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Doc. RNDr. Stanislav Daniš, Ph.D.

 
  • Room: 
                 F 062, ground floor, Ke Karlovu 5
  • Phone:
                +420 951 55 1398
  • Fax:
                +420 22491 1061
  • E-mail: 
                 This e-mail address is being protected from spambots. You need JavaScript enabled to view it
 

Bibliography:

 

He is the author or co-author of 95 original scientific publications with 454 citations (without self citations), author of one monography, h-index 11.

Research focus and qualifications:

  • X-ray powder diffraction (high and low temperature),
  • high resolution X-ray diffraction, study of thin coatings,
  • multilayers and nanostructures, phase analysis,
  • structure refinement,
  • X-ray diffuse scattering on epitaxial layers, c
  • rystal lattice defects analysis

Recent activities:

  • X-ray diffraction study of nanocrystalline metal oxides,
  • epitaxial thin layers of rare earth oxides, titanium alloys,
  • modelling of the nanoparticle growth in crystalline and amorphous matrix,
  • nanomaterials structure studies using the pair distribution function

Stays abroad:

  • 2008 - one month stay at Johannes Kepler University Linz, Austria, Institute of Semiconductor and Solid State Physics – simulation of coherent x-ray scattering from single defect
  • 2005 -  three months stay at Johannes Kepler University Linz, Austria, Institute of Semiconductor and Solid State Physics – diffuse x-ray scattering from graded SiGe/Si layers
  • 2004-2011 - assistant professor, Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University Prague
  • since 2012 - associate professor, Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University Prague

8 best scientific publications in 2009 – 2013

  • [1] Endres, J., Daniš, S., Bauer, G., The misfit dislocation density profile in graded SiGe/Si( 001) layers prepared at different temperatures, J. Phys. - Cond.Matter 25, 175802 (2013), (if=2.355)
  • [2] Kucera, M., Nitsch, K., Nikl,M., Hanus, M., Danis, S., Growth and characterization of YAG and LuAG epitaxial films for scintillation applications, Journal of Crystal Growth 312, 1538-1545 (2010),(9 citací, if=1.710)
  • [3] Preclikova, J., Galar, P., Trojanek, F., Danis, S., Nanocrystalline titanium dioxide films: Influence of ambient conditions on surface- and volume-related photoluminescence, Journal of Applied Physics 108, Art.No. 113502 (2010), (7 citací, if = 2.169)
  • [4] Cizek, J. et al, Hydrogen-vacancy complexes in electron-irradiated niobium, Physical Review B79, Art.No.054108 (2009), (6 citací, if = 3.691)
  • [5] Adamska, A.M., Havela L., Surble S., Heathman S., Pospíšil J., Daniš S., Pressure effect on the crystal lattice of unconventional superconductor UCoGe, Journal of Physics-Condensed Matter 22, Art.No.275603 (2010), (5 citací, if = 2.223)
  • [6] Kusova, K., Ondic L., Klimešová E., Hernyková K., Pelant I., Daniš S., Valenta J., Gallart M., Ziegler M., Honerlage B., Gilliot P., Luminescence of free-standing versus matrix-embedded oxide-passivated silicon nanocrystals: The role of matrix-induced strain, Applied Physics Letters 101, Art.No. 143101 (2012), (29 citací, if=3.515)
  • [7] Vlach, M., Stulíková I., Smola B., Císařová I., Piesová J., Daniš S., Gemma R., Málek J., Tanprayoon D., Neubert V., Phase transformations in non-isothermally annealed as-cast and cold-rolled AlMnScZr alloys, International Journal of Materials Research 103, 814-820 (2012), (4 citace, if=0.675)
  • [8] Bittová, B., Vejpravová-Poltierová J., Kalbáč M., Burianová S., Mantlíková A., Daniš S., Doyle S., Magnetic Properties of Iron Catalyst Particles in HiPco Single Wall Carbon Nanotubes, Journal of Physical Chemistry C 115, 17303-17309 (2011), (12 citací, if = 4.835)