range of 523-1273 K for 5-30 s was studied by X-ray reflectivity and diffuse scattering measurements at CuKalpha 1 wavelength. The results were simulated within the Fresnel theory and the distorted-wave Born approximation. The interdiffusion and intermixing induced by RTA starts at Co/Si interfaces and takes place via an interface shift without a considerable increase of the interface roughness up to the 873K/30s RTA. A strong conformality of the interface profiles, stretching originally over the entire ML thickness in the whole interval of the interface roughness frequencies covered by the experimental scans, is reduced to about 2 ML periods. After the 1023K/30s RTA, the interface morphology is controlled by the crystallization of Co and W silicide phases leading to interface roughening. The vertical interface correlation is sensititve to the interface roughness frequency. A fast diffusion along grain boundaries leads to a complete interdiffusion and collapse of the ML on 1273K/30s RTA. Compared with a W/Si ML studied previously, the incorporation of Co layers into the ML stack enhanced the thermal stability by about 250 K. Some consequences for optical applications are discussed.}",
	doi = "{10.1107/S0021889800099842}",
	issn = "{0021-8898}",
	researcherid-numbers = "{Anopchenko, Oleksiy/D-9478-2011}",
	times-cited = "{2}",
	unique-id = "{ISI:000087248600079}"
}

V Holy, J Stangl, G Springholz, M Pinczolits, G Bauer, I Kegel and TH Metzger. Lateral and vertical ordering of self-assembled PbSe quantum dots studied by high-resolution X-ray diffraction. PHYSICA B 283(1-3):65-68, Červen 2000. 6th International Conference on X-ray and Neutron Scattering, LEEWENHORST CONGRESS CTR, NOORDWIJKERHOUT, NETHERLANDS, SEP 12-17, 1999. BibTeX

@article{ ISI:000086635300015,
	author = "Holy, V and Stangl, J and Springholz, G and Pinczolits, M and Bauer, G and Kegel, I and Metzger, TH",
	title = "{Lateral and vertical ordering of self-assembled PbSe quantum dots studied by high-resolution X-ray diffraction}",
	journal = "{PHYSICA B}",
	year = "{2000}",
	volume = "{283}",
	number = "{1-3}",
	pages = "{65-68}",
	month = "{JUN}",
	note = "{6th International Conference on X-ray and Neutron Scattering, LEEWENHORST CONGRESS CTR, NOORDWIJKERHOUT, NETHERLANDS, SEP 12-17, 1999}",
	organization = "{Leeuwenhorst Congress Ctr; Bruker AXS; Delft Univ, Interfacultair Reactor Inst; Koninklijke Nederlandse Akad VanWetenschappen; Koninklijke Nederlandse Chem Vereniging; Philips Analyt; Stichting Phys}",
	abstract = "{Lateral and vertical ordering of self-assembled PbSe quantum dots in PbSe/PbEuTe superlattices has been investigated by high-resolution X-ray diffraction. The correlations of the dot positions were determined from the widths of the maxima of the scattered intensity in reciprocal space. From the dependence of these widths on the scattering vector we determined the degree of the lateral and vertical position correlation. It has been found that these correlations sensitively depend on the superlattice period. (C) 2000 Elsevier Science B.V. All rights reserved.}",
	doi = "{10.1016/S0921-4526(99)01893-1}",
	issn = "{0921-4526}",
	times-cited = "{12}",
	unique-id = "{ISI:000086635300015}"
}

Y Zhuang, U Pietsch, J Stangl, V Holy, N Darowski, J Grenzer, S Zerlauth, F Schaffler and G Bauer. In-plane strain and shape analysis of Si/SiGe nanostructures by grazing incidence diffraction. PHYSICA B 283(1-3):130-134, Červen 2000. 6th International Conference on X-ray and Neutron Scattering, LEEWENHORST CONGRESS CTR, NOORDWIJKERHOUT, NETHERLANDS, SEP 12-17, 1999. BibTeX

@article{ ISI:000086635300027,
	author = "Zhuang, Y and Pietsch, U and Stangl, J and Holy, V and Darowski, N and Grenzer, J and Zerlauth, S and Schaffler, F and Bauer, G",
	title = "{In-plane strain and shape analysis of Si/SiGe nanostructures by grazing incidence diffraction}",
	journal = "{PHYSICA B}",
	year = "{2000}",
	volume = "{283}",
	number = "{1-3}",
	pages = "{130-134}",
	month = "{JUN}",
	note = "{6th International Conference on X-ray and Neutron Scattering, LEEWENHORST CONGRESS CTR, NOORDWIJKERHOUT, NETHERLANDS, SEP 12-17, 1999}",
	organization = "{Leeuwenhorst Congress Ctr; Bruker AXS; Delft Univ, Interfacultair Reactor Inst; Koninklijke Nederlandse Akad VanWetenschappen; Koninklijke Nederlandse Chem Vereniging; Philips Analyt; Stichting Phys}",
	abstract = "{Surface-sensitive X-ray grazing incidence diffraction (GID) was used to investigate the elastic strain relaxation in laterally periodic Si/SiGe wires, oriented along the {[}(1) over bar 1 0] direction, fabricated by holographic lithography and reactive ion etching from a 10-period multilayer. Using transverse and longitudinal scans, i.e. with the diffraction vector parallel and perpendicular to the wire direction information on the shape and the strain status were obtained from measurements at different incidence and exit angles. For the simulation a modified effective refractive index profile, i.e. a different average electron density for the etched and the non-etched a ire pattern was taken into account. Using data from finite element calculations of the strain fields. a simulation based on DWBA is in good agreement with the experimental data. (C) 2000 Published by Elsevier Science B.V. All rights reserved.}",
	doi = "{10.1016/S0921-4526(99)01905-5}",
	issn = "{0921-4526}",
	times-cited = "{4}",
	unique-id = "{ISI:000086635300027}"
}

G Springholz, M Pinczolits, V Holy, P Mayer, K Wiesauer, T Roch and G Bauer. Self-organized growth of three-dimensional IV-VI semiconductor quantum dot crystals with fcc-like vertical stacking and tunable lattice constant. SURFACE SCIENCE 454:657-670, 2000. 18th European Conference on Surface Science (ECOSS 18), VIENNA UNIV TECHNOL, VIENNA, AUSTRIA, SEP 21-24, 1999. BibTeX

@article{ ISI:000087766200126,
	author = "Springholz, G and Pinczolits, M and Holy, V and Mayer, P and Wiesauer, K and Roch, T and Bauer, G",
	title = "{Self-organized growth of three-dimensional IV-VI semiconductor quantum dot crystals with fcc-like vertical stacking and tunable lattice constant}",
	journal = "{SURFACE SCIENCE}",
	year = "{2000}",
	volume = "{454}",
	pages = "{657-670}",
	month = "{MAY 20}",
	note = "{18th European Conference on Surface Science (ECOSS 18), VIENNA UNIV TECHNOL, VIENNA, AUSTRIA, SEP 21-24, 1999}",
	organization = "{Inst Allgemeine Phys}",
	abstract = "{Heteroepitaxial growth of highly lattice-mismatched semiconductor layers has evolved as a novel method for direct synthesis of self-assembled quantum dots based on the Stranski-Krastanov growth mode. In this growth mode, nanoscale three-dimensional (3D) islands are spontaneously formed on the epitaxial surface once the layer thickness exceeds a certain critical coverage. In multilayer structures, the interaction of the strained islands via their long-range elastic strain fields may lead to a vertical and lateral ordering of the dots. Here, it is shown that the elastic anisotropy and the growth orientation play a crucial role for this self-organization process. In particular, for(111)-oriented IV-VI semiconductor (PbSe/Pb1-xEuxTe) multilayers, the direction of the interlayer dot correlations is shown to be inclined to the surface normal. This leads to a fee-like ABCABC... vertical dot stacking sequence, which is particularly effective for inducting a lateral ordering of the dots as well. As a result, large domains of trigonally ordered 3D quantum dot crystals are formed, and their lattice constant can be tuned continuously just by changing the thickness of the spacer between the quantum dot layers. (C) 2000 Elsevier Science B.V. All rights reserved.}",
	doi = "{10.1016/S0039-6028(00)00162-X}",
	issn = "{0039-6028}",
	researcherid-numbers = "{Schaff, William/B-5839-2009 Wiesauer, Karin/D-3751-2013}",
	times-cited = "{15}",
	unique-id = "{ISI:000087766200126}"
}

G Springholz, M Pinczolits, P Mayer, V Holy, G Bauer, HH Kang and L Salamanca-Riba. Tuning of vertical and lateral correlations in self-organized PbSe/Pb1-xEuxTe quantum dot superlattices. PHYSICAL REVIEW LETTERS 84(20):4669-4672, 2000. BibTeX

@article{ ISI:000086997100039,
	author = "Springholz, G and Pinczolits, M and Mayer, P and Holy, V and Bauer, G and Kang, HH and Salamanca-Riba, L",
	title = "{Tuning of vertical and lateral correlations in self-organized PbSe/Pb1-xEuxTe quantum dot superlattices}",
	journal = "{PHYSICAL REVIEW LETTERS}",
	year = "{2000}",
	volume = "{84}",
	number = "{20}",
	pages = "{4669-4672}",
	month = "{MAY 15}",
	abstract = "{The tuning of lateral and vertical correlations in self-organized PbSe/Pb1-xEuxTe quantum dot superlattices by changes in the spacer thicknesses is demonstrated and shown to be due to finite size effects in the dot-dot interactions. As a consequence, different dot arrangements such as vertically aligned dot columns or fee stacking are obtained for a single material system without changes in growth conditions. The different dot superstructures are shown to exhibit a different scaling behavior of the lateral versus vertical dot separation, as well as a different evolution of dot sizes and shapes.}",
	doi = "{10.1103/PhysRevLett.84.4669}",
	issn = "{0031-9007}",
	researcherid-numbers = "{Salamanca-Riba, Lourdes/B-3785-2009}",
	times-cited = "{117}",
	unique-id = "{ISI:000086997100039}"
}

G Springholz, J Stangl, M Pinczolits, V Holy, P Mikulik, P Mayer, K Wiesauer, G Bauer, D Smilgies, HH Kang and L Salamanca-Riba. Nearly perfect 3D ordering in IV-VI quantum dot superlattices with ABCABC ... vertical stacking sequence. PHYSICA E 7(3-4):870-875, Květen 2000. 9th International Conference on Modulated Semiconductor Structures (MSS9), FUKUOKA, JAPAN, JUL 12-16, 1999. BibTeX

@article{ ISI:000087358100119,
	author = "Springholz, G and Stangl, J and Pinczolits, M and Holy, V and Mikulik, P and Mayer, P and Wiesauer, K and Bauer, G and Smilgies, D and Kang, HH and Salamanca-Riba, L",
	title = "{Nearly perfect 3D ordering in IV-VI quantum dot superlattices with ABCABC ... vertical stacking sequence}",
	journal = "{PHYSICA E}",
	year = "{2000}",
	volume = "{7}",
	number = "{3-4}",
	pages = "{870-875}",
	month = "{MAY}",
	note = "{9th International Conference on Modulated Semiconductor Structures (MSS9), FUKUOKA, JAPAN, JUL 12-16, 1999}",
	organization = "{Japan Soc Appl Phys}",
	abstract = "{Self-organization of PbSe islands in epitaxial PbSe/Pb1-xEuxTe superlattices is shown to result in a spontaneous three-dimensional ordering of the PbSe dots in a trigonal lattice with a fee-like ABCABC vertical stacking sequence. From X-ray diffraction reciprocal space maps, the interlayer correlation direction of the PbSe dots is found to be inclined by 40 degrees with respect to the {[}111] surface normal. Peak profile measurements in the reciprocal space maps yield a coherence length of the ordered regions of 300 +/- 100 nm in the lateral, and of 530 +/- 50 nm in the vertical direction. This corresponds to ordered regions that contain as many as 250 PbSe dots. (C) 2000 Elsevier Science B.V. All rights reserved.}",
	doi = "{10.1016/S1386-9477(00)00079-5}",
	issn = "{1386-9477}",
	researcherid-numbers = "{Mikulik, Petr/E-1791-2012 Wiesauer, Karin/D-3751-2013 Salamanca-Riba, Lourdes/B-3785-2009}",
	times-cited = "{8}",
	unique-id = "{ISI:000087358100119}"
}

J Sobota, G Sorensen, H Jensen, J Kubena and V Holy. Temperature stability of C-N/NbN nanocomposite multilayers. DIAMOND AND RELATED MATERIALS 9(3-6):587-591, 2000. 10th European Conference on Diamond, Diamond-Like Materials, Nitrides and Silicon Carbide (Diamond 1999), PRAGUE, CZECH REPUBLIC, SEP 12-17, 1999. BibTeX

@article{ ISI:000087382400071,
	author = "Sobota, J and Sorensen, G and Jensen, H and Kubena, J and Holy, V",
	title = "{Temperature stability of C-N/NbN nanocomposite multilayers}",
	journal = "{DIAMOND AND RELATED MATERIALS}",
	year = "{2000}",
	volume = "{9}",
	number = "{3-6}",
	pages = "{587-591}",
	month = "{APR-MAY}",
	note = "{10th European Conference on Diamond, Diamond-Like Materials, Nitrides and Silicon Carbide (Diamond 1999), PRAGUE, CZECH REPUBLIC, SEP 12-17, 1999}",
	organization = "{AIXTRON; Daimler-Chrysler; Elsevier Sci}",
	abstract = "{Nanostructured C-N/NbNx coatings were deposited by radio-frequency magnetron sputtering when two cathodes of carbon and niobium were operating concurrently in an argon/nitrogen mixture in the side-by-side configuration. The composite coatings, typically 1-3 mu m thick, were deposited at a substrate temperature not exceeding 200 degrees C. Various substrates such as highly polished tungsten carbide and silicon were used. The friction coefficient and wear rate for Si3N4 and 52100 steel balls were measured at room temperature and after heat treatment of the coatings to 500 degrees C in air, on a reciprocating ball-on-disc tribometer. We investigated the structure of the multilayer by means of low-angle X-ray reflection and high-angle X-ray diffraction after isochronal annealing at temperatures from room temperature to 500 degrees C in air. From the low-angle reflection we determined the multilayer period and thickness of a surface oxide layer. The high-angle diffraction data revealed the polycrystalline structure of the multilayer, which has a grain sine comparable to the multilayer period. Multilayer nanocomposites can be deposited at low substrate temperatures in conventional physical vapour deposition coaters and can offer a number of prospective industrial applications. (C) 2000 Elsevier Science S.A. All rights reserved.}",
	doi = "{10.1016/S0925-9635(99)00301-5}",
	issn = "{0925-9635}",
	researcherid-numbers = "{Sobota, Jaroslav/D-5192-2012}",
	times-cited = "{3}",
	unique-id = "{ISI:000087382400071}"
}

M Jergel, V Holy, E Majkova, S Luby, R Senderak, HJ Stock, D Menke, U Kleineberg and U Heinzmann. {Effect of ion-beam polishing on the interface quality in a Ti/C multilayer mirror for “water window”}. In R Delhez and EJ Mittemeijer (eds.). EUROPEAN POWDER DIFFRACTION, PTS 1 AND 2 321-3(Part 1&2). 2000, 184-189. 6th European Powder Diffraction Conference, TECH UNIV, BUDAPEST, HUNGARY, AUG 22-25, 1998. BibTeX

@inproceedings{ ISI:000088849300030,
	author = "Jergel, M and Holy, V and Majkova, E and Luby, S and Senderak, R and Stock, HJ and Menke, D and Kleineberg, U and Heinzmann, U",
	editor = "{Delhez, R and Mittemeijer, EJ}",
	title = "{Effect of ion-beam polishing on the interface quality in a Ti/C multilayer mirror for ``water window{''}}",
	booktitle = "{EUROPEAN POWDER DIFFRACTION, PTS 1 AND 2}",
	series = "{MATERIALS SCIENCE FORUM}",
	year = "{2000}",
	volume = "{321-3}",
	number = "{Part 1\&2}",
	pages = "{184-189}",
	note = "{6th European Powder Diffraction Conference, TECH UNIV, BUDAPEST, HUNGARY, AUG 22-25, 1998}",
	organization = "{Philips Analyt BV; Bruker Analyt X Ray Syst GmbH; Int Ctr Diffract Data; Int Union Crystallog; Hungarian Comm Tech Dev; Hungarian Acad Sci; GE Lighting Tungsram Rt; Chinoin Rt}",
	abstract = "{The effect of Ar+ ion-beam polishing after each layer deposition on e-beam evaporated Ti/C multilayer (87 periods) with the nominal period of 2.8 nm for imaging in the soft X-ray ``water window{''} region was studied by the hard X-ray specular reflectivity and interface diffuse scattering at grazing incidence. The results were evaluated using Fresnel optical algorithm and a semikinematical modification of the distorted-wave Born approximation to extract and compare the basic interface parameters. In addition to an extremely low interface roughness of 0.1 nm, the main effect of polishing is a decrease of both the lateral and vertical interface correlation lengths by about one order of magnitude which may be ascribed to an interfacial reaction at the underlying interface induced by penetrating Ar+ ions. Consequently, a lower diffusely scattered intensity around the multilayer Bragg points in the reciprocal space occurs and if it falls within the field of view, an increased contrast for imaging with such multilayer mirror is expected. In addition to an enhanced specular reflectivity, this is the second benefit of ion-beam polishing which renders the multilayer prepared especially suited for imaging biological objects in the ``water window{''} region.}",
	issn = "{0255-5476}",
	isbn = "{0-87849-847-8}",
	researcherid-numbers = "{Heinzmann, Ulrich/A-6248-2012}",
	times-cited = "{0}",
	unique-id = "{ISI:000088849300030}"
}

V Holy, J Stangl, G Springholz, M Pinczolits and G Bauer. Lateral and vertical ordering of PbSe self-assembled quantum dots in PbSe/PbEuTe superlattices. In JM Millunchick, AL Barabasi, NA Modine and ED Jones (eds.). MORPHOLOGICAL AND COMPOSITIONAL EVOLUTION OF HETEROEPITAXIAL SEMICONDUCTOR THIN FILMS 618. 2000, 161-172. Symposium K on Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films held at the 2000 MRS Spring Meeting, SAN FRANCISCO, CA, APR 24-27, 2000. BibTeX

@inproceedings{ ISI:000168127800023,
	author = "Holy, V and Stangl, J and Springholz, G and Pinczolits, M and Bauer, G",
	editor = "{Millunchick, JM and Barabasi, AL and Modine, NA and Jones, ED}",
	title = "{Lateral and vertical ordering of PbSe self-assembled quantum dots in PbSe/PbEuTe superlattices}",
	booktitle = "{MORPHOLOGICAL AND COMPOSITIONAL EVOLUTION OF HETEROEPITAXIAL SEMICONDUCTOR THIN FILMS}",
	series = "{MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS}",
	year = "{2000}",
	volume = "{618}",
	pages = "{161-172}",
	note = "{Symposium K on Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films held at the 2000 MRS Spring Meeting, SAN FRANCISCO, CA, APR 24-27, 2000}",
	organization = "{Mat Res Soc; Natl Sci Fdn; EPI MBE Products Grp; RHK Techno; SVT Associates; kSpace Associates}",
	abstract = "{The shape and the positions of self-organized PbSe quantum dots embedded in PbEuTe are studied by means of grazing-incidence small angle x-ray scattering and x-ray diffraction. Using a detailed numerical analysis of the measured x-ray data, we have determined a truncated pyramidal shape of the free-standing dots. The type of the lateral dot ordering depends substantially on the period of the PbSe/PbEuTe superlattice. In the case of smaller periods, the lateral ordering of the dots obeys a short-range order model and we have determined the statistical properties of the dot arrangement. For intermediate spacer thicknesses the dots form a hexagonal lattice. For larger periods, the dots are completely uncorrelated and their distribution can be described as a two-dimensional ideal gas. From coplanar x-ray diffraction we have determined additionally the vertical correlation of the dot positions changes from a mere vertical correlation for small superlattice periods, to a distorted trigonal lattice for the intermediate periods. For the largest period, no vertical correlation of dot positions is observed.}",
	issn = "{0272-9172}",
	isbn = "{1-55899-526-9}",
	times-cited = "{0}",
	unique-id = "{ISI:000168127800023}"
}

HH Kang, L Salamanca-Riba, H Pinczolits, G Springholz, V Holy and G Bauer. TEM investigation of self-organized PbSe quantum dots as a function of spacer layer thickness and growth temperature. In A Mascarenhas, D Follstaedt, T Suzuki and B Joyce (eds.). SELF-ORGANIZED PROCESSES IN SEMICONDUCTOR ALLOYS 583. 2000, 87-92. Symposium on Self-Organized Processes in Semiconductor Alloys held at the 1999 MRS Fall Meeting, BOSTON, MA, NOV 29-DEC 02, 1999. BibTeX

@inproceedings{ ISI:000089703500013,
	author = "Kang, HH and Salamanca-Riba, L and Pinczolits, H and Springholz, G and Holy, V and Bauer, G",
	editor = "{Mascarenhas, A and Follstaedt, D and Suzuki, T and Joyce, B}",
	title = "{TEM investigation of self-organized PbSe quantum dots as a function of spacer layer thickness and growth temperature}",
	booktitle = "{SELF-ORGANIZED PROCESSES IN SEMICONDUCTOR ALLOYS}",
	series = "{MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS}",
	year = "{2000}",
	volume = "{583}",
	pages = "{87-92}",
	note = "{Symposium on Self-Organized Processes in Semiconductor Alloys held at the 1999 MRS Fall Meeting, BOSTON, MA, NOV 29-DEC 02, 1999}",
	organization = "{Natl Renewable Energy Lab; USA Off Res; Mat Res Soc}",
	abstract = "{The study of the morphology, lateral and vertical correlation of self-organized PbSe quantum dots in Pb1-xEuxTe is presented. The samples consist of quantum dot superlattices of n periods of (PbSe/Pb1-xEuxTe) grown on PbTe/(111)BaF2 by the S-K mode using MBE. The Pb1-xEuxTe spacer thickness was varied from 34.3nm to 312nm and the growth temperature was varied between 335 degrees C and 380 degrees C. Our TEM results show very good lateral and vertical correlation of the dots. The dots form an array with either a/b/c/a/b/c/... or a/a/a'/.. vertical stacking sequence along the {[}111] growth direction. The stacking sequence is accurately controlled by the thickness of the Pb1-xEuxTe spacer layer thickness and the growth temperature. The best a/b/c/... spatial correlation was obtained for temperatures around 380 degrees C and spacer thickness of similar to 40nm. The dots are highly strained and form triangular pyramids with (111) bases and (100) facets as observed by AFM. The shape of the dots also varied with the Pb1-xEuxTe spacer thickness. An analysis of the spatial correlation of the dots' size and shape with respect to spacer thickness and growth temperature is presented.}",
	issn = "{0272-9172}",
	isbn = "{1-55899-491-2}",
	times-cited = "{0}",
	unique-id = "{ISI:000089703500013}"
}

J Stangl, V Holy, J Grim, G Bauer, J Zhu, K Brunner, G Abstreiter, O Kienzle and F Ernst. Structural investigation of Si/SiGe superlattices on vicinal (113) oriented Si. THIN SOLID FILMS 357(1):71-75, 1999. Symposium on Growth Instabilities and Decomposit ion During Heteroepitaxy at the MRS Fall Meeting, BOSTON, MASSACHUSETTS, DEC, 1998. BibTeX

@article{ ISI:000084488900016,
	author = "Stangl, J and Holy, V and Grim, J and Bauer, G and Zhu, J and Brunner, K and Abstreiter, G and Kienzle, O and Ernst, F",
	title = "{Structural investigation of Si/SiGe superlattices on vicinal (113) oriented Si}",
	journal = "{THIN SOLID FILMS}",
	year = "{1999}",
	volume = "{357}",
	number = "{1}",
	pages = "{71-75}",
	month = "{DEC 1}",
	note = "{Symposium on Growth Instabilities and Decomposit ion During Heteroepitaxy at the MRS Fall Meeting, BOSTON, MASSACHUSETTS, DEC, 1998}",
	organization = "{Mat Res Soc}",
	abstract = "{In a series of Si/SiGe superlattices grown on (113) oriented Si substrates step bunches are formed during growth of the multilayers. X-ray reflectivity, atomic force microscopy, and transmission electron microscopy have been used to structurally characterize the samples. A highly regular terrace structure, which is modulated by a long-range waviness of the interfaces has been revealed. Reciprocal space maps around the (000) reciprocal lattice point exhibit an S-shaped structure of resonant diffuse scattering sheets. (C) 1999 Elsevier Science S.A. All rights reserved.}",
	doi = "{10.1016/S0040-6090(99)00478-2}",
	issn = "{0040-6090}",
	times-cited = "{8}",
	unique-id = "{ISI:000084488900016}"
}

V Holy, G Springholz, M Pinczolits and G Bauer. Strain induced vertical and lateral correlations in quantum dot superlattices. PHYSICAL REVIEW LETTERS 83(2):356-359, 1999. BibTeX

@article{ ISI:000081358900029,
	author = "Holy, V and Springholz, G and Pinczolits, M and Bauer, G",
	title = "{Strain induced vertical and lateral correlations in quantum dot superlattices}",
	journal = "{PHYSICAL REVIEW LETTERS}",
	year = "{1999}",
	volume = "{83}",
	number = "{2}",
	pages = "{356-359}",
	month = "{JUL 12}",
	abstract = "{Vertical and lateral ordering of quantum dots in superlattices is shown to be determined by the elastic anisotropy of the matrix material and by the growth orientation. For large anisotropies, complicated dot stacking sequences with correlations inclined to the growth axis may be formed, and the lateral ordering tendency is much stronger than for isotropic materials.}",
	doi = "{10.1103/PhysRevLett.83.356}",
	issn = "{0031-9007}",
	researcherid-numbers = "{Schaff, William/B-5839-2009}",
	times-cited = "{218}",
	unique-id = "{ISI:000081358900029}"
}

J Stangl, V Holy, P Mikulik, G Bauer, I Kegel, TH Metzger, OG Schmidt, C Lange and K Eberl. Self-assembled carbon-induced germanium quantum dots studied by grazing-incidence small-angle x-ray scattering. APPLIED PHYSICS LETTERS 74(25):3785-3787, 1999. BibTeX

@article{ ISI:000080857600011,
	author = "Stangl, J and Holy, V and Mikulik, P and Bauer, G and Kegel, I and Metzger, TH and Schmidt, OG and Lange, C and Eberl, K",
	title = "{Self-assembled carbon-induced germanium quantum dots studied by grazing-incidence small-angle x-ray scattering}",
	journal = "{APPLIED PHYSICS LETTERS}",
	year = "{1999}",
	volume = "{74}",
	number = "{25}",
	pages = "{3785-3787}",
	month = "{JUN 21}",
	abstract = "{We present a structural investigation of buried C-induced Ge quantum dot multilayers grown on (001) Si by molecular-beam epitaxy. Using grazing-incidence small angle x-ray scattering, we determine the shape, the mean radius, height, and dot distance. The dot distribution is isotropic within the (001) interfaces, and no correlation of the dot positions along growth direction was found. (C) 1999 American Institute of Physics. {[}S0003-6951(99)00825-6].}",
	doi = "{10.1063/1.124179}",
	issn = "{0003-6951}",
	researcherid-numbers = "{Mikulik, Petr/E-1791-2012}",
	times-cited = "{36}",
	unique-id = "{ISI:000080857600011}"
}

J Grim, V Holy, J Kubena, J Stangl, AA Darhuber, S Zerlauth, F Schaffler and G Bauer. Diffuse x-ray reflectivity of strain-compensated Si/SiGe/SiC multilayers. JOURNAL OF PHYSICS D-APPLIED PHYSICS 32(10A, SI):A216-A219, 1999. 4th Biennial Conference on High Resolution X-ray Diffraction and Topography (XTOP 98), UNIV DURHAM, DURHAM, ENGLAND, SEP 09-11, 1998. BibTeX

@article{ ISI:000080730000043,
	author = "Grim, J and Holy, V and Kubena, J and Stangl, J and Darhuber, AA and Zerlauth, S and Schaffler, F and Bauer, G",
	title = "{Diffuse x-ray reflectivity of strain-compensated Si/SiGe/SiC multilayers}",
	journal = "{JOURNAL OF PHYSICS D-APPLIED PHYSICS}",
	year = "{1999}",
	volume = "{32}",
	number = "{10A, SI}",
	pages = "{A216-A219}",
	month = "{MAY 21}",
	note = "{4th Biennial Conference on High Resolution X-ray Diffraction and Topography (XTOP 98), UNIV DURHAM, DURHAM, ENGLAND, SEP 09-11, 1998}",
	abstract = "{The morphology of interfaces in strain-compensated Si/SiGe/SiC superlattices is investigated by means of diffuse x-ray reflection. Various structure models are assumed for an analysis of the experimental data, namely anisotropic ripples, isotropic ripples and a fractal roughness. The type of the structure and the mean distance of the ripples is determined on the basis of experimental data analysis.}",
	doi = "{10.1088/0022-3727/32/10A/342}",
	issn = "{0022-3727}",
	researcherid-numbers = "{Darhuber, Anton/A-4692-2010}",
	times-cited = "{1}",
	unique-id = "{ISI:000080730000043}"
}

V Holy, J Stangl, S Zerlauth, G Bauer, N Darowski, D Lubbert and U Pietsch. Lateral arrangement of self-assembled quantum dots in an SiGe Si superlattice. JOURNAL OF PHYSICS D-APPLIED PHYSICS 32(10A, SI):A234-A238, 1999. 4th Biennial Conference on High Resolution X-ray Diffraction and Topography (XTOP 98), UNIV DURHAM, DURHAM, ENGLAND, SEP 09-11, 1998. BibTeX

@article{ ISI:000080730000047,
	author = "Holy, V and Stangl, J and Zerlauth, S and Bauer, G and Darowski, N and Lubbert, D and Pietsch, U",
	title = "{Lateral arrangement of self-assembled quantum dots in an SiGe Si superlattice}",
	journal = "{JOURNAL OF PHYSICS D-APPLIED PHYSICS}",
	year = "{1999}",
	volume = "{32}",
	number = "{10A, SI}",
	pages = "{A234-A238}",
	month = "{MAY 21}",
	note = "{4th Biennial Conference on High Resolution X-ray Diffraction and Topography (XTOP 98), UNIV DURHAM, DURHAM, ENGLAND, SEP 09-11, 1998}",
	abstract = "{Lateral ordering of self-organized quantum dots in a SiGe/Si (001) multilayer has been investigated by grazing incidence x-ray diffraction and Monte Carlo growth simulation. It has been demonstrated that the lateral ordering stems from the elastic anisotropy of the crystal. From the reciprocal space map of the scattered intensity it follows that the dots create a disordered square grid with the axes along {[}100] and {[}010]. Both the orientation of the array axes and the mean dot distance have been obtained from the growth simulation.}",
	doi = "{10.1088/0022-3727/32/10A/346}",
	issn = "{0022-3727}",
	times-cited = "{16}",
	unique-id = "{ISI:000080730000047}"
}

J Stangl, V Holy, AA Darhuber, P Mikulik, G Bauer, J Zhu, K Brunner and G Abstreiter. High-resolution x-ray diffraction on self-organized step bunches of Si1-xGex grown on (113)-oriented Si. JOURNAL OF PHYSICS D-APPLIED PHYSICS 32(10A, SI):A71-A74, 1999. 4th Biennial Conference on High Resolution X-ray Diffraction and Topography (XTOP 98), UNIV DURHAM, DURHAM, ENGLAND, SEP 09-11, 1998. BibTeX

@article{ ISI:000080730000016,
	author = "Stangl, J and Holy, V and Darhuber, AA and Mikulik, P and Bauer, G and Zhu, J and Brunner, K and Abstreiter, G",
	title = "{High-resolution x-ray diffraction on self-organized step bunches of Si1-xGex grown on (113)-oriented Si}",
	journal = "{JOURNAL OF PHYSICS D-APPLIED PHYSICS}",
	year = "{1999}",
	volume = "{32}",
	number = "{10A, SI}",
	pages = "{A71-A74}",
	month = "{MAY 21}",
	note = "{4th Biennial Conference on High Resolution X-ray Diffraction and Topography (XTOP 98), UNIV DURHAM, DURHAM, ENGLAND, SEP 09-11, 1998}",
	abstract = "{We present investigations of a highly regular terraced surface and interface structure of Si/SiGe multilayers on Si (113) by x-ray diffraction, x-ray reflectivity and atomic force microscopy. A regular array of step bunches with lateral periods of several hundred nanometres is formed during the growth of the Si/Si1-xGex multilayers. X-ray diffraction patterns are simulated using the elastic Green function approach for the evaluation of the strain fields associated with the step edges, taking into account the relaxation towards the free surface. In addition to the terrace structure, a surface waviness on the micrometre length scale is present, leading to a modulation of the terrace widths.}",
	doi = "{10.1088/0022-3727/32/10A/315}",
	issn = "{0022-3727}",
	researcherid-numbers = "{Darhuber, Anton/A-4692-2010 Mikulik, Petr/E-1791-2012}",
	times-cited = "{1}",
	unique-id = "{ISI:000080730000016}"
}

Y Zhuang, V Holy, J Stangl, AA Darhuber, P Mikulik, S Zerlauth, F Schaffler, G Bauer, N Darowski, D Lubbert and U Pietsch. Strain relaxation in periodic arrays of Si SiGe quantum wires determined by coplanar high-resolution x-ray diffraction and grazing incidence diffraction. JOURNAL OF PHYSICS D-APPLIED PHYSICS 32(10A, SI):A224-A229, 1999. 4th Biennial Conference on High Resolution X-ray Diffraction and Topography (XTOP 98), UNIV DURHAM, DURHAM, ENGLAND, SEP 09-11, 1998. BibTeX

@article{ ISI:000080730000045,
	author = "Zhuang, Y and Holy, V and Stangl, J and Darhuber, AA and Mikulik, P and Zerlauth, S and Schaffler, F and Bauer, G and Darowski, N and Lubbert, D and Pietsch, U",
	title = "{Strain relaxation in periodic arrays of Si SiGe quantum wires determined by coplanar high-resolution x-ray diffraction and grazing incidence diffraction}",
	journal = "{JOURNAL OF PHYSICS D-APPLIED PHYSICS}",
	year = "{1999}",
	volume = "{32}",
	number = "{10A, SI}",
	pages = "{A224-A229}",
	month = "{MAY 21}",
	note = "{4th Biennial Conference on High Resolution X-ray Diffraction and Topography (XTOP 98), UNIV DURHAM, DURHAM, ENGLAND, SEP 09-11, 1998}",
	abstract = "{Elastic relaxation in dry-etched periodic wires fabricated from molecular beam epitaxy grown Si/SiGe multilayers was studied by coplanar and grazing incidence (GID) high-resolution x-ray diffraction. The inhomogeneous strain distribution in the wires was calculated by the finite element method, which provided the input data for simulations of the scattered intensities using kinematical diffraction theory used for comparison with measured reciprocal space maps. A fabrication-induced layer covering the wire surfaces, modifies the strain distribution. Using GID, the geometrical shape of the wires and their in-plane strain can be determined independently of each other.}",
	doi = "{10.1088/0022-3727/32/10A/344}",
	issn = "{0022-3727}",
	researcherid-numbers = "{Darhuber, Anton/A-4692-2010 Mikulik, Petr/E-1791-2012}",
	times-cited = "{7}",
	unique-id = "{ISI:000080730000045}"
}

Y Zhuang, J Stangl, AA Darhuber, G Bauer, P Mikulik, V Holy, N Darowski and U Pietsch. X-ray diffraction from quantum wires and quantum dots. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 10(3):215-221, Květen 1999. BibTeX

@article{ ISI:000080751500008,
	author = "Zhuang, Y and Stangl, J and Darhuber, AA and Bauer, G and Mikulik, P and Holy, V and Darowski, N and Pietsch, U",
	title = "{X-ray diffraction from quantum wires and quantum dots}",
	journal = "{JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS}",
	year = "{1999}",
	volume = "{10}",
	number = "{3}",
	pages = "{215-221}",
	month = "{MAY}",
	abstract = "{From the distribution of the scattered intensity in reciprocal space, information on the shape as well as on the strain distribution in nanostructured samples can be obtained. This is exemplified by applying this method to laterally patterned periodic Si/SiGe superlattices as well as to periodic SiGe dot arrays embedded in Si.}",
	doi = "{10.1023/A:1008952113611}",
	issn = "{0957-4522}",
	researcherid-numbers = "{Darhuber, Anton/A-4692-2010 Mikulik, Petr/E-1791-2012}",
	times-cited = "{2}",
	unique-id = "{ISI:000080751500008}"
}

V Holy. Diffuse x-ray reflection from multilayers with rough interfaces. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 10(3):223-226, Květen 1999. BibTeX

@article{ ISI:000080751500009,
	author = "Holy, V",
	title = "{Diffuse x-ray reflection from multilayers with rough interfaces}",
	journal = "{JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS}",
	year = "{1999}",
	volume = "{10}",
	number = "{3}",
	pages = "{223-226}",
	month = "{MAY}",
	abstract = "{Diffuse x-ray reflection probes the correlation properties of the interface roughness in multilayers. From the distribution of the diffusely scattered intensity in reciprocal space both the lateral and vertical correlations of the interface roughness can be determined. For an analysis of measured data the proper choice of the structure model of the interfaces is essential. In the paper, several structure models are discussed and their applications are shown in experimental examples.}",
	doi = "{10.1023/A:1008904330449}",
	issn = "{0957-4522}",
	times-cited = "{1}",
	unique-id = "{ISI:000080751500009}"
}

G Bauer, AA Darhuber and V Holy. Self-assembled Germanium-dot multilayers embedded in silicon. CRYSTAL RESEARCH AND TECHNOLOGY 34(2):197-209, 1999. 28th Annual Scientific Meeting of Deutsche-Gesellschaft-fur-Kristallwachstum-und-Kristallzuchtung / 6th Annual Meeting of the Deutsche-Gesellschaft-fur-Kristallographie, UNIV KARLSRUHEM, KARLSRUHEM, GERMANY, MAR 02-06, 1998. BibTeX

@article{ ISI:000078752200009,
	author = "Bauer, G and Darhuber, AA and Holy, V",
	title = "{Self-assembled Germanium-dot multilayers embedded in silicon}",
	journal = "{CRYSTAL RESEARCH AND TECHNOLOGY}",
	year = "{1999}",
	volume = "{34}",
	number = "{2}",
	pages = "{197-209}",
	note = "{28th Annual Scientific Meeting of Deutsche-Gesellschaft-fur-Kristallwachstum-und-Kristallzuchtung / 6th Annual Meeting of the Deutsche-Gesellschaft-fur-Kristallographie, UNIV KARLSRUHEM, KARLSRUHEM, GERMANY, MAR 02-06, 1998}",
	organization = "{Dtsch Gesell Kristallwachstum \& Kristallzucht; Dtsch Gesell Kristallog}",
	abstract = "{We report mainly on structural investigations on nanoscale Ge rich islands, the growth of which is driven by misfit strain (Stranski-Krastanow growth mode). Results of several methods, i.e. atomic force microscopy, transmission electron microscopy, and mainly x-ray diffraction and x-ray reflectivity measurements are presented and discussed.}",
	doi = "{10.1002/(SICI)1521-4079(199902)34:2<197::AID-CRAT197>3.0.CO;2-A}",
	issn = "{0232-1300}",
	researcherid-numbers = "{Darhuber, Anton/A-4692-2010}",
	times-cited = "{4}",
	unique-id = "{ISI:000078752200009}"
}

V Holy, U Pietsch and T Baumbach. Basic elements of the equipment. In HIGH-RESOLUTION X-RAY SCATTERING FROM THIN FILMS AND MULTILAYERS. Series SPRINGER TRACTS IN MODERN PHYSICS, volume 149, 1999, pages 3-16. BibTeX

@incollection{ ISI:000078354200001,
	author = "Holy, V and Pietsch, U and Baumbach, T",
	title = "{Basic elements of the equipment}",
	booktitle = "{HIGH-RESOLUTION X-RAY SCATTERING FROM THIN FILMS AND MULTILAYERS}",
	series = "{SPRINGER TRACTS IN MODERN PHYSICS}",
	year = "{1999}",
	volume = "{149}",
	pages = "{3-16}",
	issn = "{0081-3869}",
	times-cited = "{0}",
	unique-id = "{ISI:000078354200001}"
}

G Bauer, V Holy, J Stangl, AA Darhuber and U Pietsch. Elastic relaxation in germanium islands. In EA Fitzgerald (ed.). LATTICE MISMATCHED THIN FILMS. 1999, 113-120. 1st International Workshop on Lattice-Mismatched and Heterovalent Thin Film Epitaxy, CASTELVECCHIO PAS, ITALY, SEP 13-15, 1998. BibTeX

@inproceedings{ ISI:000083970800015,
	author = "Bauer, G and Holy, V and Stangl, J and Darhuber, AA and Pietsch, U",
	editor = "{Fitzgerald, EA}",
	title = "{Elastic relaxation in germanium islands}",
	booktitle = "{LATTICE MISMATCHED THIN FILMS}",
	year = "{1999}",
	pages = "{113-120}",
	note = "{1st International Workshop on Lattice-Mismatched and Heterovalent Thin Film Epitaxy, CASTELVECCHIO PAS, ITALY, SEP 13-15, 1998}",
	organization = "{United Engn Fdn}",
	abstract = "{We report on structural investigations of nanoscale Ge rich islands grown in Si/SiGe multilayers using coplanar high resolution x-ray diffraction and grazing incidence diffraction. The inhomogeneous strain fields associated with the elastically relaxed islands cause diffusely scattered intensity which is recorded in two dimensional reciprocal space maps and simulated. We show, that the lateral ordering of the islands is due to the elastic anisotropy of the Si matrix and results from a modification of the surface strain due to buried islands.}",
	isbn = "{0-87339-444-5}",
	times-cited = "{0}",
	unique-id = "{ISI:000083970800015}"
}

J Grim, V Holy, J Kubena, AA Darhuber, S Zerlauth and G Bauer. X-ray reflection from self-organized interfaces in an SiGe/Si multilayer. SEMICONDUCTOR SCIENCE AND TECHNOLOGY 14(1):32-40, Leden 1999. BibTeX

@article{ ISI:000078105500004,
	author = "Grim, J and Holy, V and Kubena, J and Darhuber, AA and Zerlauth, S and Bauer, G",
	title = "{X-ray reflection from self-organized interfaces in an SiGe/Si multilayer}",
	journal = "{SEMICONDUCTOR SCIENCE AND TECHNOLOGY}",
	year = "{1999}",
	volume = "{14}",
	number = "{1}",
	pages = "{32-40}",
	month = "{JAN}",
	abstract = "{Interface morphology of a strained SiGe/Si multilayer has been investigated by means of non-specular x-ray reflection. Depending on the azimuth of the scattering plane, two types of interface pattern have been observed, namely an asymmetrical random staircase and symmetrical islands superimposed on it. The distribution of the scattered intensity in reciprocal space has been simulated using a structure model of self-similar interface patterns and the distorted-wave Born approximation. The parameters of the interfaces following from the fit of the measured and simulated data were compared with the results of high-resolution x-ray diffractometry and transmission electron microscopy, and a good correspondence has been achieved.}",
	doi = "{10.1088/0268-1242/14/1/004}",
	issn = "{0268-1242}",
	researcherid-numbers = "{Darhuber, Anton/A-4692-2010}",
	times-cited = "{3}",
	unique-id = "{ISI:000078105500004}"
}

I Vavra, J Bydzovsky, P Svec, M Harvanka, J Derer, Z Frait, V Kambersky, R Lopusnik, S Visnovsky, J Kubena and V Holy. Structural, electrical and magnetic properties of Fe/Si and Fe/FeSi multilayers. ACTA PHYSICA SLOVACA 48(6):743-746, Prosinec 1998. BibTeX

@article{ ISI:000077972000036,
	author = "Vavra, I and Bydzovsky, J and Svec, P and Harvanka, M and Derer, J and Frait, Z and Kambersky, V and Lopusnik, R and Visnovsky, S and Kubena, J and Holy, V",
	title = "{Structural, electrical and magnetic properties of Fe/Si and Fe/FeSi multilayers}",
	journal = "{ACTA PHYSICA SLOVACA}",
	year = "{1998}",
	volume = "{48}",
	number = "{6}",
	pages = "{743-746}",
	month = "{DEC}",
	abstract = "{Fe/Si and Fe/FeSi multilayers with various spacer layer thickness (0.8-2.0 nm) were prepared by magnetron sputtering. The detailed structural analysis performed by low angle X-ray scattering and cross-sectional TEM revealed the differences between the microstructure of both kinds of multilayers. Magnetic analysis showed that interlayer exchange coupling is present only in Fe/FeSi multilayers with spacer layer thickness around 1.7 nm.}",
	issn = "{0323-0465}",
	times-cited = "{2}",
	unique-id = "{ISI:000077972000036}"
}

G Springholz, V Holy, M Pinczolits and G Bauer. Self-organized growth of three-dimensional quantum-dot crystals with fcc-like stacking and a tunable lattice constant. SCIENCE 282(5389):734-737, 1998. BibTeX

@article{ ISI:000076607500048,
	author = "Springholz, G and Holy, V and Pinczolits, M and Bauer, G",
	title = "{Self-organized growth of three-dimensional quantum-dot crystals with fcc-like stacking and a tunable lattice constant}",
	journal = "{SCIENCE}",
	year = "{1998}",
	volume = "{282}",
	number = "{5389}",
	pages = "{734-737}",
	month = "{OCT 23}",
	abstract = "{The self-organization of pyramidal PbSe islands that spontaneously form during strained-layer epitaxial growth of PbSe/Pb1-xEuxTe (x = 0.05 to 0.1) superlattices results in the formation of three-dimensional quantum-dot crystals. In these crystals, the dots are arranged in a trigonal lattice with a face-centered cubic (fcc)-like A-B-C-A-B-C vertical stacking sequence. The Lattice constant of the dot crystal can be tuned continuously by changing the superlattice period. As shown by theoretical calculations, the elastic anisotropy in these artificial dot crystals acts in a manner similar to that of the directed chemical bonds of crystalline solids. The narrow size distribution and excellent control of the dot arrangement may be advantageous for optoelectronic device applications.}",
	doi = "{10.1126/science.282.5389.734}",
	issn = "{0036-8075}",
	times-cited = "{375}",
	unique-id = "{ISI:000076607500048}"
}

M Jergel, V Holy, E Majkova, S Luby, R Senderak, HJ Stock, D Menke, U Kleineberg and U Heinzmann. X-ray scattering study of interface roughness correlation in Mo/Si and Ti/C multilayers for X-UV optics. PHYSICA B 253(1-2):28-39, Říjen 1998. BibTeX

@article{ ISI:000075457900003,
	author = "Jergel, M and Holy, V and Majkova, E and Luby, S and Senderak, R and Stock, HJ and Menke, D and Kleineberg, U and Heinzmann, U",
	title = "{X-ray scattering study of interface roughness correlation in Mo/Si and Ti/C multilayers for X-UV optics}",
	journal = "{PHYSICA B}",
	year = "{1998}",
	volume = "{253}",
	number = "{1-2}",
	pages = "{28-39}",
	month = "{OCT}",
	abstract = "{The X-ray reflectivity and interface diffuse scattering at grazing incidence were measured on two couples of multilayers, namely on Mo/Si multilayers (50 periods) prepared by e-beam evaporation and sputtering techniques and on e-beam evaporated Ti/C multilayers (87 periods) prepared with and without Ar+ ion-beam polishing after each layer deposition. The results were evaluated using Fresnel's optical algorithm and a semikinematical modification of the distorted-wave Born approximation to extract and compare the basic interface parameters within each couple. For both Mo/Si multilayers, a frequency-dependent vertical correlation function of the interface roughness corresponding to a model of kinetic roughening was applicable, the vertical correlation length (at a given frequency) being more than an order of magnitude shorter for the sputtered sample. This effect may be explained by high lateral mobility of sputtered adatoms when the Ar plasma pressure is below the thermalization threshold. The main effect of polishing the Ti/C multilayer is a decrease of both the lateral and vertical correlation lengths by about an order of magnitude which may be ascribed to an interfacial reaction at the underlying interface induced by penetrating Ar+ ions. Different lateral and vertical correlations of the interface profiles evidenced within each couple of multilayers affect the distribution of the interface diffuse scattering intensity in the reciprocal space which has some implications for X-UV optics applications. (C) 1998 Elsevier Science B.V. All rights reserved.}",
	doi = "{10.1016/S0921-4526(98)00385-8}",
	issn = "{0921-4526}",
	researcherid-numbers = "{Heinzmann, Ulrich/A-6248-2012}",
	times-cited = "{15}",
	unique-id = "{ISI:000075457900003}"
}

V Holy, AA Darhuber, J Stangl, S Zerlauth, F Schaffler, G Bauer, N Darowski, D Lubbert, U Pietsch and I Vavra. Coplanar and grazing incidence x-ray-diffraction investigation of self-organized SiGe quantum dot multilayers. PHYSICAL REVIEW B 58(12):7934-7943, 1998. BibTeX

@article{ ISI:000076130500069,
	author = "Holy, V and Darhuber, AA and Stangl, J and Zerlauth, S and Schaffler, F and Bauer, G and Darowski, N and Lubbert, D and Pietsch, U and Vavra, I",
	title = "{Coplanar and grazing incidence x-ray-diffraction investigation of self-organized SiGe quantum dot multilayers}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{1998}",
	volume = "{58}",
	number = "{12}",
	pages = "{7934-7943}",
	month = "{SEP 15}",
	abstract = "{We report on a formalism for the calculation of diffusely scattered x-ray intensity from spatially inhomogeneous strain fields in Ge rich islands and in the surrounding Si matrix of SiGe/Si multilayers. The data analysis is based on a theory considering the two-dimensional statistical distribution of the dot positions, which allows a common formalism for both coplanar and grazing incidence scattering geometries. The strain fields were simulated based on the approach of the elastic Green function, taking the influence of the elastic strain relaxation at the sample surface into account. From these simulations the degree of relaxation of the islands was obtained, which compared very well with experimental data derived from x-ray reciprocal space maps. {[}S0163-1829(98)02736-2].}",
	doi = "{10.1103/PhysRevB.58.7934}",
	issn = "{1098-0121}",
	researcherid-numbers = "{Darhuber, Anton/A-4692-2010}",
	times-cited = "{38}",
	unique-id = "{ISI:000076130500069}"
}

AA Darhuber, J Zhu, V Holy, J Stangl, P Mikulik, K Brunner, G Abstreiter and G Bauer. Highly regular self-organization of step bunches during growth of SiGe on Si(113). APPLIED PHYSICS LETTERS 73(11):1535-1537, 1998. BibTeX

@article{ ISI:000075861100027,
	author = "Darhuber, AA and Zhu, J and Holy, V and Stangl, J and Mikulik, P and Brunner, K and Abstreiter, G and Bauer, G",
	title = "{Highly regular self-organization of step bunches during growth of SiGe on Si(113)}",
	journal = "{APPLIED PHYSICS LETTERS}",
	year = "{1998}",
	volume = "{73}",
	number = "{11}",
	pages = "{1535-1537}",
	month = "{SEP 14}",
	abstract = "{We have studied the structural properties of highly periodic arrays of terrace steps in a Si/SiGe multilayer grown on a miscut Si(113) substrate by atomic force microscopy, x-ray reflection and high resolution x-ray diffraction. The data reveal a regular array of step bunches with vertical correlation within the multilayer and periodic surface steps extending over lengths of several tens of microns. The (113)-faceted terraces have a lateral period of about 360 nm which is locally modulated due to a long-range waviness of the surface. (C) 1998 American Institute of Physics.}",
	doi = "{10.1063/1.122197}",
	issn = "{0003-6951}",
	researcherid-numbers = "{Darhuber, Anton/A-4692-2010 Mikulik, Petr/E-1791-2012}",
	times-cited = "{16}",
	unique-id = "{ISI:000075861100027}"
}

M Jergel, E Majkova, S Luby, R Senderak and V Holy. Characterization of surfaces and interfaces by hard X-ray reflectometry and diffuse scattering at grazing incidence. ACTA PHYSICA SLOVACA 48(4):427-440, Srpen 1998. BibTeX

@article{ ISI:000075856700003,
	author = "Jergel, M and Majkova, E and Luby, S and Senderak, R and Holy, V",
	title = "{Characterization of surfaces and interfaces by hard X-ray reflectometry and diffuse scattering at grazing incidence}",
	journal = "{ACTA PHYSICA SLOVACA}",
	year = "{1998}",
	volume = "{48}",
	number = "{4}",
	pages = "{427-440}",
	month = "{AUG}",
	abstract = "{The techniques for characterization of surfaces and interfaces of mono/multilayer thin films based on measurements of the specular reflectivity and diffuse scattering at grazing incidence of hard X-rays are outlined. The specular reflectivity and interface diffuse scattering from a single interface are discussed within the Fresnel theory, the first Born approximation, and the first distorted-wave Born approximation. Their extension to the multilayer case is shown. The specular reflectivity gives basic structural parameters of a multilayer like the thicknesses of the individual layers and their fluctuations, the total multilayer thickness, the number of multilayer periods is a periodic multilayer, atomic densities of individual layers, and the parameter called ``interface roughness{''} which characterizes the projection of an interface profile into the normal direction with respect to the multilayer surface. To distinguish between geometrically rough and compositionally graded interfaces, a mapping of the diffusely scattered X-ray intensity throughout the reciprocal space is inevitable which provides the interface parameters like the rms value of the real geometrical roughness, lateral correlation length, fractal dimension, as well as a degree of the vertical conformality of the interface profiles which reflects the growth mechanism. Some practical examples of such evaluations on amorphous W/Si multilayers are presented and the results discussed from the point of view of possible applications.}",
	issn = "{0323-0465}",
	times-cited = "{2}",
	unique-id = "{ISI:000075856700003}"
}

AA Darhuber, V Holy, P Schittenhelm, J Stangl, I Kegel, Z Kovats, TH Metzger, G Bauer, G Abstreiter and G Grubel. Structural characterization of self-assembled Ge dot multilayers by X-ray diffraction and reflectivity methods. PHYSICA E 2(1-4):789-793, Červenec 1998. 8th International Conference on Modulated Semiconductor Structures, UNIV CA, SANTA BARBARA, CALIFORNIA, JUL 14-18, 1997. BibTeX

@article{ ISI:000075383500162,
	author = "Darhuber, AA and Holy, V and Schittenhelm, P and Stangl, J and Kegel, I and Kovats, Z and Metzger, TH and Bauer, G and Abstreiter, G and Grubel, G",
	title = "{Structural characterization of self-assembled Ge dot multilayers by X-ray diffraction and reflectivity methods}",
	journal = "{PHYSICA E}",
	year = "{1998}",
	volume = "{2}",
	number = "{1-4}",
	pages = "{789-793}",
	month = "{JUL}",
	note = "{8th International Conference on Modulated Semiconductor Structures, UNIV CA, SANTA BARBARA, CALIFORNIA, JUL 14-18, 1997}",
	abstract = "{We have studied the structural properties of multiple layers of self-assembled Ge dots non-destructively by conventional X-ray diffraction and grazing incidence diffraction using reciprocal space mapping techniques. In particular, the influence of the thickness of the Si spacer between the individual dot layers on the strain relaxation in the dots and the lateral and vertical correlation of the dot positions was investigated. Whereas conventional X-ray diffraction averages over the whole multilayer slack, grazing incidence diffraction allows for a position-resolved determination of the strain relaxation. (C) 1998 Elsevier Science B.V. All rights reserved.}",
	doi = "{10.1016/S1386-9477(98)00161-1}",
	issn = "{1386-9477}",
	researcherid-numbers = "{Darhuber, Anton/A-4692-2010}",
	times-cited = "{6}",
	unique-id = "{ISI:000075383500162}"
}

V Holy, AA Darhuber, J Stangl, G Bauer, J Nutzel and G Abstreiter. X-ray reflectivity investigations of the interface morphology in strained SiGe/Si multilayers. SEMICONDUCTOR SCIENCE AND TECHNOLOGY 13(6):590-598, Červen 1998. BibTeX

@article{ ISI:000074143200008,
	author = "Holy, V and Darhuber, AA and Stangl, J and Bauer, G and Nutzel, J and Abstreiter, G",
	title = "{X-ray reflectivity investigations of the interface morphology in strained SiGe/Si multilayers}",
	journal = "{SEMICONDUCTOR SCIENCE AND TECHNOLOGY}",
	year = "{1998}",
	volume = "{13}",
	number = "{6}",
	pages = "{590-598}",
	month = "{JUN}",
	abstract = "{We have studied the lateral and vertical correlation of the interface roughness of Si/SiGe multilayers grown on Si(001) substrates with a miscut between 0.2 degrees and 0.5 degrees using high resolution x-ray reflectivity. The theoretical analysis of the measurements proved that the established phenomenological models for the description of the interface profiles fail in the common case of moderately small miscut angles. We obtained qualitatively correct results for the roughness correlations using a microscopic kinetic step-flow growth model, which accounts for the aggregation of monolayer steps (step bunching) during the hetero-epitaxial growth.}",
	doi = "{10.1088/0268-1242/13/6/009}",
	issn = "{0268-1242}",
	researcherid-numbers = "{Darhuber, Anton/A-4692-2010}",
	times-cited = "{15}",
	unique-id = "{ISI:000074143200008}"
}

V Holy, AA Darhuber, J Stangl, G Bauer, J Nutzel and G Abstreiter. Oblique roughness replication in strained SiGe/Si multilayers. PHYSICAL REVIEW B 57(19):12435-12442, 1998. BibTeX

@article{ ISI:000073761500094,
	author = "Holy, V and Darhuber, AA and Stangl, J and Bauer, G and Nutzel, J and Abstreiter, G",
	title = "{Oblique roughness replication in strained SiGe/Si multilayers}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{1998}",
	volume = "{57}",
	number = "{19}",
	pages = "{12435-12442}",
	month = "{MAY 15}",
	abstract = "{The replication of the interface roughness in SiGe/Si multilayers grown on miscut Si(001) substrates has been studied by means of x-ray reflectivity reciprocal space mapping. The interface profiles were found to be highly correlated and the direction of the maximal replication was inclined with respect to the growth direction. This oblique replication is explained by the influence of the inhomogeneous strain distribution around step bunches. The formation of step bunches is described by a kinetic step-how model based on the work by Tersoff et al. {[}Phys. Rev. Lett. 75, 2730 (1995)]. We have generalized this model by taking into account local variations of the in-plane strain. The angle of obliqueness deduced from these calculations agrees very well with the experimental findings.}",
	doi = "{10.1103/PhysRevB.57.12435}",
	issn = "{1098-0121}",
	researcherid-numbers = "{Darhuber, Anton/A-4692-2010}",
	times-cited = "{33}",
	unique-id = "{ISI:000073761500094}"
}

JH Li, G Springholz, J Stangl, H Seyringer, V Holy, F Schaffler and G Bauer. Strain relaxation and surface morphology of compositionally graded Si/Si1-xGex buffers. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 16(3):1610-1615, 1998. 16th North American Conference on Molecular Beam Epitaxy, UNIV MICHIGAN, ANN ARBOR, MICHIGAN, OCT 05-08, 1997. BibTeX

@article{ ISI:000074298300137,
	author = "Li, JH and Springholz, G and Stangl, J and Seyringer, H and Holy, V and Schaffler, F and Bauer, G",
	title = "{Strain relaxation and surface morphology of compositionally graded Si/Si1-xGex buffers}",
	journal = "{JOURNAL OF VACUUM SCIENCE \& TECHNOLOGY B}",
	year = "{1998}",
	volume = "{16}",
	number = "{3}",
	pages = "{1610-1615}",
	month = "{MAY-JUN}",
	note = "{16th North American Conference on Molecular Beam Epitaxy, UNIV MICHIGAN, ANN ARBOR, MICHIGAN, OCT 05-08, 1997}",
	abstract = "{Systematic studies of strain relaxation were performed in a series of compositionally graded SiGe buffer layers grown without and with a subsequent constant composition SiGe layer by x-ray reciprocal space mapping techniques. The analysis of these experiments yields depth dependent strain values as well as misfit dislocation densities. The higher the grading rate (\%Ge/mu m) the higher the residual in-plane strain at the epitaxial surface. Atomic force microscopy studies show that the rms surface roughness increases systematically with increasing final Ge content of the graded layers and rises with increasing grading rate. (C) 1998 American Vacuum Society.}",
	doi = "{10.1116/1.589948}",
	issn = "{1071-1023}",
	times-cited = "{22}",
	unique-id = "{ISI:000074298300137}"
}

J Stangl, AA Darhuber, V Holy, M Naurois, S Ferreira, W Faschinger and G Bauer. High-resolution x-ray diffraction and x-ray reflectivity studies of short-period CdTe/MnTe-superlattices. JOURNAL OF CRYSTAL GROWTH 184:105-108, Únor 1998. 8th International Conference on II-VI Compounds, GRENOBLE, FRANCE, AUG 25-29, 1997. BibTeX

@article{ ISI:000072653800022,
	author = "Stangl, J and Darhuber, AA and Holy, V and de Naurois, M and Ferreira, S and Faschinger, W and Bauer, G",
	title = "{High-resolution x-ray diffraction and x-ray reflectivity studies of short-period CdTe/MnTe-superlattices}",
	journal = "{JOURNAL OF CRYSTAL GROWTH}",
	year = "{1998}",
	volume = "{184}",
	pages = "{105-108}",
	month = "{FEB}",
	note = "{8th International Conference on II-VI Compounds, GRENOBLE, FRANCE, AUG 25-29, 1997}",
	abstract = "{CdTe/MnTe superlattices have recently been focused on because of their magnetic properties, in particular, the magnetic coupling of the MnTe layers across the CdTe interlayers. The aim of the present paper is the determination of the structural parameters of short-period CdTe/MnTe superlattice samples by means of X-ray diffraction and X-ray reflectivity studies, as these parameters are essential for the interpretation of the experiments on the magnetic properties. Using X-ray diffraction, we obtained the layer structure and the strain status of the superlattices. From X-ray reflectivity, information on the interface morphology and the replication of the interface structure during the growth of the superlattices is obtained. (C) 1998 Elsevier Science B.V. All rights reserved.}",
	doi = "{10.1016/S0022-0248(98)80303-5}",
	issn = "{0022-0248}",
	researcherid-numbers = "{Darhuber, Anton/A-4692-2010 Ferreira, Sukarno/E-1411-2011}",
	times-cited = "{2}",
	unique-id = "{ISI:000072653800022}"
}

M Jergel, V Holy, R Senderak, E Majkova and S Luby. Application of the distorted-wave born approximation to interface characterization in W/Si multilayer thin films. In R Delhez and EJ Mittemeijer (eds.). EPDIC 5, PTS 1 AND 2 278-2. 1998, 454-459. 5th European Powder Diffraction Conference (EPDIC 5), PARMA, ITALY, MAY 25-28, 1997. BibTeX

@inproceedings{ ISI:000074945400068,
	author = "Jergel, M and Holy, V and Senderak, R and Majkova, E and Luby, S",
	editor = "{Delhez, R and Mittemeijer, EJ}",
	title = "{Application of the distorted-wave born approximation to interface characterization in W/Si multilayer thin films}",
	booktitle = "{EPDIC 5, PTS 1 AND 2}",
	series = "{MATERIALS SCIENCE FORUM}",
	year = "{1998}",
	volume = "{278-2}",
	pages = "{454-459}",
	note = "{5th European Powder Diffraction Conference (EPDIC 5), PARMA, ITALY, MAY 25-28, 1997}",
	organization = "{Phillips Anal}",
	abstract = "{The DWBA approach was utilized to evaluate the measurements of the X-ray interface diffuse scattering at grazing incidence on a set of the electron-beam evaporated W/Si multilayers with the ML period ranging from 2 nm to 8 nm. The results of the DWBA approach with the interface roughness as the disturbance, described by a simplified Spiller model of the vertical interface conformity, were confirmed by a semi-kinematic approach taking the whole ML as the disturbance. There is a high degree of the interface conformity, revealed also within a phenomenological frequency-dependent model, which slightly deteriorates with increasing ML period. The lateral correlation length is doubled on increasing ML period from 2 nm to 8 nm while the interface: roughness keeps nearly a constant value of 0.5 nm and slightly decreases across a given ML rewards the surface. Therefore, the Kardar-Parisi-Zhang growth model found in sputtered W/Si MLs was not confirmed in our evaporated W/Si MLs.}",
	issn = "{0255-5476}",
	isbn = "{0-87849-807-9}",
	times-cited = "{0}",
	unique-id = "{ISI:000074945400068}"
}

U Niggemeier, K Lischka, WM Plotz and V Holy. X-ray reflectometer for the diagnostics of thin films during growth. JOURNAL OF APPLIED CRYSTALLOGRAPHY 30(Part 6):905-908, 1997. BibTeX

@article{ ISI:000072421300004,
	author = "Niggemeier, U and Lischka, K and Plotz, WM and Holy, V",
	title = "{X-ray reflectometer for the diagnostics of thin films during growth}",
	journal = "{JOURNAL OF APPLIED CRYSTALLOGRAPHY}",
	year = "{1997}",
	volume = "{30}",
	number = "{Part 6}",
	pages = "{905-908}",
	month = "{DEC 1}",
	abstract = "{A new experimental set-up is described that allows the measurement of the X-ray reflectivity of thin layers that are contained in a growth chamber (in situ). The X-ray reflectivity measured with our angular dispersive glancing incidence reflectometer is identical, within experimental error, to that measured with a conventional high-resolution diffractometer.}",
	doi = "{10.1107/S0021889897002483}",
	issn = "{0021-8898}",
	times-cited = "{4}",
	unique-id = "{ISI:000072421300004}"
}

V Holy, C Giannini, L Tapfer, T Marschner and W Stolz. Diffuse x-ray reflection from multilayers with stepped interfaces (vol 55, pg 9960, 1997). PHYSICAL REVIEW B 56(15):9975, 1997. BibTeX

@article{ ISI:A1997YC39100118,
	author = "Holy, V and Giannini, C and Tapfer, L and Marschner, T and Stolz, W",
	title = "{Diffuse x-ray reflection from multilayers with stepped interfaces (vol 55, pg 9960, 1997)}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{1997}",
	volume = "{56}",
	number = "{15}",
	pages = "{9975}",
	month = "{OCT 15}",
	doi = "{10.1103/PhysRevB.56.9975}",
	issn = "{0163-1829}",
	times-cited = "{0}",
	unique-id = "{ISI:A1997YC39100118}"
}

M Jergel, V Holy, E Majkova, S Luby and R Senderak. Interface evolution in a W/Si multilayer after rapid thermal annealing studied by X-ray reflectivity and diffuse scattering. JOURNAL OF APPLIED CRYSTALLOGRAPHY 30(2, Part 5):642-646, 1997. 10th International Conference on Small-Angle Scattering, CAMPINAS, BRAZIL, JUL 21-26, 1996. BibTeX

@article{ ISI:000071640900017,
	author = "Jergel, M and Holy, V and Majkova, E and Luby, S and Senderak, R",
	title = "{Interface evolution in a W/Si multilayer after rapid thermal annealing studied by X-ray reflectivity and diffuse scattering}",
	journal = "{JOURNAL OF APPLIED CRYSTALLOGRAPHY}",
	year = "{1997}",
	volume = "{30}",
	number = "{2, Part 5}",
	pages = "{642-646}",
	month = "{OCT 1}",
	note = "{10th International Conference on Small-Angle Scattering, CAMPINAS, BRAZIL, JUL 21-26, 1996}",
	abstract = "{An interface study of the effect of rapid thermal annealing (RTA) in the temperature range 523-1273 K for 5-40 s on a nominally {[}(50 Angstrom Si/10 Angstrom W) x 9] amorphous multilayer (ML) deposited on an Si(100) wafer was performed by X-ray reflectivity and diffuse-scattering measurements at grazing incidence. The results of the X-ray reflectivity and diffuse-scattering measurements were evaluated by Fresnel optical computational code and within the distorted-wave Born approximation, respectively. Up to the 773 K/5 s annealing step, the r.m.s. interface roughness decreases by 30\%, which brings about a reflectivity increase of 20\% on the first Bragg maximum. There is a small overall increase of the r.m.s. interface roughness across the ML in the as-deposited state and the interface profiles are highly correlated. From the very beginning of RTA, the fractal interface behaviour is gradually lost and the lateral correlation length increases, this process being accompanied by a decrease of the interface conformality. This tendency continues during the 773 K/20 s annealing; however, the r.m.s. roughness evolution is reversed. During the 1023 K/5 s annealing, the interfaces are no longer `seen' by the X-rays and during the 1273 K/5 s annealing, a total collapse of-the ML structure takes place.}",
	doi = "{10.1107/S0021889897001301}",
	issn = "{0021-8898}",
	times-cited = "{11}",
	unique-id = "{ISI:000071640900017}"
}

JH Li, V Holy, F Bauer and F Schaffler. Strain relaxation in high electron mobility Si1-xGex/Si structures. JOURNAL OF APPLIED PHYSICS 82(6):2881-2886, 1997. BibTeX

@article{ ISI:A1997XX99600023,
	author = "Li, JH and Holy, V and Bauer, F and Schaffler, F",
	title = "{Strain relaxation in high electron mobility Si1-xGex/Si structures}",
	journal = "{JOURNAL OF APPLIED PHYSICS}",
	year = "{1997}",
	volume = "{82}",
	number = "{6}",
	pages = "{2881-2886}",
	month = "{SEP 15}",
	abstract = "{We have studied the strain relaxation in Si1-xGex/Si (001) structures with high electron mobility grown by molecular beam epitaxy. The structures contain a Si1-xGex layer with linearly graded composition, followed subsequently by a uniform composition buffer Si1-yGey, a thin Si layer serving as two-dimensional electron gas channel, and a modulation n-doped Si1-xGex layer. We found that a major part of the graded layer is basically completely strain relaxed, whereas a very thin layer close to the graded-uniform layer interface, as well as the uniform alloy buffer, are just partly relaxed. We performed also model calculations of the strain status of a graded-uniform two-layer system using an equilibrium approach. It is found that for our Si0.7Ge0.3 systems, the residual strains of the samples with different composition, grading rate, and a uniform buffer thickness of 0.6 mu m is almost the same at equilibrium. However, experiments show a clear dependence of the residual strain on the grading rate of the graded buffer. The higher the grading rate, the higher is the residual strain in the constant composition alloy buffer. This indicates that with a lower grading rate, the structure is closer to equilibrium, and is thus, thermally more stable. Furthermore, lower grading rates produce also smoother surfaces. (C) 1997 American Institute of Physics.}",
	doi = "{10.1063/1.366281}",
	issn = "{0021-8979}",
	times-cited = "{19}",
	unique-id = "{ISI:A1997XX99600023}"
}

AA Darhuber, J Stangl, V Holy, G Bauer, A Krost, M Grundmann, D Bimberg, VM Ustinov, PS Kop'ev, AO Kosogov and P Werner. Structural characterization of self-assembled quantum dot structures by X-ray diffraction techniques. THIN SOLID FILMS 306(2):198-204, 1997. Workshop on Molecular Beam Expitaxy-Growth Physics and Technology (MBE-GPT 96), WARSAW, POLAND, OCT 21-25, 1996. BibTeX

@article{ ISI:000071050700005,
	author = "Darhuber, AA and Stangl, J and Holy, V and Bauer, G and Krost, A and Grundmann, M and Bimberg, D and Ustinov, VM and Kop'ev, PS and Kosogov, AO and Werner, P",
	title = "{Structural characterization of self-assembled quantum dot structures by X-ray diffraction techniques}",
	journal = "{THIN SOLID FILMS}",
	year = "{1997}",
	volume = "{306}",
	number = "{2}",
	pages = "{198-204}",
	month = "{SEP 11}",
	note = "{Workshop on Molecular Beam Expitaxy-Growth Physics and Technology (MBE-GPT 96), WARSAW, POLAND, OCT 21-25, 1996}",
	abstract = "{We have investigated, by means of X-ray diffraction reciprocal space mapping and X-ray reflectivity, multilayers of self-organized InGaAs quantum dots grown on GaAs by MBE. An anisotropy of the average inter-dot spacings in the {[}100] and {[}110] directions was found, consistent with an ordering of the dots in a two-dimensional square lattice with main axes along the <100>-directions and a lattice parameter of 55 nm. The nearly perfect vertical alignment (stacking) of the dots was deduced consistently from the diffraction peak shape and from measurements of the resonant diffuse scattering in the X-ray reflection regime. (C) 1997 Elsevier Science S.A.}",
	doi = "{10.1016/S0040-6090(97)00097-7}",
	issn = "{0040-6090}",
	researcherid-numbers = "{Darhuber, Anton/A-4692-2010 Grundmann, Marius/D-4229-2012}",
	times-cited = "{15}",
	unique-id = "{ISI:000071050700005}"
}

G Springholz, G Bauer and V Holy. Local surface deformations induced by interfacial misfit dislocations in lattice-mismatched heteroepitaxy of EuTe on PbTe(111) (vol 365, pg 453, 1996). SURFACE SCIENCE 382(1-3):364, 1997. BibTeX

@article{ ISI:A1997XQ14100050,
	author = "Springholz, G and Bauer, G and Holy, V",
	title = "{Local surface deformations induced by interfacial misfit dislocations in lattice-mismatched heteroepitaxy of EuTe on PbTe(111) (vol 365, pg 453, 1996)}",
	journal = "{SURFACE SCIENCE}",
	year = "{1997}",
	volume = "{382}",
	number = "{1-3}",
	pages = "{364}",
	month = "{JUN 20}",
	issn = "{0039-6028}",
	times-cited = "{0}",
	unique-id = "{ISI:A1997XQ14100050}"
}

AA Darhuber, P Schittenhelm, V Holy, J Stangl, G Bauer and G Abstreiter. High-resolution x-ray diffraction from multilayered self-assembled Ge dots. PHYSICAL REVIEW B 55(23):15652-15663, 1997. BibTeX

@article{ ISI:A1997XH33500058,
	author = "Darhuber, AA and Schittenhelm, P and Holy, V and Stangl, J and Bauer, G and Abstreiter, G",
	title = "{High-resolution x-ray diffraction from multilayered self-assembled Ge dots}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{1997}",
	volume = "{55}",
	number = "{23}",
	pages = "{15652-15663}",
	month = "{JUN 15}",
	abstract = "{We have studied multilayers of self-assembled Ge-rich dots embedded in silicon grown by molecular-beam epitaxy using high resolution x-ray reciprocal space mapping and reflectivity. The Si spacer thicknesses between the dot arrays were in the range of 10-40 nm, the typical dot size was about 150 nm for the diameter and 7 nm for the height. The measured reciprocal space maps were simulated using statistical kinematical x-ray-diffraction theory, and a good agreement between experimental and simulated data has been achieved. From the measurements, the in-plane strain in the dot lattice was determined. We derived the degree of the vertical correlation of the dot positions (''stacking'') and a lateral ordering of the dots in a square array with main axes parallel to the < 100 > directions, with an array lattice constant of about 500 nm.}",
	doi = "{10.1103/PhysRevB.55.15652}",
	issn = "{0163-1829}",
	researcherid-numbers = "{Darhuber, Anton/A-4692-2010}",
	times-cited = "{103}",
	unique-id = "{ISI:A1997XH33500058}"
}

AA Darhuber, V Holy, J Stangl, G Bauer, A Krost, M Grundmann, D Bimberg, VM Ustinov, PS Kop'ev, AO Kosogov and P Werner. High resolution X-ray diffraction and reflectivity studies of vertical and lateral ordering in multiple self-organized InGaAs quantum dots. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 36(6B):4084-4087, Červen 1997. 4th International Colloquium on Scanning Tunneling Microscopy, KANAZAWA INST TECHNOL, KANAZAWA, JAPAN, DEC 12-14, 1996. BibTeX

@article{ ISI:000073628300070,
	author = "Darhuber, AA and Holy, V and Stangl, J and Bauer, G and Krost, A and Grundmann, M and Bimberg, D and Ustinov, VM and Kop'ev, PS and Kosogov, AO and Werner, P",
	title = "{High resolution X-ray diffraction and reflectivity studies of vertical and lateral ordering in multiple self-organized InGaAs quantum dots}",
	journal = "{JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES \& REVIEW PAPERS}",
	year = "{1997}",
	volume = "{36}",
	number = "{6B}",
	pages = "{4084-4087}",
	month = "{JUN}",
	note = "{4th International Colloquium on Scanning Tunneling Microscopy, KANAZAWA INST TECHNOL, KANAZAWA, JAPAN, DEC 12-14, 1996}",
	organization = "{Japan Soc Appl Phys}",
	abstract = "{We have investigated multiple layers of self-assembled InGaAs quantum dots by high-resolution X-ray diffraction reciprocal space mapping and reflectivity. An anisotropy in the dot spacing was found, which proves an ordering of the islands in a disordered two-dimensional square lattice with main axes parallel to the {[}100] direction and a lateral lattice parameter of 55 nm. Vertical correlations in the dot multilayers were investigated nondestructively in the regime of total external reflection of X-rays.}",
	doi = "{10.1143/JJAP.36.4084}",
	issn = "{0021-4922}",
	researcherid-numbers = "{Darhuber, Anton/A-4692-2010 Grundmann, Marius/D-4229-2012}",
	times-cited = "{5}",
	unique-id = "{ISI:000073628300070}"
}

S Zerlauth, J Stangl, AA Darhuber, V Holy, G Bauer and F Schaffler. MBE growth and structural characterization of Si1-yCy/Si1-xGex superlattices. JOURNAL OF CRYSTAL GROWTH 175(Part 1):459-464, Květen 1997. 9th International Conference on Molecular Beam Epitaxy (MBE-IX), PEPPERDINE UNIV, MALIBU, CA, AUG 05-09, 1996. BibTeX

@article{ ISI:A1997XL45100080,
	author = "Zerlauth, S and Stangl, J and Darhuber, AA and Holy, V and Bauer, G and Schaffler, F",
	title = "{MBE growth and structural characterization of Si1-yCy/Si1-xGex superlattices}",
	journal = "{JOURNAL OF CRYSTAL GROWTH}",
	year = "{1997}",
	volume = "{175}",
	number = "{Part 1}",
	pages = "{459-464}",
	month = "{MAY}",
	note = "{9th International Conference on Molecular Beam Epitaxy (MBE-IX), PEPPERDINE UNIV, MALIBU, CA, AUG 05-09, 1996}",
	abstract = "{We report on the MBE growth and X-ray characterization of Si1-yCy/Si1-xGex superlattices (SLs). The concentrations and thicknesses of the layers were chosen such as to get strain-symmetrized superlattices, lattice-matched to the Si (001) substrates. In-situ RHEED investigations showed increasing roughness during the growth of the Si1-yCy layers and a smoothing effect of the subsequent Si1-xGex layers. Further characterizations comprised double and triple axis X-ray diffraction, X-ray refraction (XRR), and atomic force microscopy (AFM). Dynamical simulations of the various X-ray configurations yielded the structural parameters of the SLs as well as information on the morphological and replication properties of the interfaces. With increasing carbon content we found an overall interface roughening concomitant with a significant decrease of the replication length. Lateral correlation length fits were compared with AFM-measurements, which give a more detailed picture of the interface morphology as long as the replication lengths are large.}",
	doi = "{10.1016/S0022-0248(96)00931-1}",
	issn = "{0022-0248}",
	researcherid-numbers = "{Darhuber, Anton/A-4692-2010}",
	times-cited = "{4}",
	unique-id = "{ISI:A1997XL45100080}"
}

V Holy, C Giannini, L Tapfer, T Marschner and W Stolz. Diffuse x-ray reflection from multilayers with stepped interfaces. PHYSICAL REVIEW B 55(15):9960-9968, 1997. BibTeX

@article{ ISI:A1997WV25100123,
	author = "Holy, V and Giannini, C and Tapfer, L and Marschner, T and Stolz, W",
	title = "{Diffuse x-ray reflection from multilayers with stepped interfaces}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{1997}",
	volume = "{55}",
	number = "{15}",
	pages = "{9960-9968}",
	month = "{APR 15}",
	abstract = "{Diffuse x-ray reflection from a multilayer with stepped interfaces has been investigated theoretically and experimentally. The statistical description of the stepped interfaces has been based on the theory of random processes. Diffuse x-ray scattering from those interfaces has been calculated using the distorted-wave Born approximation. The theory has been used for an analysis of the intensity distributions measured on a GaAs/(GaIn)As/GaAs/Ga(PAs) strained-layer superlattice grown on a miscut substrate. From the measurements, the mean size of the interface terraces and their orientations could be determined.}",
	doi = "{10.1103/PhysRevB.55.9960}",
	issn = "{0163-1829}",
	times-cited = "{31}",
	unique-id = "{ISI:A1997WV25100123}"
}

R Senderak, M Jergel, S Luby, E Majkova, V Holy, G Haindl, F Hamelmann, U Kleineberg and U Heinzmann. Thermal stability of W1-xSix/Si multilayers under rapid thermal annealing. JOURNAL OF APPLIED PHYSICS 81(5):2229-2235, 1997. BibTeX

@article{ ISI:A1997WK08800027,
	author = "Senderak, R and Jergel, M and Luby, S and Majkova, E and Holy, V and Haindl, G and Hamelmann, F and Kleineberg, U and Heinzmann, U",
	title = "{Thermal stability of W1-xSix/Si multilayers under rapid thermal annealing}",
	journal = "{JOURNAL OF APPLIED PHYSICS}",
	year = "{1997}",
	volume = "{81}",
	number = "{5}",
	pages = "{2229-2235}",
	month = "{MAR 1}",
	abstract = "{W1-xSix/Si multilayers (MLs) (x less than or equal to 0.66) were deposited onto oxidized Si substrates, heat treated by rapid thermal (RTA) and standard furnace annealing up to 1000 degrees C for 30 s and 25 min, respectively, and analyzed by various x-ray techniques and Rutherford backscattering spectrometry. W1-xSix/Si MLs are more stable the higher the value of x because the driving force for interdiffusion is suppressed by the doping; the temperature for complete interdiffusion increases from 500 to 850 degrees C as x increases from 0 to 0.66. The as-deposited MLs were amorphous. Their thermal stability increases with increasing x. The interface roughness is independent of x but increases with increasing RTA temperature. The reflectivity of W1-xSix/Si MLs is lower than that of W/Si because of lower optical contrast. (C) 1997 American Institute of Physics.}",
	doi = "{10.1063/1.364273}",
	issn = "{0021-8979}",
	researcherid-numbers = "{Heinzmann, Ulrich/A-6248-2012}",
	times-cited = "{14}",
	unique-id = "{ISI:A1997WK08800027}"
}

AA Darhuber, V Holy, J Stangl, G Bauer, A Krost, F Heinrichsdorff, M Grundmann, D Bimberg, VM Ustinov, PS Kopev, AO Kosogov and P Werner. Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution x-ray diffraction. APPLIED PHYSICS LETTERS 70(8):955-957, 1997. BibTeX

@article{ ISI:A1997WJ62600013,
	author = "Darhuber, AA and Holy, V and Stangl, J and Bauer, G and Krost, A and Heinrichsdorff, F and Grundmann, M and Bimberg, D and Ustinov, VM and Kopev, PS and Kosogov, AO and Werner, P",
	title = "{Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution x-ray diffraction}",
	journal = "{APPLIED PHYSICS LETTERS}",
	year = "{1997}",
	volume = "{70}",
	number = "{8}",
	pages = "{955-957}",
	month = "{FEB 24}",
	abstract = "{We have studied multiple layers of self-organized InGaAs-islands grown on GaAs by x-ray diffraction reciprocal space mapping. We found an anisotropy of the dot spacing in {[}100] and {[}110] direction consistent with an ordering of the dots in a two-dimensional square lattice with main axes along the {[}100] direction and a lattice parameter of 55 nm. The nearly perfect vertical alignment (stacking) of the dots was deduced from the diffraction peak shape. (C) 1997 American Institute of Physics.}",
	doi = "{10.1063/1.118463}",
	issn = "{0003-6951}",
	researcherid-numbers = "{Darhuber, Anton/A-4692-2010 Grundmann, Marius/D-4229-2012}",
	times-cited = "{77}",
	unique-id = "{ISI:A1997WJ62600013}"
}

I Vavra, P Lobotka, J Derer, S Gazi, V Holy, J Kubena and J Sobota. Stacked Josephson junction based on Nb/Si superlattice. JOURNAL OF LOW TEMPERATURE PHYSICS 106(3-4):373-379, Únor 1997. International Weak Superconductivity Symposium (WSS), SMOLENICE CASTLE, SLOVAK REPUBLIC, AUG 04-07, 1996. BibTeX

@article{ ISI:A1997WF90500033,
	author = "Vavra, I and Lobotka, P and Derer, J and Gazi, S and Holy, V and Kubena, J and Sobota, J",
	title = "{Stacked Josephson junction based on Nb/Si superlattice}",
	journal = "{JOURNAL OF LOW TEMPERATURE PHYSICS}",
	year = "{1997}",
	volume = "{106}",
	number = "{3-4}",
	pages = "{373-379}",
	month = "{FEB}",
	note = "{International Weak Superconductivity Symposium (WSS), SMOLENICE CASTLE, SLOVAK REPUBLIC, AUG 04-07, 1996}",
	abstract = "{We report on the technology and basic electrical properties of ten-fold stacked Nb/Si/Nb Josephson junction (JJ). The problem of making a large number of stacked JJs with identical properties was solved by metallic superlattice preparation technology. The uniformity of Si barriers thickness was examined by low angle X-ray diffraction and cross-sectional transmission electron microscopy. To prevent pinholes in the Si barriers the Nb/Si superlattice was sputtered at the regime at which smoothing of interfacial roughness occurs. The stacked junction exhibit both ac and dc Josephson effects. In the I-c(B) diffraction pattern there is an extra periodicity of about 2 - 3 G in addition to a larger period of about 21 G.}",
	doi = "{10.1007/BF02399641}",
	issn = "{0022-2291}",
	researcherid-numbers = "{Sobota, Jaroslav/D-5192-2012}",
	times-cited = "{9}",
	unique-id = "{ISI:A1997WF90500033}"
}

J Stangl, S Zerlauth, V Holy, W Faschinger and G Bauer. Reciprocal space mapping on Si1-xCx epilayers and Si-n/C/Si-n superlattices. NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS 19(2-4):355-360, 1997. 3rd European Symposium on X-ray Topography and High-Resolution X-ray Diffraction (X-TOP 96), PALERMO, ITALY, APR 22-24, 1996. BibTeX

@article{ ISI:A1997XJ00300029,
	author = "Stangl, J and Zerlauth, S and Holy, V and Faschinger, W and Bauer, G",
	title = "{Reciprocal space mapping on Si1-xCx epilayers and Si-n/C/Si-n superlattices}",
	journal = "{NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS}",
	year = "{1997}",
	volume = "{19}",
	number = "{2-4}",
	pages = "{355-360}",
	month = "{FEB-APR}",
	note = "{3rd European Symposium on X-ray Topography and High-Resolution X-ray Diffraction (X-TOP 96), PALERMO, ITALY, APR 22-24, 1996}",
	abstract = "{High-resolution X-ray diffraction (HRXRD) and triple-axis diffrac tometry (TAD) are used to investigate Si1-xCx epilayers and Si-n/C/Si-n superlattices. The samples were annealed in several steps to obtain information about their thermal stability. During annealing defects are formed in the epitaxial layers as well as in the substrates, leading to a contribution of diffusely scattered intensity around the particular reciprocal lattice points. A comparison of the measured intensity distribution in reciprocal space with model calculations based on a theory by Krivoglaz shows that the defects in the layers are different from those in the substrates, and that the assumption of small spherical defects in the epilayers leads to a quite good agreement between measurement and simulation. The comparison of different samples also shows that the formation of the defects depends on the particular sample structure.}",
	issn = "{0392-6737}",
	times-cited = "{0}",
	unique-id = "{ISI:A1997XJ00300029}"
}

V Holy, AA Darhuber, J Stangl, G Bauer, JF Nutzel and G Abstreiter. X-ray reflectivity reciprocal space mapping of strained SiGe/Si superlattices. NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS 19(2-4):419-428, 1997. 3rd European Symposium on X-ray Topography and High-Resolution X-ray Diffraction (X-TOP 96), PALERMO, ITALY, APR 22-24, 1996. BibTeX

@article{ ISI:A1997XJ00300037,
	author = "Holy, V and Darhuber, AA and Stangl, J and Bauer, G and Nutzel, JF and Abstreiter, G",
	title = "{X-ray reflectivity reciprocal space mapping of strained SiGe/Si superlattices}",
	journal = "{NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS}",
	year = "{1997}",
	volume = "{19}",
	number = "{2-4}",
	pages = "{419-428}",
	month = "{FEB-APR}",
	note = "{3rd European Symposium on X-ray Topography and High-Resolution X-ray Diffraction (X-TOP 96), PALERMO, ITALY, APR 22-24, 1996}",
	abstract = "{Small-angle diffuse X-ray reflection from a SiGe/Si multilayer has been studied theoretically and experimentally. The scattering process has been described by means of the DWBA method. For the description of the rough interfaces, the results of the Markov chain theory have been used. It has been demonstrated that the distribution of the diffusely scattered intensity in reciprocal plane gives some information on both the in-plane and inter-plane correlation properties of the multilayer roughness. The sample of SiGe/Si multilayer grown on a slightly miscut substrate has been investigated. The most suitable structure model describing the form of the interfaces is a combination of the two-level model with the staircase model.}",
	issn = "{0392-6737}",
	researcherid-numbers = "{Darhuber, Anton/A-4692-2010}",
	times-cited = "{8}",
	unique-id = "{ISI:A1997XJ00300037}"
}

M Jergel, E Majkova, V Holy, S Luby and R Senderak. Interface study of W/Si multilayers with increasing number of periods. NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS 19(2-4):439-445, 1997. 3rd European Symposium on X-ray Topography and High-Resolution X-ray Diffraction (X-TOP 96), PALERMO, ITALY, APR 22-24, 1996. BibTeX

@article{ ISI:A1997XJ00300039,
	author = "Jergel, M and Majkova, E and Holy, V and Luby, S and Senderak, R",
	title = "{Interface study of W/Si multilayers with increasing number of periods}",
	journal = "{NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS}",
	year = "{1997}",
	volume = "{19}",
	number = "{2-4}",
	pages = "{439-445}",
	month = "{FEB-APR}",
	note = "{3rd European Symposium on X-ray Topography and High-Resolution X-ray Diffraction (X-TOP 96), PALERMO, ITALY, APR 22-24, 1996}",
	abstract = "{The X-ray reflectivity and diffuse-scattering measurements at grazing incidence on W/Si multilayers with increasing number of periods N from 3 to 15 were performed using the CuK alpha(1) radiation. The Fresnel optical computational code and distorted-wave Born approximation were used to evaluate the results. The multilayer Bragg interferences are observed from N = 6. The reflectivity on the 1st Bragg maximum increases from 20\% to 55\% on increasing N from 6 to 15. The r.m.s. interface roughness of 0.65nm does not change with N. A model of vertically correlated interface profiles was successfully used to simulate the diffuse scattering results and confirmed a negligible cumulative interface roughness upwards the multilayers. The lateral correlation length of 10 nm is independent of M. An additional roughness component of very large correlation length (''waviness'') had to be included to obtain self-consistent simulations of the sample and detector scans for N greater than or equal to 9. A gradual increase of the fractal parameter of the interface profiles from h = 0.15 for N = 3 to h = 0.75 for N = 15 is the most pronounced effect of increasing N and implies the loss of the fractal behaviour.}",
	issn = "{0392-6737}",
	times-cited = "{1}",
	unique-id = "{ISI:A1997XJ00300039}"
}

AA Darhuber, V Holy, J Stangl, G Bauer, J Nutzel and G Abstreiter. Interface roughness in strained Si/SiGe multilayers. In SM Prokes, OJ Glembocki, SK Brierley, JM Gibson and JM Woodall (eds.). CONTROL OF SEMICONDUCTOR SURFACES AND INTERFACES 448. 1997, 153-158. Symposium on Control of Semiconductor Surfaces and Interfaces, at the 1996 MRS Fall Meeting, BOSTON, MA, DEC 02-05, 1996. BibTeX

@inproceedings{ ISI:A1997BJ32K00024,
	author = "Darhuber, AA and Holy, V and Stangl, J and Bauer, G and Nutzel, J and Abstreiter, G",
	editor = "{Prokes, SM and Glembocki, OJ and Brierley, SK and Gibson, JM and Woodall, JM}",
	title = "{Interface roughness in strained Si/SiGe multilayers}",
	booktitle = "{CONTROL OF SEMICONDUCTOR SURFACES AND INTERFACES}",
	series = "{MATERIALS RESEARCH SOCIETY CONFERENCE PROCEEDINGS}",
	year = "{1997}",
	volume = "{448}",
	pages = "{153-158}",
	note = "{Symposium on Control of Semiconductor Surfaces and Interfaces, at the 1996 MRS Fall Meeting, BOSTON, MA, DEC 02-05, 1996}",
	organization = "{Mat Res Soc}",
	abstract = "{Diffuse x-ray reflection from a SiGe/Si multilayer grown pseudomorphically on slightly miscut Si(001) substrates has been studied theoretically and experimentally. In the framework of the Distorted-Wave Born Approximation (DWBA), we demonstrated that the distribution of the diffusely scattered intensity gives conclusive information on both the amount and the in-plane and inter-plane correlation properties of the interface roughness. The best model for the description of the interface morphology was found to be a combination of a two-level model and a staircase model.}",
	issn = "{0886-7860}",
	isbn = "{1-55899-352-5}",
	times-cited = "{0}",
	unique-id = "{ISI:A1997BJ32K00024}"
}

AA Darhuber, V Holy, J Stangl, G Bauer, P Schittenhelm and G Abstreiter. Structural investigations of self-assembled Ge-dots by x-ray diffraction and reflection. In SM Prokes, OJ Glembocki, SK Brierley, JM Gibson and JM Woodall (eds.). CONTROL OF SEMICONDUCTOR SURFACES AND INTERFACES 448. 1997, 199-204. Symposium on Control of Semiconductor Surfaces and Interfaces, at the 1996 MRS Fall Meeting, BOSTON, MA, DEC 02-05, 1996. BibTeX

@inproceedings{ ISI:A1997BJ32K00031,
	author = "Darhuber, AA and Holy, V and Stangl, J and Bauer, G and Schittenhelm, P and Abstreiter, G",
	editor = "{Prokes, SM and Glembocki, OJ and Brierley, SK and Gibson, JM and Woodall, JM}",
	title = "{Structural investigations of self-assembled Ge-dots by x-ray diffraction and reflection}",
	booktitle = "{CONTROL OF SEMICONDUCTOR SURFACES AND INTERFACES}",
	series = "{MATERIALS RESEARCH SOCIETY CONFERENCE PROCEEDINGS}",
	year = "{1997}",
	volume = "{448}",
	pages = "{199-204}",
	note = "{Symposium on Control of Semiconductor Surfaces and Interfaces, at the 1996 MRS Fall Meeting, BOSTON, MA, DEC 02-05, 1996}",
	organization = "{Mat Res Soc}",
	abstract = "{Self-organized Ge-dots on (001)-oriented Si-substrates have been studied using two-dimensionally resolved high resolution x-ray diffraction and reflectivity. The degree of the vertical correlation of the dot positions (''stacking'') has been derived as well as a lateral ordering of the dots in a (disordered) square array with main axes parallel to {[}100] and {[}010].}",
	issn = "{0886-7860}",
	isbn = "{1-55899-352-5}",
	times-cited = "{0}",
	unique-id = "{ISI:A1997BJ32K00031}"
}

G Springholz, G Bauer and V Holy. Local surface deformations induced by interfacial misfit dislocations in lattice-mismatched heteroepitaxy of EuTe on PbTe(111). SURFACE SCIENCE 365(2):453-460, 1996. BibTeX

@article{ ISI:A1996VH64500027,
	author = "Springholz, G and Bauer, G and Holy, V",
	title = "{Local surface deformations induced by interfacial misfit dislocations in lattice-mismatched heteroepitaxy of EuTe on PbTe(111)}",
	journal = "{SURFACE SCIENCE}",
	year = "{1996}",
	volume = "{365}",
	number = "{2}",
	pages = "{453-460}",
	month = "{SEP 20}",
	abstract = "{Using UHV scanning tunneling microscopy, the local surface deformations produced by strain fields of misfit dislocations are studied for molecular beam epitaxy of 2.1\% lattice-mismatched EuTe on PbTe(111). The observed surface deformations exhibit a characteristic dependence on the orientation of the Burgers vector, which is in excellent quantitative agreement with calculations based on elasticity theory, taking into account the relaxation of the local strain fields due to the existence of a free surface. Furthermore, it is demonstrated that this allows the study of misfit dislocation reactions by STM even for dislocations located far below the epitaxial surface.}",
	doi = "{10.1016/0039-6028(96)00704-2}",
	issn = "{0039-6028}",
	times-cited = "{8}",
	unique-id = "{ISI:A1996VH64500027}"
}

AA Darhuber, V Holy, G Bauer, PD Wang, YP Song, CMS Torres and MC Holland. Quantitative analysis of elastic strains in GaAs/AlAs quantum dots. PHYSICA B 227(1-4):11-16, Září 1996. 3rd International Symposium on New Phenomena in Mesoscopic Structures (NPMS 95), MAUI, HI, DEC 04-08, 1995. BibTeX

@article{ ISI:A1996VR71500005,
	author = "Darhuber, AA and Holy, V and Bauer, G and Wang, PD and Song, YP and Torres, CMS and Holland, MC",
	title = "{Quantitative analysis of elastic strains in GaAs/AlAs quantum dots}",
	journal = "{PHYSICA B}",
	year = "{1996}",
	volume = "{227}",
	number = "{1-4}",
	pages = "{11-16}",
	month = "{SEP}",
	note = "{3rd International Symposium on New Phenomena in Mesoscopic Structures (NPMS 95), MAUI, HI, DEC 04-08, 1995}",
	organization = "{Japan Soc Promot Sci, 151st Comm Electr Propert Extreme Struct}",
	abstract = "{We have studied a GaAs/AlAs periodic quantum dot array using reciprocal space mapping around the (004) and <((11)over bar 3)> reciprocal lattice points. Both the coherently and the diffusely scattered X-ray intensities were analyzed by performing two-dimensional model calculations. From the distribution of the diffracted intensities we deduced the average strain status in the dots. From the numerical simulations it is evident that random elastic strain fields are present, which extend through almost the entire volume of the quantum dot. The simulations of the X-ray measurements revealed that the crystalline part of the dots is considerably smaller as scanning electron micrographs would indicate.}",
	doi = "{10.1016/0921-4526(96)00320-1}",
	issn = "{0921-4526}",
	researcherid-numbers = "{Sotomayor Torres, Clivia/E-8418-2010 Darhuber, Anton/A-4692-2010}",
	times-cited = "{6}",
	unique-id = "{ISI:A1996VR71500005}"
}

G Springholz, G Bauer and V Holy. Scanning-tunneling-microscopy observation of stress-driven surface diffusion due to localized strain fields of misfit dislocations in heteroepitaxy. PHYSICAL REVIEW B 54(7):4500-4503, 1996. BibTeX

@article{ ISI:A1996VE48800033,
	author = "Springholz, G and Bauer, G and Holy, V",
	title = "{Scanning-tunneling-microscopy observation of stress-driven surface diffusion due to localized strain fields of misfit dislocations in heteroepitaxy}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{1996}",
	volume = "{54}",
	number = "{7}",
	pages = "{4500-4503}",
	month = "{AUG 15}",
	abstract = "{Using in situ scanning-tunneling microscopy, the influence of localized strain fields of misfit dislocations on epitaxial growth is studied. We observe pronounced surface deformations caused by single dislocations and dislocation reactions, in excellent quantitative agreement with calculations based on elasticity theory. Due to the local reduction of strain energy at the surface above the interfacial dislocations, ridgelike structures are formed due to stress-driven surface diffusion during growth.}",
	doi = "{10.1103/PhysRevB.54.4500}",
	issn = "{0163-1829}",
	times-cited = "{12}",
	unique-id = "{ISI:A1996VE48800033}"
}

M Jergel, V Holy, E Majkova, S Luby and R Senderak. Interface roughness correlation in tungsten/silicon multilayers. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 156(1-3):117-118, Duben 1996. 2nd International Symposium on Metallic Multilayers (MML 95), CAVENDISH LAB, CAMBRIDGE, ENGLAND, SEP 11-14, 1995. BibTeX

@article{ ISI:A1996UV35800049,
	author = "Jergel, M and Holy, V and Majkova, E and Luby, S and Senderak, R",
	title = "{Interface roughness correlation in tungsten/silicon multilayers}",
	journal = "{JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS}",
	year = "{1996}",
	volume = "{156}",
	number = "{1-3}",
	pages = "{117-118}",
	month = "{APR}",
	note = "{2nd International Symposium on Metallic Multilayers (MML 95), CAVENDISH LAB, CAMBRIDGE, ENGLAND, SEP 11-14, 1995}",
	abstract = "{X-ray reflectivity and diffuse scattering measurements at grazing incidence Have been made using Cu K-alpha 1 radiation on obliquely deposited W/Si multilayers. The specular and non-specular scans were simulated by a Fresnel optical computational code and within the distorted-wave Born approximation, respectively. Rougher and vertically less correlated interfaces are evidenced with increasing deposition angle, thus revealing an increased tendency for agglomeration.}",
	doi = "{10.1016/0304-8853(95)00808-X}",
	issn = "{0304-8853}",
	times-cited = "{1}",
	unique-id = "{ISI:A1996UV35800049}"
}

R Stommer, U Englisch, U Pietsch and V Holy. X-ray and neutron diffuse scattering from multilayers of fatty acid salt molecules. PHYSICA B 221(1-4):284-288, Duben 1996. 4th International Conference on Surface X-Ray and Neutron Scattering, LAKE GENEVA, WI, JUN, 1995. BibTeX

@article{ ISI:A1996UR27700043,
	author = "Stommer, R and Englisch, U and Pietsch, U and Holy, V",
	title = "{X-ray and neutron diffuse scattering from multilayers of fatty acid salt molecules}",
	journal = "{PHYSICA B}",
	year = "{1996}",
	volume = "{221}",
	number = "{1-4}",
	pages = "{284-288}",
	month = "{APR}",
	note = "{4th International Conference on Surface X-Ray and Neutron Scattering, LAKE GENEVA, WI, JUN, 1995}",
	organization = "{Argonne Natl Lab}",
	abstract = "{X-ray (XDS) and neutron (NDS) diffuse scattering are used for nondestructive investigation of the domain structure of organic multilayers prepared by the Langmuir-Blodgett (LB) technique. The multilayers under investigation were lamellae of Cd-stearate and Pb-stearate molecules, XDS measurements are performed to determine the lateral correlation length of scattering aggregates as well as the angular distribution of domains, NDS experiments of sequentially deuterated films show the higher disorder of fatty acid chains compared to the stacking of metallic heads. Holes and scratches are responsible for the density loss within the film and cause the X-rays scattered coherently to vanish completely. We present a simple model to evaluate the XDS and NDS, taking both height fluctuation and density fluctuation of scattering aggregates into account. Height-height correlation given by Sinha and density-density correlation known from small angle X-ray scattering (SAXS) are unified to a general density-density correlation function for small interfaces.}",
	doi = "{10.1016/0921-4526(95)00938-8}",
	issn = "{0921-4526}",
	times-cited = "{23}",
	unique-id = "{ISI:A1996UR27700043}"
}

G Bauer, JH Li and V Holy. High resolution x-ray reciprocal space mapping. ACTA PHYSICA POLONICA A 89(2):115-127, Únor 1996. II International School and Symposium on Physics in Materials Science Surface and Interface Engineering, JASZOWIEC, POLAND, JUL 17-23, 1995. BibTeX

@article{ ISI:A1996UD40100002,
	author = "Bauer, G and Li, JH and Holy, V",
	title = "{High resolution x-ray reciprocal space mapping}",
	journal = "{ACTA PHYSICA POLONICA A}",
	year = "{1996}",
	volume = "{89}",
	number = "{2}",
	pages = "{115-127}",
	month = "{FEB}",
	note = "{II International School and Symposium on Physics in Materials Science Surface and Interface Engineering, JASZOWIEC, POLAND, JUL 17-23, 1995}",
	abstract = "{A survey will be given on recent advances in the investigation of semiconductor epilayers, heterostructures and superlattices using reciprocal space mapping techniques based on triple-axis diffractometry. It is shown that X-ray reciprocal space mapping yields quantitative information on strain, strain relaxation, as well as composition in such structures. These data are obtained from analyses of tile isointensity contours of scattered X-ray intensity around reciprocal lattice points. Further analysis of the diffuse scattering yields also information on defect distribution in tile epilayers.}",
	issn = "{0587-4246}",
	times-cited = "{0}",
	unique-id = "{ISI:A1996UD40100002}"
}

I Vavra, P Lobotka, S Gazi, J Derer, J Kubena, V Holy, Z Bochnicek and J Sobota. Thermal stability of SIS tunnel junction with silicon barrier. CZECHOSLOVAK JOURNAL OF PHYSICS 46(2):675-676, 1996. 21st International Conference on Low Temperature Physics (LT 21), PRAGUE, CZECH REPUBLIC, AUG 08-14, 1996. BibTeX

@article{ ISI:A1996VL43900061,
	author = "Vavra, I and Lobotka, P and Gazi, S and Derer, J and Kubena, J and Holy, V and Bochnicek, Z and Sobota, J",
	title = "{Thermal stability of SIS tunnel junction with silicon barrier}",
	journal = "{CZECHOSLOVAK JOURNAL OF PHYSICS}",
	year = "{1996}",
	volume = "{46}",
	number = "{2}",
	pages = "{675-676}",
	note = "{21st International Conference on Low Temperature Physics (LT 21), PRAGUE, CZECH REPUBLIC, AUG 08-14, 1996}",
	organization = "{Int Union Pure \& Appl Phys}",
	abstract = "{The thermal treatment of Nb/Si/Nb Josephson junction with high resistive amorphous silicon barrier (2nm thick) involves the interdiffusion at Nb/Si interfaces even at 250 degrees C. In order to study these tiny interdiffusion process a superlattice {[}Nb(6nm)/Si(2nm)]{*}10 (prepared at the same technological conditions as the Josephson junction) nas used for low angle x-ray spectroscopy. The interdiffusion yielding a sublayer of superconducting Nb-Si amorphous mixture at the interfaces was detected. This represents in the Josephson junction the decrease of Si-barrier thickness and consequently the increase of critical current in measured I-V characteristic.}",
	doi = "{10.1007/BF02583645}",
	issn = "{0011-4626}",
	researcherid-numbers = "{Sobota, Jaroslav/D-5192-2012}",
	times-cited = "{1}",
	unique-id = "{ISI:A1996VL43900061}"
}

G Bauer, AA Darhuber and V Holy. Structural characterization of reactive ion etched semiconductor nanostructures using x-ray reciprocal space mapping. In SW Pang, OJ Glembocki, FH Pollak, FG Celii and CM SotomayorTorres (eds.). DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS PROCESSING II 406. 1996, 457-468. Symposium on Diagnostic Techniques for Semiconductor Materials Processing II, at the 1995 MRS Fall Meeting, BOSTON, MA, NOV 27-30, 1995. BibTeX

@inproceedings{ ISI:A1996BF20G00070,
	author = "Bauer, G and Darhuber, AA and Holy, V",
	editor = "{Pang, SW and Glembocki, OJ and Pollak, FH and Celii, FG and SotomayorTorres, CM}",
	title = "{Structural characterization of reactive ion etched semiconductor nanostructures using x-ray reciprocal space mapping}",
	booktitle = "{DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS PROCESSING II}",
	series = "{MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS}",
	year = "{1996}",
	volume = "{406}",
	pages = "{457-468}",
	note = "{Symposium on Diagnostic Techniques for Semiconductor Materials Processing II, at the 1995 MRS Fall Meeting, BOSTON, MA, NOV 27-30, 1995}",
	organization = "{Mat Res Soc}",
	issn = "{0272-9172}",
	isbn = "{1-55899-309-6}",
	times-cited = "{0}",
	unique-id = "{ISI:A1996BF20G00070}"
}

M Jergel, E Majkova, V Holy, R Senderak and S Luby. X-ray reflectivity and diffuse scattering study of thermally treated W1-xSix/Si multilayers. In RJ Cernik, R Delhez and EJ Mittemeijer (eds.). EUROPEAN POWDER DIFFRACTION: EPDIC IV, PTS 1 AND 2 228(Part 1&2). 1996, 505-510. 4th European Powder Diffraction Conference (EPDIC IV), CHESTER, ENGLAND, JUL, 1995. BibTeX

@inproceedings{ ISI:A1996BG37Z00085,
	author = "Jergel, M and Majkova, E and Holy, V and Senderak, R and Luby, S",
	editor = "{Cernik, RJ and Delhez, R and Mittemeijer, EJ}",
	title = "{X-ray reflectivity and diffuse scattering study of thermally treated W1-xSix/Si multilayers}",
	booktitle = "{EUROPEAN POWDER DIFFRACTION: EPDIC IV, PTS 1 AND 2}",
	series = "{MATERIALS SCIENCE FORUM}",
	year = "{1996}",
	volume = "{228}",
	number = "{Part 1\&2}",
	pages = "{505-510}",
	note = "{4th European Powder Diffraction Conference (EPDIC IV), CHESTER, ENGLAND, JUL, 1995}",
	organization = "{Philips Anal X Ray; CLRC Daresbury Lab}",
	abstract = "{The evolution of the W1-xSix/Si MLs (x = 0, 0.33, 0.67) due to RTA up to the ML collapse is studied by XRD, X-ray reflectivity, and diffuse scattering measurements at grazing incidence. A detailed interface analysis is made from the results of the last two techniques. The Fresnel optical computational code and a DWBA extension to MLs of Sinha's theory of the diffuse scattering from a rough surface were used for this analysis. The presence of a partial vertical conformity of the interface profiles was incorporated by a modification of Spiller's model and phenomenologically, too. rms interface roughness does not change with x and the reflectivity decreases by 30\% on the 1st Bragg maximum in the as-deposited state comparing x = 0.67 with x = 0. The lateral correlation length A decreases dramatically from 120 nm for x = 0 to 10 nm for x = 0.67. RTA brings about a strong decrease of Lambda for x = 0 and 0.33 resulting into a slight compositional dependence of Lambda only. The ML period decreases by up to 13\% due to the annealing-out of the excess free volume from the amorphous structure before the MLs collapse. With respect to this collapse the ML with x = 0.67 is thermally the most stable from our samples. The `'true'' interface roughness increases on RTA and the interface phenomena cannot be described simply by the Fick laws. Vertical interface conformity is absent or only very weak and is not principally affected by RTA. However, the fractal behaviour of the interfaces may appear. There are some interesting dynamic effects present in the diffuse scattering results which we were able to simulate within DWBA, too.}",
	issn = "{0255-5476}",
	isbn = "{0-87849-742-0}",
	times-cited = "{2}",
	unique-id = "{ISI:A1996BG37Z00085}"
}

V Holy, AA Darhuber, G Bauer, PD Wang, YP Song, CMS Torres and MC Holland. Elastic strains in GaAs/AlAs quantum dots studied by high resolution X-ray diffraction. SOLID-STATE ELECTRONICS 40(1-8, SI):373-377, 1996. 7th International Conference on Modulated Semiconductor Structures (MSS-7), MADRID, SPAIN, JUL 10-14, 1995. BibTeX

@article{ ISI:A1996UN20700078,
	author = "Holy, V and Darhuber, AA and Bauer, G and Wang, PD and Song, YP and Torres, CMS and Holland, MC",
	title = "{Elastic strains in GaAs/AlAs quantum dots studied by high resolution X-ray diffraction}",
	journal = "{SOLID-STATE ELECTRONICS}",
	year = "{1996}",
	volume = "{40}",
	number = "{1-8, SI}",
	pages = "{373-377}",
	note = "{7th International Conference on Modulated Semiconductor Structures (MSS-7), MADRID, SPAIN, JUL 10-14, 1995}",
	organization = "{Univ Autonoma Madrid; Comision Interminist Cienciaa \& Tecnol; Minist Educ \& Ciencia; Consejo Super Investigac Cient; Comunidad Autonoma Madrid; Univ Politecn Madrid; European Community; IUPAP; ATT Microelectron Espana; IBM, Espana; Instrumat Espanola S A}",
	abstract = "{We have studied a GaAs/AlAs quantum dot array using reciprocal space mapping around the (004) and (<(11) over bar3>) reciprocal lattice points. Both the coherently and the diffusely scattered X-ray intensities were analysed by performing two-dimensional model calculations. From the distribution of the diffracted intensities we deduced the average strain status in the dots. From the numerical simulations it is evident that random elastic strain fields are present, which extend through almost the whole volume of the quantum dot. The simulations of the X-ray measurements revealed that the crystalline part of the dots is considerably smaller as scanning electron micrographs would indicate, namely 50 nm instead of 65 nm, respectively.}",
	doi = "{10.1016/0038-1101(95)00331-2}",
	issn = "{0038-1101}",
	researcherid-numbers = "{Sotomayor Torres, Clivia/E-8418-2010 Darhuber, Anton/A-4692-2010}",
	times-cited = "{0}",
	unique-id = "{ISI:A1996UN20700078}"
}

G Bauer, AA Darhuber and V Holy. Structural characterization of reactive ion etched semiconductor nanostructures using x-ray reciprocal space mapping. In SM Prokes, RC Cammarata, KL Wang and A Christou (eds.). SURFACE/INTERFACE AND STRESS EFFECTS IN ELECTRONIC MATERIALS NANOSTRUCTURES 405. 1996, 359-370. Symposium on Surface/Interface and Stress Effects in Electronic Material Nanostructures, at the 1995 MRS Fall Meeting, BOSTON, MA, NOV 27-DEC 01, 1995. BibTeX

@inproceedings{ ISI:A1996BG31L00051,
	author = "Bauer, G and Darhuber, AA and Holy, V",
	editor = "{Prokes, SM and Cammarata, RC and Wang, KL and Christou, A}",
	title = "{Structural characterization of reactive ion etched semiconductor nanostructures using x-ray reciprocal space mapping}",
	booktitle = "{SURFACE/INTERFACE AND STRESS EFFECTS IN ELECTRONIC MATERIALS NANOSTRUCTURES}",
	series = "{MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS}",
	year = "{1996}",
	volume = "{405}",
	pages = "{359-370}",
	note = "{Symposium on Surface/Interface and Stress Effects in Electronic Material Nanostructures, at the 1995 MRS Fall Meeting, BOSTON, MA, NOV 27-DEC 01, 1995}",
	organization = "{Mat Res Soc}",
	issn = "{0272-9172}",
	isbn = "{1-55899-308-8}",
	times-cited = "{0}",
	unique-id = "{ISI:A1996BG31L00051}"
}

V Holy. Dynamical theory of highly asymmetric X-ray diffraction. In A Authier, S Lagomarsino and BK Tanner (eds.). X-RAY AND NEUTRON DYNAMICAL DIFFRACTION: THEORY AND APPLICATIONS 357. 1996, 33-42. NATO Advanced Study Institute on X-Ray and Neutron Dynamical Diffraction - Theory and Applications, EIRCE, ITALY, APR 09-22, 1996. BibTeX

@inproceedings{ ISI:A1996BH02V00002,
	author = "Holy, V",
	editor = "{Authier, A and Lagomarsino, S and Tanner, BK}",
	title = "{Dynamical theory of highly asymmetric X-ray diffraction}",
	booktitle = "{X-RAY AND NEUTRON DYNAMICAL DIFFRACTION: THEORY AND APPLICATIONS}",
	series = "{NATO ADVANCED SCIENCE INSTITUTES SERIES, SERIES B, PHYSICS}",
	year = "{1996}",
	volume = "{357}",
	pages = "{33-42}",
	note = "{NATO Advanced Study Institute on X-Ray and Neutron Dynamical Diffraction - Theory and Applications, EIRCE, ITALY, APR 09-22, 1996}",
	organization = "{NATO}",
	issn = "{0258-1221}",
	isbn = "{0-306-45501-3}",
	times-cited = "{5}",
	unique-id = "{ISI:A1996BH02V00002}"
}

V Holy and P Mikulik. Theoretical description of multiple crystal arrangements. In A Authier, S Lagomarsino and BK Tanner (eds.). X-RAY AND NEUTRON DYNAMICAL DIFFRACTION: THEORY AND APPLICATIONS 357. 1996, 259-268. NATO Advanced Study Institute on X-Ray and Neutron Dynamical Diffraction - Theory and Applications, EIRCE, ITALY, APR 09-22, 1996. BibTeX

@inproceedings{ ISI:A1996BH02V00018,
	author = "Holy, V and Mikulik, P",
	editor = "{Authier, A and Lagomarsino, S and Tanner, BK}",
	title = "{Theoretical description of multiple crystal arrangements}",
	booktitle = "{X-RAY AND NEUTRON DYNAMICAL DIFFRACTION: THEORY AND APPLICATIONS}",
	series = "{NATO ADVANCED SCIENCE INSTITUTES SERIES, SERIES B, PHYSICS}",
	year = "{1996}",
	volume = "{357}",
	pages = "{259-268}",
	note = "{NATO Advanced Study Institute on X-Ray and Neutron Dynamical Diffraction - Theory and Applications, EIRCE, ITALY, APR 09-22, 1996}",
	organization = "{NATO}",
	issn = "{0258-1221}",
	isbn = "{0-306-45501-3}",
	researcherid-numbers = "{Mikulik, Petr/E-1791-2012}",
	times-cited = "{7}",
	unique-id = "{ISI:A1996BH02V00018}"
}

JH Li, V Holy, G Bauer, M Hohnisch, HJ Herzog and F Schaffler. Strain relaxation and misfit dislocations in compositionally graded Si1-xGex layers on Si(001). JOURNAL OF CRYSTAL GROWTH 157(1-4):137-141, Prosinec 1995. 6th International Symposium on Silicon Molecular Beam Epitaxy of the 1995 E-MRS Spring Conference, STRASBOURG, FRANCE, MAY 22-26, 1995. BibTeX

@article{ ISI:A1995TN78500028,
	author = "Li, JH and Holy, V and Bauer, G and Hohnisch, M and Herzog, HJ and Schaffler, F",
	title = "{Strain relaxation and misfit dislocations in compositionally graded Si1-xGex layers on Si(001)}",
	journal = "{JOURNAL OF CRYSTAL GROWTH}",
	year = "{1995}",
	volume = "{157}",
	number = "{1-4}",
	pages = "{137-141}",
	month = "{DEC}",
	note = "{6th International Symposium on Silicon Molecular Beam Epitaxy of the 1995 E-MRS Spring Conference, STRASBOURG, FRANCE, MAY 22-26, 1995}",
	organization = "{Council Europe; Commiss European Communities; E MRS}",
	abstract = "{Strain relaxation behavior of molecular beam epitaxy grown compositionally graded Si1-xGex epilayers on Si(001) at 750 degrees C has been investigated by using a high-resolution X-ray reciprocal space mapping technique. The depth profiles of the residual strain and the density of misfit dislocations of the samples were determined and a comparison with a theoretical model {[}J. Tersoff, Appl. Phys. Lett. 62 (1993) 693] is presented.}",
	doi = "{10.1016/0022-0248(95)00402-5}",
	issn = "{0022-0248}",
	times-cited = "{7}",
	unique-id = "{ISI:A1995TN78500028}"
}

JH LI, V HOLY, G BAUER, JF NUTZEL and G ABSTREITER. INVESTIGATION OF STRAIN RELAXATION OF GE1-XSIX EPILAYERS ON GE(001) BY HIGH-RESOLUTION X-RAY RECIPROCAL SPACE MAPPING. SEMICONDUCTOR SCIENCE AND TECHNOLOGY 10(12):1621-1628, Prosinec 1995. BibTeX

@article{ ISI:A1995TJ50800010,
	author = "LI, JH and HOLY, V and BAUER, G and NUTZEL, JF and ABSTREITER, G",
	title = "{INVESTIGATION OF STRAIN RELAXATION OF GE1-XSIX EPILAYERS ON GE(001) BY HIGH-RESOLUTION X-RAY RECIPROCAL SPACE MAPPING}",
	journal = "{SEMICONDUCTOR SCIENCE AND TECHNOLOGY}",
	year = "{1995}",
	volume = "{10}",
	number = "{12}",
	pages = "{1621-1628}",
	month = "{DEC}",
	abstract = "{The evolution of strain relaxation of molecular-beam-epitaxy-grown Ge1-xSix layered structures deposited on Ge(001) substrates was investigated by employing high-resolution x-ray reciprocal-space mapping. In contrast to the commonly investigated SiGe alloy layers on Si(001) substrates, in this case, the Ge1-xSix alloy layers experience a bi-axial tensile strain due to the larger lattice constant of the Ge substrate, rather than a bi-axial compressive strain. The structures consist of a linearly graded Ge1-xSix alloy buffer (B1), followed by an alloy buffer layer (B2) with constant Si content. For the four samples investigated, the grading rates of B1 were varied in the range 13.2-32.5\% Si mu m(-1), and the thicknesses were varied in the range 0.4-1.8 mu m. From our measurements, it turns out that the lower part of the graded buffer B1 close to the Ge(001) substrate is completely strain-relaxed, whereas the top part of the graded buffer and the uniform alloy buffer (B2) are only partly strain-relatxed, showing a linear increase in the in-plane strain towards the surface. In addition, the measured maximum in-plane strains at the surface depend on the grading rate of B1 as well as on the thickness of B2. These strains turn out to be much larger than those predicted by existing equilibrium theories for strain relaxation in epitaxial layers.}",
	doi = "{10.1088/0268-1242/10/12/010}",
	issn = "{0268-1242}",
	times-cited = "{4}",
	unique-id = "{ISI:A1995TJ50800010}"
}

P MIKULIK, V HOLY, J KUBENA and K PLOOG. X-RAY-DIFFRACTION ON FIBONACCI SUPERLATTICES. ACTA CRYSTALLOGRAPHICA SECTION A 51(Part 6):825-830, 1995. BibTeX

@article{ ISI:A1995TG64700003,
	author = "MIKULIK, P and HOLY, V and KUBENA, J and PLOOG, K",
	title = "{X-RAY-DIFFRACTION ON FIBONACCI SUPERLATTICES}",
	journal = "{ACTA CRYSTALLOGRAPHICA SECTION A}",
	year = "{1995}",
	volume = "{51}",
	number = "{Part 6}",
	pages = "{825-830}",
	month = "{NOV 1}",
	abstract = "{The exact diffraction curve of the Fibonacci superlattice is calculated using the semi-kinematical approximation of dynamical X-ray diffraction. The properties of the discrete Fourier transform of quasiperiodically arranged layers are employed to derive explicit approximate formulae for the diffracted intensity and the angular positions of peaks. The exact and approximate curves are compared by a numerical simulation and a good agreement is found. The measurement of the diffraction curve was performed on the generalized Fibonacci superlattice built by stacked Fibonacci generations. This superlattice belongs to the same class of local isomorphism as the Fibonacci superlattice if both are infinitely thick. The explicit approximate formulae enabled the fitting of the structural parameters of the superlattice even in the low-resolution experimental set-up when the fitting of the whole measured diffraction curve was not possible.}",
	doi = "{10.1107/S0108767395003229}",
	issn = "{0108-7673}",
	researcherid-numbers = "{Mikulik, Petr/E-1791-2012}",
	times-cited = "{3}",
	unique-id = "{ISI:A1995TG64700003}"
}

V HOLY, JH LI, G BAUER, F SCHAFFLER and HJ HERZOG. DIFFUSE-X-RAY SCATTERING FROM MISFIT DISLOCATIONS IN SIGE EPITAXIAL LAYERS WITH GRADED GE CONTENT. JOURNAL OF APPLIED PHYSICS 78(8):5013-5021, 1995. BibTeX

@article{ ISI:A1995RY39600030,
	author = "HOLY, V and LI, JH and BAUER, G and SCHAFFLER, F and HERZOG, HJ",
	title = "{DIFFUSE-X-RAY SCATTERING FROM MISFIT DISLOCATIONS IN SIGE EPITAXIAL LAYERS WITH GRADED GE CONTENT}",
	journal = "{JOURNAL OF APPLIED PHYSICS}",
	year = "{1995}",
	volume = "{78}",
	number = "{8}",
	pages = "{5013-5021}",
	month = "{OCT 15}",
	abstract = "{A theory has been developed describing x-ray diffuse scattering from misfit dislocations in epitaxial layers. This approach has been used for explaining the origins of diffuse x-ray scattering from SiGe layers with linearly graded Ge content. The distribution of the diffusely scattered intensity in reciprocal plane measured by triple-axis x-ray diffractometry has been compared with theoretical predictions and a good agreement has been achieved. It is demonstrated that the main part of the diffusely scattered intensity originates from random strains caused by misfit dislocations at the substrate-epilayer interface or in the relaxed part of the compositionally graded layers. The contribution of the threading dislocation segments to the diffuse scattering is rather small. (C) 1995 American Institute of Physics.}",
	issn = "{0021-8979}",
	times-cited = "{32}",
	unique-id = "{ISI:A1995RY39600030}"
}

AA DARHUBER, V HOLY, G BAUER, PD WANG, YP SONG, CMS TORRES and MC HOLLAND. CRYSTALLINE AND QUASI-CRYSTALLINE PATTERNS IN X-RAY-DIFFRACTION FROM PERIODIC ARRAYS OF QUANTUM DOTS. EUROPHYSICS LETTERS 32(2):131-136, 1995. BibTeX

@article{ ISI:A1995TA80300007,
	author = "DARHUBER, AA and HOLY, V and BAUER, G and WANG, PD and SONG, YP and TORRES, CMS and HOLLAND, MC",
	title = "{CRYSTALLINE AND QUASI-CRYSTALLINE PATTERNS IN X-RAY-DIFFRACTION FROM PERIODIC ARRAYS OF QUANTUM DOTS}",
	journal = "{EUROPHYSICS LETTERS}",
	year = "{1995}",
	volume = "{32}",
	number = "{2}",
	pages = "{131-136}",
	month = "{OCT 10}",
	abstract = "{The structural properties of a square periodic array of quantum dots of a GaAs/AlAs superlattice were studied by X-ray diffractometry. If the azimuthal direction of the primary beam can be expressed by integer Miller indices, the profile is perfectly periodic. However, if its azimuthal orientation phi is determined by tg(phi) approximate to 0.618 (the golden mean value), the diffraction maxima exhibit Fibonacci sequences in reciprocal space, ie. a quasi-periodic diffraction curve.}",
	doi = "{10.1209/0295-5075/32/2/007}",
	issn = "{0295-5075}",
	researcherid-numbers = "{Sotomayor Torres, Clivia/E-8418-2010 Darhuber, Anton/A-4692-2010 Schaff, William/B-5839-2009}",
	times-cited = "{1}",
	unique-id = "{ISI:A1995TA80300007}"
}

M Libezny, M Caymax, A Brablec, J Kubena, V Holy, J Poortmans, J Nijs and J Vanhellemont. Spectroellipsometric characterisation of thin epitaxial Si(1-x)Ge(x)layers. MATERIALS SCIENCE AND TECHNOLOGY 11(10):1065-1070, Říjen 1995. 1st International Conference on Materials for Microelectronics, BARCELONA, SPAIN, OCT 17-19, 1994. BibTeX

@article{ ISI:A1995TN16900013,
	author = "Libezny, M and Caymax, M and Brablec, A and Kubena, J and Holy, V and Poortmans, J and Nijs, J and Vanhellemont, J",
	title = "{Spectroellipsometric characterisation of thin epitaxial Si(1-x)Ge(x)layers}",
	journal = "{MATERIALS SCIENCE AND TECHNOLOGY}",
	year = "{1995}",
	volume = "{11}",
	number = "{10}",
	pages = "{1065-1070}",
	month = "{OCT}",
	note = "{1st International Conference on Materials for Microelectronics, BARCELONA, SPAIN, OCT 17-19, 1994}",
	organization = "{Inst Mat}",
	abstract = "{Spectroscopic ellipsometry is assessed as a tool for rapid and non-destructive determination of thicknesses and/for Ge concentrations of Si1-xGex epitaxial layers. Ail algorithm for the extraction of optical constants from ellipsometric measurements carried out on strained uncapped Si1-xGex layers is developed. The smoothness of the extracted spectra of the Si0.92Ge0.08 optical constants indicates very high accuracy even in the region of the weak absorption. Spectroscopic ellipsometry measurements of Si capped Si1-xGex layers are interpreted using the established reference data and correlated with results from other techniques. The accuracy of this interpretation for the spectroellipsometriczetric determination of Ge concentration and Si1-xGex layer thickness is numerically predicted. It is suggested that spectroscopic ellipsometry can also be applied to capped Si1-xGex layers if more accurate reference data in the low absorption legion become available.}",
	issn = "{0267-0836}",
	researcherid-numbers = "{Vanhellemont, Jan/F-1635-2011}",
	times-cited = "{0}",
	unique-id = "{ISI:A1995TN16900013}"
}

V HOLY, AA DARHUBER, G BAUER, PD WANG, YP SONG, CMS TORRES and MC HOLLAND. ELASTIC STRAINS IN GAAS/ALAS QUANTUM DOTS STUDIED BY HIGH-RESOLUTION X-RAY-DIFFRACTION. PHYSICAL REVIEW B 52(11):8348-8357, 1995. BibTeX

@article{ ISI:A1995RV81800089,
	author = "HOLY, V and DARHUBER, AA and BAUER, G and WANG, PD and SONG, YP and TORRES, CMS and HOLLAND, MC",
	title = "{ELASTIC STRAINS IN GAAS/ALAS QUANTUM DOTS STUDIED BY HIGH-RESOLUTION X-RAY-DIFFRACTION}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{1995}",
	volume = "{52}",
	number = "{11}",
	pages = "{8348-8357}",
	month = "{SEP 15}",
	abstract = "{We have studied a GaAs/AlAs periodic quantum dot array (fabricated by electron beam lithography and reactive ion etching) using high-resolution x-ray reciprocal space mapping around the (004) and ((\$) over bar 1 (\$) over bar 13) reciprocal lattice points. Both the coherently and the diffusely scattered x-ray intensities were analyzed by performing two-dimensional model calculations and comparing them with the measured reciprocal space maps of the diffracted intensity. From the distribution of the diffracted intensities we deduced the average strain status in the dots. From the numerical simulations it is evident that random elastic strain fields are present, which extend through almost the whole volume of the quantum dot. The simulations of the x-ray measurements revealed that the crystalline part of the dots is considerably smaller as scanning electron micrographs would indicate, namely, 50 nm instead of 65 nm, respectively.}",
	doi = "{10.1103/PhysRevB.52.8348}",
	issn = "{0163-1829}",
	researcherid-numbers = "{Sotomayor Torres, Clivia/E-8418-2010 Darhuber, Anton/A-4692-2010}",
	times-cited = "{44}",
	unique-id = "{ISI:A1995RV81800089}"
}

JH LI, V HOLY, G BAUER, JF NUTZEL and G ABSTREITER. STRAIN RELAXATION OF GE1-XSIX BUFFER SYSTEMS GROWN ON GE(001). APPLIED PHYSICS LETTERS 67(6):789-791, 1995. BibTeX

@article{ ISI:A1995RN01700020,
	author = "LI, JH and HOLY, V and BAUER, G and NUTZEL, JF and ABSTREITER, G",
	title = "{STRAIN RELAXATION OF GE1-XSIX BUFFER SYSTEMS GROWN ON GE(001)}",
	journal = "{APPLIED PHYSICS LETTERS}",
	year = "{1995}",
	volume = "{67}",
	number = "{6}",
	pages = "{789-791}",
	month = "{AUG 7}",
	abstract = "{We have investigated the strain relaxation behavior of biaxial tensile strained Ge1-xSix buffer systems grown on Ge (001) by a high-resolution x-ray reciprocal space mapping technique. The molecular beam epitaxy grown structures contain a linearly graded buffer, followed by a uniform buffer and a modulation-doped heterostructure with a high mobility two-dimensional hole gas in a Ge channel. Our quantitative measurements of the in-plane strain show that the lower part of the graded buffer is completely strain relaxed, while the top part of this region and the uniform alloy buffer are partly strain relaxed showing a linear increase of strain towards to surface. (C) 1995 American Institute of Physics.}",
	doi = "{10.1063/1.115468}",
	issn = "{0003-6951}",
	times-cited = "{6}",
	unique-id = "{ISI:A1995RN01700020}"
}

Z BOCHNICEK, V HOLY, K WOLF, H STANZL and W GEBHARDT. HIGH-RESOLUTION X-RAY-DIFFRACTOMETRY OF ZNTE LAYERS AT ELEVATED-TEMPERATURES. JOURNAL OF APPLIED PHYSICS 78(2):862-867, 1995. BibTeX

@article{ ISI:A1995RH81900028,
	author = "BOCHNICEK, Z and HOLY, V and WOLF, K and STANZL, H and GEBHARDT, W",
	title = "{HIGH-RESOLUTION X-RAY-DIFFRACTOMETRY OF ZNTE LAYERS AT ELEVATED-TEMPERATURES}",
	journal = "{JOURNAL OF APPLIED PHYSICS}",
	year = "{1995}",
	volume = "{78}",
	number = "{2}",
	pages = "{862-867}",
	month = "{JUL 15}",
	issn = "{0021-8979}",
	times-cited = "{4}",
	unique-id = "{ISI:A1995RH81900028}"
}

GT BAUMBACH, S TIXIER, U PIETSCH and V HOLY. GRAZING-INCIDENCE DIFFRACTION FROM MULTILAYERS. PHYSICAL REVIEW B 51(23):16848-16859, 1995. BibTeX

@article{ ISI:A1995RF57000040,
	author = "BAUMBACH, GT and TIXIER, S and PIETSCH, U and HOLY, V",
	title = "{GRAZING-INCIDENCE DIFFRACTION FROM MULTILAYERS}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{1995}",
	volume = "{51}",
	number = "{23}",
	pages = "{16848-16859}",
	month = "{JUN 15}",
	doi = "{10.1103/PhysRevB.51.16848}",
	issn = "{0163-1829}",
	times-cited = "{29}",
	unique-id = "{ISI:A1995RF57000040}"
}

V HOLY, T BAUMBACH and M BESSIERE. INTERFACE ROUGHNESS IN SURFACE-SENSITIVE X-RAY-METHODS. JOURNAL OF PHYSICS D-APPLIED PHYSICS 28(4A, SI):A220-A226, 1995. BibTeX

@article{ ISI:A1995QX64000045,
	author = "HOLY, V and BAUMBACH, T and BESSIERE, M",
	title = "{INTERFACE ROUGHNESS IN SURFACE-SENSITIVE X-RAY-METHODS}",
	journal = "{JOURNAL OF PHYSICS D-APPLIED PHYSICS}",
	year = "{1995}",
	volume = "{28}",
	number = "{4A, SI}",
	pages = "{A220-A226}",
	month = "{APR 14}",
	abstract = "{X-ray reflection, strongly asymmetric x-ray diffraction and grazing incidence x-ray diffraction are extremely sensitive to the state of interfaces of a layered sample. Random structural defects at the interfaces give rise to diffuse x-ray scattering. In this paper, the diffuse x-ray scattering in all three arrangements has been described within a uniform formalism by means of a distorted-wave Born approximation that includes dynamical phenomena influencing the scattering process. The theory has been used for calculating the diffuse scattering from randomly rough multilayers in all these experimental arrangements. In the case of x-ray reflectivity, the results have been compared with experiments and good agreement has been achieved.}",
	doi = "{10.1088/0022-3727/28/4A/043}",
	issn = "{0022-3727}",
	times-cited = "{13}",
	unique-id = "{ISI:A1995QX64000045}"
}

M JERGEL, V HOLY, E MAJKOVA, S LUBY and R SENDERAK. INTERFACE STUDY OF W-SI/SI AND OBLIQUELY DEPOSITED W/SI MULTILAYERS BY GRAZING-INCIDENCE HIGH-RESOLUTION X-RAY-DIFFRACTION. JOURNAL OF PHYSICS D-APPLIED PHYSICS 28(4A, SI):A241-A245, 1995. BibTeX

@article{ ISI:A1995QX64000049,
	author = "JERGEL, M and HOLY, V and MAJKOVA, E and LUBY, S and SENDERAK, R",
	title = "{INTERFACE STUDY OF W-SI/SI AND OBLIQUELY DEPOSITED W/SI MULTILAYERS BY GRAZING-INCIDENCE HIGH-RESOLUTION X-RAY-DIFFRACTION}",
	journal = "{JOURNAL OF PHYSICS D-APPLIED PHYSICS}",
	year = "{1995}",
	volume = "{28}",
	number = "{4A, SI}",
	pages = "{A241-A245}",
	month = "{APR 14}",
	abstract = "{X-ray reflectivity and diffuse scattering measurements at grazing incidence including 2 theta and omega scans were done using Cu K alpha(1) radiation on W/Si multilayers deposited obliquely at different angles and on W1-xSix/Si multilayers of different compositions. The reflectivity and omega scans were simulated by the Fresnel optical computational code and within the distorted-wave Born approximation, taking the vertical roughness correlation into account, respectively. The root-mean-square interface roughness increases by about 15\% while lateral correlation length decreases by nearly one order of magnitude on increasing deposition angle of the W/Si multilayers up to 47 degrees. Simultaneously the vertical roughness correlation decreases, which is shown also by 2 theta scans. Thus rougher, less correlated interfaces and an increased tendency for agglomeration appear. No root-mean-square interface roughness change was detected for W1-xSix/Si multilayers with x up to x = 0.67 while the lateral correlation length decreased by one order of magnitude, interfaces being more correlated vertically. The interfaces do not exhibit the fractal behaviour in either type of multilayer.}",
	doi = "{10.1088/0022-3727/28/4A/047}",
	issn = "{0022-3727}",
	times-cited = "{13}",
	unique-id = "{ISI:A1995QX64000049}"
}

E KOPPENSTEINER, A SCHUH, G BAUER, V HOLY, GP WATSON and EA FITZGERALD. DETERMINATION OF THREADING DISLOCATION DENSITY IN HETEROEPITAXIAL LAYERS BY DIFFUSE-X-RAY SCATTERING. JOURNAL OF PHYSICS D-APPLIED PHYSICS 28(4A, SI):A114-A119, 1995. BibTeX

@article{ ISI:A1995QX64000024,
	author = "KOPPENSTEINER, E and SCHUH, A and BAUER, G and HOLY, V and WATSON, GP and FITZGERALD, EA",
	title = "{DETERMINATION OF THREADING DISLOCATION DENSITY IN HETEROEPITAXIAL LAYERS BY DIFFUSE-X-RAY SCATTERING}",
	journal = "{JOURNAL OF PHYSICS D-APPLIED PHYSICS}",
	year = "{1995}",
	volume = "{28}",
	number = "{4A, SI}",
	pages = "{A114-A119}",
	month = "{APR 14}",
	abstract = "{An approach for the determination of dislocation densities in epilayers is presented, which is based on the analysis of the two-dimensional intensity distribution of diffuse x-ray scattering measured by triple-axis x-ray reciprocal-space mapping. A new formalism for the simulation of experimental iso-intensity contours is used, which assumes a defect model based on random elastic deformation due to the strain fields of dislocations. The simulation of the two-dimensional intensity contours yields the random strain field from which the energy density stored in the epilayer due to the presence of dislocations is calculated. On the other hand, the self-energy of threading dislocations is calculated assuming 60 degrees (for diamond or zincblende structure) or screw-type dislocations. The threading dislocation density is obtained by dividing the energy density by this self-energy. The method was applied for the analysis of SiGe layers grown on compositionally graded SiGe alloy buffer layers. The diffuse x-ray scattering analysis reproduces the increase in the dislocation densities in the buffer with higher Ge grading rates and yields upper limits for the threading dislocation densities.}",
	doi = "{10.1088/0022-3727/28/4A/022}",
	issn = "{0022-3727}",
	times-cited = "{14}",
	unique-id = "{ISI:A1995QX64000024}"
}

V HOLY, J KUBENA, WW VANDENHOOGENHOF and I VAVRA. EFFECT OF INTERFACIAL-ROUGHNESS REPLICATION ON THE DIFFUSE-X-RAY REFLECTION FROM PERIODICAL MULTILAYERS. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 60(1):93-96, Leden 1995. BibTeX

@article{ ISI:A1995QD67700016,
	author = "HOLY, V and KUBENA, J and VANDENHOOGENHOF, WW and VAVRA, I",
	title = "{EFFECT OF INTERFACIAL-ROUGHNESS REPLICATION ON THE DIFFUSE-X-RAY REFLECTION FROM PERIODICAL MULTILAYERS}",
	journal = "{APPLIED PHYSICS A-MATERIALS SCIENCE \& PROCESSING}",
	year = "{1995}",
	volume = "{60}",
	number = "{1}",
	pages = "{93-96}",
	month = "{JAN}",
	abstract = "{The correlation of roughness profiles of different interfaces in a periodical multilayer affects the reciprocal-space distribution of the diffusely reflected X-ray intensity. This distribution has been calculated by means of the Distorted-Wave Born Approximation (DWBA) method and compared with the results of X-ray reflectometry on periodical metallic multilayers, It has been shown that the measurement of the reciprocal-space distribution of diffusely scattered intensity is a suitable non-destructive method to investigate the roughness replication in multilayers.}",
	doi = "{10.1007/BF01577620}",
	issn = "{0721-7250}",
	times-cited = "{10}",
	unique-id = "{ISI:A1995QD67700016}"
}

I VAVRA, P LOBOTKA, D MACHAJDIK, I POCHABA, LR WALLENBERG, R SENDERAK, M JERGEL, V HOLY and J KUBENA. THE INFLUENCE OF THERMAL-PROCESSING ON STRUCTURAL AND ELECTRICAL-PROPERTIES OF WXSI1-X/SI MULTILAYERS. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT 350(1-2):379-390, 1994. BibTeX

@article{ ISI:A1994PL58800041,
	author = "VAVRA, I and LOBOTKA, P and MACHAJDIK, D and POCHABA, I and WALLENBERG, LR and SENDERAK, R and JERGEL, M and HOLY, V and KUBENA, J",
	title = "{THE INFLUENCE OF THERMAL-PROCESSING ON STRUCTURAL AND ELECTRICAL-PROPERTIES OF WXSI1-X/SI MULTILAYERS}",
	journal = "{NUCLEAR INSTRUMENTS \& METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT}",
	year = "{1994}",
	volume = "{350}",
	number = "{1-2}",
	pages = "{379-390}",
	month = "{OCT 15}",
	abstract = "{Thermal stability of WxSi1-x/Si multilayers (MLs) with x varying from 1 to 0.11 is studied by TEM and LAXS. The structure of the prepared samples is amorphous. Doping of W sublayers with silicon affects the interdiffusion process as well as the crystallization in these sublayers. We investigated these two processes (which have a detrimental influence on e.g. X-ray mirror stability) by annealing our samples at 400-degrees-C for 40 min. The structural changes were monitored by resistance measurement in the temperature range of 1.5-300 K. A correlation between structural and electrical characteristics was found, which is based on the comparison between three different R(T) curves. It is shown in our paper that the R(T) curve of a ML lies between the R(T) curves of two extreme types of single layers. The first single layer is the analogue of a fully intermixed ML and the second one represents a parallel connection of all conductive sublayers. Thus, a simple resistance measurement can give additional information about the quality of interfaces. We claim that in MLs with ultrathin sublayers the reported highest thermal stability of the amorphous mixture W0.72Si0.28 cannot be utilized because interdiffusion dominates over crystallization so that the superlattice structure is not retained.}",
	doi = "{10.1016/0168-9002(94)91186-X}",
	issn = "{0168-9002}",
	researcherid-numbers = "{Wallenberg, Reine/H-5405-2011}",
	times-cited = "{0}",
	unique-id = "{ISI:A1994PL58800041}"
}

E KOPPENSTEINER, A SCHUH, G BAUER, V HOLY, D BELLET and G DOLINO. DIFFUSE-X-RAY SCATTERING FROM P(+) POROUS SILICON BY TRIPLE AXIS DIFFRACTOMETRY. APPLIED PHYSICS LETTERS 65(12):1504-1506, 1994. BibTeX

@article{ ISI:A1994PG92500010,
	author = "KOPPENSTEINER, E and SCHUH, A and BAUER, G and HOLY, V and BELLET, D and DOLINO, G",
	title = "{DIFFUSE-X-RAY SCATTERING FROM P(+) POROUS SILICON BY TRIPLE AXIS DIFFRACTOMETRY}",
	journal = "{APPLIED PHYSICS LETTERS}",
	year = "{1994}",
	volume = "{65}",
	number = "{12}",
	pages = "{1504-1506}",
	month = "{SEP 19}",
	abstract = "{Strain and microstructure of porous silicon on (001) wafers with different porosity were investigated by triple axis x-ray diffractometry using an instrumental resolution of 12 arcsec. The Bragg diffraction peaks arising from the porous Si contain information both on the mean strain (1.29-2.95 X 10(-3)) and on strain gradients (0.70-1.42 X 10(-3)) in these samples. In specimens with a porosity of 60\% the pores are shown to be elongated over about 200 nm along the {[}001] direction, and over 50 nm in directions parallel to the growth plane. It is demonstrated that the correlation function for the pores has an extension along the {[}001] direction which is about a factor of 4 larger than along the {[}010] direction. From measurements of the intensity distribution of diffuse x-ray scattering a crystallographical damage in the silicon skeleton can be excluded. Regions of the porous layer near the interface to air are shown to be tensilely strained both along and perpendicular to the substrate normal.}",
	doi = "{10.1063/1.112026}",
	issn = "{0003-6951}",
	times-cited = "{13}",
	unique-id = "{ISI:A1994PG92500010}"
}

W PLOTZ, V HOLY, WVD HOOGENHOF and K LISCHKA. X-RAY CHARACTERIZATION OF SEMICONDUCTOR SURFACES AND INTERFACES. JOURNAL DE PHYSIQUE III 4(9):1565-1571, Září 1994. BibTeX

@article{ ISI:A1994PH37300008,
	author = "PLOTZ, W and HOLY, V and HOOGENHOF, WVD and LISCHKA, K",
	title = "{X-RAY CHARACTERIZATION OF SEMICONDUCTOR SURFACES AND INTERFACES}",
	journal = "{JOURNAL DE PHYSIQUE III}",
	year = "{1994}",
	volume = "{4}",
	number = "{9}",
	pages = "{1565-1571}",
	month = "{SEP}",
	abstract = "{A method for the characterization of surfaces and interfaces on a nanometer scale by combining specular and nonspecular glancing incidence X-ray scattering is presented. The application of the method to crystalline silicon, polycrystalline silicon, and a thin gold layer on a silicon substrate is reported.}",
	doi = "{10.1051/jp3:1994223}",
	issn = "{1155-4320}",
	times-cited = "{6}",
	unique-id = "{ISI:A1994PH37300008}"
}

V HOLY, K WOLF, M KASTNER, H STANZL and W GEBHARDT. X-RAY TRIPLE-CRYSTAL DIFFRACTOMETRY OF DEFECTS IN EPITAXIAL LAYERS. JOURNAL OF APPLIED CRYSTALLOGRAPHY 27(Part 4):551-557, 1994. BibTeX

@article{ ISI:A1994PB26500015,
	author = "HOLY, V and WOLF, K and KASTNER, M and STANZL, H and GEBHARDT, W",
	title = "{X-RAY TRIPLE-CRYSTAL DIFFRACTOMETRY OF DEFECTS IN EPITAXIAL LAYERS}",
	journal = "{JOURNAL OF APPLIED CRYSTALLOGRAPHY}",
	year = "{1994}",
	volume = "{27}",
	number = "{Part 4}",
	pages = "{551-557}",
	month = "{AUG 1}",
	abstract = "{A new method is developed for calculating the correlation function of the random deformation in heteroepitaxic layers and superlattices from measurements of iso-intensity contours of diffuse X-ray scattering. The method is based on the optical coherence approach and kinematical diffraction theory. Structural models have been found that enable the correlation functions to be calculated for various types of randomly placed defects (mosaic blocks and random elastic deformation). The applicability of the method has been demonstrated by measuring the diffuse X-ray scattering from a ZnTe layer grown on a GaAs substrate. The parameters characterizing the defects were obtained from a comparison of the calculated correlation function with theoretical models.}",
	doi = "{10.1107/S0021889894000208}",
	issn = "{0021-8898}",
	times-cited = "{28}",
	unique-id = "{ISI:A1994PB26500015}"
}

V HOLY and T BAUMBACH. NONSPECULAR X-RAY REFLECTION FROM ROUGH MULTILAYERS. PHYSICAL REVIEW B 49(15):10668-10676, 1994. BibTeX

@article{ ISI:A1994NJ75600072,
	author = "HOLY, V and BAUMBACH, T",
	title = "{NONSPECULAR X-RAY REFLECTION FROM ROUGH MULTILAYERS}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{1994}",
	volume = "{49}",
	number = "{15}",
	pages = "{10668-10676}",
	month = "{APR 15}",
	abstract = "{X-ray reflection from periodical multilayers with randomly rough interfaces has been described within the distorted-wave Born approximation. The method is suitable for calculating both specular x-ray reflection and nonspecular (diffuse) scattering. In this paper, both in-plane and vertical correlations of the roughness profiles have been considered and it has been demonstrated that the vertical roughness correlation substantially affects the nonspecular scattering. The theory can explain resonant effects observed in the beam scattered nonspecularly from a periodical multilayer. The theoretical approach has been used for the study of interfacial roughness in a long-periodic AlAs/GaAs multilayer and good agreement has been achieved between the experimental results and the theory.}",
	doi = "{10.1103/PhysRevB.49.10668}",
	issn = "{0163-1829}",
	times-cited = "{388}",
	unique-id = "{ISI:A1994NJ75600072}"
}

E KOPPENSTEINER, G BAUER, V HOLY and E KASPER. HIGH-RESOLUTION X-RAY TRIPLE AXIS DIFFRACTOMETRY OF SHORT-PERIOD SIMGEN SUPERLATTICES. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 33(4B):2322-2328, Duben 1994. 5th International Symposium on Silicon Molecular Beam Epitaxy (SIMBE-5), at the 1993 International Conference on Solid State Devices and Materials (SSDM 93), NIPPON CONVENT CTR, MAKUHARI MESSE, JAPAN, AUG 30-SEP 01, 1993. BibTeX

@article{ ISI:A1994NR95900038,
	author = "KOPPENSTEINER, E and BAUER, G and HOLY, V and KASPER, E",
	title = "{HIGH-RESOLUTION X-RAY TRIPLE AXIS DIFFRACTOMETRY OF SHORT-PERIOD SIMGEN SUPERLATTICES}",
	journal = "{JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES \& REVIEW PAPERS}",
	year = "{1994}",
	volume = "{33}",
	number = "{4B}",
	pages = "{2322-2328}",
	month = "{APR}",
	note = "{5th International Symposium on Silicon Molecular Beam Epitaxy (SIMBE-5), at the 1993 International Conference on Solid State Devices and Materials (SSDM 93), NIPPON CONVENT CTR, MAKUHARI MESSE, JAPAN, AUG 30-SEP 01, 1993}",
	organization = "{JAPAN SOC APPL PHYS}",
	abstract = "{Double crystal and triple axis X-ray reciprocal space mapping were used to characterize in detail the structural properties of short period Si9Ge6 superlattices grown by molecular beam epitaxy (MBE) on 1.3 mum thick step-graded SiGe alloy buffers resulting in reduced dislocation densities. Precise strain data were extracted from two-dimensional reciprocal space maps around (004) and (224) reciprocal lattice points (RELP's). From the distribution of diffusely scattered intensity around reciprocal lattice points the correlation function of the deformation field due to structural defects was calculated using a model based on the kinematical theory of X-ray diffraction and on a formalism from statistical optics. Two types of extreme models were defined f or the defect structure, and from simulations to the correlation function calculated from the diffuse X-ray scattering (DXS) limiting mosaicity parameters were extracted.}",
	doi = "{10.1143/JJAP.33.2322}",
	issn = "{0021-4922}",
	times-cited = "{4}",
	unique-id = "{ISI:A1994NR95900038}"
}

M LANG, D SCHIKORA, T WIDMER, C GIFTGE, A FORSTNER, V HOLY, J HUMENBERGER, K LISCHKA, G BRUNTHALER, H SITTER and M VONORTENBERG. STRUCTURAL-PROPERTIES OF PERFECT ZNTE EPILAYERS ON (001) GAAS SUBSTRATES. JOURNAL OF CRYSTAL GROWTH 138(1-4):81-85, Duben 1994. 6th International Conference on I-VI Compounds and Related Optoelectronic Materials, NEWPORT, RI, SEP 13-17, 1993. BibTeX

@article{ ISI:A1994NN99700015,
	author = "LANG, M and SCHIKORA, D and WIDMER, T and GIFTGE, C and FORSTNER, A and HOLY, V and HUMENBERGER, J and LISCHKA, K and BRUNTHALER, G and SITTER, H and VONORTENBERG, M",
	title = "{STRUCTURAL-PROPERTIES OF PERFECT ZNTE EPILAYERS ON (001) GAAS SUBSTRATES}",
	journal = "{JOURNAL OF CRYSTAL GROWTH}",
	year = "{1994}",
	volume = "{138}",
	number = "{1-4}",
	pages = "{81-85}",
	month = "{APR}",
	note = "{6th International Conference on I-VI Compounds and Related Optoelectronic Materials, NEWPORT, RI, SEP 13-17, 1993}",
	abstract = "{We report on molecular beam epitaxy and hot-wall beam epitaxy growth of ZnTe epilayers on (001) GaAs substrates. The surface reconstruction of (001) ZnTe is measured by reflection high-energy electron diffraction (RHEED). The RHEED pattern as a function of the beam equivalent pressure ratio P(Te)/P(Zn) and substrate temperature is studied. Mosaic structures of the ZnTe epilayers grown under optimized conditions are investigated quantitatively by high resolution X-ray diffraction and photoluminescence. These data, which are related to the three-dimensional perfection of epilayers, are contrasted to RHEED measurements of the surface morphology.}",
	doi = "{10.1016/0022-0248(94)90784-6}",
	issn = "{0022-0248}",
	times-cited = "{13}",
	unique-id = "{ISI:A1994NN99700015}"
}

GT BAUMBACH, V HOLY, U PIETSCH and M GAILHANOU. THE INFLUENCE OF SPECULAR INTERFACE REFLECTION ON GRAZING-INCIDENCE X-RAY-DIFFRACTION AND DIFFUSE-SCATTERING FROM SUPERLATTICES. PHYSICA B 198(1-3):249-252, Duben 1994. International Conference on Surface X-Ray and Neutron Scattering (SXNS-3), DUBNA, RUSSIA, JUN 24-29, 1993. BibTeX

@article{ ISI:A1994NR01300061,
	author = "BAUMBACH, GT and HOLY, V and PIETSCH, U and GAILHANOU, M",
	title = "{THE INFLUENCE OF SPECULAR INTERFACE REFLECTION ON GRAZING-INCIDENCE X-RAY-DIFFRACTION AND DIFFUSE-SCATTERING FROM SUPERLATTICES}",
	journal = "{PHYSICA B}",
	year = "{1994}",
	volume = "{198}",
	number = "{1-3}",
	pages = "{249-252}",
	month = "{APR}",
	note = "{International Conference on Surface X-Ray and Neutron Scattering (SXNS-3), DUBNA, RUSSIA, JUN 24-29, 1993}",
	organization = "{JOINT INST NUCL RES, FRANK LAB NEUTRON PHYS; COMMISS EUROPEAN COMMUNITY}",
	abstract = "{Superlattices (SL) with a large difference in the refractive index between the alternating layers give rise to specular reflection from the intrinsic interfaces of the SL which proves very efficient for small incident or exit angles near the critical angle of total external reflection. This influences the intensity of grazing incidence X-ray diffraction (GID) and non-specular X-ray scattering (NSXR). Additional peaks were found besides the common features. They are explained by waves scattered in transmission geometries and measured above the sample surface due to subsequent specular interface reflection. The experimental findings are interpreted by Umweganregung in terms of the distorted wave Born approximation (DWBA).}",
	doi = "{10.1016/0921-4526(94)90172-4}",
	issn = "{0921-4526}",
	times-cited = "{9}",
	unique-id = "{ISI:A1994NR01300061}"
}

E KOPPENSTEINER, P HAMBERGER, G BAUER, V HOLY, H KIBBEL, H PRESTING and E KASPER. QUANTITATIVE-ANALYSIS OF STRAIN RELAXATION AND MOSAICITY IN SHORT-PERIOD SI(M)GE(N) SUPERLATTICES USING RECIPROCAL SPACE MAPPING BY X-RAY-DIFFRACTION. SOLID-STATE ELECTRONICS 37(4-6):629-634, 1994. 6th International Conference on Modulated Semiconductor Structures, GARMISCH PARTENKIR, GERMANY, AUG 23-27, 1993. BibTeX

@article{ ISI:A1994NE79600027,
	author = "KOPPENSTEINER, E and HAMBERGER, P and BAUER, G and HOLY, V and KIBBEL, H and PRESTING, H and KASPER, E",
	title = "{QUANTITATIVE-ANALYSIS OF STRAIN RELAXATION AND MOSAICITY IN SHORT-PERIOD SI(M)GE(N) SUPERLATTICES USING RECIPROCAL SPACE MAPPING BY X-RAY-DIFFRACTION}",
	journal = "{SOLID-STATE ELECTRONICS}",
	year = "{1994}",
	volume = "{37}",
	number = "{4-6}",
	pages = "{629-634}",
	month = "{APR-JUN}",
	note = "{6th International Conference on Modulated Semiconductor Structures, GARMISCH PARTENKIR, GERMANY, AUG 23-27, 1993}",
	organization = "{TECH UNIV MUNCHEN, WALTER SCHOTTKY INST}",
	abstract = "{Double crystal and triple axis X-ray diffractometry was used to characterize in detail the structural properties of several short period Si9Ge6 and Si6Ge4 superlattices grown by molecular beam epitaxy on thick step-graded SiGe alloy buffers resulting in reduced dislocation densities. Precise strain data were extracted from 2-dimensional reciprocal space maps around (004) and (224) reciprocal lattice points. Due to the much higher instrumental resolution of triple axis diffractometry Bragg reflection peaks from buffers and supperlattices, which often overlap in such almost free-standing superlattices, have been clearly separated experimentally, and minute changes in strain status and mean Ge content are determined. From the distribution of diffusely scattered intensity around reciprocal lattice points the correlation function of the deformation field due to structural defects has been calculated using a model based on the kinematical theory of X-ray diffraction and on a formalism well known from statistical optics.}",
	doi = "{10.1016/0038-1101(94)90263-1}",
	issn = "{0038-1101}",
	times-cited = "{0}",
	unique-id = "{ISI:A1994NE79600027}"
}

V HOLY. DIFFUSE-X-RAY SCATTERING FROM NONIDEAL PERIODICAL CRYSTALLINE MULTILAYERS. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 58(3):173-180, Březen 1994. BibTeX

@article{ ISI:A1994NB21800009,
	author = "HOLY, V",
	title = "{DIFFUSE-X-RAY SCATTERING FROM NONIDEAL PERIODICAL CRYSTALLINE MULTILAYERS}",
	journal = "{APPLIED PHYSICS A-MATERIALS SCIENCE \& PROCESSING}",
	year = "{1994}",
	volume = "{58}",
	number = "{3}",
	pages = "{173-180}",
	month = "{MAR}",
	abstract = "{Kinematical theory of X-ray diffraction in statistically disturbed crystals is used for the description of X-ray diffraction in multilayers containing random structural defects. The method makes it possible to calculate the distribution of diffusely scattered intensity near a non-zero reciprocal lattice point as well as rocking curves measured by double crystal diffractometry. The general approach is applied to multilayers with mosaic structure as well as to multilayers with randomly rough interfaces and diffuse X-ray scattering intensities are calculated for various values of defect parameters. The possibility is shown to distinguish the influence of the interface roughness on the diffuse X-ray scattering from that of mosaic structure. The influence of non-random strain profiles on the diffuse scattering intensity distribution is discussed.}",
	doi = "{10.1007/BF00324373}",
	issn = "{0947-8396}",
	times-cited = "{9}",
	unique-id = "{ISI:A1994NB21800009}"
}

E KOPPENSTEINER, P HAMBERGER, G BAUER, V HOLY and E KASPER. ANALYSIS OF STRAIN AND MOSAICITY IN A SHORT-PERIOD SI9GE6 SUPERLATTICE BY X-RAY-DIFFRACTION. APPLIED PHYSICS LETTERS 64(2):172-174, 1994. BibTeX

@article{ ISI:A1994MQ50200015,
	author = "KOPPENSTEINER, E and HAMBERGER, P and BAUER, G and HOLY, V and KASPER, E",
	title = "{ANALYSIS OF STRAIN AND MOSAICITY IN A SHORT-PERIOD SI9GE6 SUPERLATTICE BY X-RAY-DIFFRACTION}",
	journal = "{APPLIED PHYSICS LETTERS}",
	year = "{1994}",
	volume = "{64}",
	number = "{2}",
	pages = "{172-174}",
	month = "{JAN 10}",
	abstract = "{Triple axis x-ray diffractometry was employed for the structural characterization of a 100 period Si9Ge6 superlattice grown by molecular beam epitaxy on a thick step-graded SiGe alloy buffer. From the distribution of diffusely scattered intensity around reciprocal lattice points the correlation function of the deformation field due to structural defects has been calculated using kinematical theory of x-ray diffraction. From the extension of the correlation function it turns out that on the average the entire superlattice (0.2 mu m thick) scatters coherently along growth direction, whereas laterally the coherently scattering regions are extended only over about 40 nm.}",
	doi = "{10.1063/1.111555}",
	issn = "{0003-6951}",
	times-cited = "{24}",
	unique-id = "{ISI:A1994MQ50200015}"
}

W PLOTZ, V HOLY, WVD HOOGENHOF, W AHRER, N FRANK, C SCHILLER and K LISCHKA. CHARACTERIZATION OF SEMICONDUCTOR SURFACES AND INTERFACES BY X-RAY REFLECTIVITY MEASUREMENTS. In H Heinrich and W Jantsch (eds.). PROCEEDINGS OF THE 17TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-3: ICDS-17 143-(Part 1-3). 1994, 561-565. 17th International Conference on Defects in Semiconductors, GMUNDEN, AUSTRIA, JUL 18-23, 1993. BibTeX

@inproceedings{ ISI:A1994BA13Z00091,
	author = "PLOTZ, W and HOLY, V and HOOGENHOF, WVD and AHRER, W and FRANK, N and SCHILLER, C and LISCHKA, K",
	editor = "{Heinrich, H and Jantsch, W}",
	title = "{CHARACTERIZATION OF SEMICONDUCTOR SURFACES AND INTERFACES BY X-RAY REFLECTIVITY MEASUREMENTS}",
	booktitle = "{PROCEEDINGS OF THE 17TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-3: ICDS-17}",
	series = "{MATERIALS SCIENCE FORUM}",
	year = "{1994}",
	volume = "{143-}",
	number = "{Part 1-3}",
	pages = "{561-565}",
	note = "{17th International Conference on Defects in Semiconductors, GMUNDEN, AUSTRIA, JUL 18-23, 1993}",
	organization = "{AUSTRIAN PHYS SOC; BUNDESMINIST WISSENSCH \& FORSCH; CITY GMUNDEN; CITY LINZ; COHERENT GMBH; COMETT; GESELL MIKROELEKTR; GOVT UPPER AUSTRIA; HANDELSKAMMER OBEROSTERREICH; IBM; INT SCI FDN, NEW YORK; OBEROSTERREICH KRAFTWERKE A G; OSTERREICH FORSCHUNGSGEMENINSCH; OSTERREICH NATIONALBANK; SIEMEN AG; USN, OFF NAVAL RES}",
	issn = "{0255-5476}",
	isbn = "{0-87849-671-8}",
	times-cited = "{2}",
	unique-id = "{ISI:A1994BA13Z00091}"
}

E KOPPENSTEINER, P HAMBERGER, G BAUER, V HOLY, H KIBBEL, H PRESTING and E KASPER. X-RAY TRIPLE-CRYSTAL DIFFRACTOMETRY OF STRUCTURAL DEFECTS IN SIMGEN SUPERLATTICES. In H Heinrich and W Jantsch (eds.). PROCEEDINGS OF THE 17TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-3: ICDS-17 143-(Part 1-3). 1994, 1325-1329. 17th International Conference on Defects in Semiconductors, GMUNDEN, AUSTRIA, JUL 18-23, 1993. BibTeX

@inproceedings{ ISI:A1994BA13Z00218,
	author = "KOPPENSTEINER, E and HAMBERGER, P and BAUER, G and HOLY, V and KIBBEL, H and PRESTING, H and KASPER, E",
	editor = "{Heinrich, H and Jantsch, W}",
	title = "{X-RAY TRIPLE-CRYSTAL DIFFRACTOMETRY OF STRUCTURAL DEFECTS IN SIMGEN SUPERLATTICES}",
	booktitle = "{PROCEEDINGS OF THE 17TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-3: ICDS-17}",
	series = "{MATERIALS SCIENCE FORUM}",
	year = "{1994}",
	volume = "{143-}",
	number = "{Part 1-3}",
	pages = "{1325-1329}",
	note = "{17th International Conference on Defects in Semiconductors, GMUNDEN, AUSTRIA, JUL 18-23, 1993}",
	organization = "{AUSTRIAN PHYS SOC; BUNDESMINIST WISSENSCH \& FORSCH; CITY GMUNDEN; CITY LINZ; COHERENT GMBH; COMETT; GESELL MIKROELEKTR; GOVT UPPER AUSTRIA; HANDELSKAMMER OBEROSTERREICH; IBM; INT SCI FDN, NEW YORK; OBEROSTERREICH KRAFTWERKE A G; OSTERREICH FORSCHUNGSGEMENINSCH; OSTERREICH NATIONALBANK; SIEMEN AG; USN, OFF NAVAL RES}",
	issn = "{0255-5476}",
	isbn = "{0-87849-671-8}",
	times-cited = "{0}",
	unique-id = "{ISI:A1994BA13Z00218}"
}

V HOLY, L TAPFER, E KOPPENSTEINER, G BAUER, H LAGE, O BRANDT and K PLOOG. TRIPLE-CRYSTAL X-RAY-DIFFRACTOMETRY OF PERIODIC ARRAYS OF SEMICONDUCTOR QUANTUM WIRES. APPLIED PHYSICS LETTERS 63(23):3140-3142, 1993. BibTeX

@article{ ISI:A1993ML09600012,
	author = "HOLY, V and TAPFER, L and KOPPENSTEINER, E and BAUER, G and LAGE, H and BRANDT, O and PLOOG, K",
	title = "{TRIPLE-CRYSTAL X-RAY-DIFFRACTOMETRY OF PERIODIC ARRAYS OF SEMICONDUCTOR QUANTUM WIRES}",
	journal = "{APPLIED PHYSICS LETTERS}",
	year = "{1993}",
	volume = "{63}",
	number = "{23}",
	pages = "{3140-3142}",
	month = "{DEC 6}",
	abstract = "{Kinematical diffraction theory and the optical coherence formalism have been used for calculating the diffuse x-ray scattering from periodic quantum wires. The method calculates the distribution of the diffusely scattered intensity in the reciprocal lattice plane. The simulated distributions have been compared with those measured on a InAs/GaAs quantum wire by means of triple crystal x-ray diffractometry and a good agreement has been achieved. The method can be applied to studies of internal stress relaxation in quantum wires.}",
	issn = "{0003-6951}",
	times-cited = "{27}",
	unique-id = "{ISI:A1993ML09600012}"
}

M LIBEZNY, J POORTMANS, M CAYMAX, A VANAMMEL, J KUBENA, V HOLY and J VANHELLEMONT. SPECTROSCOPIC ELLIPSOMETRY OF STRAINED SI1-XGEX LAYERS. THIN SOLID FILMS 233(1-2):158-161, 1993. 1ST INTERNATIONAL CONF ON SPECTROSCOPIC ELLIPSOMETRY, MINIST RECH & ESPACE, PARIS, FRANCE, JAN 11-14, 1993. BibTeX

@article{ ISI:A1993MB36200031,
	author = "LIBEZNY, M and POORTMANS, J and CAYMAX, M and VANAMMEL, A and KUBENA, J and HOLY, V and VANHELLEMONT, J",
	title = "{SPECTROSCOPIC ELLIPSOMETRY OF STRAINED SI1-XGEX LAYERS}",
	journal = "{THIN SOLID FILMS}",
	year = "{1993}",
	volume = "{233}",
	number = "{1-2}",
	pages = "{158-161}",
	month = "{OCT 12}",
	note = "{1ST INTERNATIONAL CONF ON SPECTROSCOPIC ELLIPSOMETRY, MINIST RECH \& ESPACE, PARIS, FRANCE, JAN 11-14, 1993}",
	organization = "{MINIST EDUC NATL \& CULTURE FRANCE; MINIST RECH \& ESPACE; CNRS; UNIV PIERRE \& MARIE CURIE; DIRECT RECH ETUDES \& TECH; INSTRUMENTS S A, DIV JOBIN YVON}",
	abstract = "{Spectroscopic ellipsometry was used for the determination of optical parameters and thicknesses of Si-capped Si1-xGex layers with x = 0. 10, 0. 16 and 0.20, grown by ultrahigh vacuum chemical vapour deposition. The parameters of the E1 critical point were determined together with the thicknesses of the surface natural oxide, the Si cap and the Si1-xGex layers. The results were correlated with cross-section transmission electron microscopy, X-ray diffraction and reflectance measurements and compared with available data from literature.}",
	doi = "{10.1016/0040-6090(93)90080-9}",
	issn = "{0040-6090}",
	researcherid-numbers = "{Vanhellemont, Jan/F-1635-2011}",
	times-cited = "{2}",
	unique-id = "{ISI:A1993MB36200031}"
}

V HOLY, J KUBENA, E ABRAMOF, K LISCHKA, A PESEK and E KOPPENSTEINER. X-RAY DOUBLE AND TRIPLE-CRYSTAL DIFFRACTOMETRY OF MOSAIC STRUCTURE IN HETEROEPITAXIAL LAYERS. JOURNAL OF APPLIED PHYSICS 74(3):1736-1743, 1993. BibTeX

@article{ ISI:A1993LQ12700041,
	author = "HOLY, V and KUBENA, J and ABRAMOF, E and LISCHKA, K and PESEK, A and KOPPENSTEINER, E",
	title = "{X-RAY DOUBLE AND TRIPLE-CRYSTAL DIFFRACTOMETRY OF MOSAIC STRUCTURE IN HETEROEPITAXIAL LAYERS}",
	journal = "{JOURNAL OF APPLIED PHYSICS}",
	year = "{1993}",
	volume = "{74}",
	number = "{3}",
	pages = "{1736-1743}",
	month = "{AUG 1}",
	abstract = "{X-ray diffraction in thin layers containing small randomly placed defects is described by means of the kinematical diffraction theory and optical coherence formalism. The method enables us to calculate both the diffracted intensity and its angular distribution, so that it can be used for simulating double crystal and triple crystal x-ray diffractometry experiments. The theory has been applied to experimental data obtained from diffractometry measurements of an epitaxial ZnTe layer with mosaic structure after several steps of chemical thinning. A good agreement of the theory with experiments has been achieved.}",
	issn = "{0021-8979}",
	times-cited = "{62}",
	unique-id = "{ISI:A1993LQ12700041}"
}

V HOLY, J KUBENA, I OHLIDAL, K LISCHKA and W PLOTZ. X-RAY REFLECTION FROM ROUGH LAYERED SYSTEMS. PHYSICAL REVIEW B 47(23):15896-15903, 1993. BibTeX

@article{ ISI:A1993LJ15400063,
	author = "HOLY, V and KUBENA, J and OHLIDAL, I and LISCHKA, K and PLOTZ, W",
	title = "{X-RAY REFLECTION FROM ROUGH LAYERED SYSTEMS}",
	journal = "{PHYSICAL REVIEW B}",
	year = "{1993}",
	volume = "{47}",
	number = "{23}",
	pages = "{15896-15903}",
	month = "{JUN 15}",
	abstract = "{The specular and nonspecular x-ray reflectivity of a rough multilayer is calculated on the basis of the distorted-wave Born approximation. The theory explains the existence of maxima in the angular distribution of a nonspecularly reflected wave. The interface roughness has been characterized by root-mean-square roughness, lateral correlation length, and the fractal dimension of the interface. It has been demonstrated that these parameters can be obtained from nonspecular reflectivity measurements. Calculations based on this theory compare well with data measured on rough layered samples.}",
	doi = "{10.1103/PhysRevB.47.15896}",
	issn = "{0163-1829}",
	times-cited = "{222}",
	unique-id = "{ISI:A1993LJ15400063}"
}

V HOLY, J KUBENA, E ABRAMOF, A PESEK and E KOPPENSTEINER. X-RAY-DIFFRACTOMETRY OF SMALL DEFECTS IN LAYERED SYSTEMS. JOURNAL OF PHYSICS D-APPLIED PHYSICS 26(4A):A146-A150, 1993. BibTeX

@article{ ISI:A1993KY84600032,
	author = "HOLY, V and KUBENA, J and ABRAMOF, E and PESEK, A and KOPPENSTEINER, E",
	title = "{X-RAY-DIFFRACTOMETRY OF SMALL DEFECTS IN LAYERED SYSTEMS}",
	journal = "{JOURNAL OF PHYSICS D-APPLIED PHYSICS}",
	year = "{1993}",
	volume = "{26}",
	number = "{4A}",
	pages = "{A146-A150}",
	month = "{APR 14}",
	abstract = "{X-ray diffraction in thin layers and layered systems is described using the optical coherence approach and the semi-kinematical diffraction theory. Two defect models in thin layers are considered-the mosaic structure model and the model of interface roughness. For both defect models the reflection curves of a thin layer and a superlattice have been calculated and compared with double-crystal x-ray diffractometry results on superlattices and epitaxial layers. The distribution of the diffusely scattered intensity near a reciprocal lattice point has been calculated theoretically for both models and it has been proved experimentally by double- and triple-crystal diffractometry of epitaxial layers with mosaic structure. It has been demonstrated that the theory yields a tool for estimating the predominant defect type in a layered structure.}",
	doi = "{10.1088/0022-3727/26/4A/031}",
	issn = "{0022-3727}",
	times-cited = "{12}",
	unique-id = "{ISI:A1993KY84600032}"
}

M LIBEZNY, I DEWOLF, J POORTMANS, A VANAMMEL, M CAYMAX, V HOLY, F VIZDA, J KUBENA, K WERNER and M ISHIDA. X-RAY-DIFFRACTION AND REFLECTANCE, RAMAN-SCATTERING AND PHOTOLUMINESCENCE CHARACTERIZATION OF THERMALLY ANNEALED EPITAXIAL SI1-XGEX LAYERS. In MA Tischler, RT Collins, MLW Thewalt and G Abstreiter (eds.). SILICON-BASED OPTOELECTRONIC MATERIALS 298. 1993, 51-56. SYMP ON SILICON-BASED OPTOELECTRONIC MATERIALS, AT THE 1993 SPRING MEETING OF THE MATERIALS-RESEARCH-SOC, SAN FRANCISCO, CA, APR 12-14, 1993. BibTeX

@inproceedings{ ISI:A1993BZ22V00007,
	author = "LIBEZNY, M and DEWOLF, I and POORTMANS, J and VANAMMEL, A and CAYMAX, M and HOLY, V and VIZDA, F and KUBENA, J and WERNER, K and ISHIDA, M",
	editor = "{Tischler, MA and Collins, RT and Thewalt, MLW and Abstreiter, G}",
	title = "{X-RAY-DIFFRACTION AND REFLECTANCE, RAMAN-SCATTERING AND PHOTOLUMINESCENCE CHARACTERIZATION OF THERMALLY ANNEALED EPITAXIAL SI1-XGEX LAYERS}",
	booktitle = "{SILICON-BASED OPTOELECTRONIC MATERIALS}",
	series = "{MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS}",
	year = "{1993}",
	volume = "{298}",
	pages = "{51-56}",
	note = "{SYMP ON SILICON-BASED OPTOELECTRONIC MATERIALS, AT THE 1993 SPRING MEETING OF THE MATERIALS-RESEARCH-SOC, SAN FRANCISCO, CA, APR 12-14, 1993}",
	organization = "{MAT RES SOC; USA, ARMY RES OFF; USN, OFF NAVAL RES; USAF, OFF SCI RES}",
	doi = "{10.1557/PROC-298-51}",
	issn = "{0272-9172}",
	isbn = "{1-55899-194-8}",
	times-cited = "{0}",
	unique-id = "{ISI:A1993BZ22V00007}"
}

V HOLY and J KUBENA. X-RAY DOUBLE AND TRIPLE CRYSTAL DIFFRACTOMETRY OF SILICON-CRYSTALS WITH SMALL DEFECTS. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 170(1):9-25, Březen 1992. BibTeX

@article{ ISI:A1992HQ98800001,
	author = "HOLY, V and KUBENA, J",
	title = "{X-RAY DOUBLE AND TRIPLE CRYSTAL DIFFRACTOMETRY OF SILICON-CRYSTALS WITH SMALL DEFECTS}",
	journal = "{PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS}",
	year = "{1992}",
	volume = "{170}",
	number = "{1}",
	pages = "{9-25}",
	month = "{MAR}",
	abstract = "{Intensities of X-ray diffuse scattering are calculated on the basis of the kinematical approximation of the statistical dynamical diffraction theory for crystals with randomly distributed small defects. Various approaches are derived for defect parameter determination (the density, size, and strength of defects) and some of them are compared with previously published X-ray methods. The theoretical results obtained for two various defect models are proved by double and triple crystal diffractometry measurements.}",
	doi = "{10.1002/pssb.2221700102}",
	issn = "{0370-1972}",
	times-cited = "{24}",
	unique-id = "{ISI:A1992HQ98800001}"
}

V HOLY, J KUBENA, I OHLIDAL and K PLOOG. THE DIFFUSE-X-RAY SCATTERING IN REAL PERIODICAL SUPERLATTICES. SUPERLATTICES AND MICROSTRUCTURES 12(1):25-35, 1992. BibTeX

@article{ ISI:A1992JX12400004,
	author = "HOLY, V and KUBENA, J and OHLIDAL, I and PLOOG, K",
	title = "{THE DIFFUSE-X-RAY SCATTERING IN REAL PERIODICAL SUPERLATTICES}",
	journal = "{SUPERLATTICES AND MICROSTRUCTURES}",
	year = "{1992}",
	volume = "{12}",
	number = "{1}",
	pages = "{25-35}",
	doi = "{10.1016/0749-6036(92)90215-Q}",
	issn = "{0749-6036}",
	times-cited = "{12}",
	unique-id = "{ISI:A1992JX12400004}"
}

V HOLY, J KUBENA and Z BOCHNICEK. X-RAY STUDY OF DEFECT DEPTH DISTRIBUTION IN SILICON-WAFERS AFTER HEAT-TREATMENT. JOURNAL OF APPLIED PHYSICS 70(7):3537-3541, 1991. BibTeX

@article{ ISI:A1991GJ67500021,
	author = "HOLY, V and KUBENA, J and BOCHNICEK, Z",
	title = "{X-RAY STUDY OF DEFECT DEPTH DISTRIBUTION IN SILICON-WAFERS AFTER HEAT-TREATMENT}",
	journal = "{JOURNAL OF APPLIED PHYSICS}",
	year = "{1991}",
	volume = "{70}",
	number = "{7}",
	pages = "{3537-3541}",
	month = "{OCT 1}",
	abstract = "{A surface defect-free denuded zone in silicon wafers has been studied by x-ray double-crystal diffractometry. On the basis of the dynamical theory of x-ray diffraction on crystals with microdefects, it has been demonstrated that the x-ray reflection curve of a crystal with a denuded zone measured in the Bragg geometry (reflection case) depends strongly on the denuded zone thickness, while that in the Laue geometry (transmission case) is practically not affected by the zone. Thus, it is possible to determine the denuded zone thickness nondestructively from the ratio of the tails of the reflection curves measured in both geometries. The thickness values obtained experimentally by this approach have been compared with those from chemical etch patterns of cleavage wafer cross sections, and a good agreement has been achieved.}",
	issn = "{0021-8979}",
	times-cited = "{2}",
	unique-id = "{ISI:A1991GJ67500021}"
}

V HOLY, J KUBENA and K PLOOG. X-RAY-ANALYSIS OF STRUCTURAL DEFECTS IN A SEMICONDUCTOR SUPERLATTICE. PHYSICA STATUS SOLIDI B-BASIC RESEARCH 162(2):347-361, Prosinec 1990. BibTeX

@article{ ISI:A1990FK80900003,
	author = "HOLY, V and KUBENA, J and PLOOG, K",
	title = "{X-RAY-ANALYSIS OF STRUCTURAL DEFECTS IN A SEMICONDUCTOR SUPERLATTICE}",
	journal = "{PHYSICA STATUS SOLIDI B-BASIC RESEARCH}",
	year = "{1990}",
	volume = "{162}",
	number = "{2}",
	pages = "{347-361}",
	month = "{DEC}",
	abstract = "{The structural defects in a (GaAs)m/(AlAs)n superlattice are studied experimentally and theoretically as well. Three models for the defects are proposed, which follow from the SL growth kinetics. Direct expressions for the reflectivities are derived from the semikinematical approximation of X-ray diffraction, assuming that the statistical parameters characterizing the defect models are distributed normally. On the basis of a numerical fit of the theoretical and experimental double crystal X-ray rocking curves the mean lattice parameter and the mean chemical composition as well as their statistical dispersions are found for a {[}(GaAs)m/(AlA)n]120 superlattice. The X-ray diffraction curves enable one to find the most probable model for the actual structural defects in the real superlattice.}",
	doi = "{10.1002/pssb.2221620204}",
	issn = "{0370-1972}",
	times-cited = "{41}",
	unique-id = "{ISI:A1990FK80900003}"
}

V HOLY and J KUBENA. CHARACTERIZATION OF MICRODEFECTS IN SILICON BY MEANS OF X-RAY REFLECTION CURVES. PHYSICA STATUS SOLIDI B-BASIC RESEARCH 155(2):339-347, Říjen 1989. BibTeX

@article{ ISI:A1989AY43300001,
	author = "HOLY, V and KUBENA, J",
	title = "{CHARACTERIZATION OF MICRODEFECTS IN SILICON BY MEANS OF X-RAY REFLECTION CURVES}",
	journal = "{PHYSICA STATUS SOLIDI B-BASIC RESEARCH}",
	year = "{1989}",
	volume = "{155}",
	number = "{2}",
	pages = "{339-347}",
	month = "{OCT}",
	doi = "{10.1002/pssb.2221550202}",
	issn = "{0370-1972}",
	times-cited = "{8}",
	unique-id = "{ISI:A1989AY43300001}"
}

V HOLY and J KUBENA. ON THE INTEGRATED INTENSITY OF X-RAY-DIFFRACTION IN CRYSTALS WITH RANDOMLY DISTRIBUTED DEFECTS. PHYSICA STATUS SOLIDI B-BASIC RESEARCH 151(1):23-28, Leden 1989. BibTeX

@article{ ISI:A1989T397000002,
	author = "HOLY, V and KUBENA, J",
	title = "{ON THE INTEGRATED INTENSITY OF X-RAY-DIFFRACTION IN CRYSTALS WITH RANDOMLY DISTRIBUTED DEFECTS}",
	journal = "{PHYSICA STATUS SOLIDI B-BASIC RESEARCH}",
	year = "{1989}",
	volume = "{151}",
	number = "{1}",
	pages = "{23-28}",
	month = "{JAN}",
	doi = "{10.1002/pssb.2221510103}",
	issn = "{0370-1972}",
	times-cited = "{11}",
	unique-id = "{ISI:A1989T397000002}"
}

V HOLY, S CUMMINGS and M HART. HIGH-ENERGY DOUBLE-CRYSTAL X-RAY-DIFFRACTION. JOURNAL OF APPLIED CRYSTALLOGRAPHY 21(Part 5):516-520, 1988. BibTeX

@article{ ISI:A1988Q730600020,
	author = "HOLY, V and CUMMINGS, S and HART, M",
	title = "{HIGH-ENERGY DOUBLE-CRYSTAL X-RAY-DIFFRACTION}",
	journal = "{JOURNAL OF APPLIED CRYSTALLOGRAPHY}",
	year = "{1988}",
	volume = "{21}",
	number = "{Part 5}",
	pages = "{516-520}",
	month = "{OCT 1}",
	doi = "{10.1107/S0021889888006120}",
	issn = "{0021-8898}",
	times-cited = "{5}",
	unique-id = "{ISI:A1988Q730600020}"
}

J KUBENA and V HOLY. PRECISE RELATIVE X-RAY-MEASUREMENT OF THE LATTICE-PARAMETER OF SILICON-CRYSTALS WITH GROWTH STRIATIONS. JOURNAL OF APPLIED CRYSTALLOGRAPHY 21(Part 3):245-251, 1988. BibTeX

@article{ ISI:A1988N659800006,
	author = "KUBENA, J and HOLY, V",
	title = "{PRECISE RELATIVE X-RAY-MEASUREMENT OF THE LATTICE-PARAMETER OF SILICON-CRYSTALS WITH GROWTH STRIATIONS}",
	journal = "{JOURNAL OF APPLIED CRYSTALLOGRAPHY}",
	year = "{1988}",
	volume = "{21}",
	number = "{Part 3}",
	pages = "{245-251}",
	month = "{JUN 1}",
	doi = "{10.1107/S0021889888000779}",
	issn = "{0021-8898}",
	times-cited = "{2}",
	unique-id = "{ISI:A1988N659800006}"
}

I OHLIDAL, K NAVRATIL and V HOLY. IMMERSION SPECTROSCOPIC REFLECTOMETRY OF MULTILAYER SYSTEMS .2. EXPERIMENTAL RESULTS. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION 5(4):465-470, Duben 1988. BibTeX

@article{ ISI:A1988M767300002,
	author = "OHLIDAL, I and NAVRATIL, K and HOLY, V",
	title = "{IMMERSION SPECTROSCOPIC REFLECTOMETRY OF MULTILAYER SYSTEMS .2. EXPERIMENTAL RESULTS}",
	journal = "{JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION}",
	year = "{1988}",
	volume = "{5}",
	number = "{4}",
	pages = "{465-470}",
	month = "{APR}",
	doi = "{10.1364/JOSAA.5.000465}",
	issn = "{0740-3232}",
	times-cited = "{1}",
	unique-id = "{ISI:A1988M767300002}"
}

V HOLY and J HARTWIG. THE ROLE OF DIFFUSE-SCATTERING ON MICRODEFECTS IN THE PRECISE LATTICE-PARAMETER MEASUREMENT. PHYSICA STATUS SOLIDI B-BASIC RESEARCH 145(2):363-372, Únor 1988. BibTeX

@article{ ISI:A1988M647400001,
	author = "HOLY, V and HARTWIG, J",
	title = "{THE ROLE OF DIFFUSE-SCATTERING ON MICRODEFECTS IN THE PRECISE LATTICE-PARAMETER MEASUREMENT}",
	journal = "{PHYSICA STATUS SOLIDI B-BASIC RESEARCH}",
	year = "{1988}",
	volume = "{145}",
	number = "{2}",
	pages = "{363-372}",
	month = "{FEB}",
	doi = "{10.1002/pssb.2221450202}",
	issn = "{0370-1972}",
	times-cited = "{11}",
	unique-id = "{ISI:A1988M647400001}"
}

J HARTWIG, V HOLY, R KITTNER, J KUBENA and V LERCHE. INVESTIGATION OF QUARTZ CRYSTALS WITH NON-HOMOGENEOUS DISTRIBUTIONS OF IMPURITY ATOMS BY X-RAY-METHODS. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 105(1):61-74, 1988. BibTeX

@article{ ISI:A1988M568600004,
	author = "HARTWIG, J and HOLY, V and KITTNER, R and KUBENA, J and LERCHE, V",
	title = "{INVESTIGATION OF QUARTZ CRYSTALS WITH NON-HOMOGENEOUS DISTRIBUTIONS OF IMPURITY ATOMS BY X-RAY-METHODS}",
	journal = "{PHYSICA STATUS SOLIDI A-APPLIED RESEARCH}",
	year = "{1988}",
	volume = "{105}",
	number = "{1}",
	pages = "{61-74}",
	month = "{JAN 16}",
	doi = "{10.1002/pssa.2211050105}",
	issn = "{0031-8965}",
	times-cited = "{8}",
	unique-id = "{ISI:A1988M568600004}"
}

V HOLY and J KUBENA. X-RAY REFLECTION CURVES OF SI CRYSTALS WITH MICRODEFECTS IN THE LAUE CASE. PHYSICA STATUS SOLIDI B-BASIC RESEARCH 141(1):35-45, Květen 1987. BibTeX

@article{ ISI:A1987H946800002,
	author = "HOLY, V and KUBENA, J",
	title = "{X-RAY REFLECTION CURVES OF SI CRYSTALS WITH MICRODEFECTS IN THE LAUE CASE}",
	journal = "{PHYSICA STATUS SOLIDI B-BASIC RESEARCH}",
	year = "{1987}",
	volume = "{141}",
	number = "{1}",
	pages = "{35-45}",
	month = "{MAY}",
	doi = "{10.1002/pssb.2221410103}",
	issn = "{0370-1972}",
	times-cited = "{10}",
	unique-id = "{ISI:A1987H946800002}"
}

V HOLY and KT GABRIELYAN. DYSON AND BETHE-SALPETER EQUATIONS FOR DYNAMIC X-RAY-DIFFRACTION IN CRYSTALS WITH RANDOMLY PLACED DEFECTS. PHYSICA STATUS SOLIDI B-BASIC RESEARCH 140(1):39-50, Březen 1987. BibTeX

@article{ ISI:A1987H101800002,
	author = "HOLY, V and GABRIELYAN, KT",
	title = "{DYSON AND BETHE-SALPETER EQUATIONS FOR DYNAMIC X-RAY-DIFFRACTION IN CRYSTALS WITH RANDOMLY PLACED DEFECTS}",
	journal = "{PHYSICA STATUS SOLIDI B-BASIC RESEARCH}",
	year = "{1987}",
	volume = "{140}",
	number = "{1}",
	pages = "{39-50}",
	month = "{MAR}",
	doi = "{10.1002/pssb.2221400103}",
	issn = "{0370-1972}",
	times-cited = "{42}",
	unique-id = "{ISI:A1987H101800002}"
}

KT GABRIELYAN, J KUBENA and V HOLY. A STUDY OF THE NATURE OF DISLOCATION LOOPS IN GROWTH STRIATIONS IN SILICON BY X-RAY DOUBLE CRYSTAL TOPOGRAPHY. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 95(2):579-588, Červen 1986. BibTeX

@article{ ISI:A1986D732600026,
	author = "GABRIELYAN, KT and KUBENA, J and HOLY, V",
	title = "{A STUDY OF THE NATURE OF DISLOCATION LOOPS IN GROWTH STRIATIONS IN SILICON BY X-RAY DOUBLE CRYSTAL TOPOGRAPHY}",
	journal = "{PHYSICA STATUS SOLIDI A-APPLIED RESEARCH}",
	year = "{1986}",
	volume = "{95}",
	number = "{2}",
	pages = "{579-588}",
	month = "{JUN}",
	doi = "{10.1002/pssa.2210950227}",
	issn = "{0031-8965}",
	times-cited = "{1}",
	unique-id = "{ISI:A1986D732600026}"
}

J HARTWIG and V HOLY. THE ABSOLUTE LATTICE-PARAMETER OF CRYSTALS WITH DEFECTS MEASURED WITH X-RAY-METHODS. PHYSICA STATUS SOLIDI B-BASIC RESEARCH 135(1):37-47, Květen 1986. BibTeX

@article{ ISI:A1986D182800002,
	author = "HARTWIG, J and HOLY, V",
	title = "{THE ABSOLUTE LATTICE-PARAMETER OF CRYSTALS WITH DEFECTS MEASURED WITH X-RAY-METHODS}",
	journal = "{PHYSICA STATUS SOLIDI B-BASIC RESEARCH}",
	year = "{1986}",
	volume = "{135}",
	number = "{1}",
	pages = "{37-47}",
	month = "{MAY}",
	issn = "{0370-1972}",
	times-cited = "{8}",
	unique-id = "{ISI:A1986D182800002}"
}

J KUBENA and V HOLY. A STUDY OF THE CONTRAST ON GROWTH STRIATIONS IN SILICON BY X-RAY DOUBLE CRYSTAL TOPOGRAPHY IN THE LAUE CASE. CZECHOSLOVAK JOURNAL OF PHYSICS 35(9):1007-1016, 1985. BibTeX

@article{ ISI:A1985AVB6800008,
	author = "KUBENA, J and HOLY, V",
	title = "{A STUDY OF THE CONTRAST ON GROWTH STRIATIONS IN SILICON BY X-RAY DOUBLE CRYSTAL TOPOGRAPHY IN THE LAUE CASE}",
	journal = "{CZECHOSLOVAK JOURNAL OF PHYSICS}",
	year = "{1985}",
	volume = "{35}",
	number = "{9}",
	pages = "{1007-1016}",
	doi = "{10.1007/BF01676362}",
	issn = "{0011-4626}",
	times-cited = "{4}",
	unique-id = "{ISI:A1985AVB6800008}"
}

V HOLY, J HLAVKA and J KUBENA. ON THE CORRELATION OF X-RAY GENERATED PHOTOCONDUCTIVITY WITH THE X-RAY REFLECTION CURVE IN SILICON. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 90(1):K87-K89, 1985. BibTeX

@article{ ISI:A1985APX4500061,
	author = "HOLY, V and HLAVKA, J and KUBENA, J",
	title = "{ON THE CORRELATION OF X-RAY GENERATED PHOTOCONDUCTIVITY WITH THE X-RAY REFLECTION CURVE IN SILICON}",
	journal = "{PHYSICA STATUS SOLIDI A-APPLIED RESEARCH}",
	year = "{1985}",
	volume = "{90}",
	number = "{1}",
	pages = "{K87-K89}",
	doi = "{10.1002/pssa.2210900162}",
	issn = "{0031-8965}",
	times-cited = "{4}",
	unique-id = "{ISI:A1985APX4500061}"
}

V HOLY. DYNAMICAL X-RAY-DIFFRACTION FROM CRYSTALS WITH PRECIPITATES .1. THEORY OF THE BRAGG CASE. ACTA CRYSTALLOGRAPHICA SECTION A 40(NOV):675-679, 1984. BibTeX

@article{ ISI:A1984TU03100012,
	author = "HOLY, V",
	title = "{DYNAMICAL X-RAY-DIFFRACTION FROM CRYSTALS WITH PRECIPITATES .1. THEORY OF THE BRAGG CASE}",
	journal = "{ACTA CRYSTALLOGRAPHICA SECTION A}",
	year = "{1984}",
	volume = "{40}",
	number = "{NOV}",
	pages = "{675-679}",
	doi = "{10.1107/S0108767384001380}",
	issn = "{0108-7673}",
	times-cited = "{26}",
	unique-id = "{ISI:A1984TU03100012}"
}

J KUBENA and V HOLY. THE STUDY OF GROWTH STRIATIONS IN SILICON BY MEANS OF X-RAY REFLECTION-DOUBLE-CRYSTAL TOPOGRAPHY. CZECHOSLOVAK JOURNAL OF PHYSICS 34(9):950-&, 1984. BibTeX

@article{ ISI:A1984TM44500006,
	author = "KUBENA, J and HOLY, V",
	title = "{THE STUDY OF GROWTH STRIATIONS IN SILICON BY MEANS OF X-RAY REFLECTION-DOUBLE-CRYSTAL TOPOGRAPHY}",
	journal = "{CZECHOSLOVAK JOURNAL OF PHYSICS}",
	year = "{1984}",
	volume = "{34}",
	number = "{9}",
	pages = "{950-\&}",
	doi = "{10.1007/BF01589824}",
	issn = "{0011-4626}",
	times-cited = "{7}",
	unique-id = "{ISI:A1984TM44500006}"
}

V HOLY. X-RAY REFLECTION CURVES OF CRYSTALS WITH RANDOMLY DISTRIBUTED MICRODEFECTS IN THE BRAGG CASE. ACTA CRYSTALLOGRAPHICA SECTION A 39(SEP):642-646, 1983. BibTeX

@article{ ISI:A1983RL62700006,
	author = "HOLY, V",
	title = "{X-RAY REFLECTION CURVES OF CRYSTALS WITH RANDOMLY DISTRIBUTED MICRODEFECTS IN THE BRAGG CASE}",
	journal = "{ACTA CRYSTALLOGRAPHICA SECTION A}",
	year = "{1983}",
	volume = "{39}",
	number = "{SEP}",
	pages = "{642-646}",
	doi = "{10.1107/S0108767383001312}",
	issn = "{0108-7673}",
	times-cited = "{14}",
	unique-id = "{ISI:A1983RL62700006}"
}

J KUBENA and V HOLY. INVESTIGATION OF THE GROWTH STRIATIONS IN SILICON BY X-RAY TOPOGRAPHY. CZECHOSLOVAK JOURNAL OF PHYSICS 33(12):1315-&, 1983. BibTeX

@article{ ISI:A1983SB07900003,
	author = "KUBENA, J and HOLY, V",
	title = "{INVESTIGATION OF THE GROWTH STRIATIONS IN SILICON BY X-RAY TOPOGRAPHY}",
	journal = "{CZECHOSLOVAK JOURNAL OF PHYSICS}",
	year = "{1983}",
	volume = "{33}",
	number = "{12}",
	pages = "{1315-\&}",
	doi = "{10.1007/BF01590221}",
	issn = "{0011-4626}",
	times-cited = "{15}",
	unique-id = "{ISI:A1983SB07900003}"
}

V HOLY and J KUBENA. X-RAY ROCKING CURVES ON INHOMOGENEOUS SURFACE-LAYERS ON SI SINGLE-CRYSTALS .2. IMPLANTED LAYERS. CZECHOSLOVAK JOURNAL OF PHYSICS 32(7):750-766, 1982. BibTeX

@article{ ISI:A1982PF26200005,
	author = "HOLY, V and KUBENA, J",
	title = "{X-RAY ROCKING CURVES ON INHOMOGENEOUS SURFACE-LAYERS ON SI SINGLE-CRYSTALS .2. IMPLANTED LAYERS}",
	journal = "{CZECHOSLOVAK JOURNAL OF PHYSICS}",
	year = "{1982}",
	volume = "{32}",
	number = "{7}",
	pages = "{750-766}",
	doi = "{10.1007/BF01596828}",
	issn = "{0011-4626}",
	times-cited = "{15}",
	unique-id = "{ISI:A1982PF26200005}"
}

V HOLY. THE COHERENCE DESCRIPTION OF THE DYNAMICAL X-RAY-DIFFRACTION FROM RANDOMLY DISORDERED CRYSTALS .2. SOME NUMERICAL RESULTS. PHYSICA STATUS SOLIDI B-BASIC RESEARCH 112(1):161-169, 1982. BibTeX

@article{ ISI:A1982PA86800017,
	author = "HOLY, V",
	title = "{THE COHERENCE DESCRIPTION OF THE DYNAMICAL X-RAY-DIFFRACTION FROM RANDOMLY DISORDERED CRYSTALS .2. SOME NUMERICAL RESULTS}",
	journal = "{PHYSICA STATUS SOLIDI B-BASIC RESEARCH}",
	year = "{1982}",
	volume = "{112}",
	number = "{1}",
	pages = "{161-169}",
	doi = "{10.1002/pssb.2221120118}",
	issn = "{0370-1972}",
	times-cited = "{16}",
	unique-id = "{ISI:A1982PA86800017}"
}

V HOLY. THE COHERENCE DESCRIPTION OF THE DYNAMICAL X-RAY-DIFFRACTION FROM RANDOMLY DISORDERED CRYSTALS .1. GENERAL FORMALISM. PHYSICA STATUS SOLIDI B-BASIC RESEARCH 111(1):341-351, 1982. BibTeX

@article{ ISI:A1982NU42000037,
	author = "HOLY, V",
	title = "{THE COHERENCE DESCRIPTION OF THE DYNAMICAL X-RAY-DIFFRACTION FROM RANDOMLY DISORDERED CRYSTALS .1. GENERAL FORMALISM}",
	journal = "{PHYSICA STATUS SOLIDI B-BASIC RESEARCH}",
	year = "{1982}",
	volume = "{111}",
	number = "{1}",
	pages = "{341-351}",
	doi = "{10.1002/pssb.2221110139}",
	issn = "{0370-1972}",
	times-cited = "{31}",
	unique-id = "{ISI:A1982NU42000037}"
}

V HOLY. COHERENCE PROPERTIES OF DYNAMICALLY DIFFRACTED X-RAYS. PHYSICA STATUS SOLIDI B-BASIC RESEARCH 101(2):575-583, 1980. BibTeX

@article{ ISI:A1980KR21300015,
	author = "HOLY, V",
	title = "{COHERENCE PROPERTIES OF DYNAMICALLY DIFFRACTED X-RAYS}",
	journal = "{PHYSICA STATUS SOLIDI B-BASIC RESEARCH}",
	year = "{1980}",
	volume = "{101}",
	number = "{2}",
	pages = "{575-583}",
	doi = "{10.1002/pssb.2221010216}",
	issn = "{0370-1972}",
	times-cited = "{11}",
	unique-id = "{ISI:A1980KR21300015}"
}

V HOLY and J KUBENA. X-RAY ROCKING CURVES ON INHOMOGENEOUS SURFACE-LAYERS ON SI SINGLE-CRYSTALS .1. DIFFUSION LAYERS. CZECHOSLOVAK JOURNAL OF PHYSICS 29(10):1161-1172, 1979. BibTeX

@article{ ISI:A1979HT20700010,
	author = "HOLY, V and KUBENA, J",
	title = "{X-RAY ROCKING CURVES ON INHOMOGENEOUS SURFACE-LAYERS ON SI SINGLE-CRYSTALS .1. DIFFUSION LAYERS}",
	journal = "{CZECHOSLOVAK JOURNAL OF PHYSICS}",
	year = "{1979}",
	volume = "{29}",
	number = "{10}",
	pages = "{1161-1172}",
	doi = "{10.1007/BF01596114}",
	issn = "{0011-4626}",
	times-cited = "{10}",
	unique-id = "{ISI:A1979HT20700010}"
}

O LITZMAN and V HOLY. SOME SPECIAL MODELS OF THE SPATIAL THEORY OF DISPERSION. PHYSICA STATUS SOLIDI B-BASIC RESEARCH 93(1):135-146, 1979. BibTeX

@article{ ISI:A1979HC07700014,
	author = "LITZMAN, O and HOLY, V",
	title = "{SOME SPECIAL MODELS OF THE SPATIAL THEORY OF DISPERSION}",
	journal = "{PHYSICA STATUS SOLIDI B-BASIC RESEARCH}",
	year = "{1979}",
	volume = "{93}",
	number = "{1}",
	pages = "{135-146}",
	doi = "{10.1002/pssb.2220930115}",
	issn = "{0370-1972}",
	times-cited = "{7}",
	unique-id = "{ISI:A1979HC07700014}"
}

Z JANACEK, J KUBENA and V HOLY. INTEGRATED-INTENSITIES OF DIFFRACTION ON THE BENT CRYSTAL. ACTA CRYSTALLOGRAPHICA SECTION A 34(S):S227, 1978. BibTeX

@article{ ISI:A1978GJ17700648,
	author = "JANACEK, Z and KUBENA, J and HOLY, V",
	title = "{INTEGRATED-INTENSITIES OF DIFFRACTION ON THE BENT CRYSTAL}",
	journal = "{ACTA CRYSTALLOGRAPHICA SECTION A}",
	year = "{1978}",
	volume = "{34}",
	number = "{S}",
	pages = "{S227}",
	issn = "{0108-7673}",
	times-cited = "{0}",
	unique-id = "{ISI:A1978GJ17700648}"
}

Z JANACEK, J KUBENA and V HOLY. X-RAY LAUE DIFFRACTION FROM A BENT CRYSTAL - INTEGRATED INTENSITY. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 50(1):285-291, 1978. BibTeX

@article{ ISI:A1978GA85000033,
	author = "JANACEK, Z and KUBENA, J and HOLY, V",
	title = "{X-RAY LAUE DIFFRACTION FROM A BENT CRYSTAL - INTEGRATED INTENSITY}",
	journal = "{PHYSICA STATUS SOLIDI A-APPLIED RESEARCH}",
	year = "{1978}",
	volume = "{50}",
	number = "{1}",
	pages = "{285-291}",
	doi = "{10.1002/pssa.2210500134}",
	issn = "{0031-8965}",
	times-cited = "{6}",
	unique-id = "{ISI:A1978GA85000033}"
}

O LITZMAN and V HOLY. EWALDS DYNAMICAL THEORY OF DIFFRACTION FOR A DEFECT CRYSTAL. CZECHOSLOVAK JOURNAL OF PHYSICS 27(7):724-737, 1977. BibTeX

@article{ ISI:A1977DQ24600002,
	author = "LITZMAN, O and HOLY, V",
	title = "{EWALDS DYNAMICAL THEORY OF DIFFRACTION FOR A DEFECT CRYSTAL}",
	journal = "{CZECHOSLOVAK JOURNAL OF PHYSICS}",
	year = "{1977}",
	volume = "{27}",
	number = "{7}",
	pages = "{724-737}",
	doi = "{10.1007/BF01589314}",
	issn = "{0011-4626}",
	times-cited = "{1}",
	unique-id = "{ISI:A1977DQ24600002}"
}

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