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Title: Anastasia Pylypets: Study of phonon energies in Bi4Ge3O12 crystal with Raman spectroscopy
Number: 21/21
Status: Closing date exceeded
Begin: Thursday, 01.04. 2021, 14:00
Tutor: Václav Holý, Milan Dopita
Location: Zoom Meeting ID: 968 4196 6328

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Nano Seminar

 

Thursday, 1. 4. 2021, 14.00,

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https://cesnet.zoom.us/j/96841966328

Meeting ID: 968 4196 6328

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Anastasia Pylypets

Department of Nanostructures and Nanotechnologies, Faculty of Mathematics and Physics, Charles University, Prague

Department of Dielectrics, Institute of physics of the Czech Academy of Science, Prague

 

Study of phonon energies in Bi4Ge3O12 crystal with Raman spectroscopy

Bi4Ge3O12 (BGO) has been widely used in areas such as particle physics, aerospace physics, nuclear medicine, geology exploration, and other fields. BGO crystals doped with Cr, Fe, Mn, Co, V, Ru make it a promising material for holographic data storage and processing of information [1].

There are a lot of publications which include experimental results on doped BGO, in particular studies of these compounds with Raman spectroscopy. At the same time there is no complete experimental study, providing information about all Raman active modes present in BGO. Our goal was to assign phonon mode frequencies in BGO using spectra received with Raman spectroscopy and compare with the spectrum obtained from ab-initio calculations [2].

Raman spectroscopy is based on inelastic scattering of light and it gives a very quick and efficient way of investigating materials. Raman spectrum features a number of peaks which correspond to energies of phonon modes that are active according to Raman selection rules. Theoretical predictions of observed modes can be done by the factor group analysis. According to it, there are 27 Raman active modes for BGO (4A1 + 9E + 14F2).

Using Raman spectroscope RM-1000 RENISHAW and measuring angular dependencies at different polarizations (crossed and parallel), performing low-temperature measurements on Lincam cell, using liquid Nitrogen, helped us to propose the desired complete spectrum of phonon energies in BGO crystal.

 

References:

[1] R. Titorenkova , et al., AIP Conference Proceedings 1203, 289 (2010);  https://doi.org/10.1063/1.3322452

[2] M. Couzi, et al., Solid State Communication, Vol. 20, pp.461-465 (1976)  https://doi.org/10.1016/0038-1098(76)90146-0

 

*corresponding author: e-mail: This e-mail address is being protected from spambots. You need JavaScript enabled to view it

 

 

Bi4Ge3O12 (BGO) has been widely used in areas such as particle physics, aerospace physics, nuclear medicine, geology exploration, and other fields. BGO crystals doped with Cr, Fe, Mn, Co, V, Ru make it a promising material for holographic data storage and processing of information [1].

There are a lot of publications which include experimental results on doped BGO, in particular studies of these compounds with Raman spectroscopy. At the same time there is no complete experimental study, providing information about all Raman active modes present in BGO. Our goal was to assign phonon mode frequencies in BGO using spectra received with Raman spectroscopy and compare with the spectrum obtained from ab-initio calculations [2].

Raman spectroscopy is based on inelastic scattering of light and it gives a very quick and efficient way of investigating materials. Raman spectrum features a number of peaks which correspond to energies of phonon modes that are active according to Raman selection rules. Theoretical predictions of observed modes can be done by the factor group analysis. According to it, there are 27 Raman active modes for BGO (4A1 + 9E + 14F2).

Using Raman spectroscope RM-1000 RENISHAW and measuring angular dependencies at different polarizations (crossed and parallel), performing low-temperature measurements on Lincam cell, using liquid Nitrogen, helped us to propose the desired complete spectrum of phonon energies in BGO crystal.

 

References:

[1] R. Titorenkova , et al., AIP Conference Proceedings 1203, 289 (2010);  https://doi.org/10.1063/1.3322452

[2] M. Couzi, et al., Solid State Communication, Vol. 20, pp.461-465 (1976)  https://doi.org/10.1016/0038-1098(76)90146-0

 

 

*corresponding author: e-mail: This e-mail address is being protected from spambots. You need JavaScript enabled to view it